Semiconductor device
    31.
    发明授权

    公开(公告)号:US10097167B2

    公开(公告)日:2018-10-09

    申请号:US15652316

    申请日:2017-07-18

    Abstract: To provide an asynchronous circuit capable of power gating, a semiconductor device is configured with first to third terminals, a latch circuit, and a memory circuit. The third terminal outputs “false” when “false” is input to the first terminal and the second terminal. The third terminal outputs “true” when “true” is input to the first terminal and the second terminal. The third terminal outputs a truth value that is the same as the previous output, when “true” is input to one of the first terminal and the second terminal and “false” is input to the other of the first terminal and the second terminal. The memory circuit is capable of storing data stored in the latch circuit, while supply of a power supply voltage is stopped. The memory circuit includes a transistor that contains a metal oxide in a channel formation region.

    Semiconductor device including power storage elements, switches, and circuit including load

    公开(公告)号:US10033379B2

    公开(公告)日:2018-07-24

    申请号:US15412094

    申请日:2017-01-23

    Abstract: To generate an analog current without restriction by a power supply voltage. A semiconductor device includes a first node, a second node, a first- to an n-th-stage power storage element (n is an integer greater than or equal to 2), and a first- to an n-th-stage switch. The capacities of the first- to the n-th-stage power storage element are different from one another. The first- to the n-th-stage power storage element are electrically connected in parallel between the first node and the second node. A first terminal of a k-th stage power storage element (k is an integer greater than or equal to 1 and less than or equal to n) is electrically connected to the first input node via a k-th stage switch. The on/off states of the first- to the n-th-stage switch are controlled by a first to an n-th signal.

    Semiconductor device, electronic component, and electronic device

    公开(公告)号:US10027324B2

    公开(公告)日:2018-07-17

    申请号:US15471516

    申请日:2017-03-28

    Abstract: Skew of a multi-context PLD in context switch is reduced to achieve low power consumption. The frequency of a clock signal is switched in context switch operation in accordance with circuit operation to secure time required for context switch. By returning the frequency of the clock signal to the original frequency after executing the context switch, the PLD can maintain high-speed processing and perform the context switch accurately and safely. The time required for the context switch mainly depends on a hardware structure (circuit layout including a parasitic component). Thus, the reliability in the context switch can be improved when time that is equal to or longer than the longest time required for circuit change is secured.

    Semiconductor device, device, and electronic device

    公开(公告)号:US09990207B2

    公开(公告)日:2018-06-05

    申请号:US14612356

    申请日:2015-02-03

    CPC classification number: G06F9/4401

    Abstract: A semiconductor device with improved operating speed is provided. A semiconductor device including a memory circuit has a function of storing a start-up routine in the memory circuit and executing the start-up routine, a function of operating the memory circuit as a buffer memory device after executing the start-up routine, and a function of loading the start-up routine into the memory circuit from outside before the semiconductor device is powered off.

    Imaging device
    39.
    发明授权

    公开(公告)号:US09905598B2

    公开(公告)日:2018-02-27

    申请号:US14688406

    申请日:2015-04-16

    Abstract: An image-capturing device which is capable of capturing high quality images and can be formed at a low cost is provided. The image-capturing device includes a first circuit including a first transistor and a second transistor, and a second circuit including a third transistor and a photodiode. The first transistor is provided on a first surface of a silicon substrate. The second transistor is provided over the first transistor. The photodiode is provided to the silicon substrate. The silicon substrate includes a second insulating layer surrounding a side surface of the photodiode. The first transistor is a p-channel transistor including an active region in the silicon substrate. The third transistor is an n-channel transistor including an oxide semiconductor layer as an active layer. A light-receiving surface of the photodiode is a surface of the silicon substrate opposite to the first surface.

    Device comprising programmable logic element

    公开(公告)号:US09869716B2

    公开(公告)日:2018-01-16

    申请号:US14612745

    申请日:2015-02-03

    Abstract: Provided is a device capable of generating test patterns even after the design stage. The area of a circuit which is included in the device and unnecessary during normal operation can be reduced. The device includes a first circuit and a second circuit. The second circuit includes a plurality of third circuits, a plurality of fourth circuits, and a fifth circuit and has a function of generating a signal for testing operation of the first circuit and a function of operating as part of the first circuit. The fourth circuit has a function of storing a first data and a function of storing a second data. The fifth circuit has a function of writing the first data to the plurality of fourth circuits, a function of writing the second data to the plurality of fourth circuits, and a function of reading the second data from the plurality of fourth circuits.

Patent Agency Ranking