公开(公告)号：US08110815B2

公开(公告)日：2012-02-07

申请号：US12299702

申请日：2007-06-11

申请人： Frank Sinclair ,  Douglas R. Adams ,  Brent M. Copertino

发明人： Frank Sinclair ,  Douglas R. Adams ,  Brent M. Copertino

IPC分类号： H01J37/08

CPC分类号： C23C14/48 ,  C23C14/228 ,  H01J37/02 ,  H01J37/32412 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/08 ,  H01J2237/31701

摘要： Providing vapor to a vapor-receiving device housed in a high vacuum chamber. An ion beam implanter, as an example, has a removable high voltage ion source within a high vacuum chamber and a vapor delivery system that delivers vapor to the ion source and does not interfere with removal of the ion source for maintenance. For delivering vapor to a vapor-receiving device, such as the high voltage ion source under vacuum, a flow interface device is in the form of a thermally conductive valve block. A delivery extension of the interface device automatically connects and disconnects within the high vacuum chamber with the removable vapor receiving device by respective installation and removal motions. In an ion implanter, the flow interface device or valve block and source of reactive cleaning gas are mounted in a non-interfering way on the electrically insulating bushing that insulates the ion source from the vacuum housing and the ion source may be removed without disturbing the flow interface device. Multiple vaporizers for solid material, provisions for reactive gas cleaning, and provisions for controlling flow are provided in the flow interface device.

摘要翻译： 向容纳在高真空室中的蒸汽接收装置提供蒸汽。 作为示例，离子束注入机在高真空室内具有可移除的高电压离子源，以及将蒸气输送到离子源并且不干扰离子源的去除以进行维护的蒸气输送系统。 为了将蒸汽输送到蒸汽接收装置，例如在真空下的高压离子源，流动接口装置是导热阀块的形式。 接口设备的传送延伸部通过相应的安装和移除动作，利用可移除的蒸气接收装置自动地在高真空室内连接和断开。 在离子注入机中，流动界面装置或阀块和反应性清洁气体源以非干扰的方式安装在电绝缘衬套上，该电绝缘衬套使离子源与真空壳体绝缘，并且离子源可被去除而不会干扰 流接口设备。 在流体接口装置中提供了用于固体材料的多个蒸发器，用于反应性气体清洁的设备和用于控制流量的设备。

公开(公告)号：US20110240847A1

公开(公告)日：2011-10-06

申请号：US12750893

申请日：2010-03-31

申请人： Frank Sinclair

发明人： Frank Sinclair

IPC分类号： H01J49/00

CPC分类号： H01J37/244 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/24507 ,  H01J2237/24585 ,  H01J2237/30472 ,  H01J2237/31703

摘要： An energy contamination detection apparatus includes a membrane and a charge collection plate disposed at a distance from the membrane. The membrane is configured to receive an ion beam and allow a portion of the ion beam having energy levels above a desired energy level to pass therethrough toward the charge collection plate and absorb or reflect portions of the ion beam having energy levels at or below the desired energy level. A voltage source is electrically coupled to the charge collection plate for providing a bias voltage to the charge collection plate. A detection circuit is coupled to the charge collection plate and is configured to detect energy contamination based on an amount of charge collected on the charge collection plate.

摘要翻译： 能量污染检测装置包括设置在与膜隔开一定距离处的膜和电荷收集板。 膜被配置为接收离子束并且允许具有高于期望能级的能量级的一部分离子束通过其中朝向电荷收集板，并吸收或反射具有等于或低于期望值的能级的离子束的部分 能级。 电压源电耦合到电荷收集板，用于向电荷收集板提供偏置电压。 检测电路耦合到电荷收集板，并且被配置为基于在电荷收集板上收集的电荷量来检测能量污染。

公开(公告)号：US20110114849A1

公开(公告)日：2011-05-19

申请号：US12944537

申请日：2010-11-11

申请人： Frank Sinclair ,  Victor M. Benveniste ,  Svetlana Radovanov ,  James S. Buff

发明人： Frank Sinclair ,  Victor M. Benveniste ,  Svetlana Radovanov ,  James S. Buff

IPC分类号： H01J1/50

CPC分类号： H01J37/3171 ,  H01J37/153 ,  H01J2237/1532

摘要： A system for manipulating an ion beam having a principal axis includes an upper member having a first and a second coil generally disposed in different regions of the upper member and configured to conduct, independently of each other, a first and a second current, respectively. A lower member includes a third and a fourth coil that are generally disposed opposite to respective first and second coils and are configured to conduct, independently of each other, a third and a fourth current, respectively. A lens gap is defined between the upper and lower members, and configured to transmit the ion beam, wherein the first through fourth currents produce a 45 degree quadrupole field that exerts a rotational force on the ion beam about its principal axis.

摘要翻译： 用于操纵具有主轴的离子束的系统包括具有通常设置在上部构件的不同区域中的第一和第二线圈的上部构件，并且被配置为分别彼此独立地导通第一和第二电流。 下部构件包括通常与相应的第一和第二线圈相对设置的第三和第四线圈，并且被配置为分别彼此导通第三和第四电流。 在上部和下部构件之间限定透镜间隙，并且构造成透射离子束，其中第一至第四电流产生45度的四极场，其在离子束的主轴上施加旋转力。

公开(公告)号：US20100184243A1

公开(公告)日：2010-07-22

申请号：US12689605

申请日：2010-01-19

申请人： Russell J. LOW ,  Julian G. Blake ,  Frank Sinclair

发明人： Russell J. LOW ,  Julian G. Blake ,  Frank Sinclair

IPC分类号： H01L31/18 ,  C23C14/48 ,  C23C16/44 ,  B05D3/00

CPC分类号： H01L31/18 ,  C23C14/042 ,  C23C14/48

摘要： A method of fabricating a workpiece is disclosed. A material defining apertures is applied to a workpiece. A species is introduced to the workpiece through the apertures and the material is removed. For example, the material may be evaporated, may form a volatile product with a gas, or may dissolve when exposed to a solvent. The species may be introduced using, for example, ion implantation or gaseous diffusion.

摘要翻译： 公开了一种制造工件的方法。 将定义孔的材料施加到工件上。 通过孔将物质引入工件，并且去除材料。 例如，该材料可能被蒸发，可能与气体形成挥发性产物，或者当暴露于溶剂时可能会溶解。 可以使用例如离子注入或气体扩散来引入物种。

公开(公告)号：US20090124066A1

公开(公告)日：2009-05-14

申请号：US12269344

申请日：2008-11-12

申请人： Jonathan G. ENGLAND ,  Frank Sinclair ,  John (Bon-Woong) Koo ,  Rajesh Dorai ,  Ludovic Godet

发明人： Jonathan G. ENGLAND ,  Frank Sinclair ,  John (Bon-Woong) Koo ,  Rajesh Dorai ,  Ludovic Godet

IPC分类号： H01L21/20

CPC分类号： H01L21/02689 ,  C30B1/023 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/268 ,  H01L31/0747 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/546 ,  Y02P70/521

摘要： Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: disposing a substrate having an upper surface and a lower surface on a platen contained in a chamber; generating a plasma containing a plurality of charged particles above the upper surface of the substrate, the plasma having a cross sectional area equal to or greater than a surface area of the upper surface of the substrate; applying a first bias voltage to the substrate to attract the charged particles toward the upper surface of the substrate; introducing the charged particles to a region extending under entire upper surface of the substrate; and initiating, concurrently, a first phase transformation in the region from the amorphous phase to a crystalline phase.

公开(公告)号：US20090095894A1

公开(公告)日：2009-04-16

申请号：US11872576

申请日：2007-10-15

申请人： Bon Woong Koo ,  Frank Sinclair

发明人： Bon Woong Koo ,  Frank Sinclair

IPC分类号： H05H3/02

CPC分类号： H01J37/026 ,  H01J37/3171 ,  H01J2237/0042 ,  H01J2237/04 ,  H01J2237/05

摘要： Techniques for commensurate cusp-field for effective ion beam neutralization are disclosed. In one particular exemplary embodiment, the techniques may be realized as a charged particle injection system comprising a beamguide configured to transport an ion beam through a dipole field. The charged particle injection system may also comprise a first array of magnets and a second array of magnets configured to generate a multi-cusp magnetic field, positioned along at least a portion of an ion beam path, the first array of magnets being on a first side of the ion beam path and the second array of magnets being on a second side of the ion beam path. The charged particle injection system may further comprise a charged particle source having one or more apertures configured to inject charged particles into the ion beam path. The charged particle injection system may furthermore align the one or more apertures with at least one of the first array of magnets and the second array of magnets to align the injected charged particles from the charged particle source with one or more magnetic regions for an effective charged particle diffusion into the ion beam path.

摘要翻译： 公开了用于有效离子束中和的相应尖点的技术。 在一个特定的示例性实施例中，技术可以被实现为带电粒子注入系统，其包括配置成将离子束传送通过偶极子场的波导。 带电粒子注入系统还可以包括第一磁体阵列和配置成产生沿离子束路径的至少一部分定位的多尖点磁场的第二磁体阵列，第一磁体阵列位于第一 离子束路径的一侧和第二磁体阵列位于离子束路径的第二侧上。 带电粒子注入系统还可以包括具有一个或多个孔的带电粒子源，其被配置为将带电粒子注入到离子束路径中。 带电粒子注入系统还可以将一个或多个孔与第一磁体阵列和第二磁体阵列中的至少一个对准，以将来自带电粒子源的注入的带电粒子与一个或多个磁性区域对准，用于有效带电 粒子扩散入离子束路径。

公开(公告)号：US20090078883A1

公开(公告)日：2009-03-26

申请号：US11859219

申请日：2007-09-21

申请人： Alexander S. Perel ,  Wilhelm Platow ,  Craig Chaney ,  Frank Sinclair ,  Tyler Rockwell

发明人： Alexander S. Perel ,  Wilhelm Platow ,  Craig Chaney ,  Frank Sinclair ,  Tyler Rockwell

IPC分类号： G21K1/00

CPC分类号： H01J37/3171 ,  H01J37/244 ,  H01J37/304 ,  H01J2237/2445 ,  H01J2237/24507 ,  H01J2237/24542 ,  H01J2237/2482 ,  H01J2237/30472

摘要： Techniques for providing optical ion beam metrology are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for controlling beam density profile, the apparatus may include one or more camera systems to capture at least one image of an ion beam and a control system coupled to the one or more camera systems to control a beam density profile of the ion beam. The control system may further include a dose profiler to provide information to one or more ion implantation components in at least one of a feedback loop and a feedforward loop to improve dose and angle uniformity.

摘要翻译： 公开了提供光学离子束计量的技术。 在一个特定的示例性实施例中，技术可以被实现为用于控制光束密度分布的装置，该装置可以包括一个或多个相机系统以捕获离子束的至少一个图像和耦合到一个或多个相机的控制系统 用于控制离子束的束密度分布的系统。 控制系统还可以包括剂量分析器，以在反馈环路和前馈环路中的至少一个中向一个或多个离子注入组件提供信息，以改善剂量和角度均匀性。

公开(公告)号：US5760409A

公开(公告)日：1998-06-02

申请号：US785013

申请日：1997-01-17

申请人： Hank Chen ,  Frank Sinclair ,  Michiro Sugitani

发明人： Hank Chen ,  Frank Sinclair ,  Michiro Sugitani

IPC分类号： C23C14/48 ,  H01J37/317 ,  H01L21/265

CPC分类号： H01J37/3171 ,  H01J2237/304 ,  H01J2237/31703

摘要： Electrical charge neutralization effects are known to be factors that affect the dose or concentrations of beam treatment by high current implanters. Raising beam energies to 1 MeV and beyond requires an understanding of the effects of both charge stripping and charge neutralization as well as a numerically efficient model compensating for these effects. Charge stripping generates ions of a higher charge state and may cause the measured electronic current from a Faraday cup to overestimate the true particle current. An analysis is based on the concept of an effective charge state for an ion beam and results in a more general interpretation that covers both the charge stripping effect as well as ion neutralization. Dose control using the techniques requires two adjustable parameters: an apparent cross section of interaction between the beam and particles in the beam path and the ratio of the final steady charge state to the initial charge state.

摘要翻译： 已知电荷中和作用是影响高电流注入机的束处理剂量或浓度的因素。 将光束能量提高到1 MeV及以上需要了解电荷剥离和电荷中和的影响以及补偿这些影响的数字效率模型。 电荷剥离产生较高电荷状态的离子，并可能导致来自法拉第杯的测量电子电流过高估计真实的粒子电流。 分析基于离子束的有效电荷状态的概念，并且导致涵盖电荷剥离效应以及离子中和的更一般的解释。 使用这些技术的剂量控制需要两个可调参数：光束和光束路径中的粒子之间的相互作用的明显横截面以及最终稳定电荷状态与初始充电状态的比值。

公开(公告)号：US5608223A

公开(公告)日：1997-03-04

申请号：US458354

申请日：1995-06-02

申请人： Suguru Hirokawa ,  Frank Sinclair

发明人： Suguru Hirokawa ,  Frank Sinclair

IPC分类号： C23C14/48 ,  H01J37/304 ,  H01J37/317 ,  H01L21/265 ,  H01L21/687 ,  G21K5/10

CPC分类号： H01L21/68728 ,  H01J37/304 ,  H01J37/3171 ,  H01L21/68764 ,  H01L21/68771 ,  H01J2237/202 ,  H01J2237/31703

摘要： An ion implantation device is equipped with a high-speed driving device which causes rotation of a disk that supports semiconductor wafers around its outer periphery. A center position of the disk is the axis of the high-speed rotation. A low-speed driving device causes relative movement of the disk in a radial direction. The ion implantation device calculates the movement speed of the low-speed driving device with reference to different spacings between wafers about the outer periphery and the distance from the center of the disk to the ion implantation position and controls the low speed scan speed so that ions are uniformly implanted into the wafers.

摘要翻译： 离子注入装置配备有高速驱动装置，其使围绕其外周支撑半导体晶片的盘的旋转。 盘的中心位置是高速旋转的轴。 低速驱动装置导致盘在径向上的相对运动。 离子注入装置参考围绕外周的晶片间的不同间隔和从盘的中心到离子注入位置的距离来计算低速驱动装置的移动速度，并且控制低速扫描速度，使得离子 均匀地植入晶片。

公开(公告)号：US08659229B2

公开(公告)日：2014-02-25

申请号：US13108052

申请日：2011-05-16

申请人： Peter Kurunczi ,  Frank Sinclair ,  Costel Biloiu ,  Ludovic Godet ,  Ernest Allen

发明人： Peter Kurunczi ,  Frank Sinclair ,  Costel Biloiu ,  Ludovic Godet ,  Ernest Allen

IPC分类号： H05H1/24

CPC分类号： H01J37/08 ,  H01J37/3171 ,  H01J37/3211 ,  H01J37/32119 ,  H01J37/32669

摘要： A plasma processing apparatus and method are disclosed which create a uniform plasma within an enclosure. In one embodiment, a conductive or ferrite material is used to influence a section of the antenna, where a section is made up of portions of multiple coiled segments. In another embodiment, a ferrite material is used to influence a portion of the antenna. In another embodiment, plasma uniformity is improved by modifying the internal shape and volume of the enclosure.

摘要翻译： 公开了一种等离子体处理装置和方法，其在外壳内产生均匀的等离子体。 在一个实施例中，导电或铁氧体材料用于影响天线的一部分，其中一部分由多个线圈段的部分组成。 在另一个实施例中，铁氧体材料用于影响天线的一部分。 在另一个实施例中，通过改变外壳的内部形状和体积来提高等离子体的均匀性。