摘要:
A developing device including a rotatable developing sleeve confronting an electrostatic latent image support member, a supply device for supplying developer to a peripheral surface of the developing sleeve, a bristle height regulating member, a device for removing from the peripheral surface of the developing sleeve, the developer having passed through a developing region, a cutoff device for cutting off supply of the developer from the supply device to the developing sleeve, which is retractably projected into a developer supply region defined between the developing sleeve and the supply device and a magnet member provided fixedly in the developing sleeve and having a developing magnetic pole confronting the support member, a first magnetic pole confronting the bristle height regulating member and a second magnetic pole of a polarity identical with that of the first magnetic pole such that the developer is continuously held in an erect state on the developing sleeve by the first and second magnetic poles.
摘要:
A photoresist material for lithography using a light of 220 nm or less which comprises at least a polymer represented by the following formula (2) and a photo-acid generator for generating an acid by exposure: wherein R1, R2, R3 and R5 are each a hydrogen atom or a methyl group; R4 is an acid-labile group or one of a specified subset of alicyclic hydrocarbon groups, alicyclic hydrocarbon groups, or hydrocarbon groups; R6 is a hydrogen atom or one of a specified subset of hydrocarbon groups or alicyclic hydrocarbon groups; x, y and z are optional values which meet x+y+z=1, 0
摘要翻译:一种用于光刻的光致抗蚀剂材料,其使用220nm以下的光,其至少包含由下式(2)表示的聚合物和通过曝光产生酸的光酸发生剂:其中R1,R2,R3和R5各自 氢原子或甲基; R4是酸不稳定基团或脂环族烃基,脂环族烃基或烃基的特定子集之一; R6是氢原子或烃基或脂环烃基的特定子集之一; x,y和z是满足x + y + z = 1,0,0
摘要:
A semiconductor device including a metal frame having a penetrating opening; a semiconductor chip provided in the opening; an insulating layer provided on the upper surface of the metal frame such that the insulating layer covers the upper surface, which is the circuit-formed surface of the semiconductor chip; an interconnect layer provided only on the upper-surface side of the metal frame with intervention of the insulating material and electrically connected to a circuit of the semiconductor chip; a via conductor provided on the upper surface of said semiconductor chip to electrically connect the circuit of the semiconductor chip and the interconnect layer; and a resin layer provided on the lower surface of the metal frame.
摘要:
There are here disclosed a photoresist material for lithography using a light of 220 nm or less which comprises at least a polymer represented by the following formula (2) and a photo-acid generator for generating an acid by exposure: wherein R1, R2, R3 and R5 are each a hydrogen atom or a methyl group; R4 is an acid-labile group, an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has an acid labile group, an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has a carboxyl group, or a hydrocarbon group having 3 to 13 carbon atoms, which has an epoxy group; R6 is a hydrogen atom, a hydrocarbon group having 1 to 12 carbon atoms, or an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has a carboxyl group; x, y and z are optional values which meet x+y+z=1, 0
摘要翻译:这里公开了使用220nm以下的光的光刻胶材料,该光致抗蚀剂材料至少包含由下式(2)表示的聚合物和通过曝光产生酸的光酸发生剂:其中R1,R2,R3 和R 5各自为氢原子或甲基; R4是酸不稳定基团,具有7〜13个碳原子的脂环族烃基,其具有酸不稳定基团,具有7〜13个碳原子的脂环族烃基,其具有羧基或具有3〜 13个碳原子,其具有环氧基; R6为氢原子,碳原子数1〜12的烃基或碳原子数为7〜13的脂环族烃基,具有羧基; x,y和z是满足x + y + z = 1,0,0
摘要:
A semiconductor device includes: at least one semiconductor element having electrode terminals; a metal plate supporting the semiconductor element; and a wiring board covering the semiconductor element and including a plurality of insulating layers and wiring layers alternately stacked and external connection terminals on a surface, the wiring layers being electrically connected to each other by vias. The electrode terminals and the external connection terminals are electrically connected via at least one of the wiring layers and the vias. At least one of the electrode terminals, the is wiring layers, and the vias is electrically connected to the metal plate.
摘要:
The present invention has an object to provide a photosensitive resin composition for optical waveguide formation, which has low transmission loss and can form a waveguide pattern with high shape accuracy at low cost; an optical waveguide; and a method for producing an optical waveguide. The present invention provides a photosensitive resin composition for optical waveguide formation comprising at least: a polymer containing at least a (meth)acrylate structure unit having an epoxy structure, and a (meth)acrylate structure unit having a lactone structure and/or a vinyl monomer structure unit having an aromatic structure; and a photoacid generator, of which one or both of a core layer and a cladding layer are formed of a cured product.
摘要:
There are provided polymer optical waveguide forming material, a polymer optical waveguide and a manufacturing method of the polymer optical waveguide which reduces transmission loss with good processability. The polymer optical waveguide forming material is comprised of a polymer containing norbornene-based structural units including a hydroxy group; a photoacid generator for generating acid by irradiation of an actinic ray; and a monomer component polymerized by acid generated by said photoacid generator.
摘要:
The present invention relates to a novel (meth)acrylamide compound represented by the general formula (1), a (co)polymer of the (meth)acrylamide compound, and a chemically amplified photosensitive resin composition composed of the polymer and a photoacid generator. In the formula, R1 represents a hydrogen atom or a methyl group; R2 represents an acid-decomposable group; and R3 to R6 independently represent a hydrogen atom, a halogen atom or an alkyl group having 1 to 4 carbon atoms.
摘要翻译:本发明涉及由通式(1)表示的新型(甲基)丙烯酰胺化合物,(甲基)丙烯酰胺化合物的(共)聚合物和由聚合物和光酸产生剂组成的化学增幅感光性树脂组合物。 在该式中,R 1表示氢原子或甲基; R2代表酸可分解基团; R 3〜R 6独立地表示氢原子,卤素原子或碳原子数1〜4的烷基。
摘要:
An oxide layer and a metal layer composed of a gold- or platinum-group metal are formed in the stated order on a substrate. A wiring body having a wiring layer, insulating layer, via, and electrode is formed on the metal layer. A semiconductor element is then connected as a flip chip via solder balls on the wiring body electrode, and underfill is introduced between the semiconductor element and the wiring body. Subsequently, a sealing resin layer is formed so as to cover the semiconductor element and the surface of the wiring body on which the semiconductor element is mounted, thus producing a semiconductor package. A high-density, detailed, thin semiconductor package can thereby be realized.
摘要:
There is disclosed a photosensitive resin composition for interlayer insulating films, surface protection films or the like, which exhibits excellent resolution and can be developed with an aqueous alkaline solution. The photosensitive resin composition is prepared using a polymer at least having a constitutional repeating unit represented by general formula II: wherein R1 represents hydrogen atom or methyl group; R2 to R9 independently represent hydrogen atom, halogen atom or alkyl group having 1 to 4 carbon atoms; X represents —CH═N—, —CONH—, —(CH2)n—CH═N— or —(CH2)n—CONH— and the N atom in X is bonded to a carbon atom in the benzene ring having AO— at an o-position; A represents hydrogen atom or a group being decomposed by an acid; and n represents a positive integer of 1 to 3.