公开(公告)号：US20170263776A1

公开(公告)日：2017-09-14

申请号：US15606044

申请日：2017-05-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Masami JINTYOU

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12

Abstract: A change in electrical characteristics in a semiconductor device including an oxide semiconductor film is inhibited, and the reliability is improved. The semiconductor device includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film, a source electrode electrically connected to the oxide semiconductor film, a drain electrode electrically connected to the oxide semiconductor film, a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, a first metal oxide film over the second insulating film, and a second metal oxide film over the first metal oxide film. The first metal oxide film contains at least one metal element that is the same as a metal element contained in the oxide semiconductor film. The second metal oxide film includes a region where the second metal oxide film and the first metal oxide film are mixed.

公开(公告)号：US20170243759A1

公开(公告)日：2017-08-24

申请号：US15431002

申请日：2017-02-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masami JINTYOU ,  Junichi KOEZUKA ,  Takashi HAMOCHI ,  Yasuharu HOSAKA

IPC: H01L21/385 ,  H01L21/44 ,  H01L21/4757 ,  H01L21/443 ,  H01L29/66 ,  H01L21/02 ,  H01L29/49 ,  H01L29/786 ,  H01L29/04

CPC classification number: H01L21/385 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02323 ,  H01L21/02326 ,  H01L21/0234 ,  H01L21/44 ,  H01L21/443 ,  H01L21/4757 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869

Abstract: The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The second insulating film comprises a silicon oxynitride film. When excess oxygen is added to the second insulating film by oxygen plasma treatment, oxygen can be efficiently supplied to the oxide semiconductor film.

公开(公告)号：US20170104018A1

公开(公告)日：2017-04-13

申请号：US15289621

申请日：2016-10-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Takahiro SATO ,  Masami JINTYOU

IPC: H01L27/12

CPC classification number: H01L27/1288 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: In a semiconductor device including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. A miniaturized transistor including an oxide semiconductor is provided. A method for manufacturing a semiconductor device including an oxide semiconductor film includes the following steps: forming an oxide semiconductor film; forming an insulating film over the oxide semiconductor film; forming a conductive film over the insulating film; forming a first protective film over the conductive film; and forming a second protective film over the first protective film. The first protective film, the conductive film, and the insulating film are processed using the second protective film as a mask. After the second protective film is removed, the conductive film and the insulating film are processed using the first protective film as a mask to have a smaller area than that of the second protective film.

公开(公告)号：US20160293641A1

公开(公告)日：2016-10-06

申请号：US15187106

申请日：2016-06-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro SATO ,  Yasutaka NAKAZAWA ,  Takayuki CHO ,  Shunsuke KOSHIOKA ,  Hajime TOKUNAGA ,  Masami JINTYOU

IPC: H01L27/12 ,  H01L29/786 ,  G02F1/1362 ,  H01L29/66 ,  G02F1/1368 ,  H01L27/32 ,  H01L29/04

CPC classification number: H01L29/7869 ,  G02F1/136277 ,  G02F1/1368 ,  H01L21/02365 ,  H01L21/02403 ,  H01L21/02422 ,  H01L21/02551 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/30604 ,  H01L21/465 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/3248 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78693 ,  H01L29/78696

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

公开(公告)号：US20160276486A1

公开(公告)日：2016-09-22

申请号：US15070306

申请日：2016-03-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Masami JINTYOU ,  Daisuke KUROSAKI ,  Takahiro IGUCHI ,  Naoto GOTO ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696

Abstract: To suppress a change in electrical characteristics and improve reliability in a transistor including an oxide semiconductor film. Provided is a semiconductor device including a transistor including a first gate electrode, a first insulating film over the first gate electrode, a first oxide semiconductor film over the first insulating film, a source electrode electrically connected to the first oxide semiconductor film, a drain electrode electrically connected to the first oxide semiconductor film, a second insulating film over the first oxide semiconductor film, a second oxide semiconductor film as a second gate electrode over the second insulating film, and a third insulating film over the second oxide semiconductor film. The second insulating film includes an excess oxygen region having a concentration gradient.

Abstract translation: 抑制包含氧化物半导体膜的晶体管的电特性变化和提高可靠性。 本发明提供一种半导体器件，包括晶体管，其包括第一栅电极，第一栅电极上的第一绝缘膜，第一绝缘膜上的第一氧化物半导体膜，电连接到第一氧化物半导体膜的源电极，漏电极 电连接到第一氧化物半导体膜，在第一氧化物半导体膜上方的第二绝缘膜，在第二绝缘膜上的作为第二栅电极的第二氧化物半导体膜，以及在第二氧化物半导体膜上的第三绝缘膜。 第二绝缘膜包括具有浓度梯度的过量氧区域。

公开(公告)号：US20160260837A1

公开(公告)日：2016-09-08

申请号：US15058832

申请日：2016-03-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Yasuharu HOSAKA ,  Masami JINTYOU ,  Takahiro IGUCHI ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L21/02 ,  H01L29/24 ,  H01L29/04

CPC classification number: H01L29/7869 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696

Abstract: To suppress a change in electrical characteristics in a transistor including an oxide semiconductor film. The transistor includes a first gate electrode, a first insulating film, an oxide semiconductor film, a source electrode, a drain electrode, a second insulating film, a second gate electrode, and a third insulating film. The oxide semiconductor film includes a first oxide semiconductor film on the first gate electrode side, and a second oxide semiconductor film over the first oxide semiconductor film. The first oxide semiconductor film and the second oxide semiconductor film include In, M, and Zn (M is Al, Ga, Y, or Sn). In a region of the second oxide semiconductor film, the number of atoms of In is smaller than that in the first oxide semiconductor film. The second gate electrode includes at least one metal element included in the oxide semiconductor film.

Abstract translation: 抑制包含氧化物半导体膜的晶体管的电特性的变化。 晶体管包括第一栅电极，第一绝缘膜，氧化物半导体膜，源电极，漏电极，第二绝缘膜，第二栅电极和第三绝缘膜。 氧化物半导体膜包括第一栅电极侧的第一氧化物半导体膜和第一氧化物半导体膜上的第二氧化物半导体膜。 第一氧化物半导体膜和第二氧化物半导体膜包括In，M和Zn（M是Al，Ga，Y或Sn）。 在第二氧化物半导体膜的区域中，In的原子数小于第一氧化物半导体膜中的原子数。 第二栅电极包括包含在氧化物半导体膜中的至少一个金属元件。

公开(公告)号：US20160133651A1

公开(公告)日：2016-05-12

申请号：US14982042

申请日：2015-12-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki MIYAKE ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1237 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/7869

Abstract: A light-emitting device capable of suppressing variation in luminance among pixels is provided. A light-emitting device includes a pixel and first and second circuits. The first circuit has a function of generating a signal including a value of current extracted from the pixel. The second circuit has a function of correcting an image signal by the signal. The pixel includes at least a light-emitting element and first and second transistors. The first transistor has a function of controlling supply of the current to the light-emitting element by the image signal. The second transistor has a function of controlling extraction of the current from the pixel. A semiconductor film of each of the first and second transistors includes a first semiconductor region overlapping with a gate, a second semiconductor region in contact with a source or a drain, and a third semiconductor region between the first and second semiconductor regions.

公开(公告)号：US20150372022A1

公开(公告)日：2015-12-24

申请号：US14733052

申请日：2015-06-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi OKAZAKI ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Takahiro IGUCHI

IPC: H01L27/12 ,  H01L29/51

CPC classification number: H01L27/1225 ,  H01L29/513 ,  H01L29/66969 ,  H01L29/7869

Abstract: A change in electrical characteristics can be inhibited and reliability can be improved in a semiconductor device including an oxide semiconductor. The semiconductor device including an oxide semiconductor film includes a first insulating film, the oxide semiconductor film over the first insulating film, a second insulating film over the oxide semiconductor film, and a third insulating film over the second insulating film. The second insulating film includes oxygen and silicon, the third insulating film includes nitrogen and silicon, and indium is included in a vicinity of an interface between the second insulating film and the third insulating film.

Abstract translation: 在包括氧化物半导体的半导体器件中，可以抑制电特性的变化并提高可靠性。 包括氧化物半导体膜的半导体器件包括第一绝缘膜，第一绝缘膜上的氧化物半导体膜，氧化物半导体膜上的第二绝缘膜，以及在第二绝缘膜上的第三绝缘膜。 第二绝缘膜包括氧和硅，第三绝缘膜包括氮和硅，并且铟包括在第二绝缘膜和第三绝缘膜之间的界面附近。

公开(公告)号：US20150263174A1

公开(公告)日：2015-09-17

申请号：US14640379

申请日：2015-03-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Yukinori SHIMA ,  Masami JINTYOU ,  Daisuke KUROSAKI ,  Masataka NAKADA

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/36 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78621 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: In a semiconductor device including a transistor, the transistor is provided over a first insulating film, and the transistor includes an oxide semiconductor film over the first insulating film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the oxide semiconductor film and the gate electrode, and a source and a drain electrodes electrically connected to the oxide semiconductor film. The first insulating film includes oxygen. The second insulating film includes hydrogen. The oxide semiconductor film includes a first region in contact with the gate insulating film and a second region in contact with the second insulating film. The first insulating film includes a third region overlapping with the first region and a fourth region overlapping with the second region. The impurity element concentration of the fourth region is higher than that of the third region.

Abstract translation: 在包括晶体管的半导体器件中，晶体管设置在第一绝缘膜上，并且晶体管包括在第一绝缘膜上的氧化物半导体膜，氧化物半导体膜上的栅极绝缘膜，栅极绝缘膜上的栅电极 ，在氧化物半导体膜和栅电极之上的第二绝缘膜，以及电连接到氧化物半导体膜的源极和漏极。 第一绝缘膜包括氧。 第二绝缘膜包括氢。 氧化物半导体膜包括与栅极绝缘膜接触的第一区域和与第二绝缘膜接触的第二区域。 第一绝缘膜包括与第一区域重叠的第三区域和与第二区域重叠的第四区域。 第四区域的杂质元素浓度高于第三区域的杂质元素浓度。

公开(公告)号：US20150221777A1

公开(公告)日：2015-08-06

申请号：US14684774

申请日：2015-04-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiaki OIKAWA ,  Masayuki KAJIWARA ,  Masataka NAKADA ,  Masami JINTYOU ,  Shunpei YAMAZAKI

IPC: H01L29/786

CPC classification number: H01L27/1266 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/3114 ,  H01L27/1214 ,  H01L29/78606 ,  H01L29/78666 ,  H01L29/78669 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/19041 ,  H01L2924/00

Abstract: An object is to improve water resistance and reliability of a semiconductor device by reducing the degree of peeling of a film. In a semiconductor device, a first inorganic insulating layer, a semiconductor element layer, a second inorganic insulating layer, an organic insulating layer, and a third inorganic insulating layer are sequentially stacked over a substrate. The second inorganic insulating layer is in contact with the first inorganic insulating layer in an opening portion provided in the semiconductor element layer. The third inorganic insulating layer is in contact with the second inorganic insulating layer in an opening portion provided in the organic insulating layer. In a region where the second inorganic insulating layer and the third inorganic insulating layer are in contact with each other, the second inorganic insulating layer has a plurality of irregularities or openings.