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69 条记录 (耗时 0.052 秒)

    Lighting system
    33.
    发明授权
    Lighting system 有权
    照明系统

    公开(公告)号：US07736019B2

    公开(公告)日：2010-06-15

    申请号：US11544706

    申请日：2006-10-10

    申请人： Junichi Shimada ,  Yoichi Kawakami ,  Motokazu Yamada ,  Masaru Kato

    发明人： Junichi Shimada ,  Yoichi Kawakami ,  Motokazu Yamada ,  Masaru Kato

    IPC分类号： F21V5/00

    CPC分类号： F21V5/04 ,  F21S8/026 ,  F21S8/04 ,  F21V5/003 ,  F21V9/00 ,  F21V13/02 ,  F21V29/763 ,  F21V29/89 ,  F21W2131/301 ,  F21W2131/304 ,  F21W2131/402 ,  F21Y2103/10 ,  F21Y2105/10 ,  F21Y2113/13 ,  F21Y2115/10

    摘要： The lighting system according to the present invention includes an electrical wiring substrate in which a connector to a power source is formed, a plurality of LED chips mounted in a predetermined array pattern on the electrical wiring substrate, a deflection lens array disposed in proximity to the LED chips between the LED chip and the predetermined illumination region and a housing for receiving the electrical wiring substrate and the deflection lens array. A plurality of deflection lenses are integrally molded in the deflection lens array to lead lights from the LED chips to the predetermined illumination region in a state where the lights from the LED chips are superposed with each other. The lights emitted from the LED chips are collected in a state where they all are superposed in a common, single illumination region through the deflection lenses.

    摘要翻译： 根据本发明的照明系统包括：电布线基板，其中形成有连接到电源的连接器，在电布线基板上以预定的阵列图案安装的多个LED芯片;偏转透镜阵列， LED芯片和预定照明区域之间的LED芯片和用于接收电布线基板和偏转透镜阵列的壳体。 多个偏转透镜一体地模制在偏转透镜阵列中，以使来自LED芯片的光彼此重叠的状态将LED从LED芯片引导到预定的照明区域。 从LED芯片发出的光线通过偏转透镜以共同的单个照明区域重叠的状态被收集。

    Light emitting device
    37.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号：US06738175B2

    公开(公告)日：2004-05-18

    申请号：US10149755

    申请日：2002-06-13

    申请人： Daisuke Morita ,  Motokazu Yamada

    发明人： Daisuke Morita ,  Motokazu Yamada

    IPC分类号： G02F103

    CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/34333

    摘要： To enhance the emission output of the light emitting device including an active layer made of nitride semiconductor containing In, the light emitting device having an active layer between the n-type semiconductor layer and the p-type semiconductor layer, characterized in that the active layer comprises an well layer made of Inx1Ga1−x1N (x1>0) containing In and a first barrier layer made of Aly2Ga1−y2N (y2>0) containing Al formed on the well layer.

    摘要翻译： 为了增强发光器件的发射输出，其包括由包含In的氮化物半导体制成的有源层，发光器件在n型半导体层和p型半导体层之间具有有源层，其特征在于，所述有源层 包含由In构成的In x 1 Ga 1-x1 N（x1> 0）的阱层和在阱层上形成的含Al的AlI 2 Ga 1-y 2 N（y2> 0）的第一势垒层。