公开(公告)号：US20240242939A1

公开(公告)日：2024-07-18

申请号：US18404542

申请日：2024-01-04

申请人： Micron Technology, Inc.

发明人： Chao Lin Lee ,  Rachmat Wibowo ,  Lipeng Qian ,  SAMUEL SISWANTO

IPC分类号： H01J37/32

CPC分类号： H01J37/32449 ,  H01J37/32715 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3328 ,  H01J2237/3346

摘要： Methods, systems, and devices for plasma-assisted film removal for wafer fabrication are described. The present disclosure provides in-situ techniques for removing a film from a select portion of a wafer, such as a surrounding bevel edge. After forming a film on the wafer using chemical vapor deposition (CVD), the wafer may be raised to a higher position in the chamber for CVD. A combination of gases may be ejected from a gas fixture and directed, respectively, to different portions of the wafer. The combination of gases may react to selectively remove the film from the bevel edge of the wafer and maintain the film on other portions of the wafer.

公开(公告)号：US20230268190A1

公开(公告)日：2023-08-24

申请号：US18112302

申请日：2023-02-21

申请人： Tokyo Electron Limited

发明人： Atsuki HASHIMOTO ,  Sho SAITOH ,  Yoshimitsu KON

IPC分类号： H01L21/311 ,  H01J37/32

CPC分类号： H01L21/31116 ,  H01J37/32449 ,  H01L21/31144 ,  H01J37/32174 ,  H01J2237/3346

摘要： A plasma processing method executed by a plasma processing apparatus with a chamber is provided. The method includes (a) providing in the chamber a substrate that includes an etching film and a mask film, the substrate including a first region where the etching film is exposed and a second region where the mask film is exposed, (b) supplying into the chamber a processing gas including a carbon-containing gas to generate plasma from the processing gas to etch the etching film and to form a protective film on the mask film, and (c) supplying the processing gas into the chamber to generate plasma from the processing gas to further etch the etching film and to remove at least part of the protective film. (b) includes a first period and a second period, and a flow rate of the carbon-containing gas in the first period is greater than a flow rate of the carbon-containing gas in the second period, and (c) includes a third period and a fourth period, and a flow rate of the carbon-containing gas in the third period is less than the flow rate of the carbon-containing gas in the second period and a flow rate of the carbon-containing gas in the fourth period.

公开(公告)号：US20230197412A1

公开(公告)日：2023-06-22

申请号：US17885543

申请日：2022-08-11

申请人： SEMES CO, LTD.

发明人： Seong Gil LEE ,  Young Je UM ,  Myoung Sub NOH ,  Dong Sub OH ,  Min Sung HAN ,  Dong Hun KIM ,  Wan Jae PARK

IPC分类号： H01J37/32 ,  B08B7/00

CPC分类号： H01J37/32422 ,  H01J37/32449 ,  B08B7/0035 ,  H01J2237/3346 ,  H01J2237/335 ,  H01L21/3065

摘要： A substrate processing apparatus using plasma capable of efficiently controlling the selectivity ratio of a silicon layer and an oxide layer is provided. The substrate processing apparatus comprises a first space disposed between an electrode and an ion blocker; a second space disposed between the ion blocker and a shower head; a processing space under the shower head for processing a substrate; a first supply hole for providing a first gas for generating plasma to the first space; a second supply hole for providing a second gas to be mixed with an effluent of the plasma to the second space; and a first coating layer formed on a first surface of the shower head facing the second space, not formed on a second surface of the shower head facing the processing space, and containing nickel.

公开(公告)号：US20230154731A1

公开(公告)日：2023-05-18

申请号：US17986147

申请日：2022-11-14

申请人： TES Co., Ltd

发明人： Bong-Soo KWON ,  Se-Woong BAE ,  Eun-Jin SONG

IPC分类号： H01J37/32

CPC分类号： H01J37/32477 ,  H01J37/32357 ,  H01J37/32082 ,  H01J37/32862 ,  H01J2237/3346 ,  H01J37/32788

摘要： There is provided a method of processing a substrate comprising an ONO stack in which a silicon oxide layer and a silicon nitride layer are stacked alternately and repeatedly on the substrate. The method includes: (a) primarily dry-etching silicon nitride layers of the ONO stack; (b) producing oxygen radicals and processing silicon oxide layers of the ONO stack with the oxygen radicals; and (c) secondarily dry-etching the silicon nitride layers of the ONO stack.

公开(公告)号：US20190198300A1

公开(公告)日：2019-06-27

申请号：US15852911

申请日：2017-12-22

申请人： Applied Materials, Inc.

发明人： Hanshen Zhang ,  Zhenjiang Cui ,  Nitin Ingle

IPC分类号： H01J37/32 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/535 ,  H01L23/532

CPC分类号： H01J37/32862 ,  H01J37/32357 ,  H01J37/32449 ,  H01J2237/3344 ,  H01J2237/3346 ,  H01L21/32136 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76895 ,  H01L23/53266 ,  H01L23/535

摘要： Exemplary methods for conditioning a processing region of a semiconductor processing chamber may include forming conditioning plasma effluents of an oxygen-containing precursor in a semiconductor processing chamber. The methods may include contacting interior surfaces of the semiconductor processing chamber bordering a substrate processing region with the conditioning plasma effluents. The methods may also include treating the interior surfaces of the semiconductor processing chamber.

公开(公告)号：US09576809B2

公开(公告)日：2017-02-21

申请号：US14269544

申请日：2014-05-05

申请人： Applied Materials, Inc.

发明人： Mikhail Korolik ,  Nitin K. Ingle ,  Jingchun Zhang ,  Anchuan Wang ,  Jie Liu

IPC分类号： H01L21/461 ,  H01L21/3065 ,  H01J37/32

CPC分类号： H01L21/3065 ,  H01J37/32357 ,  H01J2237/3346

摘要： Methods of selectively etching silicon relative to silicon germanium are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the silicon. The plasmas effluents react with exposed surfaces and selectively remove silicon while very slowly removing other exposed materials. The methods are useful for removing Si(1-X)GeX faster than Si(1-Y)GeY, for X

摘要翻译： 描述了相对于硅锗选择性地蚀刻硅的方法。 该方法包括使用由含氟前体和含氢前体形成的等离子体流出物的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与硅反应。 等离子体流出物与暴露的表面反应并选择性地去除硅，同时非常缓慢地除去其它暴露的材料。 对于X

公开(公告)号：US20150162465A1

公开(公告)日：2015-06-11

申请号：US14479523

申请日：2014-09-08

申请人： SOLEXEL, INC.

发明人： Pawan Kapur ,  Suketo Parikh ,  Mehrdad M. Moslehi

IPC分类号： H01L31/0236 ,  H01L31/0232 ,  H01J37/32 ,  H01L31/054

CPC分类号： H01L31/02366 ,  H01J37/32651 ,  H01J2237/3346 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/03921 ,  H01L31/046 ,  H01L31/054 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T428/24149

摘要： The present disclosure presents a three-dimensional thin film solar cell (3-D TFSC) substrate having enhanced mechanical strength, light trapping, and metal modulation coverage properties. The substrate includes a plurality of unit cells, which may or may not be different. Unit cells are defined as a small self-contained geometrical pattern which may be repeated. Each unit cell structure includes a wall enclosing a trench. Further, the unit cell includes an aperture having an aperture diameter. For the purposes of the present disclosure, the dimensions of interest include wall thickness, wall height, and aperture diameter. A pre-determined variation in these dimensions among unit cells across the substrate produces specific advantages.

摘要翻译： 本公开内容提供了具有增强的机械强度，光捕获和金属调制覆盖性能的三维薄膜太阳能电池（3-D TFSC）基板。 衬底包括多个单元电池，其可以是或可以不是不同的。 单元单元被定义为可以重复的小的独立几何图案。 每个单电池结构都包括一个包围沟槽的墙壁。 此外，单元电池包括具有孔径的孔。 为了本公开的目的，感兴趣的尺寸包括壁厚度，壁高度和孔直径。 在衬底之间的单元电池中这些尺寸的预定变化产生了特定的优点。

公开(公告)号：US06572732B2

公开(公告)日：2003-06-03

申请号：US10002940

申请日：2001-11-27

申请人： Kenneth S. Collins

发明人： Kenneth S. Collins

IPC分类号： H01L2100

CPC分类号： H01J37/32458 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32871 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/6831

摘要： The invention is embodied by a plasma reactor for processing a workpiece, including a reactor enclosure defining a processing chamber, a semiconductor window, a base within the chamber for supporting the workpiece during processing thereof, a gas inlet system for admitting a plasma precursor gas into the chamber, and an inductive antenna adjacent a side of the semiconductor window opposite the base for coupling power into the interior of the chamber through the semiconductor window electrode.

公开(公告)号：US06444085B1

公开(公告)日：2002-09-03

申请号：US09675319

申请日：2000-09-29

申请人： Kenneth S. Collins ,  Michael Rice ,  John Trow ,  Douglas Buchberger ,  Craig A. Roderick

发明人： Kenneth S. Collins ,  Michael Rice ,  John Trow ,  Douglas Buchberger ,  Craig A. Roderick

IPC分类号： C23C1600

CPC分类号： H01J37/32458 ,  B01D53/22 ,  B01D53/226 ,  B01D53/268 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/31116 ,  H01L21/6831

摘要： The invention is embodied in an inductively coupled RF plasma reactor including a reactor chamber enclosure defining a plasma reactor chamber and a support for holding a workpiece inside the chamber, a non-planar inductive antenna adjacent the reactor chamber enclosure, the non-planar inductive antenna including inductive elements spatially distributed in a non-planar relative to a plane of the workpiece to compensate for a null in an RF inductive pattern of the antenna, and a plasma source RF power supply coupled to the non-planar inductive antenna. The planar inductive antenna may be symmetrical or non-symmetrical, although it preferably includes a solenoid winding such as a vertical stack of conductive windings. In a preferred embodiment, the windings are at a minimum radial distance from the axis of symmetry while in an alternative embodiment the windings are at a radial distance from the axis of symmetry which is a substantial fraction of a radius of the chamber.

摘要翻译： 本发明体现在电感耦合RF等离子体反应器中，其包括限定等离子体反应器室的反应室外壳和用于将工件保持在室内的支撑件，邻近反应室壳体的非平面感应天线，非平面感应天线 包括相对于工件的平面空间分布在非平面中的电感元件，以补偿天线的RF感应图案中的零点，以及耦合到非平面感应天线的等离子体源RF电源。 平面感应天线可以是对称的或非对称的，尽管它优选地包括诸如导电绕组的垂直堆叠的螺线管绕组。 在优选实施例中，绕组处于距对称轴的最小径向距离，而在替代实施例中，绕组处于与对称半径相当大的部分的对称轴的径向距离处。

公开(公告)号：US20020096259A1

公开(公告)日：2002-07-25

申请号：US10021195

申请日：2001-10-30

申请人： Applied Materials, Inc.

发明人： Kenneth S. Collins ,  Michael Rice ,  Farahmand E. Askarinam ,  Douglas A. Buchberger JR. ,  Craig A. Roderick

IPC分类号： C23F001/02

CPC分类号： H01J37/32458 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/31116 ,  H01L21/6831

摘要： In a plasma reactor including a reactor chamber, a workpiece support for holding a workpiece inside the chamber during processing and an inductive antenna, a window electrode proximal a wall of the chamber, the antenna and wall being positioned adjacently, the window electrode being operable as (a) a capacitive electrode accepting RF power to capacitively coupled plasma source power into the chamber, and (b) a window electrode passing RF power therethrough from said antenna into the chamber to inductively couple plasma source power into the chamber.

摘要翻译： 在包括反应器室的等离子体反应器中，用于在处理期间将工件保持在室内的工件支撑件和感应天线，靠近室壁的窗口电极，天线和壁相邻地定位，窗口电极可操作为 （a）容纳RF功率的电容电极，以将等离子体源功率电容耦合到腔室中，以及（b）将RF功率从所述天线传递到腔室中以将等离子体源功率感应耦合到腔室中的窗口电极。