公开(公告)号：US10512946B2

公开(公告)日：2019-12-24

申请号：US14844406

申请日：2015-09-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ying-Hsueh Chang Chien ,  Chi-Ming Yang

IPC: B08B3/12 ,  H01L21/67 ,  H01L21/02 ,  C11D11/00 ,  B06B3/00 ,  H01L21/66

Abstract: The present disclosure provides a semiconductor cleaning system. The cleaning system includes a chamber to retain a cleaning solution, and a gigasonic frequency generator. The gigasonic frequency generator is configured to generate an electrical signal corresponding to a range of gigahertz frequencies. A transducer is configured to transform the electrical signal to a mechanical wave of pressure and displacement that propagates through the cleaning solution with oscillations within the range of gigahertz frequencies.

公开(公告)号：US10035929B2

公开(公告)日：2018-07-31

申请号：US15338526

申请日：2016-10-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shu-Hao Huang ,  Horng-Huei Tseng ,  Chi-Ming Yang ,  Jeng-Jyi Hwang

IPC: H01L21/302 ,  C09G1/04 ,  H01L21/306 ,  B24B37/20 ,  H01L21/321

CPC classification number: C09G1/04 ,  B24B37/20 ,  C09G1/02 ,  H01L21/30617 ,  H01L21/30625 ,  H01L21/3212

Abstract: The present disclosure relates to a method of forming a CMP slurry that is free of pH-adjusters (i.e., chemicals added solely for the purpose of adjusting a pH of a CMP slurry), and an associated a pH-adjuster free CMP slurry. In some embodiments, the method is performed by forming a CMP slurry having a first pH value. A desired pH value of the CMP slurry is determined. A chelating agent configured to bond to metallic ions is provided to the CMP slurry. The chelating agent is configured to adjust a pH value of the CMP slurry from the first pH value to the desired pH value. By using the chelating agent to adjust a pH value of the CMP slurry to achieve a desired pH value, the method is able to form a CMP slurry that is free of pH-adjusters, thereby reducing the cost and complexity of the CMP slurry.

公开(公告)号：US10011918B2

公开(公告)日：2018-07-03

申请号：US14581876

申请日：2014-12-23

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ying-Hsueh Changchien ,  Yu-Ming Lee ,  Chi-Ming Yang

IPC: C25D5/00 ,  C25D3/02 ,  C25D21/06 ,  C25D21/02 ,  C25D21/18

CPC classification number: C25D21/06 ,  C25D3/02 ,  C25D5/00 ,  C25D5/003 ,  C25D21/02 ,  C25D21/18

Abstract: An electro-chemical plating process begins with supplying a supercritical fluid into an electroplating solution to be deposited, and a bias is applied between a substrate and an electrode, which is located in the electroplating solution. The substrate is placed into the electroplating solution to deposit a material on the substrate.

公开(公告)号：US09869018B2

公开(公告)日：2018-01-16

申请号：US15138473

申请日：2016-04-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chung-Chieh Lee ,  Chi-Ming Yang ,  Lin-Jung Wu

IPC: C23C16/48 ,  C23C16/448 ,  C23C16/44 ,  C23C16/40

CPC classification number: C23C16/4482 ,  C23C16/405 ,  C23C16/4402

Abstract: A method of solid precursor delivery for a vapor deposition process is provided. In some embodiments, a precursor ampoule is provided including a solid precursor arranged in the precursor ampoule. A solvent is added to the precursor ampoule including one or more ionic liquids to dissolve chemical species of the solid precursor and to form a liquid precursor. A carrier gas is applied into the liquid precursor through an inlet of the precursor ampoule. A gas precursor is generated at an upper region of the precursor ampoule by vaporization of the liquid precursor. The chemical species of the solid precursor are delivered into a vapor deposition chamber by the carrier gas. The chemical species of the solid precursor is deposited onto a substrate within the vapor deposition chamber.

公开(公告)号：US09799530B2

公开(公告)日：2017-10-24

申请号：US14056673

申请日：2013-10-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ying-Hsueh Changchien ,  Yu-Ming Lee ,  Chi-Ming Yang

IPC: H01L21/306 ,  H01L21/67 ,  H01L21/311 ,  H01L21/66

CPC classification number: H01L21/31111

Abstract: A method of selectively removing silicon nitride is provided. The method includes: providing a wafer having silicon nitride on a surface of the wafer; supplying a mixture of phosphoric acid and a silicon-containing material into a process tank, in which the mixture has a predetermined silicon concentration; and submerging the wafer into the mixture within the process tank to remove the silicon nitride. An etching apparatus of selectively removing silicon nitride is also provided.

公开(公告)号：US09741585B1

公开(公告)日：2017-08-22

申请号：US15096381

申请日：2016-04-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chung-Chieh Lee ,  Horng-Huei Tseng ,  Chi-Ming Yang

IPC: H01L21/302 ,  H01L21/311 ,  H01L21/02 ,  H01L21/3115 ,  H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/31133 ,  H01J37/32009 ,  H01J2237/334 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/3065 ,  H01L21/31155

Abstract: A method for removing polymer is provided. An aqueous solution is applied to a semiconductor workpiece with polymer arranged thereon. The aqueous solution comprises an energy receiver configured to generate reactive radicals in response to energy. Energy is applied to the aqueous solution to generate the reactive radicals in the aqueous solution and to remove the polymer. A process tool for generating the reactive radicals is also provided.

公开(公告)号：US09287133B2

公开(公告)日：2016-03-15

申请号：US14202876

申请日：2014-03-10

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ying-Hsueh Changchien ,  Yu-Ming Lee ,  Chi-Ming Yang

IPC: H01L21/311 ,  H01L21/3213 ,  H01L21/033

CPC classification number: H01L21/31111 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/32134 ,  H01L21/6708

Abstract: A method for hard mask layer removal includes dispensing a chemical on a hard mask layer, in which the chemical includes an acidic chemical. The chemical is drained from a chamber after hard mask removal.

Abstract translation: 用于硬掩模层去除的方法包括在硬掩模层上分配化学品，其中化学品包括酸性化学品。 硬膜去除后，化学物质从室中排出。

公开(公告)号：US09239192B2

公开(公告)日：2016-01-19

申请号：US13771260

申请日：2013-02-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Nai-Han Cheng ,  Chi-Ming Yang

IPC: F26B3/30 ,  F26B19/00 ,  F27D11/12 ,  H01L21/67 ,  H01L21/687 ,  F27B17/00 ,  F27D99/00

CPC classification number: F27D11/12 ,  F27B17/0025 ,  F27D99/0006 ,  H01L21/67115 ,  H01L21/68764 ,  H01L21/68771

Abstract: A method and apparatus for rapid thermal heat treatment of semiconductor and other substrates is provided. A number of heat lamps arranged in an array or other configuration produce light and heat radiation. The light and heat radiation is directed through a heat slot that forms a radiation beam of high intensity light and heat. The radiation beam is directed to a platen that includes multiple substrates. The apparatus and method include a controller that controls rotational and translational motion of the platen relative to the heat slot and also controls the power individually and collectively supplied to the heat lamps. A program is executed which maneuvers the platen such that all portions of all substrates receive the desired thermal treatment, i.e. attain a desired temperature for a desired time period.

Abstract translation: 提供了一种用于半导体和其他基板的快速热处理的方法和装置。 排列成阵列或其他结构的多个热灯产生光和热辐射。 光和热辐射被引导通过形成高强度光和热的辐射束的热槽。 辐射束被引导到包括多个基板的压板。 该装置和方法包括一个控制器，该控制器控制压板相对于热槽的旋转和平移运动，并且还分别控制功率并集中供应给加热灯。 执行一个程序，其操纵压盘，使得所有基板的所有部分都接受所需的热处理，即在期望的时间段内达到所需温度。

公开(公告)号：US20130171746A1

公开(公告)日：2013-07-04

申请号：US13777212

申请日：2013-02-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Lin Chang ,  Hsin-Hsien Wu ,  Zin-Chang Wei ,  Chi-Ming Yang ,  Chyi-Shyuan Chern ,  Jun-Lin Yeh ,  Jih-Jse Lin ,  Jo-Fei Wang ,  Ming-Yu Fan ,  Jong-I Mou

IPC: H01L21/66

CPC classification number: H01L22/20 ,  H01L21/67248 ,  H01L21/67253 ,  H01L22/12

Abstract: An apparatus and a method for controlling critical dimension (CD) of a circuit is provided. An apparatus includes a controller for receiving CD measurements at respective locations in a circuit pattern in an etched film on a first substrate and a single wafer chamber for forming a second film of the film material on a second substrate. The single wafer chamber is responsive to a signal from the controller to locally adjust a thickness of the second film based on the measured CD's. A method provides for etching a circuit pattern of a film on a first substrate, measuring CD's of the circuit pattern, adjusting a single wafer chamber to form a second film on a second semiconductor substrate based on the measured CD. The second film thickness is locally adjusted based on the measured CD's.

公开(公告)号：US12271113B2

公开(公告)日：2025-04-08

申请号：US17150389

申请日：2021-01-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chih-Cheng Liu ,  Yi-Chen Kuo ,  Jia-Lin Wei ,  Ming-Hui Weng ,  Yen-Yu Chen ,  Jr-Hung Li ,  Yahru Cheng ,  Chi-Ming Yang ,  Tze-Liang Lee ,  Ching-Yu Chang

IPC: G03F7/16 ,  G03F7/11 ,  H01L21/027 ,  G03F7/20

Abstract: Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Forming photoresist layer includes combining first precursor and second precursor in vapor state to form photoresist material, wherein first precursor is organometallic having formula: MaRbXc, where M at least one of Sn, Bi, Sb, In, Te, Ti, Zr, Hf, V, Co, Mo, W, Al, Ga, Si, Ge, P, As, Y, La, Ce, Lu; R is substituted or unsubstituted alkyl, alkenyl, carboxylate group; X is halide or sulfonate group; and 1≤a≤2, b≥1, c≥1, and b+c≤5. Second precursor is at least one of an amine, a borane, a phosphine. Forming photoresist layer includes depositing photoresist material over the substrate. The photoresist layer is selectively exposed to actinic radiation to form latent pattern, and the latent pattern is developed by applying developer to selectively exposed photoresist layer to form pattern.