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    Laser diode device, method of driving the same, and laser diode apparatus
    41.
    发明授权
    Laser diode device, method of driving the same, and laser diode apparatus 有权
    激光二极管装置及其驱动方法以及激光二极管装置

    公开(公告)号：US08989228B2

    公开(公告)日：2015-03-24

    申请号：US12828403

    申请日：2010-07-01

    申请人： Masaru Kuramoto ,  Tomoyuki Oki ,  Tomoya Sugahara ,  Hiroyuki Yokoyama

    发明人： Masaru Kuramoto ,  Tomoyuki Oki ,  Tomoya Sugahara ,  Hiroyuki Yokoyama

    IPC分类号： H01S5/00 ,  H01S5/062 ,  B82Y20/00 ,  H01S5/06 ,  H01S5/0625 ,  H01S5/20 ,  H01S5/343

    CPC分类号： H01S5/06216 ,  B82Y20/00 ,  H01S5/0602 ,  H01S5/06253 ,  H01S5/2009 ,  H01S5/34333

    摘要： An ultrashort pulse and ultrahigh power laser diode device capable of outputting pulse laser light having higher peak power with a simple composition and a simple structure is provided. The laser diode device includes: a laminated structure composed of a first compound semiconductor layer containing n-type impurity, an active layer having a quantum well structure, and a second compound semiconductor layer containing p-type impurity; a first electrode electrically connected to the first compound semiconductor layer; and a second electrode electrically connected to the second compound semiconductor layer, wherein the second compound semiconductor layer is provided with an electron barrier layer having a thickness of 1.5*10−8 m or more, and driving is made by a pulse current having a value 10 or more times as large as a threshold current value.

    摘要翻译： 提供了一种能够以简单的组成和简单结构输出具有较高峰值功率的脉冲激光的超短脉冲和超高功率激光二极管装置。 激光二极管装置包括：由包含n型杂质的第一化合物半导体层，具有量子阱结构的有源层和含有p型杂质的第二化合物半导体层构成的层叠结构; 电连接到第一化合物半导体层的第一电极; 和与第二化合物半导体层电连接的第二电极，其中第二化合物半导体层设置有厚度为1.5×10 -8 m以上的电子势垒层，并且通过具有值的脉冲电流进行驱动 大于阈值电流值的10倍以上。

    Light-emitting element and method for manufacturing the same
    42.
    发明授权
    Light-emitting element and method for manufacturing the same 有权
    发光元件及其制造方法

    公开(公告)号：US08761221B2

    公开(公告)日：2014-06-24

    申请号：US12078681

    申请日：2008-04-03

    申请人： Tomoyuki Oki ,  Yuji Masui ,  Yoshinori Yamauchi ,  Rintaro Koda ,  Takahiro Arakida

    发明人： Tomoyuki Oki ,  Yuji Masui ,  Yoshinori Yamauchi ,  Rintaro Koda ,  Takahiro Arakida

    IPC分类号： H01S5/00

    CPC分类号： H01S5/18308 ,  B82Y20/00 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/0425 ,  H01S5/125 ,  H01S5/18 ,  H01S5/18311 ,  H01S5/18338 ,  H01S5/187 ,  H01S5/22 ,  H01S5/221 ,  H01S5/2231 ,  H01S5/343 ,  H01S5/34313 ,  H01S5/3432 ,  H01S2301/176 ,  H01S2301/18

    摘要： A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

    摘要翻译： 发光元件包括台面结构，其中第一导电类型的第一化合物半导体层，有源层和第二导电类型的第二化合物半导体层以该顺序设置，其中第一 化合物半导体层和第二化合物半导体层具有由从台面结构的侧壁部向内延伸的绝缘区域包围的电流收缩区域; 设置成围绕台面结构的壁结构; 连接台面结构和壁结构的至少一个桥结构，壁结构和桥结构各自具有与设置绝缘区域的台面结构部分相同的层结构; 第一电极; 以及设置在所述壁结构的顶面上的第二电极。

    Light-emitting element assembly and method for manufacturing the same
    43.
    发明授权
    Light-emitting element assembly and method for manufacturing the same 有权
    发光元件组件及其制造方法

    公开(公告)号：US08372670B2

    公开(公告)日：2013-02-12

    申请号：US12841812

    申请日：2010-07-22

    申请人： Rintaro Koda ,  Takahiro Arakida ,  Satoshi Taniguchi ,  Yuji Masui ,  Nobuhiro Suzuki ,  Tomoyuki Oki ,  Chiyomi Uchiyama ,  Kayoko Kikuchi

    发明人： Rintaro Koda ,  Takahiro Arakida ,  Satoshi Taniguchi ,  Yuji Masui ,  Nobuhiro Suzuki ,  Tomoyuki Oki ,  Chiyomi Uchiyama ,  Kayoko Kikuchi

    IPC分类号： G01R31/26 ,  H01L21/66

    CPC分类号： H01S5/18311 ,  H01L33/0079 ,  H01L33/44 ,  H01L33/62 ,  H01L33/647 ,  H01L2924/0002 ,  H01S5/0207 ,  H01S5/0215 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/02272 ,  H01S5/0425 ,  H01L2924/00

    摘要： A method for making a light-emitting element assembly including a support substrate having a first surface, a second surface facing the first surface, a recessed portion, and a conductive material layer formed over the first surface and the inner surface of the recessed portion, and a light-emitting element. The light-emitting element has a laminated structure including a first compound semiconductor layer, a light-emitting portion, and a second compound semiconductor layer, at least the second compound semiconductor layer and the light-emitting portion constituting a mesa structure. The light-emitting element further includes an insulating layer formed, a second electrode, and a first electrode. The mesa structure is placed in the recessed portion so that the conductive material layer and the second electrode are in at least partial contact with each other, and light emitted from the light-emitting portion is emitted from the second surface side of the first compound semiconductor layer.

    摘要翻译： 一种制造发光元件组件的方法，包括：具有形成在所述凹部的所述第一表面和所述内表面上的第一表面，面向所述第一表面的第二表面，凹陷部分和导电材料层的支撑基板， 和发光元件。 发光元件具有包括第一化合物半导体层，发光部和第二化合物半导体层的层叠结构，至少第二化合物半导体层和构成台面结构的发光部。 发光元件还包括形成的绝缘层，第二电极和第一电极。 台面结构被放置在凹部中，使得导电材料层和第二电极彼此至少部分接触，并且从发光部分发射的光从第一化合物半导体的第二表面侧发射 层。

    Bi-section semiconductor laser device, method for manufacturing the same, and method for driving the same
    44.
    发明授权
    Bi-section semiconductor laser device, method for manufacturing the same, and method for driving the same 有权
    双段半导体激光装置及其制造方法及其驱动方法

    公开(公告)号：US08329483B2

    公开(公告)日：2012-12-11

    申请号：US12726524

    申请日：2010-03-18

    申请人： Hideki Watanabe ,  Takao Miyajima ,  Masao Ikeda ,  Hiroyuki Yokoyama ,  Tomoyuki Oki ,  Masaru Kuramoto

    发明人： Hideki Watanabe ,  Takao Miyajima ,  Masao Ikeda ,  Hiroyuki Yokoyama ,  Tomoyuki Oki ,  Masaru Kuramoto

    IPC分类号： H01L21/00

    CPC分类号： H01S5/0625 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/0602 ,  H01S5/0658 ,  H01S5/14 ,  H01S5/22 ,  H01S5/3216 ,  H01S5/34333

    摘要： A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion.

    摘要翻译： 一种制造双相半导体激光器件的方法包括以下步骤：（A）形成叠层结构，其通过在基板上依次层叠第一导电类型的第一化合物半导体层，构成第一导电类型的化合物半导体层 发光区域和可饱和吸收区域;以及第二导电类型的第二化合物半导体层; （B）在第二化合物半导体层上形成带状的第二电极; （C）通过使用所述第二电极作为蚀刻掩模蚀刻所述第二化合物半导体层的至少一部分来形成脊结构; 和（D）在第二电极中形成用于形成分隔槽的抗蚀剂层，然后通过湿蚀刻在第二电极中形成分隔槽，使得分离槽将第二电极分离成第一部分和第二部分。

    BI-SECTION SEMICONDUCTOR LASER DEVICE, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR DRIVING THE SAME
    45.
    发明申请
    BI-SECTION SEMICONDUCTOR LASER DEVICE, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR DRIVING THE SAME 有权
    双分半导体激光器件，其制造方法及其驱动方法

    公开(公告)号：US20120281726A1

    公开(公告)日：2012-11-08

    申请号：US13553380

    申请日：2012-07-19

    申请人： Hideki Watanabe ,  Takao Miyajima ,  Masao Ikeda ,  Hiroyuki Yokoyama ,  Tomoyuki Oki ,  Masaru Kuramoto

    发明人： Hideki Watanabe ,  Takao Miyajima ,  Masao Ikeda ,  Hiroyuki Yokoyama ,  Tomoyuki Oki ,  Masaru Kuramoto

    IPC分类号： H01S5/02

    CPC分类号： H01S5/0625 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/0602 ,  H01S5/0658 ,  H01S5/14 ,  H01S5/22 ,  H01S5/3216 ,  H01S5/34333

    摘要： A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion.

    摘要翻译： 一种制造双相半导体激光器件的方法包括以下步骤：（A）形成叠层结构，其通过在基板上依次层叠第一导电类型的第一化合物半导体层，构成第一导电类型的化合物半导体层 发光区域和可饱和吸收区域;以及第二导电类型的第二化合物半导体层; （B）在第二化合物半导体层上形成带状的第二电极; （C）通过使用所述第二电极作为蚀刻掩模蚀刻所述第二化合物半导体层的至少一部分来形成脊结构; 和（D）在第二电极中形成用于形成分隔槽的抗蚀剂层，然后通过湿蚀刻在第二电极中形成分隔槽，使得分离槽将第二电极分离成第一部分和第二部分。

    Semiconductor light receiving element and optical communication system
    46.
    发明授权
    Semiconductor light receiving element and optical communication system 有权
    半导体光接收元件和光通信系统

    公开(公告)号：US08035187B2

    公开(公告)日：2011-10-11

    申请号：US12362066

    申请日：2009-01-29

    申请人： Yoshinori Yamauchi ,  Takahiro Arakida ,  Rintaro Koda ,  Norihiko Yamaguchi ,  Yuji Masui ,  Tomoyuki Oki

    发明人： Yoshinori Yamauchi ,  Takahiro Arakida ,  Rintaro Koda ,  Norihiko Yamaguchi ,  Yuji Masui ,  Tomoyuki Oki

    IPC分类号： H01L31/00

    CPC分类号： H01L31/1055 ,  G02B6/42 ,  G02B6/4206 ,  G02B6/4246

    摘要： The present invention provides a semiconductor light receiving element capable of reducing capacity while minimizing increase in travel time of carriers. The semiconductor light receiving element includes a semiconductor stacked structure including a first conductivity type layer, a light absorbing layer, and a second conductivity type layer having a light incidence plane in order. The semiconductor light receiving element has an oxidation layer including a non-oxidation region and an oxidation region in a stacking in-plane direction in the light absorbing layer or between the first conductivity type layer and the light absorbing layer.

    摘要翻译： 本发明提供一种半导体光接收元件，其能够在最小化载体的行进时间的增加的同时降低容量。 半导体光接收元件包括具有第一导电类型层，光吸收层和具有光入射面的第二导电类型层的半导体堆叠结构。 半导体光接收元件在光吸收层中或第一导电型层与光吸收层之间具有包括非氧化区域和层叠面内方向的氧化区域的氧化层。

    Semiconductor light emitting device
    48.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US07965750B2

    公开(公告)日：2011-06-21

    申请号：US12385811

    申请日：2009-04-21

    申请人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Rintaro Koda ,  Tomoyuki Oki ,  Naoki Jogan

    发明人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Rintaro Koda ,  Tomoyuki Oki ,  Naoki Jogan

    IPC分类号： H01S5/00 ,  H01S3/094

    CPC分类号： H01S5/1833 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18316 ,  H01S5/18322 ,  H01S5/18325 ,  H01S5/18383 ,  H01S5/2086 ,  H01S5/3095 ,  H01S5/4087

    摘要： A semiconductor light emitting device includes a first-conductivity-type first multilayer film reflecting mirror, and a second-conductivity-type second multilayer film reflecting mirror; a cavity layer; and a first conductive section, a second conductive section, and a third conductive section. The cavity layer has a stacked configuration including a first-conductivity-type or undoped first cladding layer, an undoped first active layer, a second-conductivity-type or undoped second cladding layer, a second-conductivity-type first contact layer, a first-conductivity-type second contact layer, a first-conductivity-type or undoped third cladding layer, an undoped second active layer, and a second-conductivity-type or undoped fourth cladding layer. The first conductive section is electrically connected to the first multilayer film reflecting mirror, the second conductive section is electrically connected to the second multilayer film reflecting mirror, and the third conductive section is electrically connected to the first contact layer and the second contact layer.

    摘要翻译： 半导体发光器件包括第一导电型第一多层膜反射镜和第二导电型第二多层膜反射镜; 空腔层; 以及第一导电部分，第二导电部分和第三导电部分。 空腔层具有包括第一导电型或未掺杂的第一包层，未掺杂的第一有源层，第二导电型或未掺杂的第二包覆层，第二导电类型的第一接触层，第一导电类型的第一接触层 导电型第二接触层，第一导电型或未掺杂第三包层，未掺杂的第二有源层和第二导电型或未掺杂的第四包覆层。 第一导电部电连接到第一多层膜反射镜，第二导电部与第二多层膜反射镜电连接，第三导电部与第一接触层和第二接触层电连接。