公开(公告)号：US08021481B2

公开(公告)日：2011-09-20

申请号：US12534857

申请日：2009-08-04

Applicant: Mark P. D'Evelyn

Inventor： Mark P. D'Evelyn

IPC: C30B17/00

CPC classification number: B01J3/008 ,  B01J3/062 ,  B01J2203/0665 ,  B01J2203/068 ,  C30B7/10 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1008

Abstract: A method for large-scale manufacturing of gallium nitride includes a process for reducing and/or minimizing contamination in the crystals, for solvent addition to an autoclave, for improving or optimizing the solvent atmosphere composition, for removal of the solvent from the autoclave, and for recycling of the solvent. The method is scalable up to large volumes and is cost effective.

Abstract translation: 用于大规模制造氮化镓的方法包括用于减少和/或最小化晶体中的污染物的方法，用于溶剂添加到高压釜中，用于改进或优化溶剂气氛组合物，用于从高压釜中除去溶剂;以及 用于回收溶剂。 该方法可扩展到大容量，并且具有成本效益。

公开(公告)号：US06936488B2

公开(公告)日：2005-08-30

申请号：US10440574

申请日：2003-05-19

Applicant: Mark P. D'Evelyn ,  Nicole A. Evers

Inventor： Mark P. D'Evelyn ,  Nicole A. Evers

IPC: H01L33/32 ,  H01S5/02 ,  H01S5/028 ,  H01S5/343 ,  H01L21/00

CPC classification number: H01L33/32 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/3202 ,  H01S5/34333

Abstract: A light emitting device comprised of a light emitting semiconductor active region disposed on a substrate comprised of GaN having a dislocation density less than 105 per cm2 is provided.

Abstract translation: 提供了一种发光器件，其由设置在具有位错密度小于10 5 / cm 2的GaN的衬底上的发光半导体有源区组成。

公开(公告)号：US20170213937A1

公开(公告)日：2017-07-27

申请号：US15426662

申请日：2017-02-07

Applicant: Thomas M. Katona ,  James W. Raring ,  Mark P. D'Evelyn ,  Michael R. Krames ,  Aurelien J.F. David

Inventor： Thomas M. Katona ,  James W. Raring ,  Mark P. D'Evelyn ,  Michael R. Krames ,  Aurelien J.F. David

IPC: H01L33/20 ,  H05B33/08 ,  H01L33/00 ,  H01L33/16 ,  H01L33/32

CPC classification number: H01L33/20 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01L33/405 ,  H05B33/0842

Abstract: A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension.

公开(公告)号：US09404197B2

公开(公告)日：2016-08-02

申请号：US13600191

申请日：2012-08-30

Applicant: Mark P. D'Evelyn ,  Dirk Ehrentraut ,  Wenkan Jiang ,  Bradley C. Downey

Inventor： Mark P. D'Evelyn ,  Dirk Ehrentraut ,  Wenkan Jiang ,  Bradley C. Downey

IPC: C30B29/40 ,  C30B25/02

CPC classification number: C30B33/06 ,  C30B7/105 ,  C30B25/02 ,  C30B25/20 ,  C30B29/406 ,  H01L29/045 ,  H01L29/2003 ,  H01L31/03044 ,  H01L33/32 ,  H01S5/3202 ,  H01S5/32341 ,  H01S2304/00 ,  Y10T428/24355

Abstract: An ultralow defect gallium-containing nitride crystal and methods of making ultralow defect gallium-containing nitride crystals are disclosed. The crystals are useful as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and photoelectrochemical water splitting for hydrogen generators.

Abstract translation: 公开了一种超低缺陷含镓氮化物晶体和制造超低缺陷含镓氮化物晶体的方法。 该晶体可用作发光二极管，激光二极管，晶体管，光电检测器，太阳能电池和用于氢发生器的光电化学水分离的基板。

公开(公告)号：US09175418B2

公开(公告)日：2015-11-03

申请号：US12988772

申请日：2010-10-11

Applicant: Mark P. D'Evelyn ,  James S. Speck

Inventor： Mark P. D'Evelyn ,  James S. Speck

IPC: C30B7/10 ,  C30B25/02 ,  C30B29/40

CPC classification number: C30B7/105 ,  C30B7/005 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/02645 ,  H01L21/02647 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/34 ,  H01L29/36

Abstract: A large area nitride crystal, comprising gallium and nitrogen, with a non-polar or semi-polar large-area face, is disclosed, along with a method of manufacture. The crystal is useful as a substrate for a light emitting diode, a laser diode, a transistor, a photodetector, a solar cell, or for photoelectrochemical water splitting for hydrogen generation.

Abstract translation: 公开了一种包括镓和氮的具有非极性或半极性大面积面的大面积氮化物晶体以及制造方法。 该晶体可用作发光二极管，激光二极管，晶体管，光电检测器，太阳能电池或用于氢发生的光电化学水分解的衬底。

公开(公告)号：US08986447B2

公开(公告)日：2015-03-24

申请号：US13343563

申请日：2012-01-04

Applicant: Mark P. D'Evelyn

Inventor： Mark P. D'Evelyn

IPC: C30B7/10 ,  C30B29/40 ,  B01J3/00 ,  B01J3/04 ,  B01J3/06 ,  B30B11/00

CPC classification number: C30B29/406 ,  B01J3/008 ,  B01J3/042 ,  B01J3/065 ,  B01J2203/0665 ,  B01J2203/067 ,  B01J2203/068 ,  B30B11/005 ,  C30B7/10 ,  C30B29/403 ,  Y02P20/544 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1096

Abstract: A high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a heater, at least one ceramic ring but can be multiple rings, optionally, with one or more scribe marks and/or cracks present. In a specific embodiment, the apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. In a specific embodiment, the apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively.

Abstract translation: 一种用于加工超临界流体的高压装置及相关方法。 在具体实施例中，本装置包括胶囊，加热器，至少一个陶瓷环，但可以是多个环，任选地，存在一个或多个划痕和/或裂纹。 在具体实施例中，该装置可选地具有包含每个陶瓷环的金属套筒。 该设备还具有高强度外壳，具有相关绝缘的端部法兰和电源控制系统。 在具体实施例中，该装置能够分别访问0.2-2GPa和400-1200℃的压力和温度。

公开(公告)号：US08878230B2

公开(公告)日：2014-11-04

申请号：US13041199

申请日：2011-03-04

Applicant: Mark P. D'Evelyn

Inventor： Mark P. D'Evelyn

IPC: H01L29/20 ,  H01L21/322 ,  C30B7/10 ,  C30B29/40 ,  H01L21/02 ,  H01L33/32

CPC classification number: H01L21/3221 ,  C30B7/105 ,  C30B29/406 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02667 ,  H01L33/32

Abstract: A large-area, high-purity, low-cost single crystal semi-insulating gallium nitride that is useful as substrates for fabricating GaN devices for electronic and/or optoelectronic applications is provided. The gallium nitride is formed by doping gallium nitride material during ammonothermal growth with a deep acceptor dopant species, e.g., Mn, Fe, Co, Ni, Cu, etc., to compensate donor species in the gallium nitride, and impart semi-insulating character to the gallium nitride.

Abstract translation: 提供了一种大面积，高纯度，低成本的单晶半绝缘氮化镓，其可用作用于制造用于电子和/或光电应用的GaN器件的基板。 氮化镓通过在氮热处理生长期间掺杂氮化镓材料而形成，其中使用了深受主掺杂物质，例如Mn，Fe，Co，Ni，Cu等，以补偿氮化镓中的供体物质，并赋予半绝缘特性 到氮化镓。

公开(公告)号：US08871024B2

公开(公告)日：2014-10-28

申请号：US13013697

申请日：2011-01-25

Applicant: Mark P. D'Evelyn

Inventor： Mark P. D'Evelyn

IPC: C30B7/08 ,  B01J3/06 ,  B01J3/04 ,  B01J3/00 ,  C30B29/40 ,  C30B7/10

CPC classification number: B01J3/008 ,  B01J3/042 ,  B01J3/065 ,  B01J2203/0665 ,  B01J2203/067 ,  B01J2203/068 ,  C30B7/10 ,  C30B29/403 ,  C30B29/406 ,  Y02P20/544 ,  Y10T117/1004 ,  Y10T117/1024

Abstract: An improved high pressure apparatus and methods for processing supercritical fluids is described. The apparatus includes a capsule, a heater, and at least one ceramic ring contained by a metal sleeve. The apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C.

Abstract translation: 描述了改进的高压装置和用于处理超临界流体的方法。 该装置包括胶囊，加热器和由金属套筒包含的至少一个陶瓷环。 该设备能够获得0.2-2GPa和400-1200℃的压力和温度。

公开(公告)号：US08786053B2

公开(公告)日：2014-07-22

申请号：US13012674

申请日：2011-01-24

Applicant: Mark P. D'Evelyn ,  Arpan Chakraborty ,  William Houck

Inventor： Mark P. D'Evelyn ,  Arpan Chakraborty ,  William Houck

IPC: H01L29/06 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/036

CPC classification number: H01L33/32 ,  H01L21/6835 ,  H01L21/76254 ,  H01L24/29 ,  H01L24/83 ,  H01L29/02 ,  H01L29/0692 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/382 ,  H01L33/50 ,  H01L2221/68327 ,  H01L2221/6835 ,  H01L2221/68381 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/83193 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A gallium and nitrogen containing substrate structure includes a handle substrate member having a first surface and a second surface and a transferred thickness of gallium and nitrogen material. The structure has a gallium and nitrogen containing active region grown overlying the transferred thickness and a recessed region formed within a portion of the handle substrate member. The substrate structure has a conductive material formed within the recessed region configured to transfer thermal energy from at least the transferred thickness of gallium and nitrogen material.

Abstract translation: 含镓和氮的衬底结构包括具有第一表面和第二表面以及转移的镓和氮材料厚度的手柄衬底构件。 该结构具有生长在转移厚度上的含镓和氮的活性区域和形成在手柄衬底构件的一部分内的凹陷区域。 衬底结构具有形成在凹陷区域内的导电材料，其被配置为从至少转移的镓和氮材料的厚度传递热能。

公开(公告)号：US20140065360A1

公开(公告)日：2014-03-06

申请号：US13600191

申请日：2012-08-30

Applicant: Mark P. D'Evelyn ,  Dirk Ehrentaut ,  Wenkan Jiang ,  Bradley C. Downey

Inventor： Mark P. D'Evelyn ,  Dirk Ehrentaut ,  Wenkan Jiang ,  Bradley C. Downey

IPC: C30B29/40

CPC classification number: C30B33/06 ,  C30B7/105 ,  C30B25/02 ,  C30B25/20 ,  C30B29/406 ,  H01L29/045 ,  H01L29/2003 ,  H01L31/03044 ,  H01L33/32 ,  H01S5/3202 ,  H01S5/32341 ,  H01S2304/00 ,  Y10T428/24355

Abstract: An ultralow defect gallium-containing nitride crystal and methods of making ultralow defect gallium-containing nitride crystals are disclosed. The crystals are useful as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and photoelectrochemical water splitting for hydrogen generators.

Abstract translation: 公开了一种超低缺陷含镓氮化物晶体和制造超低缺陷含镓氮化物晶体的方法。 该晶体可用作发光二极管，激光二极管，晶体管，光电检测器，太阳能电池和用于氢发生器的光电化学水分离的基板。