公开(公告)号：US20060006381A1

公开(公告)日：2006-01-12

申请号：US11227501

申请日：2005-09-15

申请人： Tommie Kelley ,  Larry Boardman ,  Timothy Dunbar ,  Todd Jones ,  Dawn Muyres ,  Mark Pellerite ,  Terrance Smith

发明人： Tommie Kelley ,  Larry Boardman ,  Timothy Dunbar ,  Todd Jones ,  Dawn Muyres ,  Mark Pellerite ,  Terrance Smith

IPC分类号： H01L29/08

CPC分类号： H01L51/0541 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/312 ,  H01L21/3121 ,  H01L51/0052 ,  H01L51/0078 ,  H01L51/0533 ,  H01L51/0545

摘要： Provided is an organic thin film transistor comprising a polymeric layer interposed between a gate dielectric and an organic semiconductor layer. Various homopolymers, copolymers, and functional copolymers are taught for use in the polymeric layer. An integrated circuit comprising a multiplicity of thin film transistors and methods of making a thin film transistor are also provided. The organic thin film transistors of the invention typically exhibit improvement in one or more transistor properties.

公开(公告)号：US20050208400A1

公开(公告)日：2005-09-22

申请号：US11085460

申请日：2005-03-21

申请人： Takao Nishikawa ,  Yoshihiro Iwasa ,  Shin-ichiro Kobayashi ,  Taishi Takenobu

发明人： Takao Nishikawa ,  Yoshihiro Iwasa ,  Shin-ichiro Kobayashi ,  Taishi Takenobu

IPC分类号： H01L27/08 ,  G03G15/02 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/092 ,  H01L27/28 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05

CPC分类号： H01L51/0533 ,  B82Y10/00 ,  H01L27/283 ,  H01L51/002 ,  H01L51/0046 ,  H01L51/0545 ,  Y10S438/954 ,  Y10S438/981

摘要： An organic semiconductor device includes a gate insulating film, an organic semiconductor layer, and a voltage control layer disposed in at least part of an area between the gate insulating film and the organic semiconductor layer and giving an ambipolar characteristic to the organic semiconductor layer.

摘要翻译： 有机半导体器件包括栅极绝缘膜，有机半导体层和设置在栅极绝缘膜和有机半导体层之间的区域的至少一部分中并且向有机半导体层给出双极特性的电压控制层。

公开(公告)号：US06913944B2

公开(公告)日：2005-07-05

申请号：US10742194

申请日：2003-12-19

申请人： Katsura Hirai

发明人： Katsura Hirai

IPC分类号： G02F1/1368 ,  H01L27/28 ,  H01L35/24 ,  H01L51/05 ,  H01L51/10 ,  H01L51/30 ,  H01L51/40

CPC分类号： H01L51/0541 ,  G02F1/1368 ,  G02F2202/02 ,  H01L27/28 ,  H01L27/283 ,  H01L51/0037 ,  H01L51/0052 ,  H01L51/0055 ,  H01L51/0512 ,  H01L51/0516 ,  H01L51/0525 ,  H01L51/0529 ,  H01L51/0533 ,  H01L51/0537 ,  H01L51/0545 ,  H01L51/10 ,  H01L51/102 ,  H01L51/107

摘要： An organic thin-film transistor manufacturing method and an organic thin-film transistor manufactured by the method are disclosed, the method comprising the steps of a) forming a gate electrode on a substrate, b) forming a gate insulating layer on the substrate, c) forming an organic semiconductor layer on the substrate, d) forming an organic semiconductor layer protective layer on the organic semiconductor layer, e) removing a part of the organic semiconductor layer protective layer, and f) forming a source electrode and a drain electrode at portions where the organic semiconductor layer protective layer has been removed, so that the source electrode and drain electrode contacts the organic semiconductor layer.

摘要翻译： 公开了一种通过该方法制造的有机薄膜晶体管制造方法和有机薄膜晶体管，该方法包括以下步骤：a）在衬底上形成栅电极，b）在衬底上形成栅极绝缘层，c ）在所述衬底上形成有机半导体层，d）在所述有机半导体层上形成有机半导体层保护层，e）去除所述有机半导体层保护层的一部分，以及f）形成源电极和漏电极 去除了有机半导体层保护层的部分，使得源电极和漏电极接触有机半导体层。

公开(公告)号：US20040129937A1

公开(公告)日：2004-07-08

申请号：US10742194

申请日：2003-12-19

发明人： Katsura Hirai

IPC分类号： H01L035/24 ,  H01L051/00

CPC分类号： H01L51/0541 ,  G02F1/1368 ,  G02F2202/02 ,  H01L27/28 ,  H01L27/283 ,  H01L51/0037 ,  H01L51/0052 ,  H01L51/0055 ,  H01L51/0512 ,  H01L51/0516 ,  H01L51/0525 ,  H01L51/0529 ,  H01L51/0533 ,  H01L51/0537 ,  H01L51/0545 ,  H01L51/10 ,  H01L51/102 ,  H01L51/107

摘要： An organic thin-film transistor manufacturing method and an organic thin-film transistor manufactured by the method are disclosed, the method comprising the steps of a) forming a gate electrode on a substrate, b) forming a gate insulating layer on the substrate, c) forming an organic semiconductor layer on the substrate, d) forming an organic semiconductor layer protective layer on the organic semiconductor layer, e) removing a part of the organic semiconductor layer protective layer, and f) forming a source electrode and a drain electrode at portions where the organic semiconductor layer protective layer has been removed, so that the source electrode and drain electrode contacts the organic semiconductor layer.

摘要翻译： 公开了一种通过该方法制造的有机薄膜晶体管制造方法和有机薄膜晶体管，该方法包括以下步骤：a）在衬底上形成栅电极，b）在衬底上形成栅极绝缘层，c ）在所述衬底上形成有机半导体层，d）在所述有机半导体层上形成有机半导体层保护层，e）去除所述有机半导体层保护层的一部分，以及f）形成源电极和漏电极 去除了有机半导体层保护层的部分，使得源电极和漏电极接触有机半导体层。

公开(公告)号：US10038068B2

公开(公告)日：2018-07-31

申请号：US15228943

申请日：2016-08-04

申请人： SK INNOVATION CO., LTD.

发明人： Jun-Hyung Kim

IPC分类号： H01L29/788 ,  H01L29/423 ,  H01L21/28 ,  H01L29/66 ,  H01L29/49 ,  H01L51/05 ,  H01L27/11521 ,  H01L29/51

CPC分类号： H01L29/42332 ,  H01L27/11521 ,  H01L29/40114 ,  H01L29/4966 ,  H01L29/518 ,  H01L29/66825 ,  H01L29/7883 ,  H01L51/0529 ,  H01L51/0533 ,  H01L51/0537 ,  H01L51/055 ,  H01L51/0591

摘要： A non-volatile memory device includes a floating gate for charging and discharging of charges over a substrate. The floating gate comprises a linker layer formed over the substrate and including linkers to be bonded to metal ions and metallic nanoparticles formed out of the metal ions over the linker layer.

公开(公告)号：US20180076403A1

公开(公告)日：2018-03-15

申请号：US15680264

申请日：2017-08-18

申请人： Purdue Research Foundation

发明人： P. Veeraraghavan Ramachandran ,  Ameya Sanjay Kulkarni ,  Jianguo Mei ,  Yan Zhao

IPC分类号： H01L51/05 ,  B05D1/18

CPC分类号： H01L51/0533 ,  B05D1/18 ,  H01L51/0012 ,  H01L51/0516

摘要： The present invention relates to a process for functionalizing a surface of semi-conductors, conductors, and dielectrics using an amine-borane bearing a functionality from a group of, but not limited to, alkene, alkyne, hydroxyl, thiol, acetal, ester, amide, nitrile, nitro, or alkoxysilane, under a mild condition. Products of this facile process are also in the scope of this disclosure.

公开(公告)号：US20170200896A1

公开(公告)日：2017-07-13

申请号：US15464336

申请日：2017-03-20

申请人： Hong Kong Baptist University

发明人： Beng Soon Ong ,  Yanlian Lei

IPC分类号： H01L51/00 ,  C09D11/107 ,  C09D11/106 ,  C09D11/52 ,  C09D11/102

CPC分类号： H01L51/0036 ,  B32B3/10 ,  C08G61/126 ,  C08G2261/124 ,  C08G2261/1412 ,  C08G2261/212 ,  C08G2261/3223 ,  C08G2261/3243 ,  C08G2261/334 ,  C08G2261/344 ,  C08G2261/364 ,  C08G2261/51 ,  C08G2261/92 ,  C09D5/24 ,  C09D7/65 ,  C09D11/106 ,  C09D11/107 ,  C09D11/108 ,  C09D11/12 ,  C09D11/52 ,  C09D123/06 ,  C09D125/06 ,  C09D127/06 ,  C09D133/12 ,  C09D133/20 ,  C09D165/00 ,  H01L51/0003 ,  H01L51/0004 ,  H01L51/0026 ,  H01L51/0035 ,  H01L51/004 ,  H01L51/0043 ,  H01L51/0053 ,  H01L51/0533 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/0566 ,  Y10T428/24802 ,  C08L65/00 ,  C08L27/06 ,  C08L33/06 ,  C08L33/20 ,  C08L33/12 ,  C08L23/06

摘要： The present invention relates to a solution or ink composition for fabricating high-performance thin-film transistors. The solution or ink comprises an organic semiconductor and a mediating polymer such as polyacrylonitrile, polystyrene, or the like or mixture thereof, in an organic solvent such as chlorobenzene or dichlorobenzene. The percentage ratio by weight of semiconductor:mediating polymer ranges from 5:95 to 95:5, and preferably from 20:80 to 80:20. The solution or ink is used to fabricate via solution coating or printing a semiconductor film, followed by drying and thermal annealing if necessary to provide a channel semiconductor for organic thin-film transistors (OTFTs). The resulting OTFT device with said channel semiconductor has afforded OTFT performance, particularly field-effect mobility and current on/off ratio that are superior to those OTFTs with channel semiconductors fabricated without a mediating polymer.

公开(公告)号：US20170149002A1

公开(公告)日：2017-05-25

申请号：US15267242

申请日：2016-09-16

申请人： Samsung Electronics Co., Ltd.

发明人： Jiyoung Jung ,  Joo Young Kim ,  Jeong II Park

IPC分类号： H01L51/05 ,  H01L51/00

CPC分类号： H01L51/0545 ,  H01L51/0002 ,  H01L51/0012 ,  H01L51/0533

摘要： A method of manufacturing an organic thin film transistor includes forming a gate electrode and a gate insulator on a substrate, forming a self-assembled layer from self-assembled layer precursor on the gate insulator and forming an organic semiconductor on the self-assembled layer, a friction force is applied to the surface of the self-assembled layer in at least two directions between forming the self-assembled layer and forming the organic semiconductor, and an organic thin film transistor manufactured by the method, and a display device including the same are provided. A device of treating a surface of a thin film used for the method is provided.

公开(公告)号：US20170125693A1

公开(公告)日：2017-05-04

申请号：US15375187

申请日：2016-12-12

申请人： FUJIFILM CORPORATION

发明人： Toshihiro KARIYA ,  Kensuke MASUI ,  Takafumi NAKAYAMA ,  Shuji KANAYAMA ,  Hiroyuki TAKAHASHI

IPC分类号： H01L51/00

CPC分类号： H01L51/0071 ,  C09D11/037 ,  C09D11/322 ,  C09D11/52 ,  H01L51/0004 ,  H01L51/0005 ,  H01L51/004 ,  H01L51/0043 ,  H01L51/0068 ,  H01L51/0074 ,  H01L51/0094 ,  H01L51/0533 ,  H01L51/0545 ,  H01L51/0558

摘要： An object of the present invention is to provide a composition for forming an organic semiconductor film that makes it possible to obtain an organic semiconductor film having excellent mobility and heat stability, an organic semiconductor element including an organic semiconductor film having excellent mobility and heat stability, and a method for manufacturing the organic semiconductor element.The composition for forming an organic semiconductor film of the present invention contains an organic semiconductor having a condensed polycyclic aromatic group and a polymer, in which the number of rings in the condensed polycyclic aromatic group is equal to or greater than 4, at least two rings in the condensed polycyclic aromatic group contain at least one atom selected from the group consisting of a sulfur atom, a nitrogen atom, a selenium atom, and an oxygen atom, the condensed polycyclic aromatic group contains, as a partial structure, at least any one structure selected from the group consisting of a benzene ring, a naphthalene ring, and a phenanthrene ring, and the polymer has a glass transition temperature of equal to or higher than −100° C. and equal to or less than −30° C. and an elastic recovery of equal to or less than 30%.

公开(公告)号：US09368737B2

公开(公告)日：2016-06-14

申请号：US13877441

申请日：2011-10-05

申请人： Do Kyung Hwang ,  Jungbae Kim ,  Canek Fuentes-Hernandez ,  Bernard Kippelen

发明人： Do Kyung Hwang ,  Jungbae Kim ,  Canek Fuentes-Hernandez ,  Bernard Kippelen

IPC分类号： H01L35/24 ,  H01L51/05 ,  H01L51/00

CPC分类号： H01L51/0529 ,  H01L51/0053 ,  H01L51/0071 ,  H01L51/0533 ,  H01L51/0545

摘要： A field-effect transistor includes a gate, a source and a drain; a semiconductor layer between the source and the drain; and a gate insulator between the gate and the semiconductor layer. The gate insulator comprises a first layer adjoining the semiconductor layer; and a second layer. The first layer is formed from an amorphous fluoropolymer having a first dielectric constant and a first thickness. The second layer has a second dielectric constant and a second thickness. The first dielectric constant is smaller than 3, the first thickness is smaller than 200 nm, the second dielectric constant is higher than 5, and the second thickness is smaller than 500 nm.

摘要翻译： 场效应晶体管包括栅极，源极和漏极; 源极和漏极之间的半导体层; 以及栅极和半导体层之间的栅极绝缘体。 栅极绝缘体包括邻接半导体层的第一层; 和第二层。 第一层由具有第一介电常数和第一厚度的无定形含氟聚合物形成。 第二层具有第二介电常数和第二厚度。 第一介电常数小于3，第一厚度小于200nm，第二介电常数高于5，第二厚度小于500nm。