公开(公告)号：US20160172541A1

公开(公告)日：2016-06-16

申请号：US15016722

申请日：2016-02-05

Applicant: NGK INSULATORS, LTD.

Inventor： Morimichi WATANABE ,  Jun YOSHIKAWA ,  Tsutomu NANATAKI ,  Katsuhiro IMAI ,  Tomohiko SUGIYAMA ,  Takashi YOSHINO ,  Yukihisa TAKEUCHI ,  Kei SATO

IPC: H01L33/32 ,  H01L33/00 ,  C30B29/40 ,  C30B19/12 ,  C30B9/00 ,  C30B25/20 ,  H01L33/16 ,  C30B19/02

CPC classification number: H01L33/18 ,  C30B9/00 ,  C30B9/12 ,  C30B19/02 ,  C30B19/12 ,  C30B25/18 ,  C30B25/20 ,  C30B28/04 ,  C30B29/406 ,  C30B29/605 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32

Abstract: Provided is a self-supporting gallium nitride substrate useful as an alternative material for a gallium nitride single crystal substrate, which is inexpensive and also suitable for having a large area. This substrate is composed of a plate composed of gallium nitride-based single crystal grains, wherein the plate has a single crystal structure in the approximately normal direction. This substrate can be manufactured by a method comprising providing an oriented polycrystalline sintered body; forming a seed crystal layer composed of gallium nitride on the sintered body so that the seed crystal layer has crystal orientation mostly in conformity with the crystal orientation of the sintered body; forming a layer with a thickness of 20 μm or greater composed of gallium nitride-based crystals on the seed crystal layer so that the layer has crystal orientation mostly in conformity with crystal orientation of the seed crystal layer; and removing the sintered body.

公开(公告)号：US20140290863A1

公开(公告)日：2014-10-02

申请号：US14246639

申请日：2014-04-07

Applicant: NGK Insulators, Ltd.

Inventor： Morimichi WATANABE ,  Asumi JINDO ,  Yuji KATSUDA ,  Yosuke SATO ,  Yoshinori ISODA ,  Atsushi WATANABE

IPC: H01L21/683

CPC classification number: H01L21/6831 ,  C04B35/053 ,  C04B35/58 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3865 ,  C04B2235/6586 ,  C04B2235/76 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/9607 ,  H01L21/6833

Abstract: A ceramic member 30 according to the present invention includes a ceramic base 32, which contains a solid solution Mg(Al)O(N) in which Al and N components are dissolved in magnesium oxide as the main phase, and an electrode 34 disposed on a portion of the ceramic base 32 and containing at least one of nitrides, carbides, carbonitrides, and metals as an electrode component. The ceramic base 32 may have an XRD peak of a (111), (200), or (220) plane of Mg(Al)O(N) measured using a CiKα ray at 2θ=36.9 to 39, 42.9 to 44.8, or 62.3 to 65.2 degrees, respectively, between a magnesium oxide cubic crystal peak and an aluminum nitride cubic crystal peak.

Abstract translation: 根据本发明的陶瓷构件30包括陶瓷基底32，其包含其中Al和N成分溶解在作为主相的氧化镁中的固溶体Mg（Al）O（N）和设置在 陶瓷基体32的一部分并且包含氮化物，碳化物，碳氮化物和金属中的至少一种作为电极组分。 陶瓷基底32可以具有使用2θ时的CiKα射线测量的（111），（200）或（220）面的Mg（Al）O（N）的XRD峰; = 36.9〜39,42.9〜44.8， 或分别为氧化镁立方晶体晶体和氮化铝立方晶体晶体之间的62.3〜65.2度。

公开(公告)号：US20250159937A1

公开(公告)日：2025-05-15

申请号：US19019799

申请日：2025-01-14

Applicant: NGK INSULATORS, LTD.

Inventor： Morimichi WATANABE ,  Hiroshi FUKUI

IPC: H10D30/67 ,  H10D62/40

Abstract: Provided is a semiconductor film having a corundum-type crystal structure composed of α-Ga2O3 or an α-Ga2O3 solid solution, and an X-ray rocking curve full width at half maximum of a (104) plane on at least one surface of the semiconductor film is 500 arcsec or less.

公开(公告)号：US20220328310A1

公开(公告)日：2022-10-13

申请号：US17805234

申请日：2022-06-03

Applicant: NGK Insulators, Ltd.

Inventor： Kiyoshi MATSUSHIMA ,  Morimichi WATANABE ,  Jun YOSHIKAWA

IPC: H01L21/02

Abstract: A rare earth-containing SiC substrate includes a rare earth element and Al. A concentration of the rare earth element is from 1×1016 atoms/cm3 to 1×1019 atoms/cm3 inclusive and a concentration of Al is from 1×1016 atoms/cm3 to 1×1021 atoms/cm3 inclusive.

公开(公告)号：US20220278206A1

公开(公告)日：2022-09-01

申请号：US17663229

申请日：2022-05-13

Applicant: NGK Insulators, Ltd.

Inventor： Morimichi WATANABE ,  Kiyoshi MATSUSHIMA ,  Jun YOSHIKAWA

IPC: H01L29/16 ,  H01L29/04

Abstract: A biaxially oriented SiC composite substrate includes a first biaxially oriented SiC layer that contains a threading screw dislocation and a basal plane dislocation, and a second biaxially oriented SiC layer that is formed continuously from the first biaxially oriented SiC layer and that contains 1×1016 atoms/cm3 or more and 1×1019 atoms/cm3 or less of a rare earth element. The defect density of a surface of the second biaxially oriented SiC layer is smaller than the defect density of the first biaxially oriented SiC layer.

公开(公告)号：US20220246427A1

公开(公告)日：2022-08-04

申请号：US17650402

申请日：2022-02-09

Applicant: NGK INSULATORS, LTD.

Inventor： Jun YOSHIKAWA ,  Morimichi WATANABE ,  Hiroshi FUKUI

IPC: H01L21/02 ,  C23C16/04 ,  G01J3/44

Abstract: Provided is an α-Ga2O3 based semiconductor film having a crystal having a corundum-type crystal structure composed of α-Ga2O3 or an α-Ga2O3 solid solution as a main phase. This semiconductor film has a size in which the diameter of the largest circle inscribed in the outer circumference thereof is 5.08 cm (2 inches) or more, and at the center point X and each of four outer circumferential points A, B, C, and D of the largest circle on the surface of the semiconductor film, the full width at half maximum of the peak in the vicinity of 216 cm−1 in Raman spectrum of the semiconductor film, as measured by laser Raman spectroscopy, is 6.0 cm−1 or less.

公开(公告)号：US20220157946A1

公开(公告)日：2022-05-19

申请号：US17588708

申请日：2022-01-31

Applicant: NGK INSULATORS, LTD.

Inventor： Hiroshi FUKUI ,  Morimichi WATANABE ,  Jun YOSHIKAWA

IPC: H01L29/24 ,  H01L29/06

Abstract: Provided is a α-Ga2O3 based semiconductor film which is a semiconductor film in a circular shape having a crystal having a corundum-type crystal structure composed of α-Ga2O3 or an α-Ga2O3 solid solution as a main phase. The maximum value θmax and the minimum value θmin for off-angles at the center point X and four outer circumferential points A, B, C, and D of a surface of the semiconductor film satisfy the relationship of θmax-θmin≤0.30°. The off-angle is defined as an inclination angle θ of a crystal axis oriented in the substantially normal direction of the semiconductor film with respect to the film surface normal of the semiconductor film.

公开(公告)号：US20220028982A1

公开(公告)日：2022-01-27

申请号：US17450705

申请日：2021-10-13

Applicant: NGK INSULATORS, LTD.

Inventor： Morimichi WATANABE ,  Hiroshi FUKUI

IPC: H01L29/24 ,  H01L21/02 ,  C30B29/16 ,  C30B25/18

Abstract: Provided is a semiconductor film having a corundum-type crystal structure composed of α-Ga2O3 or an α-Ga2O3 solid solution and the crystal defect density on at least one surface of the semiconductor film is 1.0×106/cm2 or less.

公开(公告)号：US20170174574A1

公开(公告)日：2017-06-22

申请号：US15447670

申请日：2017-03-02

Applicant: NGK INSULATORS, LTD.

Inventor： Kiyoshi MATSUSHIMA ,  Morimichi WATANABE ,  Kei SATO ,  Tsutomu NANATAKI

IPC: C04B35/115 ,  C01F7/30 ,  C04B35/634 ,  C04B35/632 ,  C30B1/10 ,  C04B35/638 ,  C04B35/645 ,  C30B1/04 ,  C30B29/20 ,  C01F7/02 ,  C04B35/63

CPC classification number: C04B35/115 ,  C01F7/02 ,  C01F7/30 ,  C01F7/441 ,  C01F7/442 ,  C01P2002/72 ,  C01P2004/20 ,  C01P2004/54 ,  C01P2004/61 ,  C01P2006/80 ,  C04B35/6268 ,  C04B35/6303 ,  C04B35/632 ,  C04B35/6342 ,  C04B35/638 ,  C04B35/645 ,  C04B35/6455 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3217 ,  C04B2235/322 ,  C04B2235/3418 ,  C04B2235/425 ,  C04B2235/445 ,  C04B2235/5292 ,  C04B2235/5296 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6025 ,  C04B2235/604 ,  C04B2235/612 ,  C04B2235/656 ,  C04B2235/6567 ,  C04B2235/72 ,  C04B2235/721 ,  C04B2235/725 ,  C04B2235/77 ,  C04B2235/787 ,  C04B2235/9653 ,  C04B2235/9692 ,  C30B1/04 ,  C30B1/10 ,  C30B1/12 ,  C30B28/02 ,  C30B29/20 ,  G02B1/00 ,  H01L33/0079 ,  H01L33/28 ,  H01L33/32

Abstract: An alumina sintered body according to the present invention has a degree of c-plane orientation of 90% or more as determined by Lotgering's method from an X-ray diffraction profile obtained by irradiating a plate surface with X-rays in a range of 2θ=20° to 70°. The alumina sintered body has no pores when a cross-sectional surface formed in a direction perpendicular to the plate surface is polished using an Ar+ ion beam and a mask and is examined under a scanning electron microscope at a magnification of 5,000 times. The alumina sintered body has a total mass fraction of impurity elements other than Mg and C of 100 ppm or less. This alumina sintered body has a high degree of orientation, high density, and high purity and thus has a higher optical translucency than those known in the art.

公开(公告)号：US20170166484A1

公开(公告)日：2017-06-15

申请号：US15446416

申请日：2017-03-01

Applicant: NGK INSULATORS, LTD.

Inventor： Kiyoshi MATSUSHIMA ,  Morimichi WATANABE ,  Kei SATO ,  Tsutomu NANATAKI

IPC: C04B35/115 ,  C04B35/645

CPC classification number: C04B35/115 ,  C01F7/442 ,  C01P2004/22 ,  C01P2004/54 ,  C01P2006/80 ,  C04B35/6262 ,  C04B35/62675 ,  C04B35/645 ,  C04B35/6455 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/322 ,  C04B2235/445 ,  C04B2235/5292 ,  C04B2235/5296 ,  C04B2235/5445 ,  C04B2235/5472 ,  C04B2235/602 ,  C04B2235/6025 ,  C04B2235/604 ,  C04B2235/658 ,  C04B2235/6586 ,  C04B2235/668 ,  C04B2235/72 ,  C04B2235/721 ,  C04B2235/724 ,  C04B2235/725 ,  C04B2235/787 ,  C04B2235/9623 ,  C04B2235/9653

Abstract: A method for producing a transparent alumina sintered body includes (a) the step of preparing an alumina raw material powder containing a plate-like alumina powder having an aspect ratio of 3 or more so that the mass ratio R1 of F to Al in the alumina raw material powder is 5 ppm or more, and forming a compaction raw material containing the alumina raw material powder into a compact, and (b) the step of pressure-sintering the compact at a temperature at which F evaporate to yield a transparent alumina sintered body.