公开(公告)号：US09818896B1

公开(公告)日：2017-11-14

申请号：US15373207

申请日：2016-12-08

申请人： The Boeing Company

发明人： Terence de Lyon ,  Sevag Terterian ,  Hasan Sharifi

IPC分类号： H01L31/02 ,  H01L31/10 ,  H01L31/18 ,  H01L27/14 ,  H01L31/0352 ,  H01L31/109 ,  H01L31/0216 ,  H01L31/0304 ,  H01L27/144

CPC分类号： H01L31/035272 ,  H01L27/1443 ,  H01L31/02161 ,  H01L31/03046 ,  H01L31/109 ,  H01L31/1844

摘要： An infrared photodetector including a substrate, a barrier layer, and an absorber layer disposed between the substrate and the barrier layer, the absorber layer having a molar concentration grading that results in an uncoated quantum efficiency of greater than about 40 percent.

公开(公告)号：US09799689B2

公开(公告)日：2017-10-24

申请号：US15147847

申请日：2016-05-05

申请人： Artilux, Inc.

发明人： Szu-Lin Cheng ,  Shu-Lu Chen

IPC分类号： H01L27/144 ,  H01L29/06 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/109 ,  H01L31/18 ,  H01L31/036 ,  H01L31/105

CPC分类号： H01L27/1443 ,  H01L29/0649 ,  H01L31/02161 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/036 ,  H01L31/105 ,  H01L31/109 ,  H01L31/1808 ,  H01L31/1812 ,  H01L31/1868 ,  H02S40/44

摘要： A light absorption apparatus includes a substrate, a light absorption layer above the substrate on a first selected area, a silicon layer above the light absorption layer, a spacer surrounding at least part of the sidewall of the light absorption layer, an isolation layer surrounding at least part of the spacer, wherein the light absorption apparatus can achieve high bandwidth and low dark current.

公开(公告)号：US09786701B2

公开(公告)日：2017-10-10

申请号：US14926454

申请日：2015-10-29

申请人： STMICROELECTRONICS (RESEARCH & DEVELOPMENT) LIMITED ,  STMICROELECTRONICS (GRENOBLE 2) SAS

发明人： Pascal Mellot ,  Stuart McLeod ,  Bruce Rae ,  Marc Drader

IPC分类号： H01L31/107 ,  H01L27/144 ,  G01S7/486 ,  G01S7/497 ,  H01L31/0216 ,  H01L27/146 ,  H01L27/148

CPC分类号： H01L27/1443 ,  G01S7/4863 ,  G01S7/4865 ,  G01S7/497 ,  H01L27/1446 ,  H01L27/14623 ,  H01L27/14818 ,  H01L31/02164 ,  H01L31/107

摘要： A circuit may include an array of single photon avalanche diode (SPAD) cells, each SPAD cell configured to be selectively enabled by an activation signal. The circuit may include a control circuit configured to selectively enable a subset of the array of SPAD cells based on a measured count rate of the array of SPAD cells.

公开(公告)号：US09780240B2

公开(公告)日：2017-10-03

申请号：US15287148

申请日：2016-10-06

申请人： University of Massachusetts

发明人： Xuejun Lu ,  Guiru Gu ,  Puminun Vasinajindakaw

IPC分类号： H01L31/18 ,  H01L31/0352 ,  H01L27/144 ,  H01L31/0232 ,  H01L31/09

CPC分类号： H01L31/035218 ,  H01L27/1443 ,  H01L27/1446 ,  H01L31/02327 ,  H01L31/09

摘要： The invention relates to quantum dot and photodetector technology, and more particularly, to quantum dot infrared photodetectors (QDIPs) and focal plane array. The invention further relates to devices and methods for the enhancement of the photocurrent of quantum dot infrared photodetectors in focal plane arrays.

公开(公告)号：US09761751B2

公开(公告)日：2017-09-12

申请号：US15454294

申请日：2017-03-09

申请人： Semi Conductor Devices

发明人： Philip Klipstein

IPC分类号： H01L31/0352 ,  H01L31/11 ,  H01L27/144 ,  H01L31/0304

CPC分类号： H01L31/11 ,  H01L27/1443 ,  H01L31/03046 ,  H01L31/035209 ,  H01L31/035236 ,  H01L31/101 ,  Y02E10/544

摘要： The present invention discloses a photo-detector comprising: an n-type photon absorbing layer of a first energy bandgap; a middle barrier layer, an intermediate layer is a semiconductor structure; and a contact layer of a third energy bandgap, wherein the layer materials are selected such that the first energy bandgap of the photon absorbing layer is narrower than that of said middle barrier layer; wherein the material composition and thickness of said intermediate layer are selected such that the valence band of the intermediate layer lies above the valence band in the barrier layer to create an efficient trapping and transfer of minority carriers from the barrier layer to the contact layer such that a tunnel current through the barrier layer from the contact layer to the photon absorbing layer is less than a dark current in the photo-detector and the dark current from the photon-absorbing layer to said middle barrier layer is essentially diffusion limited and is due to the unimpeded flow of minority carriers, thus reducing generation-recombination (GR) noise of the photo-detector. The principles of the present invention also apply to inverted polarity structures of the form pBp in which all the doping polarities and band alignments described above are reversed.

公开(公告)号：US09755087B2

公开(公告)日：2017-09-05

申请号：US15142202

申请日：2016-04-29

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Solomon Assefa ,  Tymon Barwicz ,  William M. Green ,  Marwan H. Khater ,  Jessie C. Rosenberg ,  Steven M. Shank

IPC分类号： H01L21/02 ,  H01L31/0203 ,  H01L31/0216 ,  H01L31/18 ,  H01L27/144 ,  G02B6/12 ,  H01L21/3205 ,  H01L31/0232 ,  H01L21/84 ,  H01L49/02

CPC分类号： H01L31/0203 ,  G02B6/00 ,  G02B6/12004 ,  G02B6/4253 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/32053 ,  H01L21/84 ,  H01L27/1443 ,  H01L28/20 ,  H01L31/02019 ,  H01L31/02161 ,  H01L31/02327 ,  H01L31/153 ,  H01L31/18 ,  H01L31/1808 ,  H01L31/186 ,  H01L31/1872 ,  Y02E10/50 ,  Y02P70/521

摘要： Approaches for silicon photonics integration are provided. A method includes: forming at least one encapsulating layer over and around a photodetector; thermally crystallizing the photodetector material after the forming the at least one encapsulating layer; and after the thermally crystallizing the photodetector material, forming a conformal sealing layer on the at least one encapsulating layer and over at least one device. The conformal sealing layer is configured to seal a crack in the at least one encapsulating layer. The photodetector and the at least one device are on a same substrate. The at least one device includes a complementary metal oxide semiconductor device or a passive photonics device.

公开(公告)号：US09728565B2

公开(公告)日：2017-08-08

申请号：US14898088

申请日：2014-06-11

申请人： TRUSTEES OF DARTMOUTH COLLEGE

发明人： Eric R. Fossum ,  Jiaju Ma ,  Donald Hondongwa

IPC分类号： H01L27/146 ,  H01L31/075 ,  H01L27/144

CPC分类号： H01L27/14607 ,  H01L27/1443 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14681 ,  H01L31/075

摘要： Image sensor pixels having low full-well capacity and high sensitivity for applications such as DIS, qDIS, single/multi bit QIS. Some embodiments provide an image sensor pixel architecture, comprises a transfer gate, a floating diffusion region both formed on a first surface of a semiconductor substrate and a buried-well vertically pinned photodiode having a charge accumulation/storage region disposed substantially or entirely beneath the transfer gate. Image sensor may also comprise an array of pixels, wherein each pixel comprises: a vertical bipolar structure including an emitter, base, collector configured for storing photocarriers in the base; and a reset transistor coupled to the base, configured to be completely reset of all free carriers using the reset transistor. The emitter may be configured as a pinning layer to facilitate full depletion of the base. Such image sensor pixels may have a full well capacity less than that giving good signal-to-noise ratio (SNR).

公开(公告)号：US20170222076A1

公开(公告)日：2017-08-03

申请号：US15419273

申请日：2017-01-30

申请人： Heptagon Micro Optics Pte. Ltd.

发明人： Daniel Furrer ,  Stephan Beer ,  Bernhard Buettgen

IPC分类号： H01L31/0352 ,  H01L31/0224 ,  G01V8/10 ,  G01S17/08 ,  G01S7/481 ,  H01L27/144 ,  H01L31/16

CPC分类号： H01L31/035218 ,  G01S7/4816 ,  G01S7/4914 ,  G01S7/4915 ,  G01S17/36 ,  G01S17/89 ,  H01L27/1443 ,  H01L27/1446 ,  H01L31/022408 ,  H01L31/165

摘要： The present disclosure describes quantum dot film based demodulation structures and optical ranging systems including an array of QDF demodulation structures.

公开(公告)号：US20170194527A1

公开(公告)日：2017-07-06

申请号：US15356152

申请日：2016-11-18

申请人： NARSINGH B. SINGH ,  JOHN V. VELIADIS ,  BETTINA NECHAY ,  ANDRE BERGHMANS ,  DAVID J. KNUTESON ,  DAVID KAHLER ,  BRIAN WAGNER ,  MARC SHERWIN

发明人： NARSINGH B. SINGH ,  JOHN V. VELIADIS ,  BETTINA NECHAY ,  ANDRE BERGHMANS ,  DAVID J. KNUTESON ,  DAVID KAHLER ,  BRIAN WAGNER ,  MARC SHERWIN

IPC分类号： H01L31/107 ,  H01L31/18 ,  H01L31/0336 ,  H01L27/144 ,  H01L31/0232

CPC分类号： H01L31/1075 ,  H01L27/1443 ,  H01L27/1446 ,  H01L31/02327 ,  H01L31/0336 ,  H01L31/035227 ,  H01L31/18

摘要： An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.

公开(公告)号：US20170186895A1

公开(公告)日：2017-06-29

申请号：US15212084

申请日：2016-07-15

申请人： KOREA ELECTRONICS TECHNOLOGY INSTITUTE

发明人： Suk Won Jung ,  Yeon Shik Choi ,  Young Chang Jo ,  Jae Gi Son ,  Ki Man Jeon ,  Woo Kyeong Seong ,  Kook Nyung Lee ,  Min Ho Lee ,  Hyuck Ki Hong

IPC分类号： H01L31/0352 ,  H01L31/028 ,  H01L31/0224 ,  H01L27/144 ,  H01L31/18 ,  H01L31/107 ,  H01L27/02

CPC分类号： H01L31/035227 ,  H01L27/0248 ,  H01L27/1443 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/107 ,  H01L31/1804 ,  H01L31/1864

摘要： Disclosed is an avalanche photodiode using a silicon nanowire, including a first silicon nanowire formed of silicon (Si), a first conductive region formed by doping one surface of the first silicon nanowire with a first dopant, and a second conductive region formed by doping one surface of the first silicon nanowire with a second dopant having a conductive type different from that of the first dopant so as to be arranged continuously in a longitudinal direction from the first conductive region, wherein, when the magnitude of a reverse voltage applied to both ends of the first silicon nanowire is equal to or greater than a preset breakdown voltage, avalanche multiplication of inner current occurs due to the incidence of light from the outside.