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122 条记录 (耗时 0.042 秒)

    Self-aligned thin-film transistor and method of forming same
    31.
    发明授权
    Self-aligned thin-film transistor and method of forming same 失效

    公开(公告)号：US07648860B2

    公开(公告)日：2010-01-19

    申请号：US12403309

    申请日：2009-03-12

    申请人： Rene Lujan ,  William S. Wong

    发明人： Rene Lujan ,  William S. Wong

    IPC分类号： H01L21/335 ,  H01L21/336

    CPC分类号： H01L29/42384 ,  H01L29/4908 ,  H01L29/66757

    摘要： A method of manufacturing a thin-film transistor or like structure provides conductive “tails” below an overhang region formed by a top gate structure. The tails increase in thickness as they extend outward from a point under the overhang to the source and drain contacts. The tails provide a low resistance conduction path between the source and drain regions and the channel, with low parasitic capacitance. The thickness profile of the tails is controlled by the deposition of material over and on the lateral side surfaces of the gate structure.

    SELF-ALIGNED THIN-FILM TRANSISTOR AND METHOD OF FORMING SAME
    32.
    发明申请
    SELF-ALIGNED THIN-FILM TRANSISTOR AND METHOD OF FORMING SAME 有权

    公开(公告)号：US20090294768A1

    公开(公告)日：2009-12-03

    申请号：US12130347

    申请日：2008-05-30

    申请人： Rene Lujan ,  William S. Wong

    发明人： Rene Lujan ,  William S. Wong

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L29/42384 ,  H01L29/4908 ,  H01L29/66757

    摘要： A method of manufacturing a thin-film transistor or like structure provides conductive “tails” below an overhang region formed by a top gate structure. The tails increase in thickness as they extend outward from a point under the overhang to the source and drain contacts. The tails provide a low resistance conduction path between the source and drain regions and the channel, with low parasitic capacitance. The thickness profile of the tails is controlled by the deposition of material over and on the lateral side surfaces of the gate structure.

    Method of manufacturing and structure of polycrystalline semiconductor thin-film heterostructures on dissimilar substrates
    35.
    发明授权
    Method of manufacturing and structure of polycrystalline semiconductor thin-film heterostructures on dissimilar substrates 有权
    在不同基板上制造多晶半导体薄膜异质结构的方法

    公开(公告)号：US07410882B2

    公开(公告)日：2008-08-12

    申请号：US10950452

    申请日：2004-09-28

    申请人： William S. Wong ,  Jeng-Ping Lu ,  Robert A. Street

    发明人： William S. Wong ,  Jeng-Ping Lu ,  Robert A. Street

    IPC分类号： H01L21/30

    CPC分类号： H01L27/1266 ,  H01L21/76254 ,  H01L21/763 ,  H01L27/1214 ,  H01L27/1274 ,  H01L29/78603

    摘要： According to various exemplary embodiments of this invention, a method of producing a semiconductor structure is provided that includes providing a layered structure on a first substrate, the layered structure including a silicon layer that is provided over a first dielectric layer, a first dielectric layer that is provided over an etch-stop layer, the etch-stop layer provided over a buffer layer, the buffer layer provided over a sacrificial layer, and a sacrificial layer provided over a first substrate. Moreover, various exemplary embodiments of the methods of this invention provide for a second substrate over the layered structure, separating the first substrate and the sacrificial layer from the buffer layer, separating the buffer layer and the etch-stop layer from the first dielectric layer and providing a drain electrode and a source electrode over the layered structure. Moreover, according to various exemplary embodiments of the devices of this invention, a transistor device is provided that includes a substrate, a gate electrode over the substrate, a laser recrystallized polycrystalline semiconductor layer over the gate electrode and a source electrode and a drain electrode over the laser recrystallized polycrystalline semiconductor. Finally, according to various exemplary embodiments of the devices of this invention, a transistor device is provided that includes a substrate, a laser recrystallized polycrystalline semiconductor over the substrate, a source electric and a drain electrode over the laser recrystallized polycrystalline semiconductor and a gate electrode over the source electrode and the drain electrode.

    摘要翻译： 根据本发明的各种示例性实施例，提供了一种制造半导体结构的方法，其包括在第一基板上提供分层结构，所述层状结构包括设置在第一介电层上的硅层，第一介电层， 提供在蚀刻停止层上，在缓冲层上提供的蚀刻停止层，设置在牺牲层上的缓冲层以及设置在第一衬底上的牺牲层。 此外，本发明方法的各种示例性实施例提供了层叠结构上的第二衬底，将第一衬底和牺牲层与缓冲层分离，将缓冲层和蚀刻停止层与第一介电层分离，以及 在层状结构上设置漏电极和源电极。 此外，根据本发明的装置的各种示例性实施例，提供了一种晶体管器件，其包括衬底，衬底上的栅电极，栅电极上的激光再结晶多晶半导体层，以及源电极和漏电极 激光再结晶多晶半导体。 最后，根据本发明的器件的各种示例性实施例，提供了一种晶体管器件，其包括衬底，衬底上的激光再结晶多晶半导体，激光再结晶多晶半导体上的源电极和漏电极以及栅电极 在源电极和漏电极上。

    Printing method for high performance electronic devices
    36.
    发明申请
    Printing method for high performance electronic devices 有权
    高性能电子设备的打印方法

    公开(公告)号：US20080149920A1

    公开(公告)日：2008-06-26

    申请号：US11644055

    申请日：2006-12-22

    申请人： Michael L. Chabinyc ,  William S. Wong

    发明人： Michael L. Chabinyc ,  William S. Wong

    IPC分类号： H01L29/06 ,  H01L21/84

    CPC分类号： H01L51/0005 ,  B82Y10/00 ,  H01L51/0012 ,  H01L51/0048 ,  H01L51/0545 ,  Y10S977/723 ,  Y10S977/786

    摘要： A method of depositing elongated nanostructures that allows accurate positioning and orientation is described. The method involves printing or otherwise depositing elongated nanostructures in a carrier solution. The deposited droplets are also elongated, usually by patterning the surface upon which the droplets are deposited. As the droplet evaporates, the fluid flow within the droplets is controlled such that the nanostructures are deposited either at the edge of the elongated droplet or the center of the elongated droplet. The described deposition technique has particular application in forming the active region of a transistor.

    摘要翻译： 描述了允许精确定位和取向的细长纳米结构的沉积方法。 该方法涉及在载体溶液中印刷或以其它方式沉积细长的纳米结构。 沉积的液滴也是细长的，通常通过图案化沉积有液滴的表面。 当液滴蒸发时，控制液滴内的流体流动，使得纳米结构沉积在细长液滴的边缘或细长液滴的中心。 所描述的沉积技术特别适用于形成晶体管的有源区。