公开(公告)号：US11276798B2

公开(公告)日：2022-03-15

申请号：US16822673

申请日：2020-03-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungwook Hwang ,  Sungjin Kang ,  Junsik Hwang ,  Junhee Choi

IPC: H01L33/00 ,  H01L25/075 ,  H01L33/50 ,  H01L33/62

Abstract: Provided is a display device including a substrate, a transfer guiding mold provided on the substrate and including a plurality of openings, and a plurality of micro light emitting diodes (LEDs) provided on the substrate in the plurality of openings, wherein a height of the transfer guiding mold is less than twice a height of each of the plurality of micro LEDs.

公开(公告)号：US10211194B2

公开(公告)日：2019-02-19

申请号：US14656298

申请日：2015-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kunmo Chu ,  Changyoul Moon ,  Sunghee Lee ,  Junsik Hwang

IPC: H01L23/48 ,  H01L25/00 ,  H01L23/00 ,  H01L25/065 ,  H01L33/00

Abstract: A semiconductor device includes a base substrate and a semiconductor chip on the base substrate, the semiconductor chip including a first layer structure and a second layer structure opposite to the first layer structure, at least one of the first and second layer structures including a semiconductor device portion, and a bonding structure between the first layer structure and the second layer structure, the bonding structure including a silver-tin (Ag—Sn) compound and a nickel-tin (Ni—Sn) compound.

公开(公告)号：US20250151474A1

公开(公告)日：2025-05-08

申请号：US19009427

申请日：2025-01-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seogwoo Hong ,  Hyunjoon Kim ,  Joonyong Park ,  Kyungwook Hwang ,  Junsik Hwang

IPC: H10H20/831 ,  H10H29/14

Abstract: Provided is a light-emitting device including a body including a first semiconductor layer, an active layer, and a second semiconductor layer, a first electrode and a second electrode provided on a first surface of the body, the first electrode and the second electrode being in contact with the first semiconductor layer and the second semiconductor layer, respectively, and a third electrode and a fourth electrode provided on a second surface of the body, the third electrode and the fourth electrode being in contact with the first semiconductor layer and the second semiconductor layer, respectively.

公开(公告)号：US12283646B2

公开(公告)日：2025-04-22

申请号：US17531210

申请日：2021-11-19

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Kyungwook Hwang ,  Ho Won Jang ,  Junsik Hwang

IPC: H01L33/38 ,  H01L27/15 ,  H01L33/00 ,  H01L33/40

Abstract: An LED device includes a light emission layer including a first semiconductor layer including a first surface and a second surface facing the first surface, the second surface having an area larger than an area of the first surface, an active layer on the first surface, and a second semiconductor layer on the active layer, an insulating layer on the first surface, the insulating layer defining an open region of the first semiconductor layer, a first electrode that contacts the first semiconductor layer via the open region, and a second electrode on the second semiconductor layer and contacting the second semiconductor layer.

公开(公告)号：US20250048783A1

公开(公告)日：2025-02-06

申请号：US18920608

申请日：2024-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joonyong PARK ,  Seogwoo Hong ,  kyungwook Hwang ,  Hyunjoon Kim ,  Junsik Hwang

IPC: H01L33/00 ,  H01L27/15 ,  H01L33/62

Abstract: Provided is a method of manufacturing a display, the method including a first operation of transferring a plurality of micro light emitting diodes (LEDs) to a plurality of wells of an interposer through a fluidic self assembly (FSA) process, a second operation of aligning a driving substrate on the interposer, a third operation of injecting a penetrating solvent between the interposer and the driving substrate, such that the penetrating solvent penetrates between the plurality of micro LEDs and the plurality of wells, and a fourth operation of transferring the plurality of micro LEDs to the driving substrate by radiating light to the interposer to vaporize the penetrating solvent.

公开(公告)号：US20250022927A1

公开(公告)日：2025-01-16

申请号：US18738877

申请日：2024-06-10

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  FOUNDATION OF SOONGSIL UNIVERSITY-INDUSTRY COOPERATION

Inventor： Youngtek OH ,  Geonwook Yoo ,  Kyungwook Hwang ,  Changkun Park ,  Sanghoon Song ,  Minjae Yeom ,  Gyuhyung Lee ,  Junsik Hwang

IPC: H01L29/417 ,  H01L29/20 ,  H01L29/66 ,  H01L29/778 ,  H01L33/00

Abstract: A semiconductor device includes a channel layer including a first group III-V semiconductor material; a barrier layer provided on an upper surface of the channel layer, the barrier layer including a second group III-V semiconductor material that is different than the first group III-V semiconductor material; a plurality of sources/drains spaced apart from each other on an upper surface of the barrier layer; a gate insulating layer covering the upper surface of the barrier layer and upper surfaces of the plurality of sources/drains; a gate provided on an upper surface of the gate insulating layer, the gate not overlapping the plurality of sources/drains; a plurality of source/drain electrodes electrically connected to corresponding sources/drains among the plurality of sources/drains; and a gate electrode electrically connected to the gate, wherein the plurality of source/drain electrodes has a diagonally symmetrical arrangement.

公开(公告)号：US20240234180A1

公开(公告)日：2024-07-11

申请号：US18409400

申请日：2024-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungwook HWANG ,  Youngtek Oh ,  Dongkyun Kim ,  Junsik Hwang ,  Minchul Yu

IPC: H01L21/67

CPC classification number: H01L21/67132

Abstract: Provided are a wiper for transferring a micro semiconductor chip and an apparatus for collecting a micro semiconductor chip. The wiper includes an absorber for absorbing a solution used to wet transfer a micro semiconductor chip, and a protective layer coated on the absorber.

公开(公告)号：US11898244B2

公开(公告)日：2024-02-13

申请号：US17497523

申请日：2021-10-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jooho Lee ,  Yongsung Kim ,  Sanghoon Song ,  Wooyoung Yang ,  Changseung Lee ,  Sungjin Lim ,  Junsik Hwang

IPC: C23C16/34 ,  C23C16/50 ,  C23C16/06 ,  C23C16/44 ,  H01M4/04 ,  H01M10/052 ,  H01J37/32 ,  H01M16/00 ,  C23C16/00

CPC classification number: C23C16/34 ,  C23C16/00 ,  C23C16/06 ,  C23C16/4408 ,  C23C16/50 ,  H01J37/32 ,  H01J37/3244 ,  H01M4/0428 ,  H01M10/052 ,  H01M16/00 ,  H01J2237/3321 ,  H01M2220/30 ,  H01M2300/0068

Abstract: A method of forming a lithium (Li)-based film, may include: supplying a Li source material into a reaction chamber in which a substrate is disposed; supplying phosphor (P) and oxygen (O) source materials and a nitrogen (N) source material into the reaction chamber; and generating plasma in the reaction chamber to form a Li-based film on the substrate from the Li, P, O, and N source materials, wherein the supplying of the Li source material into the reaction chamber and the supplying of the P and O source materials and the N source material into the reaction chamber are performed with a time interval, and wherein the Li source material supplied into the reaction chamber is deposited on the substrate, and the P and O source materials supplied into the reaction chamber are adsorbed on the Li source material.

公开(公告)号：US11769855B2

公开(公告)日：2023-09-26

申请号：US17194942

申请日：2021-03-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungwook Hwang ,  Junsik Hwang ,  Seogwoo Hong

IPC: H01L33/04 ,  H01L25/075 ,  H01L33/32 ,  H01L33/62 ,  H01L33/14 ,  H01L33/16 ,  H01L33/12 ,  H01L33/50

CPC classification number: H01L33/04 ,  H01L25/0753 ,  H01L33/12 ,  H01L33/14 ,  H01L33/16 ,  H01L33/32 ,  H01L33/62 ,  H01L33/50

Abstract: Provided is a micro light emitting device and a display apparatus having the micro light emitting device. The micro light emitting device includes a first-type semiconductor layer provided on a substrate, a superlattice layer provided on the first-type semiconductor layer, a current blocking layer provided on a side portion of the superlattice layer, an active layer provided on the superlattice layer and the current blocking layer, and a second-type semiconductor layer provided on the active layer.

公开(公告)号：US11764095B2

公开(公告)日：2023-09-19

申请号：US17324609

申请日：2021-05-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungwook Hwang ,  Junsik Hwang

IPC: H01L21/683 ,  H01L25/075 ,  H01L33/50 ,  H01L33/52 ,  H01L33/62

CPC classification number: H01L21/6835 ,  H01L25/0753 ,  H01L33/50 ,  H01L33/52 ,  H01L33/62 ,  H01L2221/68309 ,  H01L2221/68313 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2933/005 ,  H01L2933/0041 ,  H01L2933/0066

Abstract: A wet alignment method for a micro-semiconductor chip and a display transfer structure are provided. The wet alignment method for a micro-semiconductor chip includes: supplying a liquid to a transfer substrate including a plurality of grooves; supplying the micro-semiconductor chip onto the transfer substrate; scanning the transfer substrate by using an absorber capable of absorbing the liquid. According to the wet alignment method, the micro-semiconductor chip may be transferred onto a large area.