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    SEMICONDUCTOR DEVICE, WIRELESS SENSOR, AND ELECTRONIC DEVICE
    31.
    发明申请
    SEMICONDUCTOR DEVICE, WIRELESS SENSOR, AND ELECTRONIC DEVICE 有权
    半导体器件，无线传感器和电子器件

    公开(公告)号：US20160094236A1

    公开(公告)日：2016-03-31

    申请号：US14862284

    申请日：2015-09-23

    Applicant: Semiconductor Energy Laboratory Co., LTD.

    Inventor： Yutaka SHIONOIRI ,  Kiyoshi KATO ,  Tomoaki ATSUMI

    IPC: H03M1/00 ,  H03M1/12 ,  H03M1/38

    CPC classification number: H03M1/002 ,  G11C27/02 ,  H03M1/1245 ,  H03M1/466

    Abstract: An object is to reduce power consumption of an analog-digital converter circuit. An analog potential obtained in a sensor or the like is held in a sample-and-hold circuit including a transistor with an extremely low off-state current. In the sample-and-hold circuit, the analog potential is held in a node which is able to hold a charge by turning off the transistor. Then, power supply to a buffer circuit or the like included in the sample-and-hold circuit is stopped to reduce power consumption. In a structure where a potential is held in each node, power consumption can be further reduced when a transistor with an extremely low off-state current is connected to a node holding a potential of a comparator, a successive approximation register, a digital-analog converter circuit, or the like, and power supply to these circuits is stopped.

    Abstract translation: 目的是减少模数转换器电路的功耗。 在传感器等中获得的模拟电位保持在包括极低截止电流的晶体管的采样保持电路中。 在采样保持电路中，模拟电位保持在能够通过关断晶体管来保持电荷的节点。 然后，停止对包含在取样保持电路中的缓冲电路等的电力供给，以降低功耗。 在每个节点中保持电位的结构中，当具有非常低的截止电流的晶体管连接到保持比较器的电位的节点，逐次逼近寄存器，数字模拟 转换器电路等，停止对这些电路的供电。

    SEMICONDUCTOR DEVICE
    33.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20140042496A1

    公开(公告)日：2014-02-13

    申请号：US14060020

    申请日：2013-10-22

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Takuro OHMARU ,  Yutaka SHIONOIRI

    IPC: H01L27/105

    CPC classification number: H01L27/105 ,  H03K19/1776 ,  H03K19/17764 ,  H03K19/17772

    Abstract: A programmable analog device in which data can be held even when supply of a power supply potential is stopped. The programmable circuit includes unit cells connected in parallel or in series, and each of the unit cells includes an analog element. A conduction state of each of the unit cells is changed between an on state and an off state. Each of the unit cells includes, as a switch of the unit cell, a first transistor having a sufficiently low off-state current and a second transistor, a gate electrode of the second transistor being electrically connected to a source or drain electrode of the first transistor. The conduction state of the unit cell is controlled with a potential of the gate electrode of the second transistor, which can be kept even when no power is supplied thanks to the low off-state current of the first transistor.

    Abstract translation: 即使停止供给电源电位，也可以进行数据保持的可编程模拟装置。 可编程电路包括并联或串联连接的单位单元，并且每个单位单元包括模拟元件。 每个单电池的导通状态在导通状态和断开状态之间变化。 每个单电池包括作为单位电池的开关的具有足够低的截止电流的第一晶体管和第二晶体管，第二晶体管的栅电极电连接到第一晶体管的源电极或漏电极 晶体管。 单电池的导通状态由第二晶体管的栅电极的电位来控制，即使在没有供电的情况下，由于第一晶体管的低截止电流也可以保持该电位。

    DEMODULATION CIRCUIT AND RFID TAG INCLUDING THE DEMODULATION CIRCUIT
    34.
    发明申请
    DEMODULATION CIRCUIT AND RFID TAG INCLUDING THE DEMODULATION CIRCUIT 有权
    解调电路和RFID标签，包括解调电路

    公开(公告)号：US20130314152A1

    公开(公告)日：2013-11-28

    申请号：US13960130

    申请日：2013-08-06

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Takanori MATSUZAKI ,  Yutaka SHIONOIRI

    IPC: H03D1/18

    CPC classification number: H03D1/18 ,  H01L27/1225

    Abstract: An object is to provide a demodulation circuit having a sufficient demodulation ability. Another object is to provide an RFID tag which uses a demodulation circuit having a sufficient demodulation ability. A material which enables a reverse current to be small enough, for example, an oxide semiconductor material, which is a wide bandgap semiconductor, is used in part of a transistor included in a demodulation circuit. By using the semiconductor material which enables a reverse current of a transistor to be small enough, a sufficient demodulation ability can be secured even when an electromagnetic wave having a high amplitude is received.

    Abstract translation: 目的在于提供具有足够的解调能力的解调电路。 另一个目的是提供使用具有足够的解调能力的解调电路的RFID标签。 在解调电路中包括的晶体管的一部分中使用能使反向电流足够小的材料，例如，宽带隙半导体的氧化物半导体材料。 通过使用能够使晶体管的反向电流足够小的半导体材料，即使接收到具有高振幅的电磁波也能够确保足够的解调能力。

    MEMORY DEVICE AND SEMICONDUCTOR DEVICE
    35.
    发明申请
    MEMORY DEVICE AND SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20250120181A1

    公开(公告)日：2025-04-10

    申请号：US18982263

    申请日：2024-12-16

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yutaka SHIONOIRI ,  Hiroyuki MIYAKE ,  Kiyoshi KATO

    IPC: H10D86/80 ,  G11C16/04 ,  H10B41/70 ,  H10B69/00 ,  H10D30/67 ,  H10D86/40 ,  H10D86/60

    Abstract: It is an object to provide a memory device whose power consumption can be suppressed and a semiconductor device including the memory device. As a switching element for holding electric charge accumulated in a transistor which functions as a memory element, a transistor including an oxide semiconductor film as an active layer is provided for each memory cell in the memory device. The transistor which is used as a memory element has a first gate electrode, a second gate electrode, a semiconductor film located between the first gate electrode and the second gate electrode, a first insulating film located between the first gate electrode and the semiconductor film, a second insulating film located between the second gate electrode and the semiconductor film, and a source electrode and a drain electrode in contact with the semiconductor film.

    MEMORY DEVICE AND SEMICONDUCTOR DEVICE
    37.
    发明申请
    MEMORY DEVICE AND SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210167067A1

    公开(公告)日：2021-06-03

    申请号：US17061920

    申请日：2020-10-02

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yutaka SHIONOIRI ,  Hiroyuki MIYAKE ,  Kiyoshi KATO

    IPC: H01L27/105 ,  H01L27/1156 ,  H01L27/12 ,  H01L27/13 ,  H01L27/115 ,  H01L29/786

    Abstract: It is an object to provide a memory device whose power consumption can be suppressed and a semiconductor device including the memory device. As a switching element for holding electric charge accumulated in a transistor which functions as a memory element, a transistor including an oxide semiconductor film as an active layer is provided for each memory cell in the memory device. The transistor which is used as a memory element has a first gate electrode, a second gate electrode, a semiconductor film located between the first gate electrode and the second gate electrode, a first insulating film located between the first gate electrode and the semiconductor film, a second insulating film located between the second gate electrode and the semiconductor film, and a source electrode and a drain electrode in contact with the semiconductor film.

    SEMICONDUCTOR DEVICE
    39.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20180174891A1

    公开(公告)日：2018-06-21

    申请号：US15895466

    申请日：2018-02-13

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yutaka SHIONOIRI ,  Kosei NODA

    IPC: H01L21/762 ,  H01L27/12 ,  H01L27/06

    CPC classification number: H01L21/76254 ,  H01L27/0688 ,  H01L27/1225

    Abstract: An object is to provide a semiconductor device with reduced standby power. A transistor including an oxide semiconductor as an active layer is used as a switching element, and supply of a power supply voltage to a circuit in an integrated circuit is controlled by the switching element. Specifically, when the circuit is in an operation state, supply of the power supply voltage to the circuit is performed by the switching element, and when the circuit is in a stop state, supply of the power supply voltage to the circuit is stopped by the switching element. In addition, the circuit supplied with the power supply voltage includes a semiconductor element which is a minimum unit included in an integrated circuit formed using a semiconductor. Further, the semiconductor included in the semiconductor element contains silicon having crystallinity (crystalline silicon).

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