公开(公告)号：US07535220B2

公开(公告)日：2009-05-19

申请号：US10597838

申请日：2005-02-10

Applicant: Yuichiro Sasaki ,  Tamaki Watanabe ,  Takeo Kawaguchi ,  Shinichi Watanabe ,  Takeshi Katayama ,  Bunji Mizuno ,  Hisataka Kanada

Inventor： Yuichiro Sasaki ,  Tamaki Watanabe ,  Takeo Kawaguchi ,  Shinichi Watanabe ,  Takeshi Katayama ,  Bunji Mizuno ,  Hisataka Kanada

IPC: G01R33/035

CPC classification number: H05H1/0087 ,  G01R33/0356 ,  G01R33/0358 ,  H01J37/3171 ,  H01J2237/31703

Abstract: A measuring device includes a magnetic shielding part for shielding an outer magnetic field, and a plurality of magnetic field sensors which are arranged in a shielding space which is formed by the magnetic shielding part, wherein the magnetic field sensor includes a plurality of magnetic field collection mechanisms which collect magnetic fields which the beam current to be measured generates, and the magnetic field collection mechanism is a cylindrical structural body which has at least a surface thereof formed of a superconductive body and includes a bridge portion which has only a portion thereof formed of a superconductive body on an outer peripheral portion thereof, and a magnetic field which the beam current to be measured generates is measured by the magnetic field sensors. Due to the arrangement of the plurality of magnetic field sensors, a beam position and a beam current can be detected.

Abstract translation: 测量装置包括用于屏蔽外部磁场的磁屏蔽部分和布置在由磁屏蔽部分形成的屏蔽空间中的多个磁场传感器，其中磁场传感器包括多个磁场采集 收集要测量的束电流产生的磁场的机构，并且磁场收集机构是至少具有由超导体形成的表面的圆柱形结构体，并且包括桥部，该桥部仅形成有一部分， 在其外周部分上的超导体和通过磁场传感器测量待测量的束电流的磁场。 由于多个磁场传感器的布置，可以检测光束位置和光束电流。

公开(公告)号：US07507978B2

公开(公告)日：2009-03-24

申请号：US11540064

申请日：2006-09-29

Applicant: Bo H. Vanderberg ,  Patrick Splinter

Inventor： Bo H. Vanderberg ,  Patrick Splinter

IPC: G21K1/093 ,  H01J37/08 ,  H01J37/317

CPC classification number: H01J37/1471 ,  H01J37/04 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/0475 ,  H01J2237/055 ,  H01J2237/1501 ,  H01J2237/152 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/3045 ,  H01J2237/31703

Abstract: A parallelizing component of an ion implantation system comprises two angled dipole magnets that mirror one another and serve to bend an ion beam traversing therethrough to have a substantially “s” shape. This s bend serves to filter out contaminants of the beam, while the dipoles also parallelize the beam to facilitate uniform implant properties across the wafer, such as implant angle, for example. Additionally, a deceleration stage is included toward the end of the implantation system so that the energy of the beam can be kept relatively high throughout the beamline to mitigate beam blowup.

Abstract translation: 离子注入系统的平行化部件包括两个成角度的偶极子磁体，其彼此相互反射并用于弯曲横穿其中的离子束以具有基本上“s”的形状。 该弯曲用于滤除光束的污染物，而偶极子也使光束平行化，以促进跨晶片的均匀植入性能，例如植入角度。 此外，朝向植入系统的端部包括减速阶段，使得束的能量可以在整个束线中保持相对较高以减轻束的膨胀。

公开(公告)号：US07488959B2

公开(公告)日：2009-02-10

申请号：US11423306

申请日：2006-06-09

Applicant: Yong Soo Jung ,  Seung Woo Jin ,  Min Yong Lee ,  Kyoung Bong Rouh

Inventor： Yong Soo Jung ,  Seung Woo Jin ,  Min Yong Lee ,  Kyoung Bong Rouh

IPC: H01J37/20

CPC classification number: H01J37/3172 ,  H01J2237/31703 ,  H01J2237/31711

Abstract: Disclosed herein is an apparatus and method for partial ion implantation. The apparatus includes a wafer support, an ion beam irradiator capable of generating and irradiating an ion beam entering the wafer, and an ion beam exposure adjustor to adjust exposure of the wafer with respect to the ion beam according to regions of the wafer by setting an exposure opening via combination of ion beam shields for blocking the ion beam with respect to the wafer. The exposure opening enables the wafer to be partially exposed to the ion beam irradiated therethrough. With this apparatus, effective partial ion implantation can be performed to compensate variation of a threshold voltage Vt in a channel of a transistor, thereby providing more uniform characteristics of the transistor.

Abstract translation: 本文公开了一种用于部分离子注入的装置和方法。 该装置包括晶片支撑件，能够产生和照射进入晶片的离子束的离子束照射器和离子束曝光调节器，用于根据晶片的区域调整晶片相对于离子束的曝光， 通过离子束屏蔽的组合来暴露开口，用于阻挡离子束相对于晶片。 曝光开口使得晶片能够部分地暴露于通过其照射的离子束。 利用该装置，可以执行有效的部分离子注入以补偿晶体管的沟道中的阈值电压Vt的变化，从而提供更均匀的晶体管特性。

公开(公告)号：US07479643B2

公开(公告)日：2009-01-20

申请号：US11174107

申请日：2005-07-01

Applicant: Thomas Neil Horsky

Inventor： Thomas Neil Horsky

IPC: H01J27/02

CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J27/205 ,  H01J37/08 ,  H01J2237/047 ,  H01J2237/049 ,  H01J2237/063 ,  H01J2237/0812 ,  H01J2237/0815 ,  H01J2237/082 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/31701 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823814

Abstract: The ionization chamber is defined by a removable block disposed in heat transfer relationship to a temperature controlled mounting block, preferably the removable block comprised of graphite, silicon carbide or aluminum. The ion source includes a mounting flange for joining the ion source to the housing of an ion implanter, the ionization chamber being located on the inside of the mounting flange and the vaporizer being removably mounted to the exterior of the mounting flange via at least one isolation valve which is separable from the mounting flange with the vaporizer, enabling the vaporizer charge volume to be isolated by the valve in closed position during handling, preferably there being two isolation valve in series, one unified with and transportable with a removed vaporizer unit, and one constructed to remain with and isolate the remainder of the ion source from the atmosphere. In certain preferred embodiments, two such vaporizers are provided, enabling one to be absent, while being charged or serviced, while the other operates, or enabling two different materials to be vaporized without maintenance of the ion source, or enabling additional quantities of the same materials to be present to enable a protracted implant run.

Abstract translation: 电离室由与温度控制的安装块的热传递关系设置的可移除的块限定，优选地由石墨，碳化硅或铝组成的可移除块。 离子源包括用于将离子源连接到离子注入机的壳体的安装凸缘，电离室位于安装凸缘的内侧，并且蒸发器通过至少一个隔离件可拆卸地安装到安装凸缘的外部 阀，其与安装法兰与蒸发器分离，使得蒸发器充气体积在处理期间由阀处于闭合位置隔离，优选地具有两个串联的隔离阀，一个与已移除的蒸发器单元统一并且可移除的隔离阀，以及 一个被构造为留下离子源的剩余部分并与之隔离。 在某些优选实施例中，提供了两个这样的蒸发器，使得一个在被充电或维修的同时被放置，而另一个操作时，或者使得两个不同的材料在不维护离子源的情况下蒸发，或使得能够附加数量相同 存在的材料能够延长植入物运行。

公开(公告)号：US07476877B2

公开(公告)日：2009-01-13

申请号：US11353820

申请日：2006-02-14

Applicant: Russell J. Low ,  George M. Gammel ,  Peter F. Kurunczi ,  Eric Cobb

Inventor： Russell J. Low ,  George M. Gammel ,  Peter F. Kurunczi ,  Eric Cobb

IPC: H01J37/30

CPC classification number: H01J37/3171 ,  H01J2237/24405 ,  H01J2237/31703

Abstract: A charge monitoring system may include a platen having a surface configured to accept a wafer thereon, and a charge monitor disposed relative to the platen so that an ion beam simultaneously strikes a portion of the charge monitor and a portion of the wafer. The charge monitor is configured to provide a charge monitor signal representative of a charge on a surface of the wafer when the ion beam simultaneously strikes the portion of the charge monitor and the portion of the wafer. The charge monitor signal may depend, at least in part, on a beam potential of the ion beam.

Abstract translation: 电荷监测系统可以包括具有被配置为在其上接受晶片的表面的压板和相对于压板设置的电荷监测器，使得离子束同时撞击电荷监测器的一部分和晶片的一部分。 电荷监视器被配置为当离子束同时撞击电荷监视器的部分和晶片的部分时，提供表示晶片表面上的电荷的电荷监测信号。 电荷监测信号至少部分地取决于离子束的束电位。

公开(公告)号：US07462847B2

公开(公告)日：2008-12-09

申请号：US11502494

申请日：2006-08-11

Applicant: Satoshi Yasuda

Inventor： Satoshi Yasuda

IPC: H01J37/30

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/304 ,  H01J37/3045 ,  H01J2237/20228 ,  H01J2237/20278 ,  H01J2237/30455 ,  H01J2237/30477 ,  H01J2237/30488 ,  H01J2237/31703

Abstract: An ion implanter is provided with a system for monitoring parameters of the ion implanter in real time to control respective components in the ion implanter. This system is allowed to have a function of calculating an accumulated dose distribution during ion implantation treatment and correcting a mechanical scan speed of a wafer holding section in a Y direction so as to render an accumulated dose uniform, a function of changing a magnetic field of a mass analyzing section to thereby control a center position of an ion beam, and a function of varying a suppression voltage of an aperture and an ion beam current to control a diameter of the ion beam.

Abstract translation: 离子注入机设置有用于实时监测离子注入机的参数以控制离子注入机中的各个部件的系统。 允许该系统具有在离子注入处理期间计算累积剂量分布并且校正晶片保持部分在Y方向上的机械扫描速度以使累积剂量均匀的功能，改变磁场的磁场的功能 质量分析部分，从而控制离子束的中心位置，以及改变孔径抑制电压和离子束电流的功能，以控制离子束的直径。

公开(公告)号：US20080296472A1

公开(公告)日：2008-12-04

申请号：US11809644

申请日：2007-06-01

Applicant: Juan-Lin Chen ,  Yung-Fu Yeh ,  Yuk-Tong Lee ,  Nai-Han Cheng

Inventor： Juan-Lin Chen ,  Yung-Fu Yeh ,  Yuk-Tong Lee ,  Nai-Han Cheng

IPC: H01J37/244

CPC classification number: H01J37/3171 ,  H01J37/243 ,  H01J37/304 ,  H01J2237/30472 ,  H01J2237/31703

Abstract: An apparatus for monitoring beam currents of an implanter is provided. The apparatus includes a beam-sensing unit for sensing the beam currents; a position-determining unit for determining scan positions; and a computing unit. The computing unit is configured to perform the functions of receiving the beam currents from the beam-sensing unit; receiving the scan positions from the position-determining unit; and determining a drift status of the implanter from the beam currents, wherein the computing unit is configured to receive the beam currents and the scan position periodically between a starting time and an ending time of a scan process of the implanter.

Abstract translation: 提供一种用于监测注入机的束电流的装置。 该装置包括用于感测束电流的光束感测单元; 位置确定单元，用于确定扫描位置; 和计算单元。 所述计算单元被配置为执行从所述波束感测单元接收波束电流的功能; 从所述位置确定单元接收扫描位置; 以及从所述束电流确定所述注入器的漂移状态，其中所述计算单元被配置为在所述注入器的扫描处理的开始时间和结束时间之间周期性地接收所述波束电流和所述扫描位置。

公开(公告)号：US07442944B2

公开(公告)日：2008-10-28

申请号：US10960904

申请日：2004-10-07

Applicant: Shengwu Chang ,  Antonella Cucchetti ,  Joseph P. Dzengeleski ,  Gregory R. Gibilaro ,  Rosario Mollica ,  Gregg A. Norris ,  Joseph C. Olson ,  Marie J. Welsch

Inventor： Shengwu Chang ,  Antonella Cucchetti ,  Joseph P. Dzengeleski ,  Gregory R. Gibilaro ,  Rosario Mollica ,  Gregg A. Norris ,  Joseph C. Olson ,  Marie J. Welsch

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J2237/24542 ,  H01J2237/30461 ,  H01J2237/31703

Abstract: An ion beam tuning method, system and program product for tuning an ion implanter system are disclosed. The invention obtains an ion beam profile of the ion beam by, for example, scanning the ion beam across a profiler that is within an implant chamber; and tunes the ion implanter system to maximize an estimated implant current based on the ion beam profile to simultaneously optimize total ion beam current and ion beam spot width, and maximize implant current. In addition, the tuning can also position the ion beam along a desired ion beam path based on the feedback of the spot beam center, which improves ion implanter system productivity and performance by reducing ion beam setup time and provides repeatable beam angle performance for each ion beam over many setups.

Abstract translation: 公开了用于调整离子注入机系统的离子束调谐方法，系统和程序产品。 本发明通过例如扫描离子束通过植入室内的轮廓仪获得离子束的离子束轮廓; 并调整离子注入系统，以根据离子束轮廓最大化估计的注入电流，以同时优化总离子束电流和离子束斑点宽度，并最大化注入电流。 此外，调谐还可以基于点光束中心的反馈沿着期望的离子束路径定位离子束，其通过减少离子束建立时间改善离子注入系统的生产率和性能，并为每个离子提供可重复的射束角度性能 横跨许多设置。

公开(公告)号：US07417242B2

公开(公告)日：2008-08-26

申请号：US11390039

申请日：2006-03-27

Applicant: Andrew M. Ray

Inventor： Andrew M. Ray

IPC: G21F5/10 ,  H01J37/08

CPC classification number: H01J37/244 ,  H01J37/304 ,  H01J37/3045 ,  H01J37/3171 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/24542 ,  H01J2237/30405 ,  H01J2237/30411 ,  H01J2237/31701 ,  H01J2237/31703

Abstract: A system, apparatus, and method for determining position and two angles of incidence of an ion beam to a surface of a workpiece is provided. A measurement apparatus having an elongate first and second sensor is coupled to a translation mechanism, wherein the first sensor extends in a first direction perpendicular to the translation, and wherein the second sensor extends at an oblique angle to the first sensor. The first and second elongate sensors sense one or more characteristics of the ion beam as the first and second sensors pass through the ion beam at a respective first time and a second time, and a controller is operable to determine a position and first and second angle of incidence of the ion beam, based, at least in part, on the one or more characteristics of the ion beam sensed by the first sensor and second sensor at the first and second times.

Abstract translation: 提供了一种用于确定离子束到工件表面的位置和两个入射角的系统，装置和方法。 具有细长的第一和第二传感器的测量装置耦合到平移机构，其中第一传感器沿垂直于平移的第一方向延伸，并且其中第二传感器以与第一传感器成倾斜的角度延伸。 当第一和第二传感器在相应的第一时间和第二时间通过离子束时，第一和第二细长传感器感测离子束的一个或多个特性，并且控制器可操作以确定位置和第一和第二角度 至少部分地基于由第一传感器和第二传感器在第一次和第二次感测的离子束的一个或多个特性。

公开(公告)号：US20080182347A1

公开(公告)日：2008-07-31

申请号：US11998901

申请日：2007-12-03

Applicant: Kenneth Steeples ,  Adam Bertuch ,  Edward Tsidilkovski

Inventor： Kenneth Steeples ,  Adam Bertuch ,  Edward Tsidilkovski

IPC: H01L21/66 ,  B05C11/00

CPC classification number: G01R31/2648 ,  H01J37/3171 ,  H01J2237/24507 ,  H01J2237/24592 ,  H01J2237/31703 ,  H01L21/76254 ,  H01L22/14

Abstract: A method of in-line characterization of ion implant process, during the SOI bond and cleave manufacturing or engineered silicon layer fabrication. In one embodiment, the method includes the steps of illuminating the engineered donor wafer using a modulated light source; performing a non-contact SPV measurement on the silicon wafer; measuring a dynamic charge (Qd) in response to implant induced crystal damage; and determining the accuracy and uniformity of the value of an implant parameter in response to the dynamic charge. In another embodiment, In another embodiment, the step of determining utilizes the equation VPV≈kTΦ/ωQnet where VPV is photo voltage generated in the implanted wafer, Φ is a light flux of the modulated light source, T is temperature of the wafer, and ω is a light modulation frequency of the modulated light source.

Abstract translation: 离子注入工艺的在线表征的方法，在SOI键和切割制造或工程硅层制造期间。 在一个实施例中，该方法包括以下步骤：使用调制光源照射工程施主晶圆; 在硅晶片上执行非接触SPV测量; 响应于植入物诱导的晶体损伤测量动态电荷（Q SUB）; 以及响应于动态电荷确定植入物参数的值的精度和均匀性。 在另一个实施例中，在另一个实施例中，确定步骤利用方程式V↑≈kTPhi/ωQ> net> where where where where where where where where where where where where where where where where where where where generated generated generated generated 在植入晶片中，Phi是调制光源的光通量，T是晶片的温度，ω是调制光源的调光频率。