公开(公告)号：US20150072291A1

公开(公告)日：2015-03-12

申请号：US14020343

申请日：2013-09-06

Applicant: Rohm and Haas Electronic Materials LLC ,  The Texas A&M University System

Inventor： Sangho Cho ,  Guorong Sun ,  Karen L. Wooley ,  James W. Thackeray ,  Peter Trefonas, III

IPC: C08F299/02 ,  G03F7/038

CPC classification number: G03F7/038 ,  C08F293/005 ,  C08F2438/03 ,  C08G61/08 ,  C08G2261/126 ,  C08G2261/128 ,  C08G2261/136 ,  C08G2261/1426 ,  C08G2261/3324 ,  C08G2261/418 ,  C08G2261/80 ,  C08G2261/90 ,  C08L51/003 ,  G03F7/0002 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0395 ,  G03F7/0397 ,  C08F2220/185 ,  C08F220/22 ,  C08F2220/283

Abstract: Disclosed herein is a graft block copolymer comprising a first block polymer; the first block polymer comprising a backbone polymer and a first graft polymer; where the first graft polymer comprises a surface energy reducing moiety that comprises a halocarbon moiety, a silicon containing moiety, or a combination of a halocarbon moiety and a silicon containing moiety; a second block polymer; the second block polymer being covalently bonded to the first block; wherein the second block comprises the backbone polymer and a second graft polymer; where the second graft polymer comprises a functional group that is operative to undergo acid-catalyzed deprotection causing a change of solubility of the graft block copolymer in a developer solvent.

Abstract translation: 本文公开了包含第一嵌段聚合物的接枝嵌段共聚物; 所述第一嵌段聚合物包含主链聚合物和第一接枝聚合物; 其中第一接枝聚合物包含表面能减少部分，其包含卤代烃部分，含硅部分或卤代烃部分和含硅部分的组合; 第二嵌段聚合物; 第二嵌段聚合物共价键合到第一嵌段; 其中所述第二嵌段包含主链聚合物和第二接枝聚合物; 其中第二接枝聚合物包含官能团，其可操作以进行酸催化脱保护，导致接枝嵌段共聚物在显影剂溶剂中的溶解度变化。

公开(公告)号：US08945814B2

公开(公告)日：2015-02-03

申请号：US14027324

申请日：2013-09-16

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： James F. Cameron ,  Vipul Jain ,  Paul J. LaBeaume ,  Jin Wuk Sung ,  James W. Thackeray

IPC: G03F7/004 ,  C07D333/00 ,  C07C315/00 ,  C08F12/30

CPC classification number: C07D333/76 ,  C07C309/17 ,  C07C315/00 ,  C07C2603/86 ,  C07D333/46 ,  C08F12/30 ,  C08F220/24 ,  G03F7/004 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/027 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/16 ,  G03F7/20 ,  G03F7/2004 ,  G03F7/2059 ,  G03F7/32

Abstract: Acid generator compounds are provided that are particularly useful as photoresist composition components. Preferred acid generators include cyclic sulfonium compounds that comprise a covalently linked acid-labile group.

Abstract translation: 提供了特别可用作光致抗蚀剂组合物组分的酸发生剂化合物。 优选的酸产生剂包括包含共价连接的酸不稳定基团的环状锍化合物。

公开(公告)号：US11880134B2

公开(公告)日：2024-01-23

申请号：US16204839

申请日：2018-11-29

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Emad Aqad ,  James F. Cameron ,  James W. Thackeray

IPC: G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  G03F7/26 ,  G03F7/039 ,  C07C309/10 ,  C07C309/19 ,  C07C62/06 ,  C07C309/12 ,  C07C395/00 ,  C07D517/00 ,  C07C309/06 ,  C07C309/16 ,  C07D345/00

CPC classification number: G03F7/0045 ,  C07C62/06 ,  C07C309/06 ,  C07C309/10 ,  C07C309/12 ,  C07C309/16 ,  C07C309/19 ,  C07C395/00 ,  C07D345/00 ,  C07D517/00 ,  G03F7/0042 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/16 ,  G03F7/2004 ,  G03F7/26 ,  C07C2603/74

Abstract: New Te-salt compounds, including photoactive tellurium compounds useful for Extreme Ultraviolet Lithography.

公开(公告)号：US11852972B2

公开(公告)日：2023-12-26

申请号：US17084993

申请日：2020-10-30

Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLC

Inventor： Tomas Marangoni ,  Emad Aqad ,  James W. Thackeray ,  James F. Cameron ,  Xisen Hou ,  ChoongBong Lee

IPC: G03F7/004 ,  G03F7/30 ,  G03F7/20

CPC classification number: G03F7/0045 ,  G03F7/2004 ,  G03F7/2041 ,  G03F7/30

Abstract: A photoresist composition, comprising an acid-sensitive polymer comprising a repeating unit having an acid-labile group; an iodonium salt comprising an anion and a cation, the iodonium salt having Formula (1):




wherein Z− is an organic anion; Ar1 is substituted or unsubstituted C4-60 heteroaryl group comprising a furan heterocycle; and R1 is substituted or unsubstituted hydrocarbon group as provided herein, wherein the cation optionally comprises an acid-labile group, wherein Ar1 and R1 are optionally connected to each other via a single bond or one or more divalent linking groups to form a ring, and wherein the iodonium salt is optionally covalently bonded through Ar1 or substituent thereof as a pendant group to a polymer, the iodonium salt is optionally covalently bonded through R1 or substituent thereof as a pendant group to a polymer, or the iodonium salt is optionally covalently bonded through Z− as a pendant group to a polymer; and a solvent.

公开(公告)号：US20230212112A1

公开(公告)日：2023-07-06

申请号：US18174316

申请日：2023-02-24

Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLC

Inventor： Emad Aqad ,  James W. Thackeray ,  James F. Cameron

IPC: C07C309/06 ,  C07C303/32 ,  G03F7/039 ,  G03F7/004 ,  C08F224/00 ,  C07C309/07 ,  C07C309/12 ,  C07C309/17 ,  C07C309/20 ,  C07C309/23 ,  C07C309/42

CPC classification number: C07C309/06 ,  C07C303/32 ,  G03F7/0397 ,  G03F7/0045 ,  C08F224/00 ,  C07C309/07 ,  C07C309/12 ,  C07C309/17 ,  C07C309/20 ,  C07C309/23 ,  C07C309/42

Abstract: A monomer has the structure




wherein R is an organic group comprising a polymerizable carbon-carbon double bond or carbon-carbon triple bond; X and Y are independently at each occurrence hydrogen or a non-hydrogen substituent; EWG1 and EWG2 are independently at each occurrence an electron-withdrawing group; p is 0, 1, 2, 3, or 4; n is 1, 2, 3, or 4; and M+ is an organic cation. A polymer prepared from monomer is useful as a component of a photoresist composition.

公开(公告)号：US11505565B2

公开(公告)日：2022-11-22

申请号：US16204960

申请日：2018-11-29

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Emad Aqad ,  James F. Cameron ,  James W. Thackeray

IPC: C07F11/00 ,  G03F7/16 ,  G03F7/027 ,  G03F7/004 ,  G03F7/039 ,  G03F7/20

Abstract: New Te-zwitterion compounds are provided, including photoactive tellurium salt compounds useful for Extreme Ultraviolet Lithography.

公开(公告)号：US20220091506A1

公开(公告)日：2022-03-24

申请号：US17462216

申请日：2021-08-31

Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLC

Inventor： Ke Yang ,  Emad Aqad ,  James F. Cameron ,  Suzanne M. Coley ,  Manibarsha Goswami ,  ChoongBong Lee ,  Bhooshan Popere ,  James W. Thackeray ,  Brandon Wenning

IPC: G03F7/039 ,  G03F7/004 ,  C08F212/14 ,  C08F220/18

Abstract: A photoresist composition comprises a first polymer comprising a first repeating unit comprising a hydroxy-aryl group and a second repeating unit comprising an acid-labile group, wherein the first polymer does not comprise a lactone group; a second polymer comprising a first repeating unit comprising a hydroxy-aryl group, a second repeating unit comprising an acid-labile group, and a third repeating unit comprising a lactone group; a photoacid generator; and a solvent.

公开(公告)号：US10901316B2

公开(公告)日：2021-01-26

申请号：US16681142

申请日：2019-11-12

Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLC

Inventor： Emad Aqad ,  James W. Thackeray ,  James F. Cameron

IPC: G03F7/004 ,  C08L73/00 ,  C08L81/06 ,  C08L81/08 ,  G03F7/20 ,  C08L27/10 ,  H01L21/027 ,  C08F16/24 ,  C08L27/00 ,  C08F220/28 ,  G03F7/039

Abstract: A monomer having formula (I): wherein in formula (I), groups and variables are the same as described in the specification.

公开(公告)号：US20190163058A1

公开(公告)日：2019-05-30

申请号：US16204839

申请日：2018-11-29

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Emad Aqad ,  James F. Cameron ,  James W. Thackeray

IPC: G03F7/004 ,  C07F11/00 ,  C07C309/10 ,  C07C309/19 ,  C07C62/06 ,  G03F7/16 ,  G03F7/20 ,  G03F7/26

Abstract: New Te-salt compounds are provided, including photoactive tellurium salt compounds useful for Extreme Ultraviolet Lithography.

公开(公告)号：US09815930B2

公开(公告)日：2017-11-14

申请号：US14820647

申请日：2015-08-07

Applicant: The University of Queensland ,  Rohm and Haas Electronic Materials LLC

Inventor： James W. Thackeray ,  Ke Du ,  Peter Trefonas, III ,  Idriss Blakey ,  Andrew Keith Whittaker

IPC: C08F293/00 ,  G03F7/038 ,  G03F7/20 ,  G03F7/32 ,  G03F7/004 ,  G03F7/039 ,  G03F7/075 ,  C08F220/22 ,  C09D153/00 ,  G03F7/11

CPC classification number: C08F293/00 ,  C08F220/22 ,  C08F293/005 ,  C08F2438/03 ,  C09D153/00 ,  G03F7/0046 ,  G03F7/0048 ,  G03F7/038 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0758 ,  G03F7/11 ,  G03F7/2004 ,  G03F7/2059 ,  G03F7/322

Abstract: A block copolymer useful in electron beam and extreme ultraviolet photolithography includes a first block with units derived from a base-solubility-enhancing monomer and an out-of-band absorbing monomer, and a second block having a low surface energy. Repeat units derived from the out-of-ban absorbing monomer allow the copolymer to absorb significantly in the wavelength range 150 to 400 nanometers. When incorporated into a photoresist composition with a photoresist random polymer, the block copolymer self-segregates to form a top layer that effectively screens out-of-band radiation.