公开(公告)号：US06268872B1

公开(公告)日：2001-07-31

申请号：US09081147

申请日：1998-05-19

申请人： Koichi Matsuda ,  Hiroyuki Hanaya

发明人： Koichi Matsuda ,  Hiroyuki Hanaya

IPC分类号： G06T1570

CPC分类号： G06N3/006 ,  A63F13/12 ,  A63F13/335 ,  A63F2300/407 ,  A63F2300/65 ,  A63F2300/807 ,  A63F2300/8082 ,  H04L67/38

摘要： An avatar acting in a shared virtual space is changed in a manner nearly resembling that in a real space. A client PC, along with another client PC, is connected to a shared server through the Internet to receive data about the shared virtual space constituted by a VRML file from the shared server and displays the received data on a CRT monitor. A virtual life object (called an avatar), the alter ego of a user, is changed based on a growth parameter that changes according to occurrence of an event. A hard disk holding a growth parameter control table stores growth parameters updated by an event caused by an operation performed on own client apparatus or another client apparatus or an event caused by passing of predetermined time. The update growth parameter is also transferred to another client PC through the shared server.

摘要翻译： 在共享虚拟空间中起作用的化身以类似于真实空间的形式发生变化。 客户端PC与另一个客户端PC通过互联网连接到共享服务器，以从共享服务器接收由VRML文件构成的共享虚拟空间的数据，并将接收到的数据显示在CRT监视器上。 基于根据事件的发生而变化的增长参数来改变虚拟生活对象（称为化身），即用户的改变自我。 保持增长参数控制表的硬盘存储由在自己的客户机装置或其他客户端装置上执行的操作引起的事件更新的增长参数或由预定时间过去引起的事件。 更新增长参数也通过共享服务器传输到另一台客户端PC。

公开(公告)号：US06253167B1

公开(公告)日：2001-06-26

申请号：US09084515

申请日：1998-05-26

申请人： Koichi Matsuda ,  Hiroyuki Hanaya

发明人： Koichi Matsuda ,  Hiroyuki Hanaya

IPC分类号： G06G748

CPC分类号： G06N3/006 ,  A63F2300/407 ,  A63F2300/8058 ,  A63F2300/8082

摘要： A plurality of users can share a virtual life object and breed the same. A growth parameter control table is stored in a hard disk of an AO server. When a predetermined event is inputted from a client PC 1 or PC 2, a growth parameter, in the growth parameter control table, corresponding to the inputted event is updated. According to the updated growth parameter, the client PC 1 or PC 2 changes the state of the virtual life object existing in a shared virtual space.

摘要翻译： 多个用户可以共享虚拟生命对象并进行繁殖。 生长参数控制表存储在AO服务器的硬盘中。 当从客户机PC 1或PC 2输入预定事件时，更新对应于输入事件的生长参数控制表中的增长参数。 根据更新的增长参数，客户端PC 1或PC 2改变存在于共享虚拟空间中的虚拟生活对象的状态。

公开(公告)号：US06068755A

公开(公告)日：2000-05-30

申请号：US986826

申请日：1997-12-08

申请人： Koichi Matsuda ,  Yuichi Sonoda ,  Tetsuro Nakamura

发明人： Koichi Matsuda ,  Yuichi Sonoda ,  Tetsuro Nakamura

IPC分类号： C25D5/20 ,  C25D7/06 ,  C25D9/08 ,  H01L31/052 ,  H01L31/18 ,  C25D9/00

CPC分类号： C25D9/08 ,  C25D5/20 ,  C25D7/0621 ,  H01L31/056 ,  H01L31/1836 ,  H01L31/1884 ,  Y02E10/52

摘要： A zinc oxide film is formed on an electroconductive substrate by electrodeposition. The electrodeposition is performed by immersing an electroconductive substrate and an electrode in an aqueous solution containing nitrate ion and zinc ion, and supplying a current passing through a gap between the electroconductive substrate and the electrode while vibrating the electroconductive substrate to stably form a uniform zinc oxide film free from anomalous growth of a crystal on the electroconductive substrate. The zinc oxide film is excellent in adhesive properties with the electroconductive substrate and suitable for a light-confining layer of a photo-electricity generating device.

摘要翻译： 通过电沉积在导电性基体上形成氧化锌膜。 通过将导电性基材和电极浸渍在含有硝酸根离子和锌离子的水溶液中，通过导电性基板与电极间的间隙供给电流，同时使导电性基板振动而稳定地形成均匀的氧化锌 导电基材上的晶体不会发生异常生长。 氧化锌膜与导电性基材的粘合性优异，适用于光电发生装置的光束限制层。

公开(公告)号：US5976257A

公开(公告)日：1999-11-02

申请号：US220575

申请日：1994-03-31

申请人： Masahiro Kanai ,  Koichi Matsuda

发明人： Masahiro Kanai ,  Koichi Matsuda

IPC分类号： C23C16/50 ,  C23C16/46 ,  C23C16/511 ,  C23C16/54 ,  G21K5/04 ,  H01J37/32 ,  H01L21/205 ,  H01L31/04 ,  H05H1/24 ,  C23C14/00 ,  C23C16/00 ,  H05H1/02 ,  H05H1/30

CPC分类号： C23C16/463 ,  C23C16/46 ,  C23C16/511 ,  C23C16/545 ,  H01J37/32192 ,  H01J37/3277 ,  H05H2001/4622

摘要： A method and apparatus for forming a large area functional deposited film on the surface of a continuously moving web member by means of a microwave plasma CVD process, characterized in that at the exterior face of the circumferential wall comprising a curved continuously moving web member of the microwave plasma CVD film-forming chamber, a member having a function of transporting the web member while pressing it and being provided with a mechanism capable of controlling the temperature of the web member is disposed.

摘要翻译： 一种通过微波等离子体CVD法在连续移动的网状构件的表面上形成大面积功能性沉积膜的方法和装置，其特征在于，在所述周壁的外表面上包括弯曲的连续移动的网构件 微波等离子体CVD膜形成室，具有在压制时输送纤维网部件​​并具有能够控制幅材部件的温度的机构的功能的部件。

公开(公告)号：US5571749A

公开(公告)日：1996-11-05

申请号：US365244

申请日：1994-12-28

申请人： Koichi Matsuda ,  Takaharu Kondo ,  Yusuke Miyamoto

发明人： Koichi Matsuda ,  Takaharu Kondo ,  Yusuke Miyamoto

IPC分类号： G02F1/1343 ,  C23C16/46 ,  C23C16/50 ,  C23C16/54 ,  H01L21/205 ,  H01L21/26 ,  H01L21/31 ,  H01L31/04 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/076 ,  C23C16/46 ,  C23C16/463 ,  C23C16/50 ,  C23C16/545 ,  H01L21/02425 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02452 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/075 ,  H01L31/202 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： A plasma CVD method adapted to a roll-to-roll process or the like wherein the change rate of the temperature of the substrate before and after an i-type semiconductor layer is deposited is made rapid so as to prevent diffusion of impurities occurring due to annealing, by constituting the apparatus structure in such a manner that the deposited film is formed on an elongated substrate by the plasma CVD method while heating the elongated substrate moving in an i-layer forming discharge chamber at a rate of 4.degree. C./second or higher immediately in front of an inlet to the discharge chamber and cooling the same at a rate of 4.degree. C./second or higher immediately at the outlet of the discharge chamber so that a stacked-layer type photovoltaic device having a large area and free from scattering of the characteristics is continuously formed without deterioration of the characteristics occurring due to dopant diffusion.

摘要翻译： 一种适用于卷绕过程等的等离子体CVD方法，其中沉积i型半导体层之前和之后的衬底的温度变化率被快速地制成，以便防止由于 通过以等离子体CVD法在细长基板上形成沉积膜，同时以4℃/秒的速率加热在i层形成放电室中移动的细长基板，从而进行退火 立即在排出室的入口的前面立即升高，并在出口处立即以4℃/秒或更高的速率对其进行冷却，从而形成具有大面积的堆叠层型光电器件 连续地形成没有特征散射，而不会由于掺杂剂扩散而发生特性的恶化。

公开(公告)号：US5401330A

公开(公告)日：1995-03-28

申请号：US275274

申请日：1994-07-15

申请人： Keishi Saito ,  Toshimitsu Kariya ,  Koichi Matsuda ,  Naoto Okada ,  Yutaka Nishio ,  Tomonori Nishimoto ,  Takaharu Kondo

发明人： Keishi Saito ,  Toshimitsu Kariya ,  Koichi Matsuda ,  Naoto Okada ,  Yutaka Nishio ,  Tomonori Nishimoto ,  Takaharu Kondo

IPC分类号： H01L31/04 ,  H01L31/052 ,  H01L31/076 ,  H01L31/18 ,  H01L31/20 ,  H01L31/075

CPC分类号： H01L31/204 ,  H01L31/056 ,  H01L31/076 ,  H01L31/1884 ,  H01L31/202 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

摘要： The present invention aims to provide a photovoltaic element which can maintain high initial characteristics over long term usage even under severe environments, and can be mass-produced with high yield.A photovoltaic element in which a light reflecting layer, a light reflection multiplying layer, an n-type layer, an i-type layer, and a p-type layer composed of a non-single crystal semiconductor material comprising at least silicon, and a transparent electrode are successively formed on a conductive substrate, characterized in that said light reflecting layer comprises silver or copper atoms as the main constituent and further contains at least one of oxygen, nitrogen, and carbon.Also, in another embodiment, this photovoltaic element is characterized in that said light reflecting layer comprises silver as the main constituent, and further contains lead, lead and gold, or lead, gold, and a first transition group metal in an amount of 2 to 100 ppm.

摘要翻译： 本发明的目的在于提供即使在恶劣的环境下长期使用也能够维持高的初始特性的光电元件，能够大批量生产。 一种光电元件，其中包括至少包含硅的非单晶半导体材料构成的光反射层，光反射倍增层，n型层，i型层和p型层，以及 透明电极依次形成在导电性基板上，其特征在于，所述光反射层包含银或铜原子作为主要成分，并且还含有氧，氮和碳中的至少一种。 此外，在另一个实施方案中，该光电元件的特征在于，所述光反射层包含银作为主要成分，并且还含有铅，铅和金，或铅，金和第一过渡族金属，其量为2至 100 ppm。

公开(公告)号：US5279679A

公开(公告)日：1994-01-18

申请号：US838040

申请日：1992-02-21

申请人： Tsutomu Murakami ,  Jinsho Matsuyama ,  Koichi Matsuda ,  Hiroshi Yamamoto ,  Toshihiro Yamashita

发明人： Tsutomu Murakami ,  Jinsho Matsuyama ,  Koichi Matsuda ,  Hiroshi Yamamoto ,  Toshihiro Yamashita

IPC分类号： H01L31/04 ,  H01L31/075 ,  H01L31/20 ,  H01L31/052

CPC分类号： H01L31/076 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

摘要： A multi-layered photovoltaic element obtained by stacking at least three cells for photovoltaic generation. A second cell formed adjacent to a light incident-side cell and adapted to receive light which has passed through the light incident-side cell includes an i-type semiconductor layer having a band gap falling within a range of 1.45 eV to 1.60 eV. The i-type semiconductor layer consists essentially of a silicon-germanium-containing amorphous material.

摘要翻译： 通过堆叠至少三个用于光伏发电的电池获得的多层光电元件。 与光入射侧单元相邻并且适于接收通过光入射侧单元的光的第二单元包括带隙落在1.45eV至1.60eV的范围内的i型半导体层。 i型半导体层基本上由含硅 - 锗的无定形材料组成。

公开(公告)号：US5259891A

公开(公告)日：1993-11-09

申请号：US844749

申请日：1992-03-02

申请人： Jinsho Matsuyama ,  Tsutomu Murakami ,  Koichi Matsuda

发明人： Jinsho Matsuyama ,  Tsutomu Murakami ,  Koichi Matsuda

IPC分类号： H01L31/04 ,  B22F3/15 ,  B30B11/00 ,  H01L27/142 ,  H01L31/0336 ,  H01L31/0392 ,  H01L31/05

CPC分类号： H01L31/0749 ,  H01L31/03921 ,  H01L31/046 ,  H01L31/0465 ,  H01L31/0508 ,  Y02E10/541

摘要： An integrated type solar battery comprises a plurality of solar batteries serially connected. An upper electrode of one of a pair of adjacent solar batteries and a lower electrode of the other solar battery are connected via a lead wire. A groove of the boundary of the adjacent solar batteries is filled with an insulative material to a thickness sufficient to cover edge portions of the adjacent solar batteries. A conductive material is arranged so as to connect an upper portion of the insulative material and the upper electrode of one of the adjacent solar batteries. The lead wire is arranged over the insulative material along the groove portion of the boundary of the adjacent solar batteries so as to be connected to the conductive material. The lead wire is connected to the lower electrode of the other solar battery.

公开(公告)号：US5252142A

公开(公告)日：1993-10-12

申请号：US796394

申请日：1991-11-22

申请人： Jinsho Matsuyama ,  Tsutomu Murakami ,  Koichi Matsuda ,  Hiroshi Yamamoto ,  Toshihiro Yamashita

发明人： Jinsho Matsuyama ,  Tsutomu Murakami ,  Koichi Matsuda ,  Hiroshi Yamamoto ,  Toshihiro Yamashita

IPC分类号： H01L31/04 ,  H01L31/0352 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/065 ,  H01L31/0352 ,  H01L31/075 ,  H01L31/076 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

摘要： A pin junction photovoltaic element having an i-type semiconductor layer formed of a variable band gap semiconductor material, said i-type semiconductor layer being positioned between a p-type semiconductor layer having a band gap wider than that of said i-type semiconductor layer and an n-type semiconductor layer having a band gap wider than that of said i-type semiconductor layer, characterized in that said i-type semiconductor layer contains a first region (a) which is positioned on the side of said p-type semiconductor layer and also has a graded band gap, a second region (b) which is adjacent to said first region (a) and has a graded band gap, and a third region (c) which is positioned on the side of said n-type semiconductor layer and also has a graded band gap; said i-type semiconductor layer having a minimum band gap at the boundary between said first region (a) and said second region (b); the thickness of said first region (a) being less than one-half of the total thickness of said i-type semiconductor layer; and the gradient of the band gap of said third region (c) being greater than that of the band gap of said second region (b).

公开(公告)号：US5236798A

公开(公告)日：1993-08-17

申请号：US587990

申请日：1990-09-25

申请人： Tatsuyuki Aoike ,  Koichi Matsuda ,  Keishi Saitoh ,  Mitsuyuki Niwa ,  Masafumi Sano ,  Hisami Tanaka

发明人： Tatsuyuki Aoike ,  Koichi Matsuda ,  Keishi Saitoh ,  Mitsuyuki Niwa ,  Masafumi Sano ,  Hisami Tanaka

IPC分类号： G03G5/08 ,  C08G77/60 ,  C08K3/16 ,  C08K5/17 ,  G03F7/075 ,  G03G5/147 ,  H01L51/30

CPC分类号： G03F7/0754 ,  C08G77/60 ,  C08K3/16 ,  C08K5/17 ,  H01L51/0094

摘要： An electrophotographic light receiving member comprising a substrate and a light receiving layer having a multi-layered structure disposed on said substrate, said light receiving layer comprising at least a photoconductive layer and a surface layer being stacked in this order from the side of said substrate, said photoconductive layer being formed of a non-single crystal material containing silicon atoms as the matrix and at least one kind of atoms selected from the group consisting of hydrogen atoms and halogen atoms, and said surface layer being formed of a polysilane compound having a weight average molecular weight of 6000 to 200000 and having at least an oxygen-free organic group selected from the group consisting of alkyl group, cycloalkyl group, aryl group and aralkyl group at the terminals.

摘要翻译： 一种电子照相光接收构件，包括基板和设置在所述基板上的具有多层结构的光接收层，所述光接收层至少包含光电导层和从所述基板侧依次堆叠的表面层， 所述光电导层由含有硅原子作为基体的非单晶材料和选自氢原子和卤素原子的至少一种原子形成，所述表面层由具有重量的聚硅烷化合物形成 平均分子量为6000〜200000，并且在末端具有至少一个选自烷基，环烷基，芳基和芳烷基的无氧有机基团。