公开(公告)号：US07348200B2

公开(公告)日：2008-03-25

申请号：US11368184

申请日：2006-03-03

申请人： Soo Min Lee ,  Rak Jun Choi ,  Naoi Yoshiki ,  Sakai Shiro ,  Masayoshi Koike

发明人： Soo Min Lee ,  Rak Jun Choi ,  Naoi Yoshiki ,  Sakai Shiro ,  Masayoshi Koike

IPC分类号： H01L21/00

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B25/18 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262

摘要： The invention provides a method of growing a non-polar a-plane gallium nitride. In the method, first, an r-plane substrate is prepared. Then, a low-temperature nitride-based nucleation layer is deposited on the substrate. Finally, the non-polar a-plane gallium nitride is grown on the nucleation layer. In growing the non-polar a-plane gallium nitride, a gallium source is supplied at a flow rate of about 190 to 390 μmol/min and the flow rate of a nitrogen source is set to produce a V/III ratio of about 770 to 2310.

摘要翻译： 本发明提供一种生长非极性a-平面氮化镓的方法。 在该方法中，首先，准备r面基板。 然后，在基板上沉积低温氮化物基成核层。 最后，在成核层上生长非极性a面平面氮化镓。 在生长非极性a面平面氮化镓的过程中，以约190〜390微摩尔/分钟的流量供给镓源，将氮源的流量设定为产生约770〜 2310。

公开(公告)号：US07186579B2

公开(公告)日：2007-03-06

申请号：US10924999

申请日：2004-08-25

申请人： Takashi Hatano ,  Sho Iwayama ,  Masayoshi Koike

发明人： Takashi Hatano ,  Sho Iwayama ,  Masayoshi Koike

IPC分类号： H01L21/00

CPC分类号： B82Y20/00 ,  H01S5/2004 ,  H01S5/209 ,  H01S5/22 ,  H01S5/34333 ,  H01S2301/18

摘要： A semiconductor laser comprises a sapphire substrate, an AlN buffer layer, Si-doped GaN n-layer, Si-doped Al0.1Ga0.9N n-cladding layer, Si-doped GaN n-guide layer, an active layer having multiple quantum well (MQW) structure in which about 35 Å in thickness of GaN barrier layer 62 and about 35 Å in thickness of Ga0.95In0.05N well layer 61 are laminated alternately, Mg-doped GaN p-guide layer, Mg-doped Al0.25Ga0.75N p-layer, Mg-doped Al0.1Ga0.9N p-cladding layer, and Mg-doped GaN p-contact layer are formed successively thereon. A ridged hole injection part B which contacts to a ridged laser cavity part A is formed to have the same width as the width w of an Ni electrode. Because the p-layer has a larger aluminum composition, etching rate becomes smaller and that can prevent from damaging the p-guide layer in this etching process.

摘要翻译： 半导体激光器包括蓝宝石衬底，AlN缓冲层，Si掺杂的GaN n层，Si掺杂的Al 0.1 Ga 0.9 N n包层，Si- 掺杂GaN n引导层，具有多个量子阱（MQW）结构的有源层，其中GaN阻挡层62的厚度约为35，Ga Ga 2 O 3的厚度为约35。 0.05N的N阱层61交替层叠，Mg掺杂的GaN p导向层，掺杂了Mg的Al 0.25 N Ga 0.75 N p层，Mg- 掺杂的Al 0.1 Ga 0.9 N p包覆层和Mg掺杂的GaN p接触层。 与脊状激光腔部A接触的脊状空穴注入部B形成为与Ni电极的宽度w相同的宽度。 因为p层具有较大的铝组成，所以蚀刻速率变小，并且可以防止在该蚀刻工艺中损坏p导向层。

公开(公告)号：US20060267026A1

公开(公告)日：2006-11-30

申请号：US11442961

申请日：2006-05-31

申请人： Min Kim ,  Masayoshi Koike ,  Kyeong Min ,  Myong Cho

发明人： Min Kim ,  Masayoshi Koike ,  Kyeong Min ,  Myong Cho

IPC分类号： H01S5/00 ,  H01L33/00

CPC分类号： H01L25/0756 ,  H01L27/15 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/22 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

摘要： The invention relates to a monolithic white light emitting device using wafer bonding or metal bonding. In the invention, a conductive submount substrate is provided. A first light emitter is bonded onto the conductive submount substrate by a metal layer. In the first light emitter, a p-type nitride semiconductor layer, a first active layer, an n-type nitride semiconductor layer and a conductive substrate are stacked sequentially from bottom to top. In addition, a second light emitter is formed on a partial area of the conductive substrate. In the second light emitter, a p-type AlGaInP-based semiconductor layer, an active layer and an n-type AlGaInP-based semiconductor layer are stacked sequentially from bottom to top. Further, a p-electrode is formed on an underside of the conductive submount substrate and an n-electrode is formed on a top surface of the n-type AlGaInP-based semiconductor layer.

公开(公告)号：US20050241571A1

公开(公告)日：2005-11-03

申请号：US11007206

申请日：2004-12-09

申请人： Min Kim ,  Masayoshi Koike ,  Hun Hahm

发明人： Min Kim ,  Masayoshi Koike ,  Hun Hahm

IPC分类号： C30B29/38 ,  C23C16/34 ,  C30B25/00 ,  C30B25/02 ,  C30B25/18 ,  H01L21/20 ,  H01L21/205 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/34

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406

摘要： A method of growing a nitride single crystal layer, and a method of manufacturing a light emitting device using the method are disclosed. The method of growing a nitride single crystal layer comprises the steps of preparing a silicon substrate having an upper surface of a crystal plane (111), forming a buffer layer having the formula of SixGe1-x, (where 0

摘要翻译： 公开了一种生长氮化物单晶层的方法，以及使用该方法制造发光器件的方法。 生长氮化物单晶层的方法包括以下步骤：制备具有晶面（111）的上表面的硅衬底，形成具有下式的缓冲层：Si＆lt; 1 x x，（其中0

公开(公告)号：US20050218416A1

公开(公告)日：2005-10-06

申请号：US10898204

申请日：2004-07-26

申请人： Dong Cho ,  Masayoshi Koike ,  Yuji Imai ,  Min Kim ,  Bang Oh ,  Hun Hahm

发明人： Dong Cho ,  Masayoshi Koike ,  Yuji Imai ,  Min Kim ,  Bang Oh ,  Hun Hahm

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/42 ,  H01L33/00

CPC分类号： H01L33/0075 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647

摘要： Provided are a nitride semiconductor light-emitting device comprising a polycrystalline or amorphous substrate made of AlN; a plurality of dielectric patterns formed on the AlN substrate and having a stripe or lattice structure; a lateral epitaxially overgrown-nitride semiconductor layer formed on the AlN substrate having the dielectric patterns by Lateral Epitaxial Overgrowth; a first conductive nitride semiconductor layer formed on the nitride semiconductor layer; an active layer formed on the first conductive nitride semiconductor layer; and a second conductive nitride semiconductor layer formed on the active layer; and a process for producing the same.

摘要翻译： 提供一种氮化物半导体发光器件，其包括由AlN制成的多晶或非晶衬底; 形成在所述AlN基板上并具有条纹或格子结构的多个电介质图案; 通过横向外延生长形成在具有电介质图案的AlN衬底上的侧向外延氮化半导体层; 形成在所述氮化物半导体层上的第一导电氮化物半导体层; 形成在所述第一导电氮化物半导体层上的有源层; 以及形成在所述有源层上的第二导电氮化物半导体层; 及其制造方法。

公开(公告)号：US06897138B2

公开(公告)日：2005-05-24

申请号：US10178853

申请日：2002-06-25

申请人： Hiroshi Watanabe ,  Masayoshi Koike

发明人： Hiroshi Watanabe ,  Masayoshi Koike

IPC分类号： C23C16/30 ,  C23C16/448 ,  C30B25/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/28

CPC分类号： C30B25/02 ,  C23C16/303 ,  C23C16/4488 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262

摘要： The method of the invention for producing a Group III nitride compound semiconductor, employing an etchable substrate which is produced from a material other than the Group III nitride compound semiconductor, includes stacking one or more layers of the Group III nitride compound semiconductor on one face of the substrate and etching the other face of the substrate while stacking one or more semiconductor layers or after completion of stacking one or more semiconductor layers, to thereby reduce the thickness of most of the substrate. The apparatus of present invention for producing a semiconductor through vapor phase growth, contains a substrate for vapor-phase-growing the semiconductor; a source-supplying system for supplying a source for vapor phase growth of the semiconductor; and an etchant-supplying system, wherein the source-supplying system and the etchant-supplying system are isolated through placement of the substrate.

摘要翻译： 本发明的用于制造III族氮化物化合物半导体的方法，采用由除III族氮化物半导体之外的材料制成的可蚀刻衬底，包括在一个面上堆叠一层或多层III族氮化物化合物半导体 并且在堆叠一个或多个半导体层之后或者在堆叠一个或多个半导体层之后蚀刻衬底的另一个面，从而减小了大部分衬底的厚度。 用于通过气相生长生产半导体的本发明的装置包含用于使半导体气相生长的衬底; 用于提供半导体气相生长源的源供应系统; 以及蚀刻剂供应系统，其中通过放置基板来隔离源供应系统和蚀刻剂供应系统。

公开(公告)号：US06486068B2

公开(公告)日：2002-11-26

申请号：US09004608

申请日：1998-01-08

申请人： Shiro Yamasaki ,  Seiji Nagai ,  Masayoshi Koike ,  Isamu Akasaki ,  Hiroshi Amano ,  Isao Yamada ,  Jiro Matsuo

发明人： Shiro Yamasaki ,  Seiji Nagai ,  Masayoshi Koike ,  Isamu Akasaki ,  Hiroshi Amano ,  Isao Yamada ,  Jiro Matsuo

IPC分类号： H01L21302

CPC分类号： H01S5/0201 ,  H01S5/0203 ,  H01S5/32341

摘要： A method for manufacturing a laser diode using Group III nitride compound semiconductor comprising a buffer layer 2, an n+ layer 3, a cladding layer 4, an active layer 5, a p-type cladding layer 61, a contact layer 62, an SiO2 layer 9, an electrode 7 which is formed on the window formed in a portion of the SiO2 layer 9, and an electrode 8 which is formed on a portion of the n+ layer 3 by etching a portion of 4 layers from the contact layer 62 down to the cladding layer 4. One pair of opposite facets S of a cavity is formed by RIBE, and then the facets are etched by gas cluster ion beam etching using Ar gas. As a result, the facets S are flatted and the mirror reflection of the facets S is improved.

摘要翻译： 一种使用III族氮化物化合物半导体制造激光二极管的方法，包括缓冲层2，n +层3，包覆层4，有源层5，p型覆层61，接触层62，SiO 2层 如图9所示，形成在形成在SiO 2层9的一部分上的窗口上的电极7和通过从接触层62蚀刻4层的一部分而形成在n +层3的一部分上的电极8， 通过RIBE形成空腔的一对相对面S，然后通过使用Ar气体的气体簇离子束蚀刻蚀刻该刻面。 结果，小面S变平，并且小面S的镜面反射得到改善。

公开(公告)号：US20120217510A1

公开(公告)日：2012-08-30

申请号：US13468486

申请日：2012-05-10

申请人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

发明人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

IPC分类号： H01L33/32 ,  H01L33/40

CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/325 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40

摘要： A method of producing a light-emitting semiconductor device of a group III nitride compound includes forming a high carrier concentration N+-layer satisfying the formula (Alx3Ga1-x3)y3In1-y3N, wherein 0≦x3≦1, 0≦y3≦1 and 0≦x3+y3≦1, forming an emission layer of a group III nitride compound semiconductor satisfying the formula, Alx1Gay1In1-x1-y1N, where 0≦x1≦1, 0≦y1≦1 and 0≦x1+y1≦1 on the high carrier concentration layer N+-layer, and forming a P-layer of a P-type conduction, on the emission layer, the P-layer including aluminum gallium nitride satisfying the formula Alx2Ga1-x2N, wherein 0≦x2≦1.

摘要翻译： 制备III族氮化物化合物的发光半导体器件的方法包括形成满足式（Al x Ga Ga 1-x 3）y 3 In 1-y 3 N的高载流子浓度N +层，其中0＆nlE; x3＆nlE; 1,0

公开(公告)号：US07981714B2

公开(公告)日：2011-07-19

申请号：US12497060

申请日：2009-07-02

申请人： Min Ho Kim ,  Masayoshi Koike ,  Kyeong Ik Min ,  Seong Suk Lee ,  Sung Hwan Jang

发明人： Min Ho Kim ,  Masayoshi Koike ,  Kyeong Ik Min ,  Seong Suk Lee ,  Sung Hwan Jang

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

摘要： Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicone substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical direction; an amorphous matrix layer filling spaces between nanorods so as to protrude some upper portion of the nanorods; and a GaN layer formed on the matrix layer.

摘要翻译： 公开了一种氮化物基半导体器件及其制备方法，其包括在硅树脂基底上形成的高质量GaN层。 根据本发明的氮化物基半导体器件包括沿着垂直方向对准和形成在硅基底上的多个纳米棒; 填充纳米棒之间的空间的非晶基质层，以便突出所述纳米棒的一些上部; 以及形成在基体层上的GaN层。

公开(公告)号：US20090269909A1

公开(公告)日：2009-10-29

申请号：US12497060

申请日：2009-07-02

申请人： Min Ho KIM ,  Masayoshi Koike ,  Kyeong Ik Min ,  Seong Suk Lee ,  Sung Hwan Jang

发明人： Min Ho KIM ,  Masayoshi Koike ,  Kyeong Ik Min ,  Seong Suk Lee ,  Sung Hwan Jang

IPC分类号： H01L21/20

CPC分类号： H01L33/007 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

摘要： Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicone substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical direction; an amorphous matrix layer filling spaces between nanorods so as to protrude some upper portion of the nanorods; and a GaN layer formed on the matrix layer.

摘要翻译： 公开了一种氮化物基半导体器件及其制备方法，其包括在硅树脂基底上形成的高质量GaN层。 根据本发明的氮化物基半导体器件包括沿着垂直方向对准和形成在硅基底上的多个纳米棒; 填充纳米棒之间的空间的非晶基质层，以便突出所述纳米棒的一些上部; 以及形成在基体层上的GaN层。