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    ENHANCING CRITICAL CURRENT DENSITY OF CUPRATE SUPERCONDUCTORS
    31.
    发明申请
    ENHANCING CRITICAL CURRENT DENSITY OF CUPRATE SUPERCONDUCTORS 有权
    增强临界电流密度

    公开(公告)号：US20120142536A1

    公开(公告)日：2012-06-07

    申请号：US13155508

    申请日：2011-06-08

    申请人： Praveen Chaudhari ,  Karin Chaudhari ,  Ashok Chaudhari ,  Pia Chaudhari

    发明人： Praveen Chaudhari ,  Karin Chaudhari ,  Ashok Chaudhari ,  Pia Chaudhari

    IPC分类号： H01L39/12

    CPC分类号： H01L39/2483

    摘要： The present invention concerns the enhancement of critical current densities in cuprate superconductors. Such enhancement of critical current densities include using wave function symmetry and restricting movement of Abrikosov (A) vortices, Josephson (J) vortices, or Abrikosov-Josephson (A-J) vortices by using the half integer vortices associated with d-wave symmetry present in the grain boundary.

    摘要翻译： 本发明涉及增加铜酸盐超导体中的临界电流密度。 临界电流密度的这种增强包括使用波函数对称性并且通过使用与存在于...中的d波对称相关联的半整数涡旋来限制Abrikosov（A）涡流，约瑟夫森（J）涡流或阿布里科索夫约瑟夫森（AJ）涡旋的运动 晶界。

    Method of inhibiting hillock formation in films and film thereby and multilayer structure therewith
    38.
    发明授权
    Method of inhibiting hillock formation in films and film thereby and multilayer structure therewith 失效
    从而抑制膜和膜中的小丘形成的方法和其多层结构

    公开(公告)号：US4012756A

    公开(公告)日：1977-03-15

    申请号：US544462

    申请日：1975-01-27

    申请人： Praveen Chaudhari ,  Francois M. D'Heurle ,  Amitava Gangulee

    发明人： Praveen Chaudhari ,  Francois M. D'Heurle ,  Amitava Gangulee

    IPC分类号： H01B1/00 ,  H01F10/06 ,  H01F10/10 ,  H01L21/00 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/532 ,  H01L39/24 ,  H01L27/12

    CPC分类号： H01L39/2493 ,  H01B1/00 ,  H01F10/06 ,  H01F10/10 ,  H01L21/00 ,  H01L21/32051 ,  H01L21/76886 ,  H01L23/53209 ,  H01L23/53219 ,  H01L39/24 ,  H01L2924/0002 ,  H01L2924/3011 ,  Y10S505/874

    摘要： In accordance with the disclosure, certain impurities, e.g., alloying additions, are introduced in thin metal film to negate the driving force or the effect of the driving force which causes the hillock formation. Such thin metallic films are usually fabricated on the substrates which have different thermal coefficients of expansion than the film itself, and during thermal cycling stresses can be introduced into the film. This stress may serve as a driving force for atom movement and, therefore, to the formation of hillocks. The vehicle by which the induced stress in a film effects the requisite atom movement is via defect movement, and when the force is compressive this gives rise to hillocks. In the practice of this disclosure, impurity additions introduced into a film affect hillock growth by their interaction with the defects which give rise to the requisite atom movement. Systematically selected impurity additions are introduced into a film during fabrication thereof which inhibit the defect movement in the class consisting of a migration of point defects, linear defects and planar defects wherein the linear defects are dislocations and the planar defects are grain boundaries. Usually, the addition of impurities into a metal film is termed alloying and the resultant film is termed an alloyed film. The alloying addition may be either soluble or insoluble in the film. This will determine the choice of possible modes of fabrication. When the alloy addition is soluble, it is included within the limits of solubility at the temperature at which it is introduced. When the alloy addition is insoluble, it is introduced during fabrication and quantity thereof may be significantly better than the quantity capable of being sustained were the alloying addition and the film to be in thermal equilibrium.

    摘要翻译： 根据本公开内容，在薄金属膜中引入某些杂质，例如合金化添加物，以消除导致小丘形成的驱动力或驱动力的影响。 这种薄金属膜通常制造在具有不同于膜本身的不同热膨胀系数的基板上，并且在热循环过程中可以将应力引入膜中。 这种压力可能作为原子运动的驱动力，因此可能是形成小丘。 通过缺陷运动，膜中的诱发应力导致必需的原子运动的载体，并且当力被压缩时，这引起小丘。 在本公开的实践中，引入膜中的杂质添加物通过与引起必需原子运动的缺陷的相互作用影响小丘生长。 在其制造期间，将系统选择的杂质添加物引入到膜中，其抑制由缺陷偏移，线性缺陷和平面缺陷组成的类别中的缺陷运动，其中线性缺陷是位错并且平面缺陷是晶界。 通常，将杂质添加到金属膜中称为合金化，所得到的膜称为合金膜。 合金添加可以是可溶的或不溶于膜。 这将决定可能的制造方式的选择。 当合金添加是可溶的时，它被包括在其引入温度下的溶解度范围内。 当合金添加不溶时，其在制造过程中被引入，并且其量可以显着地优于合金添加和处于热平衡的膜中能够持续的量。

    Apparatus using amorphous magnetic compositions
    39.
    发明授权
    Apparatus using amorphous magnetic compositions 失效
    使用无定形磁性组合物的装置

    公开(公告)号：US3965463A

    公开(公告)日：1976-06-22

    申请号：US581078

    申请日：1975-05-27

    申请人： Praveen Chaudhari ,  Jerome J. Cuomo ,  Richard J. Gambino

    发明人： Praveen Chaudhari ,  Jerome J. Cuomo ,  Richard J. Gambino

    IPC分类号： G02F1/00 ,  G11B11/10 ,  G11B11/105 ,  G11C13/06 ,  G11C19/08 ,  H01F10/13 ,  G11C11/14

    CPC分类号： G02F1/0036 ,  G11B11/10 ,  G11B11/10582 ,  G11B11/10591 ,  G11C13/06 ,  G11C19/08 ,  G11C19/0808 ,  G11C19/085 ,  G11C19/0866 ,  H01F10/135 ,  G11C13/0004

    摘要： Apparatus using amorphous magnetic compositions having uniaxial anisotropy include bubble domain apparatus, light modulating apparatus, permanent magnet systems, and tape and disc information handling systems. The amorphous magnetic composition can be prepared in thin film or bulk form or as particles in a binder. The anisotropy can be parallel to the plane of a film of this material or perpendicular to the film plane. The amorphous material is comprised of a single element or is a multicomponent system where as at least one of the components has an unimpaired spin so that the composition has a net magnetic moment. The amorphous composition exists as a microcrystalline structure having localized atomic ordering over a distance 25-100 A, or as a substantially amorphous structure where localized atomic ordering is over distances less than 25A. Binary and ternary compositions, either alloys or compounds, are suitable. The magnetic properties of the compositions can be changed during fabrication or after fabrication, and the compositions can be doped readily without adversely affecting magnetic properties.

    摘要翻译： 使用具有单轴各向异性的非晶磁性组合物的装置包括气泡域装置，光调制装置，永磁体系统以及磁带和盘信息处理系统。 非晶磁性组合物可以以薄膜或本体形式或作为粘合剂中的颗粒制备。 各向异性可以平行于该材料的膜的平面或垂直于膜平面。 无定形材料由单一元件组成或是多组分系统，其中至少一个组分具有未受损的自旋，使得组合物具有净磁矩。 无定形组合物存在为在距离25-100A处具有局部原子排序的微晶结构，或者作为基本上非晶体结构，其中局部原子排序超过距离小于25A。 二元和三元组合物，合金或化合物都是合适的。 组合物的磁性能可以在制造期间或制造后改变，并且可以容易地掺杂组合物而不会不利地影响磁性。