Abstract:
A gas discharge laser having an elongated cathode and an elongated anode with a porous insulating layer covering the anode discharge surface. A pulse power system provides electrical pulses at rates of at least 1 KHz. A blower circulates laser gas between the electrodes at speeds of at least 5 m/s and a heat exchanger is provided to remove heat produced by the blower and the discharges. In preferred embodiments at least a portion of the anode is comprised of lead, and fluorine ion sputtering of the anode surface creates the insulating layer (over the discharge surface of the anode) comprised in large part of lead fluoride. In a particular preferred embodiment the anode is fabricated in two parts, a first part having the general shape of a prior art anode with a trench shaped cavity at the top and a second part comprised of lead rich brass and disposed in the trench shape cavity.
Abstract:
The present invention provides a gas discharge laser having at least one long-life elongated electrode for producing at least 12 billion high voltage electric discharges in a fluorine containing laser gas. In a preferred embodiment at least one of the electrodes is comprised of a first material having a relatively low anode erosion rate and a second anode material having a relatively higher anode erosion rate. The first anode material is positioned at a desired anode discharge region of the electrode. The second anode material is located adjacent to the first anode material along at least two long sides of the first material. During operation of the laser erosion occurs on both materials but the higher erosion rate of the second material assures that any tendency of the discharge to spread onto the second material will quickly erode away the second material enough to stop the spread of the discharge. In a preferred embodiment the anode is as described above and the cathode is also a two-material electrode with the first material at the discharge region being C26000 brass and the second material being C36000 brass. A pulse power system provides electrical pulses at rates of at least 1 KHz. A blower circulates laser gas between the electrodes at speeds of at least 5 m/s and a heat exchanger is provided to remove heat produced by the blower and the discharges.
Abstract:
The present invention provides gas discharge laser systems capable of reliable long-term operation in a production line capacity at repetition rates in the range of 6,000 to 10,0000 pulses power second. Preferred embodiments are configured as KrF, ArF and F2 lasers used for light sources for integrated circuit lithography. Improvements include a modified high voltage power supply capable for charging an initial capacitor of a magnetic compression pulse power system to precise target voltages 6,000 to 10,0000 times per second and a feedback control for monitoring pulse energy and determining the target voltages on a pulse-by-pulse basis. Several techniques are disclosed for removing discharge created debris from the discharge region between the laser electrodes during the intervals between discharges. In one embodiment the width of the discharge region is reduced from about 3 mm to about 1 mm so that a gas circulation system designed for 4,000 Hz operation could be utilized for 10,000 Hz operation. In other embodiments the gas flow between the electrodes is increased sufficiently to permit 10,000 Hz operation with a discharge region width of 3 mm. To provide these substantial increased gas flow rates, Applicants have disclosed preferred embodiments utilize tangential forms of the prior art but with improved and more powerful motors and novel bearing designs. New bearing designs include both ceramic bearings and magnetic bearings. In other embodiments, some or all of the gas circulation power is provided with a blower located outside the laser chamber. The outside blower can be located in the laser cabinet or in separate location.
Abstract:
A wavemeter and method for measuring bandwidth for a high repetition rate gas discharge laser having an output laser bean comprising a pulsed output of greater than or equal to 15 mJ per pulse, sub-nanometer bandwidth tuning range pulses having a femptometer bandwidth precision and tens of femptometers bandwidth accuracy range, for measuring bandwidth on a pulse to pulse basis at pulse repetition rates of 4000Hz and above, is disclosed which may comprise a focusing lens having a focal length; an optical interferometer creating an interference fringe pattern; an optical detection means positioned at the focal length from the focusing lens; and a bandwidth calculator calculating bandwidth from the position of interference fringes in the interference fringe pattern incident on the optical detection means, defining a DID and a DOOD, the respective distances between a pair of first fringe borders and between a pair of second fringe borders in the interference pattern on an axis of the interference pattern, and according to the formula Δλ=λ0 [DOD2−DID2]/[8f2−D02], where λ0 is an assumed constant wavelength and D0=(DOD−DID)/2, and f is the focal length. The optical detector may be a photodiode array. The wavemember may have an optical interferometer having a slit function; the slit function and the focal length being selected to deliver to the optical detector the two innermost fringes of the optical interference ring pattern. The optical detector may comprise an array of pixels each having a height and width and the array having a total width; and an aperture at the optical input to the optical interferometer may selectively input to the optical interferometer a portion of a beam of light sufficient for the output of the etalon to illuminate the optical detector over the height of each respective pixel height and the total width. The optical interferometer may comprise an etalon having a slit function of 3 pm or less and a finesses of 25 or greater; and the focal length may be 1.5 meters. A second stage diffuser may be placed between the first stage diffuser and the etalon delivering a narrow cone of light to the etalon, and an aperture between the second stage diffuser and the etalon may deliver to the etalon a thin strip of the narrow cone of light.
Abstract:
The present invention provides long life optics for a modular, high repetition rate, ultraviolet gas discharge laser systems producing a high repetition rate high power output beam. The invention includes solutions to a surface damage problem discovered by Applicants on CaF2 optics located in high pulse intensity sections of the output beam of prototype laser systems. Embodiments include an enclosed and purged beam path with beam pointing control for beam delivery of billions of output laser pulses. Optical components and modules described herein are capable of controlling ultraviolet laser output pulses with wavelength less than 200 nm with average output pulse intensities greater than 1.75×106 Watts/cm2 and with peak intensity or greater 3.5×106 Watts/cm2 for many billions of pulses as compared to prior art components and modules which failed after only a few minutes in these pulse intensities. Techniques and components are disclosed for minimizing the potential for optical damage and for reducing the pulse energy density to less than 100×10−6 J/cm3. Important improvements described in this specification have been grouped into the following subject matter categories: (1) Solution to CaF2 surface damage discovered by Applicants, (2) description of a high power ArF MOPA laser system, (3) description of beam delivery units, (4) polarization considerations (5) a high speed water-cooled auto shutter energy detector module and (6) other improvements.
Abstract translation:本发明提供了用于产生高重复率高功率输出光束的模块化高重复率紫外线气体放电激光器系统的长寿命光学器件。 本发明包括由申请人发现的位于原型激光系统的输出光束的高脉冲强度部分中的CaF 2光学器件的表面损伤问题的解决方案。 实施例包括用于束传送数十亿个输出激光脉冲的光束指向控制的封闭和清除的光束路径。 本文所述的光学部件和模块能够控制波长小于200nm的紫外激光输出脉冲,平均输出脉冲强度大于1.75×6 /瓦/ cm 2,并且与 与在这些脉冲强度中仅仅几分钟之后失效的现有技术部件和模块相比,数十亿个脉冲的峰值强度或更大的3.5×10 6 / cm 2 / SUP。 公开了用于最小化光学损伤的可能性和将脉冲能量密度降低到小于100×10 -6 / cm 3的技术和部件。 本说明书中描述的重要改进已分为以下主题类别:(1)由申请人发现的CaF 2 2表面损伤的解决方案,(2)高功率ArF MOPA激光系统的描述( 3)光束传输单元的描述,(4)偏振考虑(5)高速水冷自动快门能量检测器模块和(6)其他改进。
Abstract:
A laser discharge unit is provided. The discharge unit includes an elongated electrode plate, an elongated high voltage electrode, and an elongated ground electrode. Both the high voltage electrode and the ground electrode are mounted to the electrode plate in a spaced-apart relationship with their longitudinal axis being substantially parallel to thereby define a gas discharge gap between the electrodes. The gas laser discharge unit may be removably mounted as a module into a gas laser such as an excimer laser.
Abstract:
Feedback timing control equipment and process for an injection seeded modular gas discharge laser. A preferred embodiment is a system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 to 10 mJ or greater for integrated outputs of about 20 to 40 Watts or greater. The feedback timing control is programmed to permit in some circumstances discharges timed so that no significant laser energy is output from the system. Use of this technique permits burst mode operation in which the first discharge of a burst is a no-output discharge so that timing parameters for each of the two chambers can be monitored before the first laser output pulse of the burst. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber.
Abstract:
An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in a F2 laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. The master oscillator is equipped with a line selection package for selecting the strongest F2 spectral line.
Abstract:
A helium purge for a grating based line narrowing device for minimizing thermal distortions in line narrowed lasers producing high energy laser beams at high repetition rates. Applicants have shown substantial improvement in performance with the uses of helium purge as compared to prior art nitrogen purges. In preferred embodiments a stream of helium gas is directed across the face of the grating. In other embodiments the purge gas pressure is reduced to reduce the optical effects of the hot gas layer.
Abstract:
A support unit (20a) for supporting an OPM holder (15a) so as to be vertical to the laser beam axis is disposed in the lower part of the OPM holder (15a). A rotary shaft (19) is inserted into the support unit (20a) and rotary shaft support unit (20b), and the OPM holder (15a) and DT base (17) are assembled together. Thus, a rotation support unit (200) is composed. The rotation support unit has a degree of freedom in the rotating direction of arrow (202). On the other hand, in the lower part of an RM holder (15b), a support bar (21) is provided. At the DT base (17), a rotating element (22) and a rotating element support unit (23) supporting the rotating element are composed so as to support the support bar. Thus, a slider structure (220) slidable in the optical axis direction is formed. The slider structure has a degree of freedom in the direction of arrow (222).