公开(公告)号：US06936551B2

公开(公告)日：2005-08-30

申请号：US10428374

申请日：2003-05-01

Applicant: Farhad Moghadam ,  Jun Zhao ,  Timothy Weidman ,  Rick J. Roberts ,  Li-Qun Xia ,  Alexandros T. Demos

Inventor： Farhad Moghadam ,  Jun Zhao ,  Timothy Weidman ,  Rick J. Roberts ,  Li-Qun Xia ,  Alexandros T. Demos

IPC: B05D3/06 ,  B05D7/24 ,  C23C16/26 ,  C23C16/40 ,  C23C16/56 ,  H01L21/3105 ,  H01L21/312 ,  H01L21/31 ,  H01L21/469

CPC classification number: B05D1/60 ,  B05D3/068 ,  B05D3/141 ,  B05D5/08 ,  B05D5/12 ,  C08G77/50 ,  C23C16/26 ,  C23C16/401 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02351 ,  H01L21/0276 ,  H01L21/0277 ,  H01L21/0337 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/3146 ,  H01L21/3148 ,  H01L21/316 ,  H01L21/31625 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76829

Abstract: One embodiment of the present invention is a method for fabricating a low-k dielectric film that includes steps of: (a) chemical vapor depositing a lower-k dielectric film; and (b) e-beam treating the lower-k dielectric film.

Abstract translation: 本发明的一个实施例是一种制造低k电介质膜的方法，包括以下步骤：（a）化学气相沉积低k电介质膜; 和（b）电子束处理低k电介质膜。

公开(公告)号：US06896955B2

公开(公告)日：2005-05-24

申请号：US10219164

申请日：2002-08-13

Applicant: Robert P. Mandal ,  Alexandros T. Demos ,  Timothy Weidman ,  Michael P. Nault ,  Nikolaos Bekiaris ,  Scott J. Weigel ,  Lee A. Senecal ,  James E. MacDougal ,  Hareesh Thridandam

Inventor： Robert P. Mandal ,  Alexandros T. Demos ,  Timothy Weidman ,  Michael P. Nault ,  Nikolaos Bekiaris ,  Scott J. Weigel ,  Lee A. Senecal ,  James E. MacDougal ,  Hareesh Thridandam

IPC: B05D5/12 ,  B05D7/24 ,  C01B33/16 ,  C09D5/25 ,  C09D183/02 ,  H01L21/20 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  B32B3/00

CPC classification number: H01L21/02126 ,  C01B33/16 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695 ,  Y10S438/96 ,  Y10T428/249953 ,  Y10T428/249969

Abstract: A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an amine additive which forms an ionic ammonium type salt in the acidic precursor solution. Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5, appropriate mechanical properties, and minimal levels of alkali metal impurities. In one embodiment, this is achieved by purifying the surfactant and adding ionic or amine additives such as tetraalkylammonium salts and amines to the stock precursor solution. In some embodiments, the ionic additive is a compound chosen from a group of cationic additives of the general composition [NR(CH3)3]+A−, where R is a hydrophobic ligand of chain length 1 to 24, including tetramethylammonium and cetyltrimethylammonium, and A− is an anion, which may be chosen from the group consisting essentially of formate, nitrate, oxalate, acetate, phosphate, carbonate, and hydroxide and combinations thereof. Tetramethylammonium salts, or more generally tetraalkylammonium salts, or tetraorganoammonium salts or organoamines in acidic media are added to surfactant templated porous oxide precursor formulations to increase the ionic content, replacing alkali ion impurities (sodium and potassium) removed during surfactant purification, but which are found to exhibit beneficial effects in promoting the formation of the resulting dielectric.

Abstract translation: 一种使用溶胶 - 凝胶方法沉积多孔氧化硅基膜的方法，该方法使用前体溶液制剂，其包含纯化的非离子表面活性剂和其它组分中的添加剂，其中添加剂是形成离子的离子添加剂或胺添加剂 铵型盐在酸性前体溶液中。 使用这种前体溶液制剂可以形成介电常数小于2.5，适当的机械性能和最低水平的碱金属杂质的薄膜。 在一个实施方案中，这通过纯化表面活性剂并将离子或胺添加剂例如四烷基铵盐和胺添加到原料前体溶液中来实现。 在一些实施方案中，离子添加剂是选自一般组成的阳离子添加剂组合物[NR（CH 3）3） 其中R是链长1至24的疏水性配体，包括四甲基铵和十六烷基三甲基铵，并且A是一种阴离子，其可以选自下组： 基本上由甲酸盐，硝酸盐，草酸盐，乙酸盐，磷酸盐，碳酸盐和氢氧化物组成。 在表面活性剂模板化的多孔氧化物前体制剂中加入四甲基铵盐或更一般的四烷基铵盐或四官能铵盐或有机胺，以增加离子含量，代替在表面活性剂纯化过程中除去的碱离子杂质（钠和钾），但发现 以促进所形成的电介质的形成。

公开(公告)号：US06890403B2

公开(公告)日：2005-05-10

申请号：US10189080

申请日：2002-07-02

Applicant: Jeff S. Cheung ,  Alexandros T. Demos

Inventor： Jeff S. Cheung ,  Alexandros T. Demos

IPC: C23C16/52 ,  H01J37/32 ,  H01L21/316 ,  C23F1/00

CPC classification number: C23C16/463 ,  C23C16/466 ,  C23C16/52 ,  H01J37/32431 ,  H01J2237/2001 ,  H01L21/31612

Abstract: A process for controlling the temperature of a substrate in a plasma processing reactor chamber comprising flowing a cooling gas to a substrate at a flow pressure; and determining a temperature of the substrate. The difference between the temperature of the substrate and a desired temperature of the substrate is determined; and a pressure by which the flow pressure of the cooling gas is to be adjusted is determined. The flow pressure of the cooling gas to the substrate is adjusted in accordance with the determined pressure.

Abstract translation: 一种用于控制等离子体处理反应器室中的衬底的温度的方法，包括以流动压力将冷却气体流到衬底; 并确定衬底的温度。 确定基板的温度与基板的期望温度之间的差; 并且确定要调节冷却气体的流动压力的压力。 根据确定的压力调节冷却气体到基板的流动压力。

公开(公告)号：US06878644B2

公开(公告)日：2005-04-12

申请号：US10430942

申请日：2003-05-06

Applicant: Zhenjiang Cui ,  Rick J. Roberts ,  Michael S. Cox ,  Jun Zhao ,  Khaled Elsheref ,  Alexandros T. Demos

Inventor： Zhenjiang Cui ,  Rick J. Roberts ,  Michael S. Cox ,  Jun Zhao ,  Khaled Elsheref ,  Alexandros T. Demos

IPC: H01L21/3105 ,  H01L21/762 ,  H01L21/31 ,  H01L21/461 ,  H01L21/76

CPC classification number: H01L21/76229 ,  H01L21/3105

Abstract: A method of filling a plurality of trenches etched in a substrate. In one embodiment the method includes depositing a layer of spin-on glass material over the substrate and into the plurality of trenches; curing the layer of spin-on glass material by exposing the spin-on glass material to electron beam radiation at a first temperature for a first period and subsequently exposing the spin-on glass material to an electron beam at a second temperature for a second period, where the second temperature is greater than the first temperature. The method concludes by depositing a layer of silica glass over the cured spin-on glass layer using a chemical vapor deposition technique.

Abstract translation: 一种填充蚀刻在衬底中的多个沟槽的方法。 在一个实施例中，该方法包括在衬底上沉积旋涂玻璃材料层并进入多个沟槽; 通过在第一温度下将自旋玻璃材料暴露于电子束辐射第一周期，随后将旋涂玻璃材料暴露于第二温度下的电子束第二周期来固化旋涂玻璃材料层 ，其中第二温度大于第一温度。 该方法的结论是通过使用化学气相沉积技术在固化的旋涂玻璃层上沉积二氧化硅玻璃层。

公开(公告)号：US06818289B2

公开(公告)日：2004-11-16

申请号：US10263254

申请日：2002-10-02

Applicant: James Edward MacDougall ,  Kevin Ray Heier ,  Scott Jeffrey Weigel ,  Timothy W. Weidman ,  Alexandros T. Demos ,  Nikolaos Bekiaris ,  Yunfeng Lu ,  Michael P Nault ,  Robert Parkash Mandal

Inventor： James Edward MacDougall ,  Kevin Ray Heier ,  Scott Jeffrey Weigel ,  Timothy W. Weidman ,  Alexandros T. Demos ,  Nikolaos Bekiaris ,  Yunfeng Lu ,  Michael P Nault ,  Robert Parkash Mandal

IPC: B32B326

CPC classification number: H01L21/02126 ,  C08L53/00 ,  C09D153/00 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695 ,  Y10T428/249953 ,  Y10T428/249967

Abstract: A process provides a ceramic film, such as a mesoporous silica film, on a substrate, such as a silicon wafer. The process includes preparing a film-forming fluid containing a ceramic precursor, a catalyst, a surfactant and a solvent, depositing the film-forming fluid on the substrate, and removing the solvent from the film-forming fluid on the substrate to produce the ceramic film on the substrate. The ceramic film has a dielectric constant below 2.3, a halide content of less than 1 ppm and a metal content of less than 500 ppm, making it useful for current and future microelectronics applications.

Abstract translation: 一种方法在诸如硅晶片的基底上提供陶瓷膜，例如介孔二氧化硅膜。 该方法包括制备含有陶瓷前体，催化剂，表面活性剂和溶剂的成膜流体，将成膜流体沉积在基材上，并从基材上的成膜流体中除去溶剂以制备陶瓷 薄膜在基材上。 陶瓷膜的介电常数低于2.3，卤化物含量小于1ppm，金属含量小于500ppm，使其适用于当前和未来的微电子应用。

公开(公告)号：US06660662B2

公开(公告)日：2003-12-09

申请号：US09771203

申请日：2001-01-26

Applicant: Tetsuya Ishikawa ,  Alexandros T. Demos ,  Seon-Mee Cho ,  Feng Gao ,  Kaveh F. Niazi ,  Michio Aruga

Inventor： Tetsuya Ishikawa ,  Alexandros T. Demos ,  Seon-Mee Cho ,  Feng Gao ,  Kaveh F. Niazi ,  Michio Aruga

IPC: H01L2144

CPC classification number: H01J37/3244 ,  C23C16/455

Abstract: A method is provided for depositing a thin film on a substrate in a process chamber with reduced incidence of plasma charge damage. A process gas containing a precursor gases suitable for forming a plasma is flowed into a process chamber, and a plasma is generated from the process gas to deposit the thin film on the substrate. The precursor gases are flowed into the process chamber such that the thin film is deposited at the center of the substrate more rapidly than at an edge of the substrate.

Abstract translation: 提供了一种用于在处理室中的衬底上沉积薄膜以降低等离子体电荷损伤的发生率的方法。 含有适于形成等离子体的前体气体的工艺气体流入处理室，并且从处理气体产生等离子体以将薄膜沉积在基板上。 前体气体流入处理室，使得薄膜比衬底的边缘更快地沉积在衬底的中心。

公开(公告)号：US06592980B1

公开(公告)日：2003-07-15

申请号：US09711573

申请日：2000-11-13

Applicant: James Edward MacDougall ,  Kevin Ray Heier ,  Scott Jeffrey Weigel ,  Timothy W. Weidman ,  Alexandros T. Demos ,  Nikolaos Bekiaris ,  Yunfeng Lu ,  Michael P. Nault ,  Robert Parkash Mandal

Inventor： James Edward MacDougall ,  Kevin Ray Heier ,  Scott Jeffrey Weigel ,  Timothy W. Weidman ,  Alexandros T. Demos ,  Nikolaos Bekiaris ,  Yunfeng Lu ,  Michael P. Nault ,  Robert Parkash Mandal

IPC: B32B326

CPC classification number: H01L21/02126 ,  C08L53/00 ,  C09D153/00 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695 ,  Y10T428/249953 ,  Y10T428/249967

Abstract: A process provides a ceramic film, such as a mesoporous silica film, on a substrate, such as a silicon wafer. The process includes preparing a film-forming fluid containing a ceramic precursor, a catalyst, a surfactant and a solvent, depositing the film-forming fluid on the substrate, and removing the solvent from the film-forming fluid on the substrate to produce the ceramic film on the substrate. The ceramic film has a dielectric constant below 2.3, a halide content of less than 1 ppm and a metal content of less than 500 ppm, making it useful for current and future microelectronics applications.

公开(公告)号：US08877659B2

公开(公告)日：2014-11-04

申请号：US13903483

申请日：2013-05-28

Applicant: Kelvin Chan ,  Alexandros T. Demos

Inventor： Kelvin Chan ,  Alexandros T. Demos

IPC: H01L21/00 ,  H01L21/263 ,  H01L21/3105

CPC classification number: H01L21/02348 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/2636 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826

Abstract: A method for repairing and lowering the dielectric constant of low-k dielectric layers used in semiconductor fabrication is provided. In one implementation, a method of repairing a damaged low-k dielectric layer comprising exposing the porous low-k dielectric layer to a vinyl silane containing compound and optionally exposing the porous low-k dielectric layer to an ultraviolet (UV) cure process.

Abstract translation: 提供了一种用于修复和降低半导体制造中使用的低k电介质层的介电常数的方法。 在一个实施方案中，修复损坏的低k电介质层的方法，包括将多孔低k电介质层暴露于含乙烯基硅烷的化合物，并任选地将多孔低k电介质层暴露于紫外（UV）固化过程。

公开(公告)号：US08492170B2

公开(公告)日：2013-07-23

申请号：US13093351

申请日：2011-04-25

Applicant: Bo Xie ,  Alexandros T. Demos ,  Kang Sub Yim ,  Thomas Nowak ,  Kelvin Chan

Inventor： Bo Xie ,  Alexandros T. Demos ,  Kang Sub Yim ,  Thomas Nowak ,  Kelvin Chan

IPC: H01L21/30

CPC classification number: H01L21/3105 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826

Abstract: Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and silylation compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.

Abstract translation: 提供修复损坏的低k膜的方法。 在薄膜的处理期间，例如在蚀刻，灰化和平坦化期间，低k膜的损伤发生。 低k膜的处理导致水存储在膜的孔中，并进一步在低k膜结构中形成亲水性化合物。 包含紫外线（UV）辐射和甲硅烷基化合物的修复过程从孔中除去水分，并从低k膜结构中进一步除去亲水性化合物。

公开(公告)号：US20130177706A1

公开(公告)日：2013-07-11

申请号：US13719047

申请日：2012-12-18

Applicant: Sanjeev Baluja ,  Alexandros T. Demos ,  Bo Xie ,  Juan Carlos Rocha-Alvarez

Inventor： Sanjeev Baluja ,  Alexandros T. Demos ,  Bo Xie ,  Juan Carlos Rocha-Alvarez

IPC: B05D3/06

CPC classification number: B05D3/066 ,  C23C16/4404 ,  C23C16/4405

Abstract: Methods for depositing a carbon-based seasoning layer on exposed surfaces of the optical components within a UV processing chamber are disclosed. In one embodiment, the method includes flowing a carbon-containing precursor radially inwardly across exposed surfaces of optical components within the thermal processing chamber from a circumference of the optical components, exposing the carbon-containing precursor to a thermal radiation emitted from a heating source to form a carbon-based seasoning layer on the exposed surfaces of the optical components, exposing the carbon-based seasoning layer to ozone, wherein the ozone is introduced into the processing chamber by flowing the ozone radially inwardly across exposed surfaces of optical components from the circumference of the optical components, heating the optical components to a temperature of about 400° C. or above while flowing the ozone to remove the carbon-based seasoning layer from exposed surfaces of the optical components.

Abstract translation: 公开了在UV处理室内的光学部件的暴露表面上沉积碳基调味剂层的方法。 在一个实施例中，该方法包括使含碳前驱体从光学部件的圆周径向向内流过热处理室内的光学部件的暴露表面，将含碳前体暴露于从加热源发射的热辐射至 在光学部件的暴露表面上形成碳基调味剂层，将碳基调味剂层暴露于臭氧，其中臭氧通过径向向内流过来自圆周的光学部件的暴露表面而将臭氧引入处理室 的光学部件，将光学部件加热至约400℃以上的温度，同时使臭氧流动，以从光学部件的露出表面除去碳基调味剂层。