公开(公告)号：US07928452B2

公开(公告)日：2011-04-19

申请号：US12402160

申请日：2009-03-11

申请人： Hiroki Naito ,  Hiroyuki Okuyama ,  Goshi Biwa ,  Ippei Nishinaka

发明人： Hiroki Naito ,  Hiroyuki Okuyama ,  Goshi Biwa ,  Ippei Nishinaka

IPC分类号： H01L33/00

CPC分类号： H01L33/025 ,  H01L33/04 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： A GaN-based semiconductor light-emitting element includes a first GaN-based compound semiconductor layer of n-conductivity type, an active layer, a second GaN-based compound semiconductor layer of p-conductivity type, a first electrode electrically connected to the first GaN-based compound semiconductor layer, a second electrode electrically connected to the second GaN-based compound semiconductor layer, an impurity diffusion-preventing layer composed of an undoped GaN-based compound semiconductor, the impurity diffusion-preventing layer preventing a p-type impurity from diffusing into the active layer, and a laminated structure or a third GaN-based compound semiconductor layer of p-conductivity type. The impurity diffusion-preventing layer and the laminated structure or the third GaN-based compound semiconductor layer of p-conductivity type are disposed, between the active layer and the second GaN-based compound semiconductor layer, in that order from the active layer side.

摘要翻译： GaN基半导体发光元件包括n导电型的第一GaN基化合物半导体层，有源层，p导电型的第二GaN基化合物半导体层，与第一GaN导电型电连接的第一电极 GaN基化合物半导体层，与第二GaN基化合物半导体层电连接的第二电极，由未掺杂的GaN基化合物半导体构成的杂质扩散防止层，防止p型杂质的杂质扩散防止层 从扩散到有源层，以及p型导电型的层叠结构或第三GaN基化合物半导体层。 在有源层和第二GaN基化合物半导体层之间，依次从有源层侧配置p型导电型杂质扩散防止层和层叠结构或第三GaN类化合物半导体层。

公开(公告)号：US20090230878A1

公开(公告)日：2009-09-17

申请号：US12402160

申请日：2009-03-11

申请人： Hiroki Naito ,  Hiroyuki Okuyama ,  Goshi Biwa ,  Ippei Nishinaka

发明人： Hiroki Naito ,  Hiroyuki Okuyama ,  Goshi Biwa ,  Ippei Nishinaka

IPC分类号： H05B41/36 ,  H01L33/00 ,  H01L21/28

CPC分类号： H01L33/025 ,  H01L33/04 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： A GaN-based semiconductor light-emitting element includes a first GaN-based compound semiconductor layer of n-conductivity type, an active layer, a second GaN-based compound semiconductor layer of p-conductivity type, a first electrode electrically connected to the first GaN-based compound semiconductor layer, a second electrode electrically connected to the second GaN-based compound semiconductor layer, an impurity diffusion-preventing layer composed of an undoped GaN-based compound semiconductor, the impurity diffusion-preventing layer preventing a p-type impurity from diffusing into the active layer, and a laminated structure or a third GaN-based compound semiconductor layer of p-conductivity type. The impurity diffusion-preventing layer and the laminated structure or the third GaN-based compound semiconductor layer of p-conductivity type are disposed, between the active layer and the second GaN-based compound semiconductor layer, in that order from the active layer side.

摘要翻译： GaN基半导体发光元件包括n导电型的第一GaN基化合物半导体层，有源层，p导电型的第二GaN基化合物半导体层，与第一GaN导电型电连接的第一电极 GaN基化合物半导体层，与第二GaN基化合物半导体层电连接的第二电极，由未掺杂的GaN基化合物半导体构成的杂质扩散防止层，防止p型杂质的杂质扩散防止层 从扩散到有源层，以及p型导电型的层叠结构或第三GaN基化合物半导体层。 在有源层和第二GaN基化合物半导体层之间，依次从有源层侧配置p型导电型杂质扩散防止层和层叠结构或第三GaN类化合物半导体层。

公开(公告)号：US08946764B2

公开(公告)日：2015-02-03

申请号：US12138250

申请日：2008-06-12

申请人： Goshi Biwa ,  Ippei Nishinaka ,  Hiroyuki Okuyama

发明人： Goshi Biwa ,  Ippei Nishinaka ,  Hiroyuki Okuyama

IPC分类号： H01L33/00 ,  H01L33/32 ,  H01L33/02 ,  H01L27/144 ,  H01L27/15 ,  H01L31/0304

CPC分类号： H01L33/32 ,  H01L27/1446 ,  H01L27/156 ,  H01L31/0304 ,  H01L33/025 ,  H01L2224/0603

摘要： A GaN-based semiconductor element which can suppress a leakage current generated during reverse bias application, an optical device using the same, and an image display apparatus using the optical device are provided. The GaN-based semiconductor element has a first GaN-based compound layer including an n-type conductive layer; a second GaN-based compound layer including a p-type conductive layer; and an active layer provided between the first GaN-based compound layer and the second GaN-based compound layer. In this GaN-based semiconductor element, the first GaN-based compound layer includes an underlayer having an n-type impurity concentration in the range of 3×1018 to 3×1019/cm3, and when a reverse bias of 5 V is applied, a leakage current density, which is the density of a current flowing per unit area of the active layer, is 2×10−5 A/cm2 or less.

摘要翻译： 提供了可以抑制在反偏压施加期间产生的漏电流的GaN基半导体元件，使用该GaN基半导体元件的光学器件和使用该光学器件的图像显示装置。 GaN基半导体元件具有包括n型导电层的第一GaN基化合物层; 包括p型导电层的第二GaN基化合物层; 以及设置在第一GaN基化合物层和第二GaN基化合物层之间的有源层。 在该GaN系半导体元件中，第一GaN基化合物层包括在3×1018〜3×1019 / cm3的范围内具有n型杂质浓度的底层，当施加5V的反向偏压时， 作为有源层的每单位面积流动的电流的密度的漏电流密度为2×10 -5 A / cm 2以下。

公开(公告)号：US20090008648A1

公开(公告)日：2009-01-08

申请号：US12138250

申请日：2008-06-12

申请人： Goshi Biwa ,  Ippei Nishinaka ,  Hiroyuki Okuyama

发明人： Goshi Biwa ,  Ippei Nishinaka ,  Hiroyuki Okuyama

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L27/1446 ,  H01L27/156 ,  H01L31/0304 ,  H01L33/025 ,  H01L2224/0603

摘要： A GaN-based semiconductor element which can suppress a leakage current generated during reverse bias application, an optical device using the same, and an image display apparatus using the optical device are provided. The GaN-based semiconductor element has a first GaN-based compound layer including an n-type conductive layer; a second GaN-based compound layer including a p-type conductive layer; and an active layer provided between the first GaN-based compound layer and the second GaN-based compound layer. In this GaN-based semiconductor element, the first GaN-based compound layer includes an underlayer having an n-type impurity concentration in the range of 3×1018 to 3×1019/cm3, and when a reverse bias of 5 V is applied, a leakage current density, which is the density of a current flowing per unit area of the active layer, is 2×10−5 A/cm2 or less.

摘要翻译： 提供了可以抑制在反偏压施加期间产生的漏电流的GaN基半导体元件，使用该GaN基半导体元件的光学器件和使用该光学器件的图像显示装置。 GaN基半导体元件具有包括n型导电层的第一GaN基化合物层; 包括p型导电层的第二GaN基化合物层; 以及设置在第一GaN基化合物层和第二GaN基化合物层之间的有源层。 在该GaN基半导体元件中，第一GaN基化合物层包括n型杂质浓度在3×1018〜3×1019 / cm3范围内的底层，当施加5V的反向偏压时，漏电流密度 是活性层每单位面积流动的电流的密度，为2×10 -5 A / cm 2以下。

公开(公告)号：US08993992B2

公开(公告)日：2015-03-31

申请号：US12432397

申请日：2009-04-29

申请人： Goshi Biwa ,  Hiroyuki Okuyama

发明人： Goshi Biwa ,  Hiroyuki Okuyama

IPC分类号： H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H04N9/31 ,  H01L23/00 ,  H01L33/02 ,  H01L33/32

CPC分类号： H01L33/325 ,  H01L24/05 ,  H01L33/0025 ,  H01L33/025 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L2224/04042 ,  H01L2224/05552 ,  H01L2224/0603 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/15788 ,  H01L2924/181 ,  H04N9/3155 ,  H04N9/3164 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A GaN based semiconductor light-emitting device is provided. The light-emitting device includes a first GaN based compound semiconductor layer of an n-conductivity type; an active layer; a second GaN based compound semiconductor layer; an underlying layer composed of a GaN based compound semiconductor, the underlying layer being disposed between the first GaN based compound semiconductor layer and the active layer; and a superlattice layer composed of a GaN based compound semiconductor doped with a p-type dopant, the superlattice layer being disposed between the active layer and the second GaN based compound semiconductor layer.

公开(公告)号：US07564064B2

公开(公告)日：2009-07-21

申请号：US11682770

申请日：2007-03-06

申请人： Toyoharu Oohata ,  Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki

发明人： Toyoharu Oohata ,  Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki

IPC分类号： H01L27/15

CPC分类号： H01L33/20 ,  H01L33/007 ,  H01L33/24

摘要： An n-type GaN layer is grown onto a sapphire substrate and a hexagonal etching mask is formed onto the n-type GaN layer as provided. The n-type GaN layer is etched to a predetermined depth by using the etching mask by the RIE method. A hexagonal prism portion whose upper surface is a C plane is formed. After the etching mask was removed, an active layer and a p-type GaN layer are sequentially grown onto the whole surface of the substrate so as to cover the hexagonal prism portion, thereby forming a light emitting device structure. After that, a p-side electrode is formed onto the p-type GaN layer of the hexagonal prism portion and an n-side electrode is formed onto the n-type GaN layer.

摘要翻译： 在蓝宝石衬底上生长n型GaN层，并且在所提供的n型GaN层上形成六边形蚀刻掩模。 通过使用RIE法的蚀刻掩模将n型GaN层蚀刻到预定深度。 形成上表面为C面的六边形棱镜部。 在除去蚀刻掩模之后，将有源层和p型GaN层依次生长到基板的整个表面上以覆盖六边形棱镜部分，从而形成发光器件结构。 之后，在六边形棱镜部分的p型GaN层上形成p侧电极，在n型GaN层上形成n侧电极。

公开(公告)号：US07553370B2

公开(公告)日：2009-06-30

申请号：US11311017

申请日：2005-12-19

申请人： Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

发明人： Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

IPC分类号： C30B25/16

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02557 ,  H01L21/02565 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265

摘要： Methods of crystal growth for semiconductor materials, such as nitride semiconductors, and methods of manufacturing semiconductor devices are provided. The method of crystal growth includes forming a number of island crystal regions during a first crystal growth phase and continuing growth of the island crystal regions during a second crystal growth phase while bonding of boundaries of the island crystal regions occurs. The second crystal growth phase can include a crystal growth rate that is higher than the crystal growth rate of the first crystal growth phase and/or a temperature that is lower than the first crystal growth phase. This can reduce the density of dislocations, thereby improving the performance and service life of a semiconductor device which is formed on a nitride semiconductor made in accordance with an embodiment of the present invention.

公开(公告)号：US20080048195A1

公开(公告)日：2008-02-28

申请号：US11813736

申请日：2005-12-26

申请人： Hiroyuki Okuyama ,  Goshi Biwa

发明人： Hiroyuki Okuyama ,  Goshi Biwa

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/0079 ,  H01L33/007 ,  H01L33/14 ,  H01L33/16

摘要： A GaN-based semiconductor light-emitting element capable of suppressing the occurrence of piezoelectric spontaneous polarization in the thickness direction of an active layer and reducing the driving voltage of a light-emitting diode is provided. The GaN-based semiconductor light-emitting element has a structure with a first GaN-based compound semiconductor layer 21 having the top face parallel to the a-plane and having a first conductivity type, an active layer 22 having the top face parallel to the a-plane, a second GaN-based compound semiconductor layer 23 having the top face parallel to the a-plane and having a second conductivity type, and a contact layer 24 composed of a GaN-based compound semiconductor and having the top face parallel to the a-plane, stacked in that order. The GaN-based semiconductor light-emitting element further includes a first electrode 25 disposed on the first GaN-based compound semiconductor layer 21 and a second electrode 26 disposed on the contact layer 24.

摘要翻译： 提供了能够抑制有源层的厚度方向上的压电自发极化的发生并且降低发光二极管的驱动电压的GaN基半导体发光元件。 GaN基半导体发光元件具有第一GaN基化合物半导体层21的结构，该第一GaN基化合物半导体层21的顶面平行于a面并具有第一导电类型，有源层22的顶面平行于 a面，具有与a面平行并具有第二导电类型的第二GaN基化合物半导体层23和由GaN基化合物半导体构成的接触层24，并且其顶面平行于 a平面，按顺序堆叠。 GaN基半导体发光元件还包括设置在第一GaN基化合物半导体层21上的第一电极25和设置在接触层24上的第二电极26。

公开(公告)号：US20070077674A1

公开(公告)日：2007-04-05

申请号：US11558115

申请日：2006-11-09

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

IPC分类号： H01L21/00

CPC分类号： H01L33/24 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/48137 ,  H01L2224/48139

摘要： A process for producing a semiconductor light-emitting device is provided. The process includes providing a substrate including a substrate surface oriented along a substrate surface plane, forming a crystal seed layer on the substrate surface, forming a masking layer on the crystal seed layer, wherein the masking layer includes an opening, forming a crystal layer by selective growth of the crystal seed layer through the opening of the masking layer, wherein the crystal layer includes a crystal layer surface oriented along a crystal layer plane that diagonally intersects the substrate surface, and forming each of a first conductive layer, an active layer, and a second conductive layer along at least a portion of the crystal layer surface.

摘要翻译： 提供一种制造半导体发光器件的方法。 该方法包括提供基板，其包括沿着基板表面平面取向的基板表面，在基板表面上形成晶种层，在晶种层上形成掩模层，其中掩模层包括开口，通过 通过所述掩模层的开口选择性地生长所述晶种层，其中所述晶体层包括沿着与所述衬底表面对角地相交的晶体层平面取向的晶体层表面，并且形成第一导电层，有源层， 以及沿着所述晶体层表面的至少一部分的第二导电层。

公开(公告)号：US20060170001A1

公开(公告)日：2006-08-03

申请号：US11331290

申请日：2006-01-12

申请人： Jun Suzuki ,  Masato Doi ,  Goshi Biwa ,  Hiroyuki Okuyama

发明人： Jun Suzuki ,  Masato Doi ,  Goshi Biwa ,  Hiroyuki Okuyama

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  H01L33/40

摘要： A semiconductor light-emitting device is provided. In an InGaN-based semiconductor light-emitting device including an Ag electrode, a semiconductor layer on the contact side of at least the Ag electrode is a dislocation semiconductor layer of which dislocation density is selected to be less than 1×107 (1/cm2) and thereby short-circuit caused by Ag migration generated along this dislocation can be avoided. Thus, this semiconductor light-emitting device is able to solve a problem of a shortened life and a problem with the fraction of defective devices encountered with the InGaN-based semiconductor light-emitting device.

摘要翻译： 提供了一种半导体发光器件。 在包括Ag电极的InGaN系半导体发光器件中，至少Ag电极的接触侧的半导体层是位错密度选择为小于1×10 7（1 / cm 2），从而可以避免沿着该位错产生的Ag迁移引起的短路。 因此，该半导体发光器件能够解决寿命缩短的问题，并且能够解决InGaN系半导体发光元件遇到的缺陷器件的分数的问题。