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    Radial waveguide systems and methods for post-match control of microwaves
    31.
    发明授权
    Radial waveguide systems and methods for post-match control of microwaves 有权
    用于微波后匹配控制的径向波导系统和方法

    公开(公告)号：US09564296B2

    公开(公告)日：2017-02-07

    申请号：US15063849

    申请日：2016-03-08

    Applicant: Applied Materials, Inc.

    Inventor： Satoru Kobayashi ,  Soonam Park ,  Dmitry Lubomirsky ,  Hideo Sugai

    IPC: H01J7/24 ,  H01J37/32 ,  H01J37/244

    CPC classification number: H01J37/32229 ,  H01J7/24 ,  H01J19/80 ,  H01J37/244 ,  H01J37/32201 ,  H01J37/32302 ,  H01J37/32311 ,  H01J37/32935 ,  H01J37/3299 ,  H05B41/16

    Abstract: A system provides post-match control of microwaves in a radial waveguide. The system includes the radial waveguide, and a signal generator that provides first and second microwave signals that have a common frequency. The signal generator adjusts a phase offset between the first and second signals in response to a correction signal. The system also includes first and second electronics sets, each of which amplifies a respective one of the first and second microwave signals. The system transmits the amplified, first and second microwave signals into the radial waveguide, and matches an impedance of the amplified microwave signals to an impedance presented by the waveguide. The system also includes at least two monitoring antennas disposed within the waveguide. A signal controller receives analog signals from the monitoring antennas, determines the digital correction signal based at least on the analog signals, and transmits the correction signal to the signal generator.

    Abstract translation: 系统提供径向波导中微波的后匹配控制。 该系统包括径向波导和提供具有共同频率的第一和第二微波信号的信号发生器。 信号发生器响应于校正信号来调节第一和第二信号之间的相位偏移。 该系统还包括第一和第二电子设备组，每个电子组件放大第一和第二微波信号中相应的一个。 该系统将放大的第一和第二微波信号传输到径向波导中，并将放大的微波信号的阻抗与由波导呈现的阻抗相匹配。 该系统还包括设置在波导内的至少两个监控天线。 信号控制器从监控天线接收模拟信号，至少基于模拟信号确定数字校正信号，并将校正信号发送到信号发生器。

    DRY ETCHING METHOD
    32.
    发明申请
    DRY ETCHING METHOD 审中-公开
    干蚀刻方法

    公开(公告)号：US20160307765A1

    公开(公告)日：2016-10-20

    申请号：US15196284

    申请日：2016-06-29

    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

    Inventor： Ze Shen ,  Tetsuo Ono ,  Hisao Yasunami

    IPC: H01L21/3065 ,  H01L21/02

    CPC classification number: H01L21/3065 ,  H01J37/32192 ,  H01J37/32201 ,  H01L21/02532

    Abstract: A dry etching method for isotropically etching each of SiGe layers selectively relative to each of Si layers in a laminated film is provided. The laminated film can include Si layers and SiGe layers alternately and repeatedly laminated. Each of the SiGe layers can be plasma-etched with plasma generated by a pulse-modulated radio frequency power using NF3 gas.

    Abstract translation: 提供了一种用于相对于层叠膜中的每个Si层选择性地各Siige层蚀刻每个SiGe层的干蚀刻方法。 层叠膜可以交替地层叠Si层和SiGe层。 可以使用NF 3气体通过脉冲调制射频功率产生的等离子体等离子体蚀刻每个SiGe层。

    Radial waveguide systems and methods for post-match control of microwaves
    33.
    发明授权
    Radial waveguide systems and methods for post-match control of microwaves 有权
    用于微波后匹配控制的径向波导系统和方法

    公开(公告)号：US09299537B2

    公开(公告)日：2016-03-29

    申请号：US14221132

    申请日：2014-03-20

    Applicant: Applied Materials, Inc.

    Inventor： Satoru Kobayashi ,  Soonam Park ,  Dmitry Lubomirsky ,  Hideo Sugai

    IPC: H01J7/24 ,  H01J37/32 ,  H01J37/244

    CPC classification number: H01J37/32229 ,  H01J7/24 ,  H01J19/80 ,  H01J37/244 ,  H01J37/32201 ,  H01J37/32302 ,  H01J37/32311 ,  H01J37/32935 ,  H01J37/3299 ,  H05B41/16

    Abstract: A system provides post-match control of microwaves in a radial waveguide. The system includes the radial waveguide, and a signal generator that provides first and second microwave signals that have a common frequency. The signal generator adjusts a phase offset between the first and second signals in response to a correction signal. The system also includes first and second electronics sets, each of which amplifies a respective one of the first and second microwave signals. The system transmits the amplified, first and second microwave signals into the radial waveguide, and matches an impedance of the amplified microwave signals to an impedance presented by the waveguide. The system also includes at least two monitoring antennas disposed within the waveguide. A signal controller receives analog signals from the monitoring antennas, determines the digital correction signal based at least on the analog signals, and transmits the correction signal to the signal generator.

    Abstract translation: 系统提供径向波导中微波的后匹配控制。 该系统包括径向波导和提供具有共同频率的第一和第二微波信号的信号发生器。 信号发生器响应于校正信号来调节第一和第二信号之间的相位偏移。 该系统还包括第一和第二电子设备组，每个电子组件放大第一和第二微波信号中相应的一个。 该系统将放大的第一和第二微波信号传输到径向波导中，并将放大的微波信号的阻抗与由波导呈现的阻抗相匹配。 该系统还包括设置在波导内的至少两个监控天线。 信号控制器从监控天线接收模拟信号，至少基于模拟信号确定数字校正信号，并将校正信号发送到信号发生器。

    PLASMA PROCESSING APPARATUS AND MICROWAVE INTRODUCTION DEVICE
    36.
    发明申请
    PLASMA PROCESSING APPARATUS AND MICROWAVE INTRODUCTION DEVICE 审中-公开
    等离子体处理装置和微波介绍装置

    公开(公告)号：US20150144265A1

    公开(公告)日：2015-05-28

    申请号：US14611728

    申请日：2015-02-02

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Yutaka Fujino ,  Atsushi Ueda ,  Shigenori Ozaki ,  Junichi Kitagawa

    IPC: H01J37/32 ,  C23C16/511

    CPC classification number: H01J37/32201 ,  C23C16/511 ,  H01J37/32211 ,  H01J37/32238 ,  H01J37/32431 ,  H05H1/46 ,  H05H2001/463

    Abstract: A plasma processing apparatus includes a microwave introduction device which introduces a microwave into a process chamber. The microwave introduction device includes a plurality of microwave transmitting plates which is fitted into a plurality of openings of a ceiling. The microwave transmitting plates are arranged on one virtual plane parallel to a mounting surface of a mounting table, with the microwave transmitting plates fitted into the respective openings. The microwave transmitting plates includes first to third microwave transmitting plates. The first to third microwave transmitting plates are arranged in such a manner that a distance between the center point of the first microwave transmitting window and the center point of the second microwave transmitting window becomes equal or approximately equal to a distance between the center point of the first microwave transmitting window and the center point of the third microwave transmitting window.

    Abstract translation: 等离子体处理装置包括将微波引入处理室的微波引入装置。 微波引入装置包括多个安装在天花板的多个开口中的微波透射板。 微波传输板布置在平行于安装台的安装表面的一个虚拟平面上，其中微波传输板安装在相应的开口中。 微波透射板包括第一至第三微波透射板。 第一至第三微波透射板以这样的方式布置，使得第一微波透射窗口的中心点与第二微波透射窗口的中心点之间的距离变为等于或近似等于第二微波透射窗口的中心点之间的距离 第一微波发射窗口和第三微波发射窗口的中心点。

    Plasma processing apparatus and microwave introduction device
    37.
    发明授权
    Plasma processing apparatus and microwave introduction device 有权
    等离子体处理装置和微波引入装置

    公开(公告)号：US08961735B2

    公开(公告)日：2015-02-24

    申请号：US13425872

    申请日：2012-03-21

    Applicant: Yutaka Fujino ,  Atsushi Ueda ,  Shigenori Ozaki ,  Junichi Kitagawa

    Inventor： Yutaka Fujino ,  Atsushi Ueda ,  Shigenori Ozaki ,  Junichi Kitagawa

    IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  H05H1/46

    CPC classification number: H01J37/32201 ,  C23C16/511 ,  H01J37/32211 ,  H01J37/32238 ,  H01J37/32431 ,  H05H1/46 ,  H05H2001/463

    Abstract: A plasma processing apparatus includes a microwave introduction device which introduces a microwave into a process chamber. The microwave introduction device includes a plurality of microwave transmitting plates which is fitted into a plurality of openings of a ceiling. The microwave transmitting plates are arranged on one virtual plane parallel to a mounting surface of a mounting table, with the microwave transmitting plates fitted into the respective openings. The microwave transmitting plates includes first to third microwave transmitting plates. The first to third microwave transmitting plates are arranged in such a manner that a distance between the center point of the first microwave transmitting window and the center point of the second microwave transmitting window becomes equal or approximately equal to a distance between the center point of the first microwave transmitting window and the center point of the third microwave transmitting window.

    Abstract translation: 等离子体处理装置包括将微波引入处理室的微波引入装置。 微波引入装置包括多个安装在天花板的多个开口中的微波透射板。 微波传输板布置在平行于安装台的安装表面的一个虚拟平面上，其中微波传输板安装在相应的开口中。 微波透射板包括第一至第三微波透射板。 第一至第三微波透射板以这样的方式布置，使得第一微波透射窗口的中心点与第二微波透射窗口的中心点之间的距离变为等于或近似等于第二微波透射窗口的中心点之间的距离 第一微波发射窗口和第三微波发射窗口的中心点。

    METHODS AND SYSTEMS FOR PLASMA DEPOSITION AND TREATMENT
    38.
    发明申请
    METHODS AND SYSTEMS FOR PLASMA DEPOSITION AND TREATMENT 审中-公开
    等离子体沉积和处理的方法和系统

    公开(公告)号：US20150028972A1

    公开(公告)日：2015-01-29

    申请号：US14341409

    申请日：2014-07-25

    Applicant: Peter F. Vandermeulen

    Inventor： Peter F. Vandermeulen

    IPC: H01P3/127 ,  H01J37/32 ,  H01P3/12

    CPC classification number: H01J37/32229 ,  C23C16/511 ,  C23C16/513 ,  H01J37/05 ,  H01J37/08 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/3244 ,  H01J37/32669 ,  H01J2237/057 ,  H01J2237/0817 ,  H01J2237/3323 ,  H01P3/12 ,  H01P3/127 ,  H01Q21/0043

    Abstract: This application is directed to an apparatus for creating microwave radiation patterns for an object detection system. The apparatus includes a waveguide conduit having first slots at one side of the conduit and corresponding second slots at an opposite side of the conduit. The waveguide conduit is coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of first slots. A plunger is moveably positioned in the waveguide conduit from one end thereof. The plunger allows the waveguide conduit to be tuned to generally optimize the power of the microwaves exiting the first slots. Secondary plungers are each fitted in one of the second slots to independently tune or detune microwave emittance through a corresponding first slot.

    Abstract translation: 本申请涉及用于产生物体检测系统的微波辐射图案的装置。 该装置包括波导导管，其具有在导管的一侧的第一狭槽和在导管的相对侧处的对应的第二狭槽。 波导管道耦合到微波源，用于从微波源通过多个第一槽传输微波。 柱塞从其一端可移动地定位在波导管道中。 柱塞允许波导管道被调谐以通常优化离开第一槽的微波的功率。 次级柱塞各自装配在第二槽中的一个中，以独立地调谐或分离通过相应的第一槽的微波发射。

    System and method for modulation of power and power related functions of PECVD discharge sources to achieve new film properties
    40.
    发明授权
    System and method for modulation of power and power related functions of PECVD discharge sources to achieve new film properties 有权
    用于调制PECVD放电源的功率和功率相关功能的系统和方法，以实现新的膜性质

    公开(公告)号：US07842355B2

    公开(公告)日：2010-11-30

    申请号：US11264596

    申请日：2005-11-01

    Applicant: Michael W. Stowell

    Inventor： Michael W. Stowell

    IPC: C23C8/00 ,  C23C16/00

    CPC classification number: C23C16/515 ,  C23C16/029 ,  C23C16/308 ,  C23C16/401 ,  C23C16/52 ,  H01J37/32201

    Abstract: A method of generating a film during a chemical vapor deposition process is disclosed. One embodiment includes generating a first electrical pulse having a first pulse amplitude; using the first electrical pulse to generate a first density of radicalized species; disassociating a feedstock gas using the radicalized species in the first density of radicalized species, thereby creating a first deposition material; depositing the first deposition material on a substrate; generating a second electrical pulse having a second pulse amplitude, wherein the second pulse amplitude is different from the first pulse width; using the second electrical pulse to generate a second density of radicalized species; disassociating a feedstock gas using the radicalized species in the second density of radicalized species, thereby creating a second deposition material; and depositing the second plurality of deposition materials on the first deposition material.

    Abstract translation: 公开了一种在化学气相沉积工艺期间产生膜的方法。 一个实施例包括产生具有第一脉冲幅度的第一电脉冲; 使用第一电脉冲产生第一密度的自由基化物种; 使用第一密度的自由基化物质中的自由基化物质分离原料气体，从而产生第一沉积材料; 将第一沉积材料沉积在基底上; 产生具有第二脉冲幅度的第二电脉冲，其中所述第二脉冲幅度不同于所述第一脉冲宽度; 使用第二电脉冲来产生第二密度的激进化物种; 使用第二密度的自由基化物质中的自由基化物质分解原料气体，从而产生第二沉积材料; 以及将所述第二多个沉积材料沉积在所述第一沉积材料上。

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