公开(公告)号：US06946686B2

公开(公告)日：2005-09-20

申请号：US10786667

申请日：2004-02-25

申请人： Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

发明人： Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

IPC分类号： B23K26/00 ,  B23K101/40 ,  H01L21/00 ,  H01L21/20 ,  H01L21/302 ,  H01L21/8222 ,  H01L29/06 ,  H01L33/00 ,  H01L33/20 ,  H01L33/32 ,  H01L33/40

CPC分类号： H01L33/24 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095

摘要： A first conductive type layer having a band gap energy smaller than that of an under growth layer formed on a substrate is formed by selective growth from an opening portion formed in the under growth layer, and an active layer and a second conductive type layer are stacked on the first conductive type layer, to form a stacked structure. When such a stacked structure for forming a semiconductor device is irradiated with laser beams having an energy value between the band gap energies of the under growth layer and the first conductive type layer, abrasion occurs at a first conductive type layer side interface between the under growth layer and the first conductive type layer, so that the stacked structure is peeled from the substrate and the under growth layer and simultaneously isolated from another stacked structure for forming another semiconductor device. Since the first conductive layer has good crystallinity and is suitable for formation of an electrode thereon, an electrode can be efficiently formed on the back surface of the first conductive type layer of the peeled stacked structure.

公开(公告)号：US06927164B2

公开(公告)日：2005-08-09

申请号：US10211419

申请日：2002-08-02

申请人： Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

发明人： Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

IPC分类号： B23K26/00 ,  B23K101/40 ,  H01L21/00 ,  H01L21/20 ,  H01L21/302 ,  H01L21/8222 ,  H01L29/06 ,  H01L33/00 ,  H01L33/20 ,  H01L33/32 ,  H01L33/40 ,  H01L21/44

CPC分类号： H01L33/24 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095

摘要： A first conductive type layer having a band gap energy smaller than that of an under growth layer formed on a substrate is formed by selective growth from an opening portion formed in the under growth layer, and an active layer and a second conductive type layer are stacked on the first conductive type layer, to form a stacked structure. When such a stacked structure for forming a semiconductor device is irradiated with laser beams having an energy value between the band gap energies of the under growth layer and the first conductive type layer, abrasion occurs at a first conductive type layer side interface between the under growth layer and the first conductive type layer, so that the stacked structure is peeled from the substrate and the under growth layer and simultaneously isolated from another stacked structure for forming another semiconductor device. Since the first conductive layer has good crystallinity and is suitable for formation of an electrode thereon, an electrode can be efficiently formed on the back surface of the first conductive type layer of the peeled stacked structure.

摘要翻译： 通过从形成在下部生长层的开口部分选择性地生长，形成具有比形成在基板上的下部生长层的带隙能量小的带隙能量的第一导电型层，并且层叠有源层和第二导电类型层 在第一导电类型层上形成堆叠结构。 当这种用于形成半导体器件的层叠结构被照射具有在生长下层和第一导电类型层的带隙能之间的能量值的激光束时，在下部生长的第一导电型层侧界面处发生磨损 层和第一导电型层，使得层叠结构从基板和下层生长层剥离，并且同时与用于形成另一半导体器件的另一堆叠结构隔离。 由于第一导电层具有良好的结晶度并且适于在其上形成电极，因此可以在剥离的堆叠结构的第一导电类型层的背面上有效地形成电极。

公开(公告)号：US20050167676A1

公开(公告)日：2005-08-04

申请号：US11096381

申请日：2005-03-31

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

IPC分类号： H01L21/205 ,  H01L33/00 ,  H01L33/10 ,  H01L33/16 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L29/15

CPC分类号： H01L33/24 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/48137 ,  H01L2224/48139

摘要： Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

公开(公告)号：US20050161688A1

公开(公告)日：2005-07-28

申请号：US11086165

申请日：2005-03-22

申请人： Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

发明人： Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

IPC分类号： C30B25/02 ,  H01L21/205 ,  H01L21/338 ,  H01L29/778 ,  H01L29/812 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343 ,  H01L29/22

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007

摘要： Disclosed herein is a process for production of a nitride semiconductor device having good characteristic properties (such as light-emitting performance). The process does not thermally deteriorate the active layer while nitride semiconductor layers are being grown on the active layer. The process consists of forming an active layer on a substrate by vapor phase growth at a first growth temperature, and subsequently forming thereon one or more nitride semiconductor layers at a temperature which is lower than said first growth temperature plus 250° C. The process yields a nitride semiconductor device in which the active layer retains its good crystal properties, without nitrogen voids and metallic indium occurring therein due to breakage of In—N bonds.

摘要翻译： 本文公开了一种具有良好特性（如发光性能）的氮化物半导体器件的制造方法。 该工艺不会在活性层上生长氮化物半导体层而使活性层热劣化。 该方法包括在第一生长温度下通过气相生长在基底上形成活性层，随后在低于第一生长温度加上250℃的温度下形成一个或多个氮化物半导体层。该方法产生 氮化物半导体器件，其中活性层保持其良好的晶体性质，由于In-N键的断裂，其中不存在氮空隙和金属铟。

公开(公告)号：US06858081B2

公开(公告)日：2005-02-22

申请号：US10345684

申请日：2003-01-16

申请人： Goshi Biwa ,  Hiroyuki Okuyama

发明人： Goshi Biwa ,  Hiroyuki Okuyama

IPC分类号： C30B25/02 ,  H01L21/20 ,  H01L21/205 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32 ,  C30B25/04 ,  C30B25/16

CPC分类号： H01L33/24 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02587 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639

摘要： In a selective growth method, growth interruption is performed at the time of selective growth of a crystal layer on a substrate. Even if the thickness distribution of the crystal layer becomes non-uniform at the time of growth of the crystal layer, the non-uniformity of the thickness distribution of the crystal layer can be corrected by inserting the growth interruption. As a result of growth interruption, an etching rate at a thick portion becomes higher than that at a thin portion, to eliminate the difference in thickness between the thick portion and the thin portion, thereby solving the problem associated with degradation of characteristics due to a variation in thickness of the crystal layer, for example, an active layer. The selective growth method is applied to fabrication of a semiconductor light emitting device including an active layer as a crystal layer formed on a crystal layer having a three-dimensional shape by selective growth.

摘要翻译： 在选择性生长方法中，在衬底上的晶体层的选择性生长时进行生长中断。 即使在晶体层生长时晶体层的厚度分布变得不均匀，也可以通过插入生长中断来校正晶体层的厚度分布的不均匀性。 作为生长中断的结果，厚部分的蚀刻速率变得比薄部分的蚀刻速率高，以消除厚部分和薄部分之间的厚度差，从而解决与由于 晶体层的厚度变化，例如活性层。 选择生长方法用于制造半导体发光器件，该半导体发光器件包括通过选择性生长形成在具有三维形状的晶体层上的作为晶体层的有源层。

公开(公告)号：US06818463B2

公开(公告)日：2004-11-16

申请号：US10126240

申请日：2002-04-18

申请人： Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

发明人： Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

IPC分类号： H01L2120

CPC分类号： C30B29/40 ,  C30B25/02 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02521 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/20 ,  H01L33/32

摘要： Nitride semiconductor devices and methods of producing same are provided. The present invention includes forming a nitride semiconductor layer on a base body of the nitride semiconductor under selective and controlled crystal growth conditions. For example, the crystal growth rate, the supply of crystal growth source material and/or the crystal growth area can be varied over time, thus resulting in a nitride semiconductor device with enhanced properties.

公开(公告)号：US08686447B2

公开(公告)日：2014-04-01

申请号：US13402137

申请日：2012-02-22

申请人： Katsuhiro Tomoda ,  Naoki Hirao ,  Goshi Biwa

发明人： Katsuhiro Tomoda ,  Naoki Hirao ,  Goshi Biwa

IPC分类号： H01L33/00

CPC分类号： H01L25/0753 ,  H01L33/20 ,  H01L33/44 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light emitting unit including plural kinds of light emitting elements with different light emitting wavelengths, wherein, among the light emitting elements, at least one kind of light emitting element includes a semiconductor layer configured by laminating a first conductive layer, an active layer and a second conductive layer and having a side surface exposed by the first conductive layer, the active layer and the second conductive layer; a first electrode electrically connected to the first conductive layer; a second electrode electrically connected to the second conductive layer; a first insulation layer contacting at least an exposed surface of the active layer in the surface of the semiconductor layer; and a metal layer contacting at least a surface, which is opposite to the exposed surface of the active layer, in the surface of the first insulation layer, and electrically separated from the first electrode and the second electrode.

摘要翻译： 一种发光单元，包括具有不同发光波长的多种发光元件，其中，在发光元件中，至少一种发光元件包括通过层叠第一导电层，有源层和 第二导电层，并且具有由第一导电层，有源层和第二导电层暴露的侧表面; 电连接到第一导电层的第一电极; 电连接到第二导电层的第二电极; 第一绝缘层，与所述半导体层的表面中的所述有源层的至少暴露表面接触; 以及在所述第一绝缘层的表面中至少与所述有源层的暴露表面相对的表面接触的金属层，并且与所述第一电极和所述第二电极电隔离。

公开(公告)号：US08168986B2

公开(公告)日：2012-05-01

申请号：US12408106

申请日：2009-03-20

申请人： Ippei Nishinaka ,  Goshi Biwa ,  Hiroki Naito

发明人： Ippei Nishinaka ,  Goshi Biwa ,  Hiroki Naito

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  G02F1/133603 ,  H01L33/02 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： A GaN-based semiconductor light-emitting element is provided and includes a first GaN-based compound semiconductor layer; an active layer having a multi-quantum well structure; and a second GaN-based compound semiconductor layer. At least one of barrier layers constituting the active layer is composed of a varying-composition barrier layer, and the composition of the varying-composition barrier layer varies in the thickness direction thereof so that the band-gap energy in a region of the varying-composition barrier layer, the region being adjacent to a boundary between a well layer disposed closer to the second GaN-based compound semiconductor layer and the varying-composition barrier layer, is lower than that in a region of the varying-composition barrier layer, the region being adjacent to a boundary between a well layer disposed closer to the first GaN-based compound semiconductor layer and the varying-composition barrier layer.

摘要翻译： 提供GaN基半导体发光元件，并且包括第一GaN基化合物半导体层; 具有多量子阱结构的有源层; 和第二GaN基化合物半导体层。 构成有源层的阻挡层中的至少一个由变化的组成阻挡层构成，并且变化组成阻挡层的组成在其厚度方向上变化，使得变化组成阻挡层的区域中的带隙能量， 组成阻挡层，与设置在更靠近第二GaN基化合物半导体层的阱层和变化组成阻挡层之间的边界相邻的区域低于在变化组成阻挡层的区域中的边界， 区域与设置在更靠近第一GaN基化合物半导体层的阱层和变化组成阻挡层之间的边界相邻。

公开(公告)号：US07948454B2

公开(公告)日：2011-05-24

申请号：US11891216

申请日：2007-08-09

申请人： Goshi Biwa

发明人： Goshi Biwa

IPC分类号： G09G3/30 ,  G09G3/32 ,  H01L29/06

CPC分类号： H01L33/16 ,  G09G3/3216 ,  G09G3/3225 ,  G09G2320/0233 ,  G09G2320/0626 ,  H01L33/32 ,  H04N9/3155 ,  H05B33/0857

摘要： A method for driving a light-emitting diode includes the step of modulating the luminance of the light-emitting diode with current density within the range of 20 A/cm2 or less. The light-emitting diode includes a p-type layer, an n-type layer, and a light-emitting layer disposed therebetween and having an indium-containing quantum well structure. Each of the p-type layer, the n-type layer, and the light-emitting layer includes a nitride-based group III-V compound semiconductor crystal having a wurtzite structure. The light-emitting layer has a main surface inclined at an angle of 0.25° to 2° with respect to a c-plane.

摘要翻译： 用于驱动发光二极管的方法包括以20A / cm 2以下的电流密度调制发光二极管的亮度的步骤。 发光二极管包括p型层，n型层和位于它们之间并具有含铟量子阱结构的发光层。 p型层，n型层和发光层中的每一个包括具有纤锌矿结构的氮化物基III-V族化合物半导体晶体。 发光层的主表面相对于c面以0.25°〜2°的角度倾斜。

公开(公告)号：US07928452B2

公开(公告)日：2011-04-19

申请号：US12402160

申请日：2009-03-11

申请人： Hiroki Naito ,  Hiroyuki Okuyama ,  Goshi Biwa ,  Ippei Nishinaka

发明人： Hiroki Naito ,  Hiroyuki Okuyama ,  Goshi Biwa ,  Ippei Nishinaka

IPC分类号： H01L33/00

CPC分类号： H01L33/025 ,  H01L33/04 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： A GaN-based semiconductor light-emitting element includes a first GaN-based compound semiconductor layer of n-conductivity type, an active layer, a second GaN-based compound semiconductor layer of p-conductivity type, a first electrode electrically connected to the first GaN-based compound semiconductor layer, a second electrode electrically connected to the second GaN-based compound semiconductor layer, an impurity diffusion-preventing layer composed of an undoped GaN-based compound semiconductor, the impurity diffusion-preventing layer preventing a p-type impurity from diffusing into the active layer, and a laminated structure or a third GaN-based compound semiconductor layer of p-conductivity type. The impurity diffusion-preventing layer and the laminated structure or the third GaN-based compound semiconductor layer of p-conductivity type are disposed, between the active layer and the second GaN-based compound semiconductor layer, in that order from the active layer side.

摘要翻译： GaN基半导体发光元件包括n导电型的第一GaN基化合物半导体层，有源层，p导电型的第二GaN基化合物半导体层，与第一GaN导电型电连接的第一电极 GaN基化合物半导体层，与第二GaN基化合物半导体层电连接的第二电极，由未掺杂的GaN基化合物半导体构成的杂质扩散防止层，防止p型杂质的杂质扩散防止层 从扩散到有源层，以及p型导电型的层叠结构或第三GaN基化合物半导体层。 在有源层和第二GaN基化合物半导体层之间，依次从有源层侧配置p型导电型杂质扩散防止层和层叠结构或第三GaN类化合物半导体层。