公开(公告)号：US20230284533A1

公开(公告)日：2023-09-07

申请号：US17998169

申请日：2021-04-28

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Kazutoshi NAGATA

IPC分类号： H10N30/072 ,  H03H9/02

CPC分类号： H10N30/072 ,  H03H9/02559 ,  H03H9/02574

摘要： Provided are a piezoelectric substrate and a manufacturing method thereof, by which bonding strength enough for forming a piezoelectric layer on an insulating substrate having a significantly small linear expansion coefficient can be obtained through ion implantation even by heat treatment at 100° C. or less. A piezoelectric composite substrate 10 having successively stacked insulating substrate 2, interlayer 3, and piezoelectric layer 1a is manufactured by laminating a piezoelectric single-crystal substrate surface having an ion implantation layer 1a thereon and an insulating substrate 2 having a linear expansion coefficient less than that of the piezoelectric single-crystal substrate 1 with a difference in a range of 14×10−6/K to 16×10−6/K via the interlayer 3 to obtain a bonded body 4, and after heat treatment, leaving the ion implantation layer 1a as a piezoelectric layer and releasing the remaining portion 1b of the piezoelectric single-crystal substrate from the bonded body 4. The insulating substrate 2 and the interlayer 3 are each made of a Si-containing amorphous material.

公开(公告)号：US11750171B2

公开(公告)日：2023-09-05

申请号：US16754811

申请日：2018-09-21

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Keiichirou Geshi ,  Masato Hasegawa ,  Shigeru Nakayama

IPC分类号： H03H9/02 ,  H03H3/08 ,  H03H9/25 ,  H10N30/06 ,  H10N30/072 ,  H10N30/086

CPC分类号： H03H9/02574 ,  H03H3/08 ,  H03H9/02559 ,  H03H9/02897 ,  H03H9/25 ,  H10N30/06 ,  H10N30/072 ,  H10N30/086

摘要： A ceramic substrate is formed of polycrystalline ceramic and has a supporting main surface. At the supporting main surface of the ceramic substrate, the mean of grain sizes of the polycrystalline ceramic is 0.5 μm or more and less than 15 μm and the standard deviation of the grain sizes is less than 1.5 times the mean.

公开(公告)号：US20230275559A1

公开(公告)日：2023-08-31

申请号：US18302440

申请日：2023-04-18

申请人： Soitec

发明人： Arnaud Castex ,  Daniel Delprat ,  Bernard Aspar ,  Ionut Radu

IPC分类号： H03H9/02 ,  H03H3/04 ,  H10N30/072 ,  H10N30/073 ,  H10N30/00 ,  H10N30/853 ,  H03H3/10

CPC分类号： H03H9/02834 ,  H03H9/02574 ,  H03H3/04 ,  H10N30/072 ,  H10N30/073 ,  H10N30/1051 ,  H10N30/8542 ,  H03H3/10 ,  Y10T29/42 ,  H10N30/082

摘要： The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.

公开(公告)号：US11736042B2

公开(公告)日：2023-08-22

申请号：US17043181

申请日：2019-04-02

申请人： KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

发明人： Jürgen Kosel ,  Mohammed Asadullah Khan

IPC分类号： H02N2/18 ,  H02N2/00 ,  H10N30/06 ,  H10N30/072 ,  H10N30/88 ,  H10N30/30 ,  H10N30/857

CPC分类号： H02N2/186 ,  H02N2/22 ,  H10N30/06 ,  H10N30/072 ,  H10N30/306 ,  H10N30/857 ,  H10N30/88

摘要： An energy producing device includes a piezoelectric layer having a first side and second side opposite of the first side, a first electrical contact arranged on the first side of the piezoelectric layer, a second electrical contact arranged on the second side of the piezoelectric layer, and a counter-layer arranged on the second electrical contact. The piezoelectric layer, first and second electrical contacts, and counter-layer form a beam having a neutral axis outside of the piezoelectric layer.

公开(公告)号：US11723279B2

公开(公告)日：2023-08-08

申请号：US16307749

申请日：2017-06-05

申请人： MITSUI CHEMICALS, INC. ,  MURATA MANUFACTURING CO., LTD.

发明人： Mitsunobu Yoshida ,  Kazuhiro Tanimoto ,  Katsuki Onishi ,  Shigeo Nishikawa ,  Masamichi Ando

IPC分类号： H01L41/193 ,  H01L41/08 ,  H01L41/113 ,  D01F6/62 ,  H10N30/857 ,  C08G63/08 ,  C08L67/04 ,  G01L1/16 ,  H10N30/08 ,  H10N30/20 ,  H10N30/30 ,  H10N30/60 ,  H10N30/072 ,  H10N30/084 ,  H10N30/088 ,  H10N30/098 ,  H10N30/00

CPC分类号： H10N30/857 ,  C08G63/08 ,  C08L67/04 ,  D01F6/625 ,  G01L1/16 ,  H10N30/072 ,  H10N30/08 ,  H10N30/084 ,  H10N30/088 ,  H10N30/098 ,  H10N30/1061 ,  H10N30/20 ,  H10N30/30 ,  H10N30/302 ,  H10N30/60

摘要： The present invention provides: a piezoelectric substrate which includes a first piezoelectric body having an elongated shape and helically wound in one direction, and which does not include a core material, in which the first piezoelectric body includes a helical chiral polymer (A) having an optical activity; in which the length direction of the first piezoelectric body is substantially parallel to the main direction of orientation of the helical chiral polymer (A) included in the first piezoelectric body; and in which the first piezoelectric body has a degree of orientation F, as measured by X-ray diffraction according to the following Equation (a), within the range of 0.5 or more but less than 1.0:

degree of orientation F=(180°−α)/180°  (a)

(in which α represents the half-value width of the peak derived from the orientation).

公开(公告)号：US11711065B2

公开(公告)日：2023-07-25

申请号：US17141065

申请日：2021-01-04

申请人： Soitec

发明人： Marcel Broekaart ,  Thierry Barge ,  Pascal Guenard ,  Ionut Radu ,  Eric Desbonnets ,  Oleg Kononchuk

IPC分类号： A61B5/1459 ,  A61B5/00 ,  A61B5/145 ,  H03H9/02 ,  H03H3/02 ,  H10N30/072 ,  H10N30/87 ,  H10N39/00 ,  H03H3/04 ,  H03H3/10 ,  H03H9/13 ,  H03H9/145 ,  H03H9/17 ,  H03H9/25 ,  H03H9/56 ,  H03H9/64 ,  H10N30/085

CPC分类号： H03H9/02834 ,  A61B5/1459 ,  A61B5/14546 ,  A61B5/685 ,  H03H3/02 ,  H03H3/04 ,  H03H3/10 ,  H03H9/02102 ,  H03H9/02574 ,  H03H9/13 ,  H03H9/145 ,  H03H9/17 ,  H03H9/25 ,  H03H9/56 ,  H03H9/6489 ,  H10N30/072 ,  H10N30/87 ,  H10N39/00 ,  A61B2562/0204 ,  H03H2003/0407 ,  H10N30/085

摘要： A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.

公开(公告)号：US20230188112A1

公开(公告)日：2023-06-15

申请号：US18167702

申请日：2023-02-10

申请人： FUJIAN JING'AN OPTOELECTRONICS CO., LTD.

发明人： Yenfu LIN ,  Zhonghe LIN ,  Shengyu YANG ,  Minghui FANG ,  Shihwei HUANG

IPC分类号： H03H9/02 ,  H03H3/08 ,  H03H9/64 ,  H10N30/072

CPC分类号： H03H9/02574 ,  H03H3/08 ,  H03H9/64 ,  H03H9/02834 ,  H10N30/072

摘要： A method for making a composite substrate of a filter includes: processing a base substrate to form a centrally protruding structure having a height that decreases in a radially outward direction from a center of the base substrate to an outer periphery of the base substrate; connecting a first side of the base substrate having the centrally protruding structure to a piezoelectric layer so as to obtain a multilayer substrate; and thinning the piezoelectric layer of the multilayer substrate followed by polishing a surface of the piezoelectric layer.

公开(公告)号：US20230163743A1

公开(公告)日：2023-05-25

申请号：US18157881

申请日：2023-01-23

申请人： Akoustis, Inc.

发明人： Jeffrey B. Shealy ,  Mary Winters ,  Craig Moe

IPC分类号： H03H3/02 ,  H03H9/13 ,  H03H9/17 ,  H03H9/10 ,  H03H9/05 ,  H03H9/02 ,  H03H9/54 ,  H10N30/02 ,  H10N30/06 ,  H10N30/077 ,  H10N30/85 ,  H10N30/086 ,  H10N30/88 ,  H10N30/87 ,  H10N30/00

CPC分类号： H03H3/02 ,  H03H9/13 ,  H03H9/105 ,  H03H9/173 ,  H03H9/175 ,  H03H9/177 ,  H03H9/0523 ,  H03H9/547 ,  H03H9/02015 ,  H03H9/02118 ,  H10N30/02 ,  H10N30/06 ,  H10N30/077 ,  H10N30/85 ,  H10N30/086 ,  H10N30/88 ,  H10N30/875 ,  H10N30/877 ,  H10N30/10513 ,  H03H2003/021 ,  H03H2003/025 ,  H10N30/072 ,  Y10T29/42

摘要： An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device. An RF piezoelectric resonator device can be on the substrate including the ScAlN layer sandwiched between a top electrode and a bottom electrode of the RF piezoelectric resonator device to provide a piezoelectric resonator for the RF piezoelectric resonator device.

公开(公告)号：US11659769B2

公开(公告)日：2023-05-23

申请号：US16497052

申请日：2018-03-20

申请人： TDK CORPORATION

发明人： Masakazu Hirose ,  Yuiko Hirose ,  Hiroki Katoh

IPC分类号： H01L41/187

CPC分类号： H10N30/8542 ,  H10N30/072 ,  H10N30/50 ,  H10N30/097

摘要： A piezoelectric composition including manganese and a complex oxide having a perovskite structure represented by a general formula ABO3, wherein an A site element in the ABO3 is potassium or potassium and sodium, a B site element in the ABO3 is niobium, a concentration distribution of the manganese has a variation, and the variation shows a CV value of 35% or more and 440% or less.

公开(公告)号：US12108678B2

公开(公告)日：2024-10-01

申请号：US17649470

申请日：2022-01-31

申请人： Soitec

发明人： Oleg Kononchuk ,  Eric Butaud ,  Eric Desbonnets

IPC分类号： H01L41/08 ,  H03H3/02 ,  H03H9/00 ,  H03H9/02 ,  H10N30/00 ,  H10N30/072

CPC分类号： H10N30/072 ,  H03H3/02 ,  H03H9/0009 ,  H03H9/02047 ,  H03H9/02574 ,  H10N30/708

摘要： The disclosure relates to a hybrid structure for a surface-acoustic-wave device comprising a useful layer of piezoelectric material joined to a carrier substrate having a thermal expansion coefficient lower than that of the useful layer; the hybrid structure comprising an intermediate layer located between the useful layer and the carrier substrate, the intermediate layer being a structured layer formed from at least two different materials comprising a plurality of periodic motifs in the plane of the intermediate layer.