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    Method for fabricating a component having an electrical contact region
    31.
    发明授权
    Method for fabricating a component having an electrical contact region 有权
    一种具有电接触区域的部件的制造方法

    公开(公告)号：US07435605B2

    公开(公告)日：2008-10-14

    申请号：US11825895

    申请日：2007-07-09

    申请人： Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

    发明人： Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

    IPC分类号： H01L21/00

    CPC分类号： H01L33/40 ,  H01L33/0079 ,  H01L33/30 ,  Y10S438/933

    摘要： A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.

    摘要翻译： 一种制造在外延生长的半导体层序列的基于n导电AlGaInP基或AlGaInP的外层上具有电接触区域的部件的方法，其中应用包括Au和至少一种掺杂剂的电接触材料 然后将外层退火。 掺杂剂含有选自Ge，Si，Sn和Te中的至少一种元素。 此外，公开了一种组件，其包括具有发射电磁辐射的有源区的外延生长的半导体层序列，所述半导体层序列具有基于导电AlGaInP或AlGaInAs的外层，施加电接触区域 使用所述方法。

    Method for fabricating a component having an electrical contact region
    32.
    发明申请
    Method for fabricating a component having an electrical contact region 有权
    一种具有电接触区域的部件的制造方法

    公开(公告)号：US20070264740A1

    公开(公告)日：2007-11-15

    申请号：US11825895

    申请日：2007-07-09

    申请人： Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

    发明人： Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

    IPC分类号： H01L33/00

    CPC分类号： H01L33/40 ,  H01L33/0079 ,  H01L33/30 ,  Y10S438/933

    摘要： A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.

    摘要翻译： 一种制造在外延生长的半导体层序列的基于n导电AlGaInP基或AlGaInP的外层上具有电接触区域的部件的方法，其中应用包括Au和至少一种掺杂剂的电接触材料 然后将外层退火。 掺杂剂含有选自Ge，Si，Sn和Te中的至少一种元素。 此外，公开了一种组件，其包括具有发射电磁辐射的有源区的外延生长的半导体层序列，该半导体层序列具有基于n导电AlGaInP或AlGaInAs的外层，施加电接触区域 使用所述方法。

    TTG-DFB laser diode
    33.
    发明授权
    TTG-DFB laser diode 失效
    TTG-DFB激光二极管

    公开(公告)号：US5222087A

    公开(公告)日：1993-06-22

    申请号：US872405

    申请日：1992-04-23

    申请人： Wolfgang Thulke ,  Stefan Illek

    发明人： Wolfgang Thulke ,  Stefan Illek

    IPC分类号： H01S5/00 ,  H01S5/026 ,  H01S5/06 ,  H01S5/062 ,  H01S5/12

    CPC分类号： H01S5/06206 ,  H01S5/12

    摘要： A TTG-DFB laser diode on a doped substrate having a stripe-shaped layer structure that has an intermediate layer between an active layer and a tuning layer. A confinement layer laterally adjoins this layer structure at both sides, is doped for the same conductivity type as the substrate and is electrically conductively connected to the substrate through an interruption of the layers situated therebelow. An upper region, that respectively extends up to the surface and that is oppositely doped, is formed in the confinement layer above the layer structure. A lateral region, separated therefrom and that is electrically conductively connected via a lower confinement layer to a side of the layer structure facing toward the substrate, is formed in the confinement layer. Contact layers and contacts are applied on the upper region and on the lateral region, and a contact is applied on the substrate, so that separate current injection into both the active layer and the tuning layer is possible through the intermediate layer.

    摘要翻译： 掺杂衬底上的TTG-DFB激光二极管具有带状层结构，其在有源层和调谐层之间具有中间层。 在两侧侧向邻接该层结构的限制层被掺杂用于与衬底相同的导电类型，并且通过中间位于其下的层而导电地连接到衬底。 在层结构上方的限制层中形成分别延伸到表面并且相对掺杂的上部区域。 在限制层中形成有从其隔开的并且经由下限制层导电连接到层结构面向衬底的一侧的横向区域。 接触层和触点施加在上部区域和横向区域上，并且在基板上施加接触，从而可以通过中间层分别注入有源层和调谐层。

    Optoelectronic semiconductor chip
    36.
    发明授权
    Optoelectronic semiconductor chip 有权
    光电半导体芯片

    公开(公告)号：US08378371B2

    公开(公告)日：2013-02-19

    申请号：US12298750

    申请日：2007-03-26

    申请人： Stefan Illek

    发明人： Stefan Illek

    IPC分类号： H01L33/00

    CPC分类号： H01L33/387 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An optoelectronic semiconductor chip (1) is specified having a semiconductor body (2) which comprises a semiconductor layer sequence and an active area which is suitable for radiation production, and having a radiation-permeable and electrically conductive contact layer (6) which is arranged on the semiconductor body and is electrically conductively connected to the active area, with the contact layer extending over a barrier layer (5) in the semiconductor layer sequence and over a connecting layer (4) in the semiconductor layer sequence, and with the contact layer being electrically conductively connected to the active area via a connecting area (7) of the connecting layer. A method is also specified for producing a contact structure for an optoelectronic semiconductor chip which is suitable for radiation production.

    摘要翻译： 光电子半导体芯片（1）具有半导体本体（2），该半导体本体（2）包括半导体层序列和适于辐射生产的有源区，并且具有辐射可透过导电的接触层（6） 并且导电地连接到有源区，其中接触层在半导体层序列中的阻挡层（5）上延伸并且在半导体层序列中的连接层（4）上方，并且与接触层 经由连接层的连接区域（7）与导电区域电连接。 还规定了用于制造适合于辐射生产的光电子半导体芯片的接触结构的方法。

    Surface emitting semiconductor laser and method for producing it
    37.
    发明授权
    Surface emitting semiconductor laser and method for producing it 有权
    表面发射半导体激光器及其制造方法

    公开(公告)号：US08325778B2

    公开(公告)日：2012-12-04

    申请号：US12808979

    申请日：2008-12-10

    申请人： Stefan Illek

    发明人： Stefan Illek

    IPC分类号： H01S5/00 ,  H01L21/00

    CPC分类号： H01S5/026 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/041 ,  H01S5/0425 ,  H01S5/1071 ,  H01S5/1085 ,  H01S5/183 ,  H01S5/4056

    摘要： A surface emitting semiconductor laser includes a first semiconductor layer sequence, which comprises a pump laser. A second semiconductor layer sequence is arranged on the first semiconductor layer sequence and comprises a vertical emitter. The vertical emitter has a radiation-emitting active layer, a radiation exit side and a connecting side lying opposite the radiation exit side. The pump laser is arranged at the radiation exit side of the vertical emitter and a carrier body is arranged at the connecting side of the vertical emitter. Furthermore, a method for producing a surface emitting semiconductor laser is specified.

    摘要翻译： 表面发射半导体激光器包括包括泵浦激光器的第一半导体层序列。 第二半导体层序列被布置在第一半导体层序列上并且包括垂直发射极。 垂直发射器具有辐射发射有源层，辐射出射侧和与辐射出口侧相对的连接侧。 泵浦激光器布置在垂直发射器的辐射出口侧，并且载体主体布置在垂直发射器的连接侧。 此外，规定了表面发射半导体激光器的制造方法。

    OPTOELECTRONIC COMPONENT
    38.
    发明申请
    OPTOELECTRONIC COMPONENT 有权
    光电组件

    公开(公告)号：US20110188529A1

    公开(公告)日：2011-08-04

    申请号：US13120752

    申请日：2009-08-31

    申请人： Stefan Illek

    发明人： Stefan Illek

    IPC分类号： H01S5/34 ,  H01S5/183 ,  H01S5/04 ,  H01L33/60

    CPC分类号： H01S5/183 ,  H01L2224/48463 ,  H01S5/0071 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/02272 ,  H01S5/041 ,  H01S5/14 ,  H01S5/18 ,  H01S5/4031

    摘要： An optoelectronic component includes an optical pump device including a first radiation-generating layer and a first radiation exit area at a top side of the pump device, wherein electromagnetic radiation generated during operation of the pump device is coupled out from the pump device through the first radiation exit area transversely and at least in part non-perpendicularly with respect to the first radiation-generating layer, and a surface emitting semiconductor laser chip including a reflective layer sequence including a Bragg mirror, and a second radiation-generating layer, wherein the surface emitting semiconductor laser chip is fixed to the top side of the pump device, and the reflective layer sequence is arranged between the first radiation exit area and the second radiation-generating layer.

    摘要翻译： 光电子部件包括光泵装置，其包括位于泵装置顶侧的第一辐射产生层和第一辐射出口区域，其中在泵装置操作期间产生的电磁辐射通过第一 横向且至少部分地相对于第一辐射产生层非垂直的辐射出射面以及包括布拉格反射镜和第二辐射产生层的反射层序列的表面发射半导体激光器芯片，其中表面 发射半导体激光器芯片固定在泵装置的顶侧，并且反射层序列被布置在第一辐射出射区域和第二辐射产生层之间。

    Surface Emitting Semiconductor Laser and Method for Producing It
    39.
    发明申请
    Surface Emitting Semiconductor Laser and Method for Producing It 有权
    表面发射半导体激光器及其制作方法

    公开(公告)号：US20100309944A1

    公开(公告)日：2010-12-09

    申请号：US12808979

    申请日：2008-12-10

    申请人： Stefan Illek

    发明人： Stefan Illek

    IPC分类号： H01S5/183 ,  H01L21/18

    CPC分类号： H01S5/026 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/041 ,  H01S5/0425 ,  H01S5/1071 ,  H01S5/1085 ,  H01S5/183 ,  H01S5/4056

    摘要： A surface emitting semiconductor laser includes a first semiconductor layer sequence, which comprises a pump laser. A second semiconductor layer sequence is arranged on the first semiconductor layer sequence and comprises a vertical emitter. The vertical emitter has a radiation-emitting active layer, a radiation exit side and a connecting side lying opposite the radiation exit side. The pump laser is arranged at the radiation exit side of the vertical emitter and a carrier body is arranged at the connecting side of the vertical emitter. Furthermore, a method for producing a surface emitting semiconductor laser is specified.

    摘要翻译： 表面发射半导体激光器包括包括泵浦激光器的第一半导体层序列。 第二半导体层序列被布置在第一半导体层序列上并且包括垂直发射极。 垂直发射器具有辐射发射有源层，辐射出射侧和与辐射出口侧相对的连接侧。 泵浦激光器布置在垂直发射器的辐射出口侧，并且载体主体布置在垂直发射器的连接侧。 此外，规定了表面发射半导体激光器的制造方法。

    Semicoductor chip and method for production thereof
    40.
    发明授权
    Semicoductor chip and method for production thereof 有权
    半导体芯片及其制造方法

    公开(公告)号：US07678591B2

    公开(公告)日：2010-03-16

    申请号：US10344804

    申请日：2001-07-18

    申请人： Stefan Illek

    发明人： Stefan Illek

    IPC分类号： H01L33/00

    CPC分类号： H01L33/38 ,  H01L33/0079 ,  H01L2221/68368 ,  H01L2933/0016

    摘要： For producing semiconductor chips by thin-film technology, an active layer (2) that has been grown on a substrate, with contact layers on the back side that have a base layer (3), is reinforced by a reinforcement layer (4). Next, an auxiliary carrier layer (5) is applied, which makes the further processing of the active layer (2) possible. The reinforcement layer (4) and the auxiliary carrier layer (5) replace the mechanical carriers used in conventional methods.

    摘要翻译： 为了通过薄膜技术制造半导体芯片，已经在衬底上生长的具有基底层（3）的背侧上的接触层的活性层（2）被加强层（4）加强。 接下来，施加辅助载体层（5），这使得有源层（2）的进一步处理成为可能。 加强层（4）和辅助载体层（5）代替常规方法中使用的机械载体。