公开(公告)号：US20090200565A1

公开(公告)日：2009-08-13

申请号：US12251872

申请日：2008-10-15

Applicant: Tan Sakong ,  Cheol Soo Sone ,  Ho Sun Paek ,  Suk Ho Yoon ,  Jeong Wook Lee

Inventor： Tan Sakong ,  Cheol Soo Sone ,  Ho Sun Paek ,  Suk Ho Yoon ,  Jeong Wook Lee

IPC: H01L33/00

CPC classification number: H01L33/12 ,  H01L21/0254 ,  H01L33/06 ,  H01L33/34

Abstract: There is provided a GaN-based semiconductor light emitting device including: a substrate; and an n-type GaN-based semiconductor layer, an active layer and a p-type GaN-based semiconductor layer sequentially deposited on the substrate, wherein the active layer includes: a first barrier layer including AlxInyGa1−x−yN, where 0

Abstract translation: 提供一种GaN基半导体发光器件，包括：衬底; 以及依次沉积在所述衬底上的n型GaN基半导体层，有源层和p型GaN基半导体层，其中所述有源层包括：包含Al x In y Ga 1-x-y N的第一势垒层， x <1,0

公开(公告)号：US20090114929A1

公开(公告)日：2009-05-07

申请号：US12250133

申请日：2008-10-13

Applicant: Jeong Wook LEE ,  Yong Jo Park ,  Cheol Soo Sone

Inventor： Jeong Wook LEE ,  Yong Jo Park ,  Cheol Soo Sone

IPC: H01L33/00

CPC classification number: H01L25/0753 ,  H01L33/50 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2933/0091 ,  H01L2924/00014

Abstract: There is provided a white light emitting device that prevents a red phosphor from resorbing wavelength-converted light to improve white luminous efficiency. A white light emitting device according to an aspect of the invention includes a package body; at least two LED chips mounted to the package body and emitting excitation light; and a molding unit including phosphors, absorbing the excitation light and emitting wavelength-converted light, in regions of the molding unit divided according to the LED chips and molding the LED chips. According to the aspect of the invention, since the phosphor for converted red light can be prevented from resorbing light generated from other regions of the molding unit, the white light emitting device that can improve white luminous efficiency or control color rendering and color temperature by adjusting a mixing ratio of converted light for white light emission.

Abstract translation: 提供了防止红色荧光体再吸收波长转换的光以提高白色发光效率的白色发光装置。 根据本发明的一个方面的白色发光器件包括封装体; 至少两个LED芯片安装到封装主体并发射激发光; 以及模制单元，其包括在根据LED芯片划分的模制单元的区域中吸收激发光并发射波长转换的光的荧光体，并且模制LED芯片。 根据本发明的方面，由于可以防止用于转换的红光的荧光体吸收由成型单元的其它区域产生的光，所以可以通过调节白光发光器件来提高白色发光效率或控制显色和色温 用于白光发射的转换光的混合比。

公开(公告)号：US20080286893A1

公开(公告)日：2008-11-20

申请号：US12215407

申请日：2008-06-27

Applicant: Hyun-soo Kim ,  Jeong-wook Lee

Inventor： Hyun-soo Kim ,  Jeong-wook Lee

IPC: H01L33/00

CPC classification number: H01L33/382

Abstract: The semiconductor light emitting device having a protrusion and recess structure includes: a lower clad layer disposed on a substrate; an active layer formed on one portion of a top surface of the lower clad layer; an upper clad layer formed on the active layer; a first electrode formed on the upper clad layer; and a second electrode that is formed on a protrusion and recess structural pattern region formed on a portion of the top surface of the lower clad layer not occupied by the active layer.

Abstract translation: 具有突起和凹陷结构的半导体发光器件包括：设置在基板上的下覆盖层; 形成在所述下包层的顶表面的一部分上的有源层; 形成在有源层上的上覆层; 形成在所述上包层上的第一电极; 以及第二电极，其形成在形成在未被有源层占据的下包层的顶表面的一部分上的突起和凹陷结构图案区域上。

公开(公告)号：US07282746B2

公开(公告)日：2007-10-16

申请号：US11448832

申请日：2006-06-08

Applicant: Jeong-wook Lee ,  Vassili Leniachine ,  Mi-jeong Song ,  Suk-ho Yoon ,  Hyun-soo Kim

Inventor： Jeong-wook Lee ,  Vassili Leniachine ,  Mi-jeong Song ,  Suk-ho Yoon ,  Hyun-soo Kim

IPC: H01L27/15 ,  H01L29/22

CPC classification number: H01L33/24 ,  H01L33/0075

Abstract: A light emitting diode (LED) and a method are provided for fabricating the a LED with an improved structure for better light emitting efficiency and better light output performance. The LED includes an n-GaN layer formed on a substrate to have a plurality of protrusions, thereby having an uneven surface, wherein a side surface of the protrusions is inclined with a first inclination angle α (35°≦α≦90°) with respect to an upper surface of the substrate; an active layer conformally formed on the surface of the n-GaN layer, wherein the surface of the active layer formed on the side surface of the protrusions is inclined with a second inclination angle β (35°≦β≦α) with respect to the upper surface of the substrate; a p-GaN layer conformally formed on the surface of the active layer, wherein the surface of the p-GaN layer formed on the surface of the inclined portion of the active layer is inclined with a third inclination angle γ (20°≦γ

公开(公告)号：US20070202624A1

公开(公告)日：2007-08-30

申请号：US11649237

申请日：2007-01-04

Applicant: Suk-ho Yoon ,  Cheol-soo Sone ,  Jeong-wook Lee ,  Joo-sung Kim

Inventor： Suk-ho Yoon ,  Cheol-soo Sone ,  Jeong-wook Lee ,  Joo-sung Kim

IPC: H01L21/00

CPC classification number: H01L33/22 ,  H01L33/14 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L2933/0016

Abstract: A nitride-based semiconductor light-emitting device having an improved structure to enhance light extraction efficiency, and a method of manufacturing the same are provided. The method includes the operations of sequentially forming an n-clad layer, an active layer, and a p-clad layer on a substrate; forming a plurality of masking dots on an upper surface of the p-clad layer; forming a p-contact layer having a rough surface on portions of the p-clad layer between the masking dots; forming a rough n-contact surface of the n-clad layer having the same rough shape as the rough shape of the p-contact layer by dry-etching from a portion of the upper surface of the p-contact layer to a desired depth of the n-clad layer; forming an n-electrode on the rough n-contact surface; and forming a p-electrode on the p-contact layer.

Abstract translation: 提供一种具有改善结构以提高光提取效率的氮化物基半导体发光器件及其制造方法。 该方法包括在衬底上依次形成n包覆层，有源层和p覆盖层的操作; 在所述p覆盖层的上表面上形成多个掩模点; 在所述掩模点之间的所述p覆盖层的部分上形成具有粗糙表面的p接触层; 通过干蚀刻从p接触层的上表面的一部分形成与p接触层的粗糙形状相同的粗糙形状的n包覆层的粗糙的n接触表面到期望的深度 n覆层; 在粗糙的n接触面上形成n电极; 以及在p-接触层上形成p电极。

公开(公告)号：US20060226431A1

公开(公告)日：2006-10-12

申请号：US11450389

申请日：2006-06-12

Applicant: Jeong-wook Lee ,  Youn-joon Sung ,  Jae-hee Cho ,  Ho-sun Paek

Inventor： Jeong-wook Lee ,  Youn-joon Sung ,  Jae-hee Cho ,  Ho-sun Paek

IPC: H01L33/00

CPC classification number: H01L33/12 ,  H01L33/22

Abstract: Provided is a light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate having at least one protruded portion with a curved surface in which a consistent defect density and uniform stress distribution can be obtained even when the growth of the semiconductor crystal layer and the forming of the light-emitting device are completed. In addition, the light-emitting device has a high the light extraction efficiency for extracting light generated at an electroluminescense layer externally.

Abstract translation: 提供了一种发光器件及其制造方法。 发光装置包括具有至少一个具有弯曲表面的突出部分的基板，其中即使当半导体晶体层的生长和发光装置的形成是均匀的时，也可以获得一致的缺陷密度和均匀的应力分布 完成 此外，发光装置具有高的外部提取在电致发光层产生的光的光提取效率。

公开(公告)号：US07098482B2

公开(公告)日：2006-08-29

申请号：US11071223

申请日：2005-03-04

Applicant: Jae-hee Cho ,  Suk-ho Yoon ,  Jeong-wook Lee

Inventor： Jae-hee Cho ,  Suk-ho Yoon ,  Jeong-wook Lee

IPC: H01L27/15

CPC classification number: H01L33/08 ,  H01L33/06 ,  H01L33/325

Abstract: A monolithic white light emitting device is provided. An active layer in the monolithic white light emitting device is doped with silicon or rare earth metal that forms a sub-band. The number of active layers included in the monolithic white light emitting device is one or two. When two active layers are included in the monolithic white light emitting device, a cladding layer is interposed between the two active layers. According to this light emission structure, white light can be emitted by a semiconductor, so a phosphor is not necessary. The monolithic white light emitting device is easily manufactured at a low cost and applied to a wide range of fields compared with a conventional white light emitting device that needs a help of a phosphor.

Abstract translation: 提供了一种单片白光发光装置。 在单片白色发光器件中的有源层掺杂有形成子带的硅或稀土金属。 包含在单片白色发光器件中的有源层的数量是一个或两个。 当双层白色发光器件中包含两个有源层时，在两个有源层之间插入包层。 根据该发光结构，可以通过半导体发出白色的光，因此不需要荧光体。 与需要荧光体的帮助的传统的白色发光器件相比，单片白色发光器件以低成本容易地制造并应用于广泛的领域。

公开(公告)号：US20060118802A1

公开(公告)日：2006-06-08

申请号：US11293273

申请日：2005-12-05

Applicant: Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek

Inventor： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek

IPC: H01L21/00 ,  H01L33/00

CPC classification number: H01L33/12 ,  H01L33/007 ,  H01L33/025 ,  H01L33/20 ,  H01L33/22

Abstract: A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured structures of the patterned first semiconductor layer, and a second semiconductor layer, an active layer, and a third semiconductor layer sequentially formed on the first semiconductor layer and the intermediate layer.

Abstract translation: 提供具有纹理结构的半导体发光二极管及其制造方法。 半导体发光二极管包括形成为纹理结构的第一半导体层，形成在图案化的第一半导体层的纹理结构之间的中间层，以及顺序地形成在第一半导体层上的第二半导体层，有源层和第三半导体层 第一半导体层和中间层。

公开(公告)号：US20050082546A1

公开(公告)日：2005-04-21

申请号：US10852249

申请日：2004-05-25

Applicant: Jeong-Wook Lee ,  Youn-Joon Sung ,  Jae-Hee Cho ,  Ho-Sun Paek

Inventor： Jeong-Wook Lee ,  Youn-Joon Sung ,  Jae-Hee Cho ,  Ho-Sun Paek

IPC: H01L27/15 ,  H01L33/32 ,  H01S5/00

CPC classification number: H01L33/12 ,  H01L33/22

Abstract: Provided is a light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate having at least one protruded portion with a curved surface in which a consistent defect density and uniform stress distribution can be obtained even when the growth of the semiconductor crystal layer and the forming of the light-emitting device are completed. In addition, the light-emitting device has a high the light extraction efficiency for extracting light generated at an electroluminescense layer externally.

Abstract translation: 提供了一种发光器件及其制造方法。 发光装置包括具有至少一个具有弯曲表面的突出部分的基板，其中即使当半导体晶体层的生长和发光装置的形成是均匀的时，也可获得一致的缺陷密度和均匀的应力分布 完成 此外，发光装置具有高的外部提取在电致发光层产生的光的光提取效率。

公开(公告)号：US20050077512A1

公开(公告)日：2005-04-14

申请号：US10949469

申请日：2004-09-27

Applicant: Suk-ho Yoon ,  Cheul-ro Lee ,  Jeong-wook Lee ,  Sung-sook Lee

Inventor： Suk-ho Yoon ,  Cheul-ro Lee ,  Jeong-wook Lee ,  Sung-sook Lee

IPC: C23C16/34 ,  C30B25/18 ,  C30B29/40 ,  H01L21/20 ,  H01L21/205 ,  H01L29/20 ,  H01L33/12 ,  H01L33/32 ,  H01L33/34 ,  H01L29/08

CPC classification number: H01L33/007 ,  C30B25/18 ,  C30B29/40 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/0254 ,  H01L29/2003

Abstract: Provided is a nitride semiconductor formed on a Si substrate and a method of manufacturing the same. A buffer layer is formed on the silicon substrate, and an intermediate layer having voids is formed on the buffer layer. A planarizing layer is formed on the intermediate layer, and a nitride semiconductor layer is formed on the planarizing layer. Therefore, a nitride semiconductor in which the creation of crystal defects, dislocation or cracks is substantially decreased can be produced on a large scale at a low cost.

Abstract translation: 提供了形成在Si衬底上的氮化物半导体及其制造方法。 在硅衬底上形成缓冲层，在缓冲层上形成具有空隙的中间层。 在中间层上形成平坦化层，在平坦化层上形成氮化物半导体层。 因此，可以以低成本大规模地制造其中晶体缺陷，位错或裂纹的产生显着降低的氮化物半导体。