公开(公告)号：US5895548A

公开(公告)日：1999-04-20

申请号：US626258

申请日：1996-03-29

申请人： Gary C. Ettinger ,  Quanyuan Shang ,  Kam S. Law

发明人： Gary C. Ettinger ,  Quanyuan Shang ,  Kam S. Law

IPC分类号： H05H1/46 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  C23F1/02 ,  H01J7/24 ,  H05H1/24

CPC分类号： H01J37/32357

摘要： A plasma applicator including a cylindrically-shaped outer tube; a cylindrically-shaped plasma tube located within and concentric with the outer tube, and having a first end and a second end; a first support located at the first end of the plasma tube; a seal surrounding the plasma tube at its first end, compressed between the plasma tube and the first support, and located at a first distance from the first end of the plasma tube; and a shield extending a second distance into the plasma tube.

摘要翻译： 一种等离子体施加器，其包括圆柱形外管; 位于所述外管内且与所述外管同心的圆柱形等离子体管，并且具有第一端和第二端; 位于等离子体管的第一端的第一支撑件; 围绕等离子体管的第一端处的密封件，其被压缩在等离子体管和第一支撑件之间，并且位于距离等离子体管的第一端的第一距离处; 以及将第二距离延伸到等离子体管中的屏蔽。

公开(公告)号：US5112776A

公开(公告)日：1992-05-12

申请号：US644853

申请日：1991-01-22

申请人： Jeffrey Marks ,  Kam S. Law ,  David N. Wang ,  Dan Mayden

发明人： Jeffrey Marks ,  Kam S. Law ,  David N. Wang ,  Dan Mayden

IPC分类号： H01L21/3105 ,  H01L21/316 ,  H01L21/768

CPC分类号： H01L21/31604 ,  H01L21/31055 ,  H01L21/76819 ,  Y10S148/133

摘要： A planarizing process is disclosed for planarizing an integrated circuit structure using a low melting inorganic planarizing material which comprises flowing while depositing a low melting inorganic planarizing layer such as a boron oxide glass over a layer of insulating material such as an oxide of silicon and then dry etching the low melting inorganic planarizing layer to planarize the structure. The method eliminates the need for separate coating, drying, and curing steps associated with the application of organic-based planarizing layers usually carried out outside of a vacuum apparatus. In a preferred embodiment, the deposition steps and the etching step are carried out without removing the integrated circuit structure from the vacuum apparatus. An additional etching step may be carried out after depositing the insulating layer and prior to deposition of the planarizing layer to remove any voids formed in the insulating layer.

摘要翻译： 公开了一种用于使用低熔点无机平面化材料对集成电路结构进行平面化的平面化工艺，该无机平面化材料包括在诸如氧化硅玻璃之类的绝缘材料层上沉积低熔点无机平面化层的同时流动，然后干燥 蚀刻低熔点无机平面化层以使结构平坦化。 该方法消除了对通常在真空装置外进行的有机基平坦化层的应用的独立涂布，干燥和固化步骤的需要。 在优选实施例中，沉积步骤和蚀刻步骤在不从真空装置中去除集成电路结构的情况下进行。 在沉积绝缘层之后并且在沉积平坦化层以去除在绝缘层中形成的任何空隙之前，可以进行另外的蚀刻步骤。

公开(公告)号：US08617349B2

公开(公告)日：2013-12-31

申请号：US12906053

申请日：2010-10-15

申请人： Kam S. Law ,  Masato Toshima ,  Wendell Thomas Blonigan ,  Linh Can ,  Robin K. F. Law

发明人： Kam S. Law ,  Masato Toshima ,  Wendell Thomas Blonigan ,  Linh Can ,  Robin K. F. Law

IPC分类号： H01L21/3065 ,  C23C16/00 ,  C23C16/455 ,  C23C16/50 ,  B23P15/16 ,  B23B35/00

CPC分类号： H01J37/32449 ,  C23C16/45565 ,  C23C16/45578 ,  C23C16/50 ,  H01J37/32091 ,  H01J37/3244

摘要： A showerhead for a plasma process apparatus for processing substrates, comprising a showerhead body comprising a top plate and a bottom plate defining a cavity in between; a gas inlet formed in the top plate; a perforated plate positioned between the top plate and the bottom plate and dissecting the cavity into an upper gas compartment and a lower gas compartment; and, wherein the bottom plate comprises a plurality of elongated diffusion slots on its lower surface and a plurality of diffusion holes on its upper surface, each of the diffusion holes making fluid connection from the lower gas compartment to more than one of the diffusion slots.

摘要翻译： 一种用于处理基板的等离子体处理装置的喷头，包括：喷头主体，包括顶板和限定其间的空腔的底板; 形成在顶板中的气体入口; 位于顶板和底板之间的多孔板，并将空腔解剖成上部气室和下部气体隔室; 并且其中所述底板在其下表面上包括多个细长的扩散槽，在其上表面上包括多个扩散孔，每个所述扩散孔使得从所述下部气体隔室到所述扩散槽中的多于一个的流体连接。

公开(公告)号：US06981508B2

公开(公告)日：2006-01-03

申请号：US10856654

申请日：2004-05-27

申请人： Quanyuan Shang ,  Sanjay Yadav ,  William R. Harshbarger ,  Kam S. Law

发明人： Quanyuan Shang ,  Sanjay Yadav ,  William R. Harshbarger ,  Kam S. Law

IPC分类号： B08B9/093

CPC分类号： H01J37/32862 ,  C23C16/4405 ,  Y10S134/902 ,  Y10S438/905

摘要： Provided herein is a method for cleaning a process chamber for semiconductor and/or flat panel display manufacturing. This method comprises the steps of converting a non-cleaning feed gas to a cleaning gas in a remote location and then delivering the cleaning gas to the process chamber for cleaning. Such method may further comprise the step of activating the cleaning gas outside the chamber before the delivery of the gas to the chamber. Also provided is a method of eliminating non-cleaning feed gas from the cleaning gas by cryo condensation.

公开(公告)号：US06902682B2

公开(公告)日：2005-06-07

申请号：US10299876

申请日：2002-11-18

申请人： Quanyuan Shang ,  Robert McCormick Robertson ,  Kam S. Law ,  James T. Gardner

发明人： Quanyuan Shang ,  Robert McCormick Robertson ,  Kam S. Law ,  James T. Gardner

IPC分类号： C23C14/50 ,  C23C16/00 ,  C23C16/458 ,  H01L21/00 ,  H01L21/26 ,  H01L21/31 ,  H01L21/324 ,  H01L21/42 ,  H01L21/469 ,  H01L21/477 ,  H01L21/683 ,  H02N13/00

CPC分类号： C23C16/4583 ,  C23C14/50 ,  C23C16/458 ,  C23C16/4586 ,  H01L21/67069 ,  H01L21/6831 ,  H02N13/00 ,  Y10T279/23

摘要： An apparatus and method for holding a substrate on a support layer in a processing chamber. The method includes the steps of positioning the substrate a predetermined distance from the support layer, introducing a plasma in the processing chamber, lowering the substrate to a point where the substrate engages the support layer, and maintaining the plasma for a predetermined time. The apparatus is directed to a susceptor system for a processing chamber in which a substrate is electrostatically held essentially flat. The apparatus includes a substrate support and a support layer composed of a dielectric material disposed on the substrate support. At least one lift pin is used for supporting the substrate relative to the support layer. Means are provided for moving each lift pin relative to the support layer. Means are also provided for producing a plasma within the processing chamber.

摘要翻译： 一种用于将基板保持在处理室中的支撑层上的装置和方法。 该方法包括以下步骤：将基板与支撑层定位预定距离，在处理室中引入等离子体，将基板降低到基板接合支撑层的点，并将等离子体保持预定时间。 该设备被引导到用于处理室的基座系统，其中基底被静电地保持基本上平坦。 该装置包括基板支撑件和由设置在基板支撑件上的电介质材料构成的支撑层。 至少一个提升销用于相对于支撑层支撑基板。 提供了用于相对于支撑层移动每个升降销的装置。 还提供了用于在处理室内产生等离子体的装置。

公开(公告)号：US06355108B1

公开(公告)日：2002-03-12

申请号：US09338245

申请日：1999-06-22

申请人： Tae Kyung Won ,  Quanyuan Shang ,  Robert M. Robertson ,  Soo Young Choi ,  Kam S. Law ,  Robert I. Greene ,  John M. White

发明人： Tae Kyung Won ,  Quanyuan Shang ,  Robert M. Robertson ,  Soo Young Choi ,  Kam S. Law ,  Robert I. Greene ,  John M. White

IPC分类号： C23C1600

CPC分类号： C23C16/24 ,  C23C16/345 ,  C23C16/4583 ,  C23C16/4585 ,  H01J37/32623

摘要： The present invention relates generally to a clamping and alignment assembly for a substrate processing system. The clamping and aligning assembly generally includes a shadow frame, a floating plasma shield and a plurality of insulating alignment pins. The shadow frame comprises a plurality of tabs extending inwardly therefrom and is shaped to accommodate a substrate. The tabs comprise protruding contact surfaces for stabilizing a substrate on a support member during processing. The insulating alignment pins are disposed at a perimeter of a movable support member and cooperate with an alignment recess formed in the shadow frame to urge the shadow frame into a desired position. Preferably, the floating plasma shield is disposed on the insulating alignment pins in spaced relationship between the support member and the shadow frame to shield the perimeter of the support member during processing.

摘要翻译： 本发明一般涉及用于衬底处理系统的夹紧和对准组件。 夹持和对准组件通常包括阴影框架，浮动等离子体屏蔽件和多个绝缘对准销钉。 阴影框架包括从其向内延伸的多个突片，并且成形为容纳衬底。 突片包括用于在加工期间稳定支撑构件上的基板的突出接触表面。 绝缘对准销布置在可移动支撑构件的周边处，并与形成在阴影框架中的对准凹槽配合，以将阴影框架推动到期望的位置。 优选地，浮动等离子体屏蔽以间隔开的关系设置在绝缘对准销上，在支撑构件和阴影框架之间，以在加工期间屏蔽支撑构件的周边。

公开(公告)号：US06235634B1

公开(公告)日：2001-05-22

申请号：US09082483

申请日：1998-05-20

申请人： John M. White ,  Robert B. Conner ,  Kam S. Law ,  Norman L. Turner ,  William T. Lee ,  Shinichi Kurita

发明人： John M. White ,  Robert B. Conner ,  Kam S. Law ,  Norman L. Turner ,  William T. Lee ,  Shinichi Kurita

IPC分类号： H01L2144

CPC分类号： H01L21/67167 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/67236 ,  H01L21/67721 ,  H01L21/67727 ,  H01L21/67736 ,  H01L21/68707

摘要： The invention provides an apparatus and method for performing a process on a substrate. At least two types of structures may be used to provide a flow path for a substrate so that the substrate may be moved from one processing or loading position to another. The first is a conveyor. The second is a track. The flow path may be a closed continuous loop. Each processing island has a valve for introduction and extraction of the substrate into and out of an interior of the island. The processing island may include load locks, and may include in conjunction therewith an inspection station, a CVD chamber, a PECVD chamber, a PVD chamber, a post-anneal chamber, a cleaning chamber, a descumming chamber, an etch chamber, or a combination of such chambers.

摘要翻译： 本发明提供了一种在衬底上进行处理的装置和方法。 可以使用至少两种类型的结构来提供用于衬底的流动路径，使得衬底可以从一个处理或装载位置移动到另一个。 第一个是输送机。 第二是轨道。 流动路径可以是闭合的连续环路。 每个处理岛具有用于将基板引入和提取到岛内部的阀。 处理岛可以包括负载锁，并且可以包括检查站，CVD室，PECVD室，PVD室，后退火室，清洁室，除污室，蚀刻室或 这些室的组合。

公开(公告)号：US06182603B2

公开(公告)日：2001-02-06

申请号：US09115111

申请日：1998-07-13

申请人： Quanyuan Shang ,  Sheng Sun ,  Kam S. Law ,  Emanuel Beer

发明人： Quanyuan Shang ,  Sheng Sun ,  Kam S. Law ,  Emanuel Beer

IPC分类号： C23C1600

CPC分类号： C23C16/45565 ,  C23C16/4404 ,  C23C16/4405 ,  G03F7/70925 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32522 ,  H01J2237/3325 ,  H01J2237/334 ,  Y10S438/905

摘要： A substrate processing system includes a processing chamber and a plasma source located external to the chamber. A conduit connects the plasma source to an interior region of the chamber to provide a reactive species to the chamber interior for cleaning interior surfaces of the chamber. A shower head, disposed between the plasma source and an interior region of the chamber, can serve as an electrode and also can serve as a gas distribution mechanism. The shower head includes a surface treatment, such as a non-anodized aluminum outer layer, an electro-polished surface of bare aluminum, or a fluorine-based protective outer layer. The surface-treated shower head improves the rate of removal of materials deposited on the interior surfaces of the chamber during cleaning, reduces contamination of substrates during processing, and provides more efficient use of the power source used for heating the substrate during processing.

公开(公告)号：US06177023B1

公开(公告)日：2001-01-23

申请号：US08890743

申请日：1997-07-11

申请人： Quanyuan Shang ,  Robert McCormick Robertson ,  Kam S. Law ,  James T. Gardner

发明人： Quanyuan Shang ,  Robert McCormick Robertson ,  Kam S. Law ,  James T. Gardner

IPC分类号： H02N1300

CPC分类号： C23C16/4583 ,  C23C14/50 ,  C23C16/458 ,  C23C16/4586 ,  H01L21/67069 ,  H01L21/6831 ,  H02N13/00 ,  Y10T279/23

摘要： An apparatus and method for holding a substrate on a support layer in a processing chamber. The method includes the steps of positioning the substrate a predetermined distance from the support layer, introducing a plasma in the processing chamber, lowering the substrate to a point where the substrate engages the support layer, and maintaining the plasma for a predetermined time. The apparatus is directed to a susceptor system for a processing chamber in which a substrate is electrostatically held essentially flat. The apparatus includes a substrate support and a support layer composed of a dielectric material disposed on the substrate support. At least one lift pin is used for supporting the substrate relative to the support layer. Means are provided for moving each lift pin relative to the support layer. Means are also provided for producing a plasma within the processing chamber.

摘要翻译： 一种用于将基板保持在处理室中的支撑层上的装置和方法。 该方法包括以下步骤：将基板与支撑层定位预定距离，在处理室中引入等离子体，将基板降低到基板接合支撑层的点，并将等离子体保持预定时间。 该设备被引导到用于处理室的基座系统，其中基底被静电地保持基本上平坦。 该装置包括基板支撑件和由设置在基板支撑件上的电介质材料构成的支撑层。 至少一个提升销用于相对于支撑层支撑基板。 提供了用于相对于支撑层移动每个升降销的装置。 还提供了用于在处理室内产生等离子体的装置。

公开(公告)号：US06024044A

公开(公告)日：2000-02-15

申请号：US948279

申请日：1997-10-09

申请人： Kam S. Law ,  Robert M. Robertson ,  Quanyuan Shang ,  Jeff Olsen ,  Carl Sorensen

发明人： Kam S. Law ,  Robert M. Robertson ,  Quanyuan Shang ,  Jeff Olsen ,  Carl Sorensen

IPC分类号： C23C16/505 ,  C23C16/509 ,  C23C16/517 ,  H01J37/32 ,  H01L21/205 ,  C23C16/50

CPC分类号： H01J37/32165 ,  C23C16/5096 ,  C23C16/517

摘要： An apparatus deposits a high quality film onto a transparent substrate in a reactor. The transparent substrate may be made of glass, quartz or a polymer such as plastic. The transparent substrate is heated in a process chamber and a process gas stream is introduced into the process chamber. The apparatus generates a high frequency power output and a low frequency power output from a high frequency power supply and a low frequency power supply, respectively. The high frequency power output is generated at a frequency of about thirteen megahertz or more, and at a power from about one to five kilowatts, while the low frequency power output is generated at a frequency of about two megahertz or less, and at a power from about 300 to two kilowatts. The high frequency power output and the low frequency power output are superimposed and used to excite a plasma from the process gas stream at a pressure between about 0.4 Torr and 3 Torr, and at a temperature between about 250.degree. C. and 450.degree. C. to deposit a smooth thin film onto the transparent substrate.

摘要翻译： 一种装置将高质量的膜沉积在反应器中的透明基板上。 透明基材可以由玻璃，石英或聚合物如塑料制成。 将透明基板在处理室中加热并将工艺气体流引入处理室。 该装置分别从高频电源和低频电源产生高频功率输出和低频功率输出。 高频功率输出以大约十三兆赫或更高的频率和大约一到五千瓦的功率产生，而低频功率输出是以大约2兆赫或更小的频率产生的 约300至2千瓦。 高频功率输出和低频功率输出被叠加并用于在约0.4托和3托之间的压力下以及在约250℃至450℃之间的温度下从工艺气流中激发等离子体。 以将平滑的薄膜沉积在透明基板上。