公开(公告)号：US20110136347A1

公开(公告)日：2011-06-09

申请号：US12901979

申请日：2010-10-11

申请人： Nicolay Y. Kovarsky ,  Dmitry Lubomirsky

发明人： Nicolay Y. Kovarsky ,  Dmitry Lubomirsky

IPC分类号： H01L21/30 ,  C23C16/30 ,  C23C16/40 ,  C23C16/44

CPC分类号： H01L21/02274 ,  C01B21/087 ,  C23C16/4488 ,  H01L21/0217 ,  H01L21/02222

摘要： The production and delivery of a reaction precursor containing one or more silylamines near a point of use is described. Silylamines may include trisilylamine (TSA) but also disilylamine (DSA) and monosilylamine (MSA). Mixtures involving two or more silylamines can change composition (e.g. proportion of DSA to TSA) over time. Producing silylamines near a point-of-use limits changing composition, reduces handling of unstable gases and reduces cost of silylamine-consuming processes.

摘要翻译： 描述了在使用点附近含有一种或多种甲硅烷基胺的反应前体的生产和递送。 甲硅烷基胺可以包括三甲硅烷胺（TSA），也可以包括二甲苯胺（DSA）和单甲胺（MSA）。 涉及两种或多种甲硅烷基胺的混合物可随时间改变组成（例如DSA与TSA的比例）。 在使用点附近生产甲硅烷基胺限制了组合变化，减少了不稳定气体的处理，并降低了甲胺胺消耗过程的成本。

公开(公告)号：US07848076B2

公开(公告)日：2010-12-07

申请号：US11888311

申请日：2007-07-31

申请人： Kadthala Ramaya Narendranath ,  Dmitry Lubomirsky ,  Xinglong Chen ,  Sudhir Goodhalekar ,  Muhammad Rasheed ,  Tony Kaushal

发明人： Kadthala Ramaya Narendranath ,  Dmitry Lubomirsky ,  Xinglong Chen ,  Sudhir Goodhalekar ,  Muhammad Rasheed ,  Tony Kaushal

IPC分类号： H01L21/683

CPC分类号： H01L21/6831 ,  H01L21/6833 ,  Y10T279/23

摘要： A method and apparatus for providing a fluid distribution element for an electrostatic chuck that reduces plasma formation and arcing within heat transfer fluid passages. One embodiment comprises a plate and a dielectric component, where the dielectric component is inserted into the plate. The plate is adapted to be positioned within a channel to define a plenum, wherein the dielectric component provides at least a portion of a fluid passage coupled to the plenum. A porous dielectric layer, formed upon the dielectric component, provides at least another portion of a fluid passage coupled to the plenum. In other embodiments, the fluid distribution element comprises various arrangements of components to define a fluid passage that does not provide a line-of-sight path from the support surface for a substrate to a plenum.

摘要翻译： 一种用于提供用于静电卡盘的流体分配元件的方法和装置，其减少了传热流体通道内的等离子体形成和电弧。 一个实施例包括板和电介质部件，其中介电部件插入板中。 板适于被定位在通道内以限定通风室，其中介电部件提供耦合到集气室的流体通道的至少一部分。 形成在电介质部件上的多孔介电层提供至少另一部分与气室相连的流体通道。 在其他实施例中，流体分配元件包括各种组件的布置，以限定流体通道，该流体通道不提供从用于基底的支撑表面到气室的视线路径。

公开(公告)号：US07827930B2

公开(公告)日：2010-11-09

申请号：US11043442

申请日：2005-01-26

申请人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Russell Ellwanger ,  Ian A. Pancham ,  Ramakrishna Cheboli ,  Timothy W. Weidman

发明人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Russell Ellwanger ,  Ian A. Pancham ,  Ramakrishna Cheboli ,  Timothy W. Weidman

IPC分类号： B05C3/02

CPC分类号： H01L21/67155 ,  C23C18/1628 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/6723

摘要： An electroless deposition system is provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate transfer shuttle positioned to transfer substrates between the first and second processing stations. The system also includes a substrate transfer robot positioned on the mainframe and configured to access an interior of the processing enclosure. The system also includes a substrate a fluid delivery system that is configured to deliver a processing fluid by use of a spraying process to a substrate mounted in the processing enclosure.

摘要翻译： 提供无电沉积系统。 该系统包括处理主机，位于主机上的至少一个基板清洗台和位于主机上的无电沉积站。 无电沉积站包括环境受控的处理外壳，被配置为清洁和激活基板的表面的第一处理站，被配置为将层无电沉积到基板的表面上的第二处理站，以及位于 在第一和第二处理站之间传送衬底。 该系统还包括位于主机上并被配置为访问处理外壳内部的基板传送机器人。 该系统还包括一个流体输送系统，该流体输送系统被配置成通过使用喷射过程将处理流体输送到安装在处理外壳中的基板。

公开(公告)号：US07572647B2

公开(公告)日：2009-08-11

申请号：US11670728

申请日：2007-02-02

申请人： Robert Chen ,  Canfeng Lai ,  Xinglong Chen ,  Weiyi Luo ,  Zhong Qiang Hua ,  Siqing Lu ,  Muhammad Rasheed ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Ellie Y. Yieh

发明人： Robert Chen ,  Canfeng Lai ,  Xinglong Chen ,  Weiyi Luo ,  Zhong Qiang Hua ,  Siqing Lu ,  Muhammad Rasheed ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Ellie Y. Yieh

IPC分类号： H01L21/00

CPC分类号： C23C16/507 ,  H01J37/321 ,  H01J37/32174 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31604 ,  H01L21/31608

摘要： A coil is provided for use in a semiconductor processing system to generate a plasma with a magnetic field in a chamber. The coil comprises a first coil segment, a second coil segment and an internal balance capacitor. The first coils segment has a first end and a second end. The first end of the coil segment is adapted to connect to a power source. The second coil segment has a first and second end. The second end of the first coil segment is adapted to connect to an external balance capacitor. The internal balance capacitor is connected in series between the second end of the first coil segment and the first end of the second coil segment. The internal balance capacitor and the coil segments are adapted to provide a voltage peak along the first coil segment substantially aligned with a virtual ground along the second coil segment.

摘要翻译： 提供一种用于半导体处理系统中的线圈以在腔室中产生具有磁场的等离子体。 线圈包括第一线圈段，第二线圈段和内部平衡电容器。 第一线圈段具有第一端和第二端。 线圈段的第一端适于连接到电源。 第二线圈段具有第一和第二端。 第一线圈段的第二端适于连接到外部平衡电容器。 内部平衡电容器串联连接在第一线圈段的第二端和第二线圈段的第一端之间。 内部平衡电容器和线圈段适于沿着第一线圈段提供基本上与第二线圈段的虚拟接地对准的电压峰值。

公开(公告)号：US20090120368A1

公开(公告)日：2009-05-14

申请号：US12111817

申请日：2008-04-29

申请人： Dmitry Lubomirsky ,  Kirby H. Floyd

发明人： Dmitry Lubomirsky ,  Kirby H. Floyd

IPC分类号： C23C16/00

CPC分类号： H01L21/68785 ,  C23C16/4409 ,  C23C16/45574 ,  C23C16/4584 ,  C23C16/463 ,  H01L21/68792

摘要： Substrate processing systems are described. The systems may include a processing chamber, and a substrate support assembly at least partially disposed within the chamber. The substrate support assembly is rotatable by a motor yet still allows electricity, cooling fluids, gases and vacuum to be transferred from a non-rotating source outside the processing chamber to the rotatable substrate support assembly inside the processing chamber. Cooling fluids and electrical connections can be used to raise or lower the temperature of a substrate supported by the substrate support assembly. Electrical connections can also be used to electrostatically chuck the wafer to the support assembly. A rotary seal or seals (which may be low friction O-rings) are used to maintain a process pressure while still allowing substrate assembly rotation. Vacuum pumps can be connected to ports which are used to chuck the wafer. The pumps can also be used to differentially pump the region between a pair of rotary seals when two or more rotary seals are present.

摘要翻译： 描述基板处理系统。 系统可以包括处理室和至少部分地设置在室内的衬底支撑组件。 基板支撑组件可通过电动机旋转，但仍然允许电，冷却流体，气体和真空从处理室外的非旋转源转移到处理室内部的可旋转基板支撑组件。 可以使用冷却流体和电连接来提高或降低由基板支撑组件支撑的基板的温度。 也可以使用电气连接来将晶片静电吸附到支撑组件上。 使用旋转密封件或密封件（其可以是低摩擦O形环）来保持工艺压力，同时仍允许基板组件旋转。 真空泵可以连接到用于夹紧晶片的端口。 当存在两个或多个旋转密封件时，泵还可以用于差异地泵送一对旋转密封件之间的区域。

公开(公告)号：US20090031955A1

公开(公告)日：2009-02-05

申请号：US11830589

申请日：2007-07-30

申请人： Siqing Lu ,  Balaji Chandrasekaran ,  Paul Edward Gee ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Zheng Yuan ,  Ellie Y. Yieh

发明人： Siqing Lu ,  Balaji Chandrasekaran ,  Paul Edward Gee ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Zheng Yuan ,  Ellie Y. Yieh

IPC分类号： C23C16/00 ,  B23B31/30

CPC分类号： C23C16/4586 ,  C23C16/4584 ,  Y10T279/11

摘要： Embodiments of a vacuum chuck having an axisymmetrical and/or more uniform thermal profile are provided herein. In some embodiments, a vacuum chuck includes a body having a support surface for supporting a substrate thereupon; a plurality of axisymmetrically arranged grooves formed in the support surface, at least some of the grooves intersecting; and a plurality of chucking holes formed through the body and within the grooves, the chucking holes for fluidly coupling the grooves to a vacuum source during operation, wherein the chucking holes are disposed in non-intersecting portions of the grooves.

摘要翻译： 具有轴对称和/或更均匀的热分布的真空吸盘的实施例在此提供。 在一些实施例中，真空卡盘包括具有用于支撑基板的支撑表面的主体; 形成在支撑表面中的多个轴对称布置的槽，至少一些槽相交; 以及在所述槽内形成的多个夹持孔，所述夹持孔用于在操作期间将所述槽流体耦合到真空源，其中所述夹紧孔设置在所述槽的非交叉部分中。

公开(公告)号：US07341633B2

公开(公告)日：2008-03-11

申请号：US10965220

申请日：2004-10-14

申请人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Ian A. Pancham ,  Sergey Lopatin

发明人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Ian A. Pancham ,  Sergey Lopatin

IPC分类号： B05C3/09 ,  B05C13/02

CPC分类号： H01L21/76838 ,  C23C18/1601 ,  C23C18/1619 ,  C23C18/1628 ,  C23C18/1678 ,  C23C18/1682 ,  C23C18/1872 ,  C23C18/28 ,  H01L21/288 ,  Y10S134/902

摘要： Embodiments of the invention generally provide a fluid processing platform. The platform includes a mainframe having a substrate transfer robot, at least one substrate cleaning cell on the mainframe, and at least one processing enclosure. The processing enclosure includes a gas supply positioned in fluid communication with an interior of the processing enclosure, a first fluid processing cell positioned in the enclosure, a first substrate head assembly positioned to support a substrate for processing in the first fluid processing cell, a second fluid processing cell positioned in the enclosure, a second head assembly positioned to support a substrate for processing in the second fluid processing cell, and a substrate shuttle positioned between the first and second fluid processing cells and being configured to transfer substrates between the fluid processing cells and the mainframe robot.

摘要翻译： 本发明的实施例通常提供流体处理平台。 平台包括具有基板传送机器人的主机，主机上的至少一个基板清洁单元，以及至少一个处理机壳。 处理外壳包括定位成与处理外壳的内部流体连通的气体供应源，位于外壳中的第一流体处理单元，定位成支撑基板以在第一流体处理单元中进行处理的第一基板头组件，第二流体处理单元 位于外壳中的流体处理单元，定位成支撑用于在第二流体处理单元中进行处理的基板的第二头部组件，以及位于第一和第二流体处理单元之间的衬底梭，并且构造成将衬底在流体处理单元 和主机机器人。

公开(公告)号：US20070298585A1

公开(公告)日：2007-12-27

申请号：US11765944

申请日：2007-06-20

申请人： Dmitry Lubomirsky ,  Srinivas Nemani ,  Ellie Yieh

发明人： Dmitry Lubomirsky ,  Srinivas Nemani ,  Ellie Yieh

IPC分类号： H01L21/76

CPC分类号： H01L21/76229

摘要： Methods to reduce film cracking in a dielectric layer are described. The methods may include the steps of depositing a first dielectric film on a substrate and removing a top portion of the first dielectric film by performing an etch on the film. The methods may also include depositing a second dielectric film over the etched first film, and removing a top portion of the second dielectric film. In addition, the methods may include annealing the first and second dielectric films to form the dielectric layer, where the removal of the top portions from the first and the second dielectric films reduces a stress level in the dielectric layer.

摘要翻译： 描述了减少电介质层中的膜破裂的方法。 所述方法可以包括以下步骤：在衬底上沉积第一电介质膜并通过对膜进行蚀刻来去除第一电介质膜的顶部。 所述方法还可以包括在蚀刻的第一膜上沉积第二电介质膜，以及去除第二电介质膜的顶部。 此外，所述方法可以包括退火第一和第二介电膜以形成电介质层，其中从第一和第二电介质膜去除顶部部分降低了介电层中的应力水平。

公开(公告)号：US20070281106A1

公开(公告)日：2007-12-06

申请号：US11754924

申请日：2007-05-29

申请人： Dmitry Lubomirsky ,  Qiwei Liang ,  Soonam Park ,  Kien Chuc ,  Ellie Yieh

发明人： Dmitry Lubomirsky ,  Qiwei Liang ,  Soonam Park ,  Kien Chuc ,  Ellie Yieh

IPC分类号： H05H1/24

CPC分类号： C23C16/45502 ,  C23C16/401 ,  C23C16/402 ,  C23C16/452 ,  C23C16/45514 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45576 ,  C23C16/45578 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/505 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32724 ,  H01J37/32752 ,  H01J2237/2001 ,  H01J2237/3321 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/76224

摘要： A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system that includes at least one top inlet and a plurality of side inlets. The top inlet may be positioned above the substrate stage and the side inlets may be radially distributed around the substrate stage. The reactive radical precursor may be supplied to the deposition chamber through the top inlet. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.

摘要翻译： 描述了从电介质前体的等离子体在衬底上形成电介质层的系统。 该系统可以包括沉积室，用于保持衬底的沉积室中的衬底台和耦合到沉积室的远程等离子体生成系统，其中等离子体产生系统用于产生具有一个或多个反应性基团的电介质前体 。 该系统还可以包括前体分配系统，其包括至少一个顶部入口和多个侧入口。 顶部入口可以位于衬底台的上方，并且侧入口可以在衬底台周围径向分布。 反应性自由基前体可以通过顶部入口提供给沉积室。 还可以包括原位等离子体产生系统，以从沉积室中提供的电介质前体在沉积室中产生等离子体。

公开(公告)号：US20050284754A1

公开(公告)日：2005-12-29

申请号：US10877137

申请日：2004-06-24

申请人： Harald Herchen ,  Dmitry Lubomirsky ,  Bo Zheng ,  Lily Pang

发明人： Harald Herchen ,  Dmitry Lubomirsky ,  Bo Zheng ,  Lily Pang

IPC分类号： C25D7/12 ,  C25D17/06 ,  H01L21/288

CPC分类号： C25D7/12 ,  C25D17/06 ,  H01L21/2885

摘要： A method and apparatus for an electrochemical processing cell that is configured to minimize bevel and backside deposition. The apparatus includes a contact ring assembly for supporting a substrate, a thrust plate movably positioned to engage a substrate positioned on the contact pins, and a lip seal member positioned to contact the thrust plate and the contact ring to prevent fluid flow therebetween. The lip seal includes a at least one bubble release channel formed therethrough. The method includes positioning an electric field barrier between a backside substrate engaging member and a frontside substrate supporting member to prevent electric field from traveling to the bevel and backside of the substrate. The electric field barrier including at least one bubble release channel formed therethrough.

摘要翻译： 一种用于电化学处理电池的方法和装置，其被配置为最小化斜面和背面沉积。 该装置包括用于支撑基板的接触环组件，可移动地定位成接合位于接触销上的基板的止动板，以及定位成接触推力板和接触环以防止其间流体流动的唇形密封件。 唇形密封件包括通过其形成的至少一个气泡释放通道。 该方法包括在背面基板接合构件和前侧基板支撑构件之间定位电场屏障，以防止电场行进到基板的斜面和背面。 电场屏障包括至少一个通过其形成的气泡释放通道。