公开(公告)号：US20240258261A1

公开(公告)日：2024-08-01

申请号：US18629641

申请日：2024-04-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Chiang Ting ,  Chi-Hsi Wu ,  Shang-Yun Hou ,  Tu-Hao Yu ,  Chia-Hao Hsu ,  Ting-Yu Yeh

IPC: H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L23/31 ,  H01L23/498 ,  H01L23/538 ,  H01L25/00 ,  H01L25/18

CPC classification number: H01L24/24 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/561 ,  H01L21/6835 ,  H01L23/49816 ,  H01L23/5383 ,  H01L23/5385 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/08 ,  H01L24/19 ,  H01L24/25 ,  H01L24/32 ,  H01L24/73 ,  H01L25/18 ,  H01L25/50 ,  H01L21/563 ,  H01L23/3128 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/08145 ,  H01L2224/08235 ,  H01L2224/08265 ,  H01L2224/24011 ,  H01L2224/24137 ,  H01L2224/24146 ,  H01L2224/25171 ,  H01L2224/32227 ,  H01L2224/73267 ,  H01L2224/83001

Abstract: A method includes bonding a first device die and a second device die to an interconnect die. The interconnect die includes a first portion over and bonded to the first device die, and a second portion over and bonded to the second device die. The interconnect die electrically connects the first device die to the second device die. The method further includes encapsulating the interconnect die in an encapsulating material, and forming a plurality of redistribution lines over the interconnect die.

公开(公告)号：US12027455B2

公开(公告)日：2024-07-02

申请号：US17852961

申请日：2022-06-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Weiming Chris Chen ,  Kuo-Chiang Ting ,  Shang-Yun Hou

IPC: H01L23/498 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/538

CPC classification number: H01L23/49861 ,  H01L21/486 ,  H01L21/56 ,  H01L23/3121 ,  H01L23/5384

Abstract: A method of forming a semiconductor structure includes bonding a first die and a second die to a first side of a first interposer and to a first side of a second interposer, respectively, where the first interposer is laterally adjacent to the second interposer; encapsulating the first interposer and the second interposer with a first molding material; forming a first recess in a second side of the first interposer opposing the first side of the first interposer; forming a second recess in a second side of the second interposer opposing the first side of the second interposer; and filling the first recess and the second recess with a first dielectric material.

公开(公告)号：US11978714B2

公开(公告)日：2024-05-07

申请号：US18068064

申请日：2022-12-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Chiang Ting ,  Chi-Hsi Wu ,  Shang-Yun Hou ,  Tu-Hao Yu ,  Chia-Hao Hsu ,  Ting-Yu Yeh

IPC: H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L23/31 ,  H01L23/498 ,  H01L23/538 ,  H01L25/00 ,  H01L25/18

CPC classification number: H01L24/24 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/561 ,  H01L21/6835 ,  H01L23/49816 ,  H01L23/5383 ,  H01L23/5385 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/08 ,  H01L24/19 ,  H01L24/25 ,  H01L24/32 ,  H01L24/73 ,  H01L25/18 ,  H01L25/50 ,  H01L21/563 ,  H01L23/3128 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/08145 ,  H01L2224/08235 ,  H01L2224/08265 ,  H01L2224/24011 ,  H01L2224/24137 ,  H01L2224/24146 ,  H01L2224/25171 ,  H01L2224/32227 ,  H01L2224/73267 ,  H01L2224/83001

Abstract: A method includes bonding a first device die and a second device die to an interconnect die. The interconnect die includes a first portion over and bonded to the first device die, and a second portion over and bonded to the second device die. The interconnect die electrically connects the first device die to the second device die. The method further includes encapsulating the interconnect die in an encapsulating material, and forming a plurality of redistribution lines over the interconnect die.

公开(公告)号：US20240063177A1

公开(公告)日：2024-02-22

申请号：US18499920

申请日：2023-11-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jiun Yi Wu ,  Chen-Hua Yu ,  Shang-Yun Hou

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/498

CPC classification number: H01L24/97 ,  H01L23/3114 ,  H01L23/49861 ,  H01L23/49827 ,  H01L2224/82896 ,  H01L2224/80895

Abstract: A semiconductor device includes a first Chip-On-Wafer (CoW) device having a first interposer and a first die attached to a first side of the first interposer; a second CoW device having a second interposer and a second die attached to a first side of the second interposer, the second interposer being laterally spaced apart from the first interposer; and a redistribution structure extending along a second side of the first interposer opposing the first side of the first interposer and extending along a second side of the second interposer opposing the first side of the second interposer, the redistribution structure extending continuously from the first CoW device to the second CoW device.

公开(公告)号：US20230350142A1

公开(公告)日：2023-11-02

申请号：US18347188

申请日：2023-07-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Hua Yu ,  Hsing-Kuo Hsia ,  Sung-Hui Huang ,  Kuan-Yu Huang ,  Kuo-Chiang Ting ,  Shang-Yun Hou ,  Chi-Hsi Wu

IPC: G02B6/42 ,  H01L23/00

CPC classification number: G02B6/4255 ,  H01L24/16 ,  H01L24/81 ,  G02B6/4246 ,  G02B6/4243 ,  H01L2224/81815 ,  H01L2224/16148 ,  H01L23/481

Abstract: A structure including a photonic integrated circuit die, an electric integrated circuit die, a semiconductor dam, and an insulating encapsulant is provided. The photonic integrated circuit die includes an optical input/output portion and a groove located in proximity of the optical input/output portion, wherein the groove is adapted for lateral insertion of at least one optical fiber. The electric integrated circuit die is disposed over and electrically connected to the photonic integrated circuit die. The semiconductor dam is disposed over the photonic integrated circuit die. The insulating encapsulant is disposed over the photonic integrated circuit die and laterally encapsulates the electric integrated circuit die and the semiconductor dam.

公开(公告)号：US20230307427A1

公开(公告)日：2023-09-28

申请号：US17806329

申请日：2022-06-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Chi Lin ,  Hao-Cheng Hou ,  Tsung-Ding Wang ,  Chien-Hsun Lee ,  Shang-Yun Hou

IPC: H01L23/31 ,  H01L23/00 ,  H01L23/498 ,  H01L25/18 ,  H01L23/538 ,  H01L21/48 ,  H01L25/10 ,  H01L25/00

CPC classification number: H01L25/105 ,  H01L21/4857 ,  H01L23/3121 ,  H01L23/49822 ,  H01L23/5381 ,  H01L23/5385 ,  H01L24/24 ,  H01L25/18 ,  H01L25/50 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/13025 ,  H01L2224/16227 ,  H01L2224/24227 ,  H01L2224/244 ,  H01L2224/25174 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2225/1035 ,  H01L2225/1058

Abstract: A method includes forming a build-up package substrate, which includes forming a first plurality of redistribution lines (RDLs) and a second plurality of RDLs, forming a first plurality of through-vias on the first plurality of RDLs, bonding an interconnect die to the second plurality of RDLs, encapsulating the interconnect die and the first plurality of through-vias in a first encapsulant, and forming a third plurality of RDLs over the first encapsulant. The third plurality of RDLs are electrically connected to the first plurality of through-vias. An organic package substrate is bonded to the build-up package substrate. The build-up package substrate and the organic package substrate in combination form a compound organic package substrate. A first package component and a second package component are bonded to the compound organic package substrate, and are electrically interconnected through the interconnect die.

公开(公告)号：US11728254B2

公开(公告)日：2023-08-15

申请号：US16881211

申请日：2020-05-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shang-Yun Hou ,  Hsien-Pin Hu ,  Sao-Ling Chiu ,  Wen-Hsin Wei ,  Ping-Kang Huang ,  Chih-Ta Shen ,  Szu-Wei Lu ,  Ying-Ching Shih ,  Wen-Chih Chiou ,  Chi-Hsi Wu ,  Chen-Hua Yu

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/31 ,  H01L21/56 ,  H01L21/48 ,  H01L23/538

CPC classification number: H01L23/49816 ,  H01L21/4853 ,  H01L21/56 ,  H01L23/3121 ,  H01L23/49861 ,  H01L24/13 ,  H01L23/5385 ,  H01L2224/023 ,  H01L2225/107

Abstract: A semiconductor structure includes a first interposer; a second interposer laterally adjacent to the first interposer, where the second interposer is spaced apart from the first interposer; and a first die attached to a first side of the first interposer and attached to a first side of the second interposer, where the first side of the first interposer and the first side of the second interposer face the first die.

公开(公告)号：US11682593B2

公开(公告)日：2023-06-20

申请号：US16932948

申请日：2020-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tzuan-Horng Liu ,  Chen-Hua Yu ,  Hsien-Pin Hu ,  Tzu-Yu Wang ,  Wei-Cheng Wu ,  Shang-Yun Hou ,  Shin-Puu Jeng

IPC: H01L21/48 ,  H01L21/66 ,  H01L23/498 ,  G01R1/073 ,  H01L23/522 ,  H01L23/58 ,  H01L21/56 ,  H01L21/683

CPC classification number: H01L22/32 ,  G01R1/07378 ,  H01L21/486 ,  H01L21/4853 ,  H01L22/30 ,  H01L22/34 ,  H01L23/49811 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/5226 ,  H01L23/585 ,  H01L21/561 ,  H01L21/6835 ,  H01L2221/68331 ,  H01L2224/05001 ,  H01L2224/056 ,  H01L2224/05026 ,  H01L2224/05572 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/73204 ,  H01L2224/81192 ,  H01L2224/81815 ,  H01L2224/97 ,  H01L2924/01322 ,  H01L2924/15311 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2224/97 ,  H01L2224/81 ,  H01L2924/01322 ,  H01L2924/00 ,  H01L2224/056 ,  H01L2924/00014 ,  H01L2224/05124 ,  H01L2924/00014 ,  H01L2224/05147 ,  H01L2924/00014

Abstract: An embodiment of the disclosure is a structure comprising an interposer. The interposer has a test structure extending along a periphery of the interposer, and at least a portion of the test structure is in a first redistribution element. The first redistribution element is on a first surface of a substrate of the interposer. The test structure is intermediate and electrically coupled to at least two probe pads.

公开(公告)号：US20230124804A1

公开(公告)日：2023-04-20

申请号：US18068064

申请日：2022-12-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Chiang Ting ,  Chi-Hsi Wu ,  Shang-Yun Hou ,  Tu-Hao Yu ,  Chia-Hao Hsu ,  Ting-Yu Yeh

IPC: H01L23/00 ,  H01L21/56 ,  H01L21/683 ,  H01L21/48 ,  H01L23/498 ,  H01L23/538 ,  H01L25/18 ,  H01L25/00

Abstract: A method includes bonding a first device die and a second device die to an interconnect die. The interconnect die includes a first portion over and bonded to the first device die, and a second portion over and bonded to the second device die. The interconnect die electrically connects the first device die to the second device die. The method further includes encapsulating the interconnect die in an encapsulating material, and forming a plurality of redistribution lines over the interconnect die.

公开(公告)号：US11569172B2

公开(公告)日：2023-01-31

申请号：US16887458

申请日：2020-05-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shang-Yun Hou ,  Hsien-Pin Hu

IPC: H01L23/48 ,  H01L23/538 ,  H01L23/498 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31

Abstract: Semiconductor devices and methods of manufacture are provided. In embodiments the semiconductor device includes a substrate, a first interposer bonded to the substrate, a second interposer bonded to the substrate, a bridge component electrically connecting the first interposer to the second interposer, two or more first dies bonded to the first interposer; and two or more second dies bonded to the second interposer.