公开(公告)号：US20060021646A1

公开(公告)日：2006-02-02

申请号：US11194685

申请日：2005-08-02

申请人： Satoshi Yotsuhashi ,  Tsutomu Kanno ,  Hideaki Adachi ,  Akihiro Odagawa ,  Yasunari Sugita

发明人： Satoshi Yotsuhashi ,  Tsutomu Kanno ,  Hideaki Adachi ,  Akihiro Odagawa ,  Yasunari Sugita

IPC分类号： H01L35/12 ,  H01L35/28

CPC分类号： H01L35/34 ,  H01L35/22

摘要： The present invention provides a thermoelectric conversion device having high thermoelectric conversion performance. In this device, electrodes are arranged so that electric current flows in an interlayer direction of a layered substance, unlike the arrangements derived from common knowledge in the art. In the thermoelectric conversion device according to the present invention, a thermoelectric-conversion film is obtained through epitaxial growth and formed by arranging an electrically conducting layer and an electrically insulating layer alternately; the electrically conducting layer has an octahedral crystal structure in which a transition metal atom M is positioned at its center and oxygen atoms are positioned at its vertexes; and the electrically insulating layer includes a metal element or a crystalline metal oxide. The c axis of the layered substance made of the electrically conducting layer and the electrically insulating layer is parallel to an in-plane direction of the substrate, and a pair of electrodes are arranged so that electric current flows along the c axis.

摘要翻译： 本发明提供一种具有高热电转换性能的热电转换装置。 在该装置中，不同于本领域的普通知识的结构，电极被布置成电流沿分层物质的层间方向流动。 在根据本发明的热电转换装置中，通过外延生长获得热电转换膜，并且通过交替地布置导电层和电绝缘层而形成; 导电层具有八面体晶体结构，其中过渡金属原子M位于其中心，氧原子位于其顶点; 并且电绝缘层包括金属元素或结晶金属氧化物。 由导电层和电绝缘层制成的层状物质的c轴平行于衬底的面内方向，并且一对电极被布置成使得电流沿c轴流动。

公开(公告)号：US20050135020A1

公开(公告)日：2005-06-23

申请号：US11060028

申请日：2005-02-16

申请人： Yasunari Sugita ,  Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Mitsuo Satomi ,  Yoshio Kawashima ,  Akihiro Odagawa

发明人： Yasunari Sugita ,  Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Mitsuo Satomi ,  Yoshio Kawashima ,  Akihiro Odagawa

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/14 ,  H01F10/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  H01L43/10 ,  G11B5/33 ,  G11B5/127

CPC分类号： H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3916 ,  G11B2005/3996 ,  H01F10/3204 ,  H01F10/3231 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3295 ,  Y10T428/115

摘要： The present invention provides a magnetoresistive (MR) element that is excellent in MR ratio and thermal stability and includes at least one magnetic layer including a ferromagnetic material M-X expressed by M100-aXa. Here, M is at least one selected from Fe, Co and Ni, X is expressed by X1bX2c,X3d (X1 is at least one selected from Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt and Au, X2 is at least one selected from Al, Sc, Ti, V, Cr, Mn, Ga, Ge, Y, Zr, Nb, Mo, Hf, Ta, W, Re, Zn and lanthanide series elements, and X3 is at least one selected from Si, B, C, N, O, P and S), and a, b, c and d satisfy 0.05≦a≦60, 0≦b≦60, 0≦c≦30, 0≦d≦20, and a=b+c+d.

摘要翻译： 本发明提供了一种磁阻（MR）元件，它具有优异的MR比和热稳定性，并且包括至少一个包括由M 100-a X表示的铁磁材料MX的磁性层， / SUB>。 这里，M是选自Fe，Co和Ni中的至少一种，X由X 1表示，X 2， X 1，X 3是选自Cu，Ru，Rh，Pd，Ag，Os，Ir中的至少一种 ，Pt和Au，X 2是选自Al，Sc，Ti，V，Cr，Mn，Ga，Ge，Y，Zr，Nb，Mo，Hf，Ta，W中的至少一种， Re，Zn和镧系元素，X 3是选自Si，B，C，N，O，P和S中的至少一种），a，b，c和d满足0.05 < = a <= 60,0 <= b <= 60,0 <= c <= 30,0 <= d <= 20，a = b + c + d。

公开(公告)号：US20050081906A1

公开(公告)日：2005-04-21

申请号：US11002588

申请日：2004-12-03

申请人： Hideaki Adachi ,  Yasunari Sugita ,  Satoshi Yotsuhashi ,  Tsutomu Kanno

发明人： Hideaki Adachi ,  Yasunari Sugita ,  Satoshi Yotsuhashi ,  Tsutomu Kanno

IPC分类号： C04B35/00 ,  C01G31/00 ,  C04B35/495 ,  C04B35/50 ,  H01L35/14 ,  H01L35/16 ,  H01L35/20 ,  H01L35/22 ,  H01L35/34 ,  H02N11/00

CPC分类号： C04B35/495 ,  C01G31/00 ,  C01G31/006 ,  C01P2006/40 ,  C04B35/6262 ,  C04B2235/3201 ,  C04B2235/3203 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3239 ,  C04B2235/3272 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3291 ,  C04B2235/3294 ,  C04B2235/72 ,  C04B2235/76 ,  C04B2235/768 ,  C04B2235/96 ,  H01L35/22

摘要： With conventional thermoelectric conversion materials, their thermoelectric conversion performance has been insufficient, and a problem has been to achieve stable performance in an oxidizing atmosphere and an air atmosphere. In view of this, according to the present invention, a thermoelectric material is made of a complex oxide that has vanadium oxide as its main component and is represented by the general formula AxVOx+1.5+d. Here, A is at least one selected from an alkali element, an alkaline-earth element, and a rare-earth element, x is a numerical value within the range of 0.2 to 2, and d is a non-stoichiometric ratio of oxygen and is a numerical value within the range of from −1 to 1.

摘要翻译： 使用传统的热电转换材料，其热电转换性能不足，并且在氧化气氛和空气气氛中的问题是达到稳定的性能。 鉴于此，根据本发明，热电材料由具有氧化钒作为其主要成分的复合氧化物制成，并且由通式A x X x X + 1.5 + d 。 这里，A为选自碱金属元素，碱土金属元素和稀土元素中的至少一种，x为0.2〜2的数值，d为氧的非化学计量比 是-1〜1范围内的数值。

公开(公告)号：US06861940B2

公开(公告)日：2005-03-01

申请号：US10732053

申请日：2003-12-10

申请人： Nozomu Matsukawa ,  Akihiro Odagawa ,  Yasunari Sugita ,  Mitsuo Satomi ,  Yoshio Kawashima

发明人： Nozomu Matsukawa ,  Akihiro Odagawa ,  Yasunari Sugita ,  Mitsuo Satomi ,  Yoshio Kawashima

IPC分类号： G01R33/09 ,  H01F10/32 ,  H01C7/04

CPC分类号： H01L43/10 ,  B82Y25/00 ,  G01R33/093 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3272

摘要： A magnetoresistive element of the present invention includes a multilayer structure that includes a non-magnetic layer (3) and a pair of ferromagnetic layers (1, 2) stacked on both sides of the non-magnetic layer (3). A resistance value differs depending on a relative angle between the magnetization directions of the ferromagnetic layers (1, 2) at the interfaces with the non-magnetic layer (3). The composition of at least one of the ferromagnetic layers (1, 2) in a range of 2 nm from the interface with the non-magnetic layer (3) is expressed by (MxOy)1-zZz, where Z is at least one element selected from the group consisting of Ru, Os, Rh, Ir, Pd, Pt, Cu, Ag, and Au, M is at least one element selected from the group consisting of elements other than Z and O and includes a ferromagnetic metal, and x, y, and z satisfy 0.33

摘要翻译： 本发明的磁阻元件包括层叠在非磁性层（3）的两侧的非磁性层（3）和一对铁磁体层（1,2）的多层结构体。 电阻值根据与非磁性层（3）的界面处的铁磁层（1,2）的磁化方向之间的相对角度而不同。 从与非磁性层（3）的界面在2nm范围内的铁磁层（1,2）中的至少一个的组成由（M×Oy）1-zZz表示，其中Z是至少一个元素 选自由Ru，Os，Rh，Ir，Pd，Pt，Cu，Ag和Au组成的组中的至少一种元素，M是选自Z和O以外的元素中的至少一种元素，并且包括铁磁性金属，以及 x，y和z满足0.33

公开(公告)号：US06842317B2

公开(公告)日：2005-01-11

申请号：US10692362

申请日：2003-10-22

申请人： Yasunari Sugita ,  Akihiro Odagawa ,  Nozomu Matsukawa

发明人： Yasunari Sugita ,  Akihiro Odagawa ,  Nozomu Matsukawa

IPC分类号： G01R33/09 ,  G11B5/00 ,  G11B5/39 ,  H01F10/32 ,  H01F10/14

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3916 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3254 ,  H01L43/08 ,  H01L43/10

摘要： A magnetoresistive element includes a multilayer film configuration including: a tunnel insulation layer; and a pair of magnetic layers that are laminated with the tunnel insulation layer interposed therebetween. A resistance value of the magnetoresistive element varies with a relative angle between magnetic orientations of both of the magnetic layers, and at least one of the magnetic layers includes a magnetic film having a thermal expansion coefficient not greater than a value obtained by adding 2×10−6/K to a thermal expansion coefficient of the tunnel insulation layer. The thus configured magnetoresistive element can exert excellent thermal stability. The use of such a magnetoresistive element can realize a magnetic head, a magnetic memory element and a magnetic recording apparatus with excellent thermal stability.

摘要翻译： 磁阻元件包括多层膜构造，包括：隧道绝缘层; 以及与隧道绝缘层层叠的一对磁性层。 磁阻元件的电阻值随着两个磁性层的磁取向之间的相对角度而变化，并且至少一个磁性层包括热膨胀系数不大于通过加入2×10 -3 - 6> / K对隧道绝缘层的热膨胀系数。 这样配置的磁阻元件可以发挥优异的热稳定性。 使用这种磁阻元件可以实现具有优异的热稳定性的磁头，磁存储元件和磁记录装置。

公开(公告)号：US07473612B2

公开(公告)日：2009-01-06

申请号：US11417200

申请日：2006-05-04

申请人： Tsutomu Kanno ,  Akihiro Odagawa ,  Yasunari Sugita ,  Akihiro Sakai ,  Hideaki Adachi

发明人： Tsutomu Kanno ,  Akihiro Odagawa ,  Yasunari Sugita ,  Akihiro Sakai ,  Hideaki Adachi

IPC分类号： H01L21/20

CPC分类号： G11C13/0007 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0054 ,  G11C2013/0073 ,  G11C2013/0078 ,  G11C2013/009 ,  G11C2213/31 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/147 ,  H01L45/1625 ,  H01L45/1641 ,  H01L45/1675 ,  H01L45/1683

摘要： A method for fabricating a variable-resistance element, the resistance of a material layer being variable in accordance with an electric current or voltage applied across first and second electrodes, the method including: (1) a first electrode production step; (2) a step of forming the material layer on the first electrode, wherein the material layer comprises an oxide semiconductor having a perovskite structure represented by the chemical formula RMCoO3, wherein R is a rare-earth element and M is an alkaline-earth element; (3) an oxygen treatment step of heating the material layer in an oxygen atmosphere; (4) a step of forming the second electrode on the material layer that was subjected to the oxygen treatment step; and (5) a hydrogen treatment step of heating the material layer in a reducing atmosphere containing hydrogen.

摘要翻译： 一种用于制造可变电阻元件的方法，所述材料层的电阻根据施加在第一和第二电极上的电流或电压而变化，所述方法包括：（1）第一电极制备步骤; （2）在第一电极上形成材料层的步骤，其中所述材料层包括具有由化学式RMCoO 3表示的钙钛矿结构的氧化物半导体，其中R是稀土元素，M是碱土元素 ; （3）在氧气氛中加热材料层的氧处理工序; （4）在进行氧处理工序的材料层上形成第2电极的工序; 和（5）在含氢还原气氛中加热该材料层的氢处理步骤。

公开(公告)号：US07312392B2

公开(公告)日：2007-12-25

申请号：US11194685

申请日：2005-08-02

申请人： Satoshi Yotsuhashi ,  Tsutomu Kanno ,  Hideaki Adachi ,  Akihiro Odagawa ,  Yasunari Sugita

发明人： Satoshi Yotsuhashi ,  Tsutomu Kanno ,  Hideaki Adachi ,  Akihiro Odagawa ,  Yasunari Sugita

IPC分类号： H01L35/22

CPC分类号： H01L35/34 ,  H01L35/22

摘要： The present invention provides a thermoelectric conversion device having high thermoelectric conversion performance. In this device, electrodes are arranged so that electric current flows in an interlayer direction of a layered substance, unlike the arrangements derived from common knowledge in the art. In the thermoelectric conversion device according to the present invention, a thermoelectric-conversion film is obtained through epitaxial growth and formed by arranging an electrically conducting layer and an electrically insulating layer alternately; the electrically conducting layer has an octahedral crystal structure in which a transition metal atom M is positioned at its center and oxygen atoms are positioned at its vertexes; and the electrically insulating layer includes a metal element or a crystalline metal oxide. The c axis of the layered substance made of the electrically conducting layer and the electrically insulating layer is parallel to an in-plane direction of the substrate, and a pair of electrodes are arranged so that electric current flows along the c axis.

摘要翻译： 本发明提供一种具有高热电转换性能的热电转换装置。 在该装置中，不同于本领域的普通知识的结构，电极被布置成电流沿分层物质的层间方向流动。 在根据本发明的热电转换装置中，通过外延生长获得热电转换膜，并且通过交替地布置导电层和电绝缘层而形成; 导电层具有八面体晶体结构，其中过渡金属原子M位于其中心，氧原子位于其顶点; 并且电绝缘层包括金属元素或结晶金属氧化物。 由导电层和电绝缘层制成的层状物质的c轴平行于衬底的面内方向，并且一对电极被布置成使得电流沿c轴流动。

公开(公告)号：US06950333B2

公开(公告)日：2005-09-27

申请号：US10695731

申请日：2003-10-24

申请人： Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Akihiro Odagawa ,  Mitsuo Satomi ,  Yasunari Sugita ,  Yoshio Kawashima

发明人： Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Akihiro Odagawa ,  Mitsuo Satomi ,  Yasunari Sugita ,  Yoshio Kawashima

IPC分类号： G11C11/00 ,  G11C11/15 ,  G11C11/16 ,  G11C11/22 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22

CPC分类号： H01L27/224 ,  B82Y10/00 ,  G11C11/15 ,  G11C11/16 ,  G11C11/5607 ,  H01L27/228

摘要： A magnetic memory of the present invention includes two or more memory layers and two or more tunnel layers that are stacked in the thickness direction of the layers. The two or more memory layers are connected electrically in series. A group of first layers includes at least one layer selected from the two or more memory layers. A group of second layers includes at least one layer selected from the two or more memory layers. A resistance change caused by magnetization reversal in the group of first layers differs from a resistance change caused by magnetization reversal in the group of second layers.

摘要翻译： 本发明的磁存储器包括两层或多层存储层和两层或多层在层的厚度方向上层叠的隧道层。 两个或更多个存储器层串联电连接。 一组第一层包括从两个或更多个存储器层中选择的至少一个层。 一组第二层包括从两个或更多个存储器层中选择的至少一个层。 由第一层组中的磁化反转引起的电阻变化与由第二层组中的磁化反转引起的电阻变化不同。

公开(公告)号：US20050167699A1

公开(公告)日：2005-08-04

申请号：US11061920

申请日：2005-02-22

申请人： Yasunari Sugita ,  Akihiro Odagawa ,  Hideaki Adachi ,  Satoshi Yotsuhashi ,  Tsutomu Kanno ,  Kiyoshi Ohnaka

发明人： Yasunari Sugita ,  Akihiro Odagawa ,  Hideaki Adachi ,  Satoshi Yotsuhashi ,  Tsutomu Kanno ,  Kiyoshi Ohnaka

IPC分类号： G11C11/56 ,  G11C13/00 ,  H01L21/02 ,  H01L27/24 ,  H01L45/00

CPC分类号： G11C13/0007 ,  G11C11/5685 ,  G11C2213/31 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1273 ,  H01L45/147 ,  H01L45/1675

摘要： The present invention lowers a drive voltage of a RRAM, which is a promising low power consumption, high-speed memory and suppresses variations in the width of an electric pulse for realizing a same resistance change. The present invention provides a variable resistance element including: a first electrode; a layer in which its resistance is variable by applying an electric pulse thereto, the layer being formed on the first electrode; and a second electrode formed on the layer; wherein the layer has a perovskite structure; and the layer has at least one selected from depressions and protrusions in an interface with at least one electrode selected from the first electrode and the second electrode.

摘要翻译： 本发明降低了作为有希望的低功耗高速存储器的RRAM的驱动电压，并且抑制了用于实现相同电阻变化的电脉冲宽度的变化。 本发明提供一种可变电阻元件，包括：第一电极; 通过施加电脉冲使其电阻可变的层，所述层形成在第一电极上; 和形成在该层上的第二电极; 其中所述层具有钙钛矿结构; 并且所述层具有从与所述第一电极和所述第二电极中选择的至少一个电极的界面中的凹陷和突起中选择的至少一个。

公开(公告)号：US06839273B2

公开(公告)日：2005-01-04

申请号：US10783286

申请日：2004-02-20

申请人： Akihiro Odagawa ,  Nozomu Matsukawa ,  Yasunari Sugita

发明人： Akihiro Odagawa ,  Nozomu Matsukawa ,  Yasunari Sugita

IPC分类号： G11B5/39 ,  G11C11/15 ,  H01F10/18 ,  H01F10/193 ,  H01L21/8246 ,  H01L27/22 ,  H01L29/82 ,  H01L43/08 ,  G11C11/14

CPC分类号： H01F10/1936 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  G11C11/15 ,  H01F1/405 ,  H01L27/228 ,  H01L29/82 ,  H01L43/08

摘要： A magnetic switching device is provided, which has a configuration different from that of a conventional example and is capable of enhancing an energy conversion efficiency for changing the magnetized state of a magnetic substance. A magnetic memory using the magnetic switching device also is provided The magnetic switching device includes a magnetic layer, a transition layer magnetically coupled to the magnetic layer, and a carrier supplier including at least one selected from metal and a semiconductor. The transition layer and the carrier supplier are placed in such a manner that a voltage can be applied between the transition layer and the carrier supplier. The transition layer undergoes a non-ferromagnetism—ferromagnetism transition by the application of a voltage, and the magnetized state of the magnetic layer is changed by the transition of the transition layer.

摘要翻译： 提供一种磁性开关装置，其具有与常规示例不同的配置，并且能够提高用于改变磁性物质的磁化状态的能量转换效率。 还提供了使用磁开关装置的磁存储器。磁开关装置包括磁性层，磁耦合到磁性层的过渡层和包括从金属和半导体中选择的至少一种的载体供体。 过渡层和载体供给器的放置方式是可以在过渡层和载体供应者之间施加电压。 过渡层通过施加电压而经历非铁磁 - 铁磁转变，并且通过过渡层的转变改变磁性层的磁化状态。