Method of forming electromechanical transducer film, electromechanical transducer film, electromechanical transducer element, and liquid discharge head
    33.
    发明授权
    Method of forming electromechanical transducer film, electromechanical transducer film, electromechanical transducer element, and liquid discharge head 有权
    形成机电换能器膜,机电换能器膜,机电换能器元件和液体排出头的方法

    公开(公告)号:US09085145B2

    公开(公告)日:2015-07-21

    申请号:US14243177

    申请日:2014-04-02

    Abstract: Disclosed is an electromechanical transducer film forming method including a surface modification process; an application process; and processes of drying, thermally decomposing, and crystallizing sol-gel solution applied to a portion of a surface of a first electrode. An electromechanical transducer film is formed on a desired pattern area on the surface of the first electrode by repeating the above processes. In the application process, each of dots of the sol-gel solution applied by the inkjet method drops onto both a first area inside the desired pattern area and a second area outside the desired pattern area. The first area is a hydrophilic area on the surface of the first electrode, and the second area is a hydrophobic area on the surface of the first electrode. The hydrophilic area and the hydrophobic area have been modified by the surface modification process.

    Abstract translation: 公开了一种包括表面改性工艺的机电换能器成膜方法; 申请流程; 以及施加到第一电极表面的一部分上的溶胶 - 凝胶溶液的干燥,热分解和结晶过程。 通过重复上述过程,在第一电极的表面上的期望图案区域上形成机电换能器膜。 在涂布过程中,通过喷墨法施加的溶胶 - 凝胶溶液的每个点落在期望图案区域内的第一区域和期望图案区域外的第二区域上。 第一区域是第一电极表面上的亲水区域,第二区域是第一电极表面上的疏水区域。 亲水区域和疏水区域已经通过表面改性过程进行了修饰。

    Semiconductor device
    36.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US08772836B2

    公开(公告)日:2014-07-08

    申请号:US13042519

    申请日:2011-03-08

    Applicant: Osamu Machida

    Inventor: Osamu Machida

    CPC classification number: H01L29/7787 H01L29/2003 H01L29/7391 H01L29/872

    Abstract: To provide a semiconductor device in which a rectifying element capable of reducing a leak current in reverse bias when a high voltage is applied and reducing a forward voltage drop Vf and a transistor element are integrally formed on a single substrate.A semiconductor device has a transistor element and a rectifying element on a single substrate. The transistor element has an active layer formed on the substrate and three electrodes (source electrode, drain electrode, and gate electrode) disposed on the active layer. The rectifying element has an anode electrode disposed on the active layer, a cathode electrode which is the drain electrode, and a first auxiliary electrode between the anode electrode and cathode electrode.

    Abstract translation: 提供一种半导体器件,其中,当施加高电压时能够减小反向偏压中的漏电流并且减小正向压降Vf和晶体管元件的整流元件整体形成在单个衬底上。 半导体器件在单个衬底上具有晶体管元件和整流元件。 晶体管元件具有形成在基板上的有源层和设置在有源层上的三个电极(源电极,漏电极和栅电极)。 整流元件具有设置在有源层上的阳极电极,作为漏电极的阴极电极和位于阳极电极和阴极电极之间的第一辅助电极。

    Method for producing electromechanical transducer, electromechanical transducer produced by the method, liquid-droplet jetting head, and liquid-droplet jetting apparatus
    37.
    发明授权
    Method for producing electromechanical transducer, electromechanical transducer produced by the method, liquid-droplet jetting head, and liquid-droplet jetting apparatus 有权
    用于制造机电换能器的方法,通过该方法制造的机电换能器,液滴喷射头和液滴喷射装置

    公开(公告)号:US08646180B2

    公开(公告)日:2014-02-11

    申请号:US13265192

    申请日:2010-05-27

    CPC classification number: H01L41/0973 H01L41/318

    Abstract: A method of producing an electromechanical transducer includes a first step of partially modifying a surface of a first electrode; a second step of applying a sol-gel liquid including a metal composite oxide to a predetermined area of the partially-modified surface of the first electrode; a third step of performing drying, thermal decomposition, and crystallization on the applied sol-gel liquid to form an electromechanical transduction film, wherein the drying includes a heat-treatment at 120° C., the decomposition includes thermal decomposition performed at 500° C., and the crystallization includes heat treatment for crystallization at 700° C.; a fourth step of repeating the first, second, and third steps to obtain the electromechanical transduction film with a desired thickness; and a fifth step of forming a second electrode on the electromechanical transduction film.

    Abstract translation: 一种制造机电换能器的方法包括:第一步骤,部分地改变第一电极的表面; 将包含金属复合氧化物的溶胶 - 凝胶液施加到第一电极的部分改性表面的预定区域的第二步骤; 在所施加的溶胶 - 凝胶液上进行干燥,热分解和结晶以形成机电转换膜的第三步骤,其中所述干燥包括在120℃下的热处理,所述分解包括在500℃下进行的热分解 ,结晶包括在700℃下结晶的热处理。 重复第一,第二和第三步骤以获得具有所需厚度的机电转换膜的第四步骤; 以及在机电转换膜上形成第二电极的第五步骤。

    Gate driver
    38.
    发明授权
    Gate driver 有权
    闸门司机

    公开(公告)号:US08558587B2

    公开(公告)日:2013-10-15

    申请号:US13482384

    申请日:2012-05-29

    CPC classification number: H02M3/1588 H02M1/08 Y02B70/1466

    Abstract: A gate driver turns on/off a switching element Q1 by applying a control signal from a controller to a gate of the switching element. The switching element has the gate, a drain, and a source and contains a wide-bandgap semiconductor. The gate driver includes a parallel circuit that includes a first capacitor C1 and a first resistor R1 and is connected between the controller and the gate of the switching element and a short-circuit unit S4 that is connected between the gate and source of the switching element and short-circuits the gate and source of the switching element after a delay from an OFF pulse of the control signal.

    Abstract translation: 栅极驱动器通过将来自控制器的控制信号施加到开关元件的栅极来打开/关闭开关元件Q1。 开关元件具有栅极,漏极和源极,并且包含宽带隙半导体。 栅极驱动器包括并联电路,其包括第一电容器C1和第一电阻器R1,并且连接在控制器和开关元件的栅极之间,并且连接在开关元件的栅极和源极之间的短路单元S4 并且在从控制信号的OFF脉冲延迟之后使开关元件的栅极和源极短路。

    Electromechanical transducer film and method for manufacturing electromechanical transducer film
    40.
    发明授权
    Electromechanical transducer film and method for manufacturing electromechanical transducer film 有权
    机电换能器薄膜及制造机电换能器薄膜的方法

    公开(公告)号:US08425026B2

    公开(公告)日:2013-04-23

    申请号:US13004203

    申请日:2011-01-11

    CPC classification number: B41J2/14233 H01L41/0805 H01L41/0926 H01L41/318

    Abstract: A method for manufacturing an electromechanical transducer film including a lower electrode and plural layers of a sol-gel solution film formed on the lower electrode by an inkjet method, the method including the steps of a) modifying a surface of the lower electrode, b) forming a first sol-gel solution film on the surface of the lower electrode by ejecting droplets of a sol-gel solution to the surface of the lower electrode, and c) forming a second sol-gel solution film on the first sol-gel solution film by ejecting droplets of the sol-gel solution to a surface of the first sol-gel solution film. Adjacent dots formed on the surface of the lower electrode by the droplets ejected in step b) overlap each other. Adjacent dots formed on the surface of the first sol-gel solution film by the droplets ejected in step c) do not overlap each other.

    Abstract translation: 一种制造机电换能器薄膜的方法,所述机电换能器薄膜包括下电极和通过喷墨方法形成在下电极上的多层溶胶 - 凝胶溶液膜,所述方法包括以下步骤:a)修改下电极的表面,b) 通过将溶胶 - 凝胶溶液的液滴喷射到下电极的表面,在下电极的表面上形成第一溶胶 - 凝胶溶液膜,以及c)在第一溶胶 - 凝胶溶液上形成第二溶胶 - 凝胶溶液膜 通过将溶胶 - 凝胶溶液的液滴喷射到第一溶胶 - 凝胶溶液膜的表面上。 在步骤b)中喷射的液滴在下电极的表面上形成的相邻点彼此重叠。 在步骤c)中喷射的液滴在第一溶胶 - 凝胶溶液膜的表面上形成的相邻点彼此不重叠。

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