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    WAVELENGTH-CONVERTED SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING A FILTER AND A SCATTERING STRUCTURE
    31.
    发明申请
    WAVELENGTH-CONVERTED SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING A FILTER AND A SCATTERING STRUCTURE 审中-公开
    波长转换半导体发光器件，包括滤光片和散射结构

    公开(公告)号：US20110012147A1

    公开(公告)日：2011-01-20

    申请号：US12503506

    申请日：2009-07-15

    申请人： Serge J. Bierhuizen ,  Michael R. Krames

    发明人： Serge J. Bierhuizen ,  Michael R. Krames

    IPC分类号： H01L33/00

    CPC分类号： H01L33/46 ,  G03B15/05 ,  G03B2215/0567 ,  G03B2215/0592 ,  H01L33/50 ,  H01L2933/0091

    摘要： A semiconductor structure comprises a light emitting layer disposed between an n-type region and a p-type region. A wavelength converting material is disposed over the semiconductor structure. The wavelength converting material is configured to absorb light emitted by the semiconductor structure and emit light of a different wavelength. A filter configured to reflect blue ambient light is disposed over the wavelength converting material. A scattering structure is disposed over the wavelength converting layer. The scattering structure is configured to scatter light. In some embodiments, the scattering structure is a transparent material having a rough surface, containing non-wavelength-converting particles that appear substantially white in ambient light, or including both a rough surface and white particles.

    摘要翻译： 半导体结构包括设置在n型区域和p型区域之间的发光层。 波长转换材料设置在半导体结构上。 波长转换材料被配置为吸收由半导体结构发射的光并发射不同波长的光。 布置成反射蓝色环境光的滤光器设置在波长转换材料上。 散射结构设置在波长转换层上。 散射结构被配置为散射光。 在一些实施例中，散射结构是具有粗糙表面的透明材料，其包含在环境光中基本上呈白色的非波长转换颗粒，或包括粗糙表面和白色颗粒。

    COMPLIANT BONDING STRUCTURES FOR SEMICONDUCTOR DEVICES
    32.
    发明申请
    COMPLIANT BONDING STRUCTURES FOR SEMICONDUCTOR DEVICES 有权
    用于半导体器件的合适的结合结构

    公开(公告)号：US20100224902A1

    公开(公告)日：2010-09-09

    申请号：US12397392

    申请日：2009-03-04

    申请人： John E. Epler ,  Michael R. Krames ,  James G. Neff

    发明人： John E. Epler ,  Michael R. Krames ,  James G. Neff

    IPC分类号： H01L33/00

    CPC分类号： H01L33/38 ,  H01L33/0079 ,  H01L33/62 ,  H01L2224/0401 ,  H01L2224/0603 ,  H01L2224/1403

    摘要： A compliant bonding structure is disposed between a semiconductor light emitting device and a mount. When the semiconductor light emitting device is attached to the mount, for example by providing pressure, heat, and/or ultrasonic energy to the semiconductor light emitting device, the compliant bonding structure collapses to partially fill a space between the semiconductor light emitting device and the mount. In some embodiments, the compliant bonding structure is plurality of metal bumps that undergo plastic deformation during bonding. In some embodiments, the compliant bonding structure is a porous metal layer.

    摘要翻译： 在半导体发光器件和安装件之间设置有兼容的结合结构。 当半导体发光器件例如通过向半导体发光器件提供压力，加热和/或超声能量而将半导体发光器件附接到安装件时，柔性结合结构塌缩以部分地填充半导体发光器件和 安装。 在一些实施例中，柔性接合结构是在接合期间经历塑性变形的多个金属凸块。 在一些实施例中，柔性结合结构是多孔金属层。

    METHODS OF FORMING RELAXED LAYERS OF SEMICONDUCTOR MATERIALS, SEMICONDUCTOR STRUCTURES, DEVICES AND ENGINEERED SUBSTRATES INCLUDING SAME
    33.
    发明申请
    METHODS OF FORMING RELAXED LAYERS OF SEMICONDUCTOR MATERIALS, SEMICONDUCTOR STRUCTURES, DEVICES AND ENGINEERED SUBSTRATES INCLUDING SAME 有权
    形成半导体材料的松散层的方法，半导体结构，器件和包括其中的工程衬底

    公开(公告)号：US20100176490A1

    公开(公告)日：2010-07-15

    申请号：US12563953

    申请日：2009-09-21

    申请人： Fabrice LETERTRE ,  Bruce FAURE ,  Michael R. Krames ,  Nathan F. GARDNER

    发明人： Fabrice LETERTRE ,  Bruce FAURE ,  Michael R. Krames ,  Nathan F. GARDNER

    IPC分类号： H01L29/20 ,  H01L21/20

    CPC分类号： H01L21/02639 ,  H01L21/02367 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254

    摘要： Methods of fabricating relaxed layers of semiconductor materials include forming structures of a semiconductor material overlying a layer of a compliant material, and subsequently altering a viscosity of the compliant material to reduce strain within the semiconductor material. The compliant material may be reflowed during deposition of a second layer of semiconductor material. The compliant material may be selected so that, as the second layer of semiconductor material is deposited, a viscosity of the compliant material is altered imparting relaxation of the structures. In some embodiments, the layer of semiconductor material may comprise a III-V type semiconductor material, such as, for example, indium gallium nitride. Methods of fabricating semiconductor structures and devices are also disclosed. Novel intermediate structures are formed during such methods. Engineered substrates include a plurality of structures comprising a semiconductor material disposed on a layer of material exhibiting a changeable viscosity.

    摘要翻译： 制造半导体材料的松弛层的方法包括形成覆盖柔性材料层的半导体材料的结构，随后改变柔性材料的粘度以减小半导体材料内的应变。 在沉积第二层半导体材料期间，柔性材料可以回流。 可以选择柔性材料，使得当沉积第二层半导体材料时，改变柔性材料的粘度赋予结构松弛性。 在一些实施例中，半导体材料层可以包括III-V型半导体材料，例如氮化铟镓。 还公开了制造半导体结构和器件的方法。 在这种方法中形成了新的中间结构。 工程衬底包括多个结构，其包括设置在表现出可变粘度的材料层上的半导体材料。

    LED with porous diffusing reflector
    35.
    发明授权
    LED with porous diffusing reflector 有权
    LED带多孔漫反射器

    公开(公告)号：US07601989B2

    公开(公告)日：2009-10-13

    申请号：US11692132

    申请日：2007-03-27

    申请人： John E. Epler ,  Hanmin Zhao ,  Michael R. Krames

    发明人： John E. Epler ,  Hanmin Zhao ,  Michael R. Krames

    IPC分类号： H01L33/00

    CPC分类号： H01L33/16 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2933/0091 ,  H01L2924/00

    摘要： In one embodiment, an AlInGaP LED includes a bottom n-type layer, an active layer, a top p-type layer, and a thick n-type GaP layer over the top p-type layer. The thick n-type GaP layer is then subjected to an electrochemical etch process that causes the n-type GaP layer to become porous and light-diffusing. Electrical contact is made to the p-GaP layer under the porous n-GaP layer by providing metal-filled vias through the porous layer, or electrical contact is made through non-porous regions of the GaP layer between porous regions. The LED chip may be mounted on a submount with the porous n-GaP layer facing the submount surface. The pores and metal layer reflect and diffuse the light, which greatly increases the light output of the LED. Other embodiments of the LED structure are described.

    摘要翻译： 在一个实施例中，AlInGaP LED包括顶部p型层上的底部n型层，有源层，顶部p型层和厚n型GaP层。 然后对厚的n型GaP层进行电化学蚀刻工艺，其使得n型GaP层变得多孔和光扩散。 通过提供通过多孔层的金属填充的通孔，在多孔n-GaP层下面的p-GaP层进行电接触，或者通过多孔区域之间的GaP层的无孔区域进行电接触。 LED芯片可以安装在多孔n-GaP层面向底座表面的基座上。 孔和金属层反射和扩散光，这大大增加了LED的光输出。 描述LED结构的其它实施例。

    Polarized Semiconductor Light Emitting Device
    38.
    发明申请
    Polarized Semiconductor Light Emitting Device 审中-公开
    极化半导体发光器件

    公开(公告)号：US20080265263A1

    公开(公告)日：2008-10-30

    申请号：US12171718

    申请日：2008-07-11

    申请人： Matthijs H. Keuper ,  Michael R. Krames ,  Gerd O. Mueller

    发明人： Matthijs H. Keuper ,  Michael R. Krames ,  Gerd O. Mueller

    IPC分类号： H01L33/00

    CPC分类号： H04N9/3152 ,  H01L33/0004 ,  H01L33/16 ,  H01L33/18 ,  H01L33/32 ,  H01L33/44 ,  H01L33/507 ,  H01L33/60

    摘要： A light emitting device includes a light emitting diode (LED), a concentrator element, such as a compound parabolic concentrator, and a wavelength converting material, such as a phosphor. The concentrator element receives light from the LED and emits the light from an exit surface, which is smaller than the entrance surface. The wavelength converting material is, e.g., disposed over the exit surface. The radiance of the light emitting diode is preserved or increased despite the isotropic re-emitted light by the wavelength converting material. In one embodiment, the polarized light from a polarized LED is provided to a polarized optical system, such as a microdisplay. In another embodiment, the orthogonally polarized light from two polarized LEDs is combined, e.g., via a polarizing beamsplitter, and is provided to non-polarized optical system, such as a microdisplay. If desired, a concentrator element may be disposed between the beamsplitter and the microdisplay.

    摘要翻译： 发光器件包括发光二极管（LED），诸如复合抛物面聚光器的聚光元件，以及诸如荧光体的波长转换材料。 集中器元件从LED接收光，并从出射表面发射光，该出射表面小于入射面。 波长转换材料例如设置在出射表面上。 即使波长转换材料具有各向同性的再发射光，发光二极管的辐射也被保留或增加。 在一个实施例中，来自偏振LED的偏振光被提供给诸如微显示器的偏振光学系统。 在另一个实施例中，来自两个偏振LED的正交偏振光例如经由偏振分束器组合，并被提供给诸如微显示器之类的非偏振光学系统。 如果需要，可以在分束器和微显示器之间设置集中器元件。

    Polarized semiconductor light emitting device
    39.
    发明授权
    Polarized semiconductor light emitting device 失效
    极化半导体发光器件

    公开(公告)号：US07408201B2

    公开(公告)日：2008-08-05

    申请号：US10804314

    申请日：2004-03-19

    申请人： Matthijs H. Keuper ,  Michael R. Krames ,  Gerd O. Mueller

    发明人： Matthijs H. Keuper ,  Michael R. Krames ,  Gerd O. Mueller

    IPC分类号： G02F1/133

    CPC分类号： H04N9/3152 ,  H01L33/0004 ,  H01L33/16 ,  H01L33/18 ,  H01L33/32 ,  H01L33/44 ,  H01L33/507 ,  H01L33/60

    摘要： A light emitting device includes a light emitting diode (LED), a concentrator element, such as a compound parabolic concentrator, and a wavelength converting material, such as a phosphor. The concentrator element receives light from the LED and emits the light from an exit surface, which is smaller than the entrance surface. The wavelength converting material is, e.g., disposed over the exit surface. The radiance of the light emitting diode is preserved or increased despite the isotropic re-emitted light by the wavelength converting material. In one embodiment, the polarized light from a polarized LED is provided to a polarized optical system, such as a microdisplay. In another embodiment, the orthogonally polarized light from two polarized LEDs is combined, e.g., via a polarizing beamsplitter, and is provided to non-polarized optical system, such as a microdisplay. If desired, a concentrator element may be disposed between the beamsplitter and the microdisplay.

    摘要翻译： 发光器件包括发光二极管（LED），诸如复合抛物面聚光器的聚光元件，以及诸如荧光体的波长转换材料。 集中器元件从LED接收光，并从出射表面发射光，该出射表面小于入射面。 波长转换材料例如设置在出射表面上。 即使波长转换材料具有各向同性的再发射光，发光二极管的辐射也被保留或增加。 在一个实施例中，来自偏振LED的偏振光被提供给诸如微显示器的偏振光学系统。 在另一个实施例中，来自两个偏振LED的正交偏振光例如经由偏振分束器组合，并被提供给诸如微显示器之类的非偏振光学系统。 如果需要，可以在分束器和微显示器之间设置集中器元件。