公开(公告)号：US06384686B2

公开(公告)日：2002-05-07

申请号：US09881013

申请日：2001-06-15

申请人： Hirotaka Ueno ,  Yasuhiro Nunogawa ,  Tetsuaki Adachi

发明人： Hirotaka Ueno ,  Yasuhiro Nunogawa ,  Tetsuaki Adachi

IPC分类号： H03G330

CPC分类号： H03G3/3042 ,  H03G1/0088 ,  H03G3/3047

摘要： To reduce power consumption by increasing amplifying efficiency in a low power mode, there is provided a radio communication apparatus in which each of field effect transistors of a radio frequency power module in a multi-stage configuration is controlled by an APC circuit based on a power level instruction signal, and in which a correction circuit is incorporated between the gate of a final stage transistor and the APC circuit to apply a linear gate voltage to the final stage transistor when a High level signal based on the power level instruction signal is applied and to provide a maximum gate voltage of the final stage transistor which is equal to or lower than the gate voltages of other transistors and whose rate of increase relative to the output voltage of the APC circuit gradually reduces when a Low level signal based on the power instruction signal is applied. A high power mode is enabled when the output voltage of the APC circuit is equal to or higher than a prescribed voltage, and a low power mode is enabled when it is lower than the prescribed voltage.

摘要翻译： 为了通过提高低功率模式的放大效率来降低功耗，提供了一种无线电通信装置，其中多级配置中的射频功率模块的场效应晶体管中的每一个基于功率由APC电路控制 并且其中在最后级晶体管的栅极和APC电路之间并入校正电路，以在施加基于功率电平指令信号的高电平信号时将线性栅极电压施加到最终级晶体管;以及 以提供等于或低于其他晶体管的栅极电压的最终栅极电压，并且当基于功率指令的低电平信号时，其相对于APC电路的输出电压的增加速率逐渐降低 信号被施加。 当APC电路的输出电压等于或高于规定电压时，使能高功率模式，低功耗模式在低于规定电压时使能。

公开(公告)号：US07439622B2

公开(公告)日：2008-10-21

申请号：US11581587

申请日：2006-10-17

申请人： Hitoshi Akamine ,  Masashi Suzuki ,  Masao Yamane ,  Tetsuaki Adachi

发明人： Hitoshi Akamine ,  Masashi Suzuki ,  Masao Yamane ,  Tetsuaki Adachi

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01R11/00

CPC分类号： H01L27/0207 ,  H01L23/4824 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L27/088 ,  H01L29/0696 ,  H01L29/1083 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/4238 ,  H01L29/7835 ,  H01L2223/6644 ,  H01L2223/6688 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/49111 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03F3/189 ,  H03F3/211 ,  H03F3/601 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/294 ,  H03F2200/372 ,  H01L2224/45015 ,  H01L2924/207

摘要： The present invention provides a semiconductor device comprising a semiconductor substrate, and transistors formed on the semiconductor substrate, wherein control electrode terminals constituting external electrode terminals of the transistors, and first electrode terminals which transmit output signals, are provided on a main surface of the semiconductor substrate, wherein the control electrode terminals are provided at least one, and a plurality of the first electrode terminals are arranged on one side and a plurality of the first electrode terminals are arranged on the other side with the control electrode terminals being interposed therebetween, wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on one side of the control electrode terminals constitute a first transistor portion, and wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on the other side of the control electrode terminals constitute a second transistor portion. The semiconductor device is quadrangular.

摘要翻译： 本发明提供一种半导体器件，包括半导体衬底和形成在半导体衬底上的晶体管，其中构成晶体管的外部电极端子的控制电极端子和传输输出信号的第一电极端子设置在半导体的主表面上 基板，其中控制电极端子设置为至少一个，并且多个第一电极端子布置在一侧，并且多个第一电极端子布置在另一侧，其中控制电极端子插入其间，其中 包括控制电极端子和位于控制电极端子一侧的多个第一电极端子的部分构成第一晶体管部分，并且其中包括控制电极端子和位于第一晶体管部分上的多个第一电极端子的部分 另一边 的控制电极端子构成第二晶体管部分。 半导体器件是四边形。

公开(公告)号：US20080048777A1

公开(公告)日：2008-02-28

申请号：US11905421

申请日：2007-10-01

申请人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

发明人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

IPC分类号： H03F3/20

CPC分类号： H01L25/16 ,  H01L23/49844 ,  H01L23/552 ,  H01L23/645 ,  H01L23/66 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6611 ,  H01L2223/6644 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48799 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3025 ,  H03F1/56 ,  H03F3/195 ,  H03F3/213 ,  H03F3/604 ,  H03F2200/12 ,  H03F2200/168 ,  H03F2200/222 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/408 ,  H03F2200/451 ,  H03H7/383 ,  H01L2924/00 ,  H01L2224/45099

摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

摘要翻译： 在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极 的布线基板。 为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置， 电连接到输出线。 电连接到输入线的基板侧输入电极位于距离半导体芯片侧的距离大约等于从半导体芯片的侧面到基板侧输出电极的距离处，或者位于距离半导体芯片 半导体芯片的侧面比基板侧接合电极为止。

公开(公告)号：US07145394B2

公开(公告)日：2006-12-05

申请号：US11098454

申请日：2005-04-05

申请人： Masahito Numanami ,  Hitoshi Akamine ,  Tsuyoshi Shibuya ,  Tetsuaki Adachi ,  Masatoshi Morikawa ,  Yasuhiro Nunogawa

发明人： Masahito Numanami ,  Hitoshi Akamine ,  Tsuyoshi Shibuya ,  Tetsuaki Adachi ,  Masatoshi Morikawa ,  Yasuhiro Nunogawa

IPC分类号： H03F3/16

CPC分类号： H01L29/7835 ,  H01L29/1045 ,  H01L29/4175 ,  H01L29/7831 ,  H01L2924/0002 ,  H03F1/02 ,  H03F1/223 ,  H03F3/24 ,  H03F3/601 ,  H03F3/72 ,  H03F2203/7206 ,  H03G1/007 ,  H04B2001/045 ,  H01L2924/00

摘要： A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the EDGE (for a linear amplifying action).

摘要翻译： 一种多级放大器结构的高频功率放大器模块，包括：输入端; 输出端子; 一个控制终端; 和模式切换终端。 第一放大级包括双栅极FET，并且根据信号的偏置电压从控制端子和模式切换端子施加到双栅极FET的第一栅极和第二栅极，以及来自输入端的无线电信号 端子施加到第二栅极，例如双栅极FET的源极。 根据来自模式切换端子的信号，高频功率放大器模块的模式用于GSM（即，用于非线性放大动作）和EDGE（用于线性放大动作）。

公开(公告)号：US07068521B2

公开(公告)日：2006-06-27

申请号：US11194701

申请日：2005-08-02

申请人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

发明人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

IPC分类号： H01L23/58

CPC分类号： H01L24/06 ,  H01L23/04 ,  H01L23/49805 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/552 ,  H01L23/645 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L2223/6611 ,  H01L2223/6627 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/45669 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/48799 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/4912 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15173 ,  H01L2924/15313 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/19032 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03F1/56 ,  H03F3/195 ,  H03F3/213 ,  H03F3/604 ,  H03F2200/12 ,  H03F2200/168 ,  H03F2200/222 ,  H03F2200/255 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/408 ,  H03F2200/411 ,  H03F2200/423 ,  H03F2200/451 ,  H03F2200/543 ,  H03H7/383 ,  H05K1/0243 ,  H05K1/0298 ,  H05K1/183 ,  H05K3/403 ,  H01L2924/05432 ,  H01L2924/2065 ,  H01L2224/45099 ,  H01L2924/00

摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

公开(公告)号：US06943441B2

公开(公告)日：2005-09-13

申请号：US10291840

申请日：2002-11-12

申请人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

发明人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

IPC分类号： H01L23/04 ,  H01L23/49 ,  H01L23/498 ,  H01L23/552 ,  H01L23/66 ,  H01L29/22 ,  H03F3/195 ,  H03F3/60 ,  H05K1/00 ,  H05K1/02 ,  H05K1/18 ,  H05K3/40 ,  H01L21/60

CPC分类号： H01L24/06 ,  H01L23/04 ,  H01L23/49805 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/552 ,  H01L23/645 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L2223/6611 ,  H01L2223/6627 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/45669 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/48799 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/4912 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15173 ,  H01L2924/15313 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/19032 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03F1/56 ,  H03F3/195 ,  H03F3/213 ,  H03F3/604 ,  H03F2200/12 ,  H03F2200/168 ,  H03F2200/222 ,  H03F2200/255 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/408 ,  H03F2200/411 ,  H03F2200/423 ,  H03F2200/451 ,  H03F2200/543 ,  H03H7/383 ,  H05K1/0243 ,  H05K1/0298 ,  H05K1/183 ,  H05K3/403 ,  H01L2924/05432 ,  H01L2924/2065 ,  H01L2224/45099 ,  H01L2924/00

摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is placed at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

摘要翻译： 在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极 的布线基板。 为了使高频功率放大器模块尺寸小，将电连接到固定参考电位的线的衬底侧接合电极放置在比半导体芯片的离开半导体芯片的一侧更远的位置处， 电连接到输出线。 电连接到输入线的基板侧输入电极位于距离半导体芯片侧的距离大约等于从半导体芯片的侧面到基板侧输出电极的距离处，或者位于距离半导体芯片 半导体芯片的侧面比基板侧接合电极为止。

公开(公告)号：US06617927B2

公开(公告)日：2003-09-09

申请号：US10122382

申请日：2002-04-16

申请人： Masahito Numanami ,  Hitoshi Akamine ,  Tsuyoshi Shibuya ,  Tetsuaki Adachi ,  Masatoshi Morikawa ,  Yasuhiro Nunogawa

发明人： Masahito Numanami ,  Hitoshi Akamine ,  Tsuyoshi Shibuya ,  Tetsuaki Adachi ,  Masatoshi Morikawa ,  Yasuhiro Nunogawa

IPC分类号： H03F316

CPC分类号： H01L29/7835 ,  H01L29/1045 ,  H01L29/4175 ,  H01L29/7831 ,  H01L2924/0002 ,  H03F1/02 ,  H03F1/223 ,  H03F3/24 ,  H03F3/601 ,  H03F3/72 ,  H03F2203/7206 ,  H03G1/007 ,  H04B2001/045 ,  H01L2924/00

摘要： A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the EDGE (for a linear amplifying action).

公开(公告)号：US06288612B1

公开(公告)日：2001-09-11

申请号：US09722563

申请日：2000-11-28

申请人： Hirotaka Ueno ,  Yasuhiro Nunogawa ,  Tetsuaki Adachi

发明人： Hirotaka Ueno ,  Yasuhiro Nunogawa ,  Tetsuaki Adachi

IPC分类号： H03G330

CPC分类号： H03G3/3042 ,  H03G1/0088 ,  H03G3/3047

摘要： To reduce power consumption by increasing amplifying efficiency in a low power mode, there is provided a radio communication apparatus in which each of field effect transistors of a radio frequency power module in a multi-stage configuration is controlled by an APC circuit based on a power level instruction signal, and in which a correction circuit is incorporated between the gate of a final stage transistor and the APC circuit to apply a linear gate voltage to the final stage transistor when a High level signal based on the power level instruction signal is applied and to provide a maximum gate voltage of the final stage transistor which is equal to or lower than the gate voltages of other transistors and whose rate of increase relative to the output voltage of the APC circuit gradually reduces when a Low level signal based on the power instruction signal is applied. A high power mode is enabled when the output voltage of the APC circuit is equal to or higher than a prescribed voltage, and a low power mode is enabled when it is lower than the prescribed voltage.

公开(公告)号：US06172567B2

公开(公告)日：2001-01-09

申请号：US09385690

申请日：1999-08-30

申请人： Hirotaka Ueno ,  Yasuhiro Nunogawa ,  Tetsuaki Adachi

发明人： Hirotaka Ueno ,  Yasuhiro Nunogawa ,  Tetsuaki Adachi

IPC分类号： H03G330

CPC分类号： H03G3/3042 ,  H03G1/0088 ,  H03G3/3047

摘要： To reduce power consumption by increasing amplifying efficiency in a low power mode, there is provided a radio communication apparatus in which each of field effect transistors of a radio frequency power module in a multi-stage configuration is controlled by an APC circuit based on a power level instruction signal, and in which a correction circuit is incorporated between the gate of a final stage transistor and the APC circuit to apply a linear gate voltage to the final stage transistor when a High level signal based on the power level instruction signal is applied and to provide a maximum gate voltage of the final stage transistor which is equal to or lower than the gate voltages of other transistors and whose rate of increase relative to the output voltage of the APC circuit gradually reduces when a Low level signal based on the power instruction signal is applied. A high power mode is enabled when the output voltage of the APC circuit is equal to or higher than a prescribed voltage, and a low power mode is enabled when it is lower than the prescribed voltage.

摘要翻译： 为了通过提高低功率模式的放大效率来降低功耗，提供了一种无线电通信装置，其中多级配置中的射频功率模块的场效应晶体管中的每一个基于功率由APC电路控制 并且其中在最后级晶体管的栅极和APC电路之间并入校正电路，以在施加基于功率电平指令信号的高电平信号时将线性栅极电压施加到最终级晶体管;以及 以提供等于或低于其他晶体管的栅极电压的最终栅极电压，并且当基于功率指令的低电平信号时，其相对于APC电路的输出电压的增加速率逐渐降低 信号被施加。 当APC电路的输出电压等于或高于规定电压时，使能高功率模式，低功耗模式在低于规定电压时使能。