公开(公告)号：US11720026B2

公开(公告)日：2023-08-08

申请号：US16466864

申请日：2017-12-15

Applicant: Tokyo Electron Limited

Inventor： Akiko Kai ,  Kousuke Yoshihara ,  Kouichirou Tanaka ,  Hiroshi Ichinomiya

IPC: G03F7/32 ,  H01L21/67 ,  H01L21/687 ,  G03F7/00

CPC classification number: G03F7/32 ,  H01L21/6715 ,  H01L21/67051 ,  H01L21/67098 ,  H01L21/68764 ,  G03F7/70925

Abstract: A developing treatment method performs a developing treatment on a resist film on a substrate. The method includes: a pattern forming step of forming a resist pattern by supplying a developing solution to the substrate and developing the resist film on the substrate; a coating step of coating the developed substrate with an aqueous solution of a water-soluble polymer; and a rinse step of cleaning the substrate by supplying a rinse solution to the substrate coated with the aqueous solution of the water-soluble polymer.

公开(公告)号：US11141758B2

公开(公告)日：2021-10-12

申请号：US15997788

申请日：2018-06-05

Applicant: Tokyo Electron Limited

Inventor： Kentaro Yoshihara ,  Yuichi Yoshida ,  Naoki Shibata ,  Kousuke Yoshihara

IPC: B05D3/10 ,  B05D3/06 ,  B05D1/00 ,  B05C5/00 ,  H01L51/00 ,  H01L21/027 ,  H01L21/3105

Abstract: A film forming method for forming a coating film by applying a coating solution onto a substrate having projections and recesses formed on a surface thereof by a predetermined pattern, includes: applying the coating solution onto the surface of the substrate to form a thick film having a depth of projections and recesses on a surface of the film of a predetermined value or less and having a film thickness larger than a target film thickness of the coating film; and removing the surface of the thick film to form the coating film having the target film thickness.

公开(公告)号：US10101669B2

公开(公告)日：2018-10-16

申请号：US15109917

申请日：2015-01-13

Applicant: Tokyo Electron Limited

Inventor： Seiji Nagahara ,  Gousuke Shiraishi ,  Satoru Shimura ,  Kousuke Yoshihara ,  Shinichiro Kawakami ,  Masaru Tomono ,  Yuichi Terashita ,  Hironori Mizoguchi

IPC: G03F7/20

Abstract: A technique which, in forming a resist pattern on a wafer, can achieve high resolution and high in-plane uniformity of pattern line width. After forming a resist film on a wafer W and subsequently performing pattern exposure by means of a pattern exposure apparatus, the entire pattern exposure area is exposed by using a flood exposure apparatus. During the flood exposure, the exposure amount is adjusted depending on the exposure position on the wafer based on information on the in-plane distribution of the line width of a resist pattern, previously obtained from an inspection apparatus. Methods for adjusting the exposure amount include a method which adjusts the exposure amount while moving a strip-shaped irradiation area corresponding to the diameter of the wafer, a method which involves intermittently moving an irradiation area, corresponding to a shot area in the preceding pattern exposure, to adjust the exposure amount for each chip.

公开(公告)号：US10068763B2

公开(公告)日：2018-09-04

申请号：US15350150

申请日：2016-11-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kousuke Yoshihara ,  Takafumi Niwa

IPC: H01L21/02 ,  B05C9/12 ,  B05C11/08 ,  B05C13/00 ,  H01L21/687 ,  H01L21/67

Abstract: A method of forming a coating film includes horizontally supporting a substrate, supplying a coating solution to a central portion of the substrate and spreading the coating solution by a centrifugal force by rotating the substrate at a first rotational speed, decreasing a speed of the substrate from the first rotational speed toward a second rotational speed and rotating the substrate at the second rotational speed to make a surface of a liquid film of the coating solution even, supplying a gas to a surface of the substrate when the substrate is rotated at the second rotational speed to reduce fluidity of the coating solution, and drying the surface of the substrate by rotating the substrate at a third rotational speed faster than the second rotational speed.

公开(公告)号：US10048664B2

公开(公告)日：2018-08-14

申请号：US14963802

申请日：2015-12-09

Applicant: Tokyo Electron Limited

Inventor： Takafumi Hasimoto ,  Shinichi Hatakeyama ,  Naoki Shibata ,  Kousuke Yoshihara ,  Minoru Kubota ,  Hiroyuki Ide

IPC: B05C5/00 ,  G05B15/02 ,  H01L21/02 ,  B05C13/02 ,  B05B1/00 ,  B05D1/00 ,  G03F7/16 ,  H01L21/67 ,  B05D3/04 ,  B05D3/10

Abstract: There is provided a coating method which can apply a coating solution uniformly onto a substrate surface while reducing the amount of the coating solution supplied. The coating method for applying a coating solution onto a wafer includes the steps of: supplying a solvent for the coating solution onto the wafer to form an annular liquid film of the solvent in a peripheral area of the wafer; supplying the coating solution to the center of the wafer while rotating the wafer at a first rotational speed (time t1-t2); and allowing the coating solution to spread on the wafer by rotating the wafer at a second rotational speed which is higher than the first rotational speed (time t4-t5). The supply of the solvent is continued until just before the coating solution comes into contact with the liquid film of the solvent (time t0-t3).

公开(公告)号：US10025190B2

公开(公告)日：2018-07-17

申请号：US15106915

申请日：2014-12-15

Applicant: TOKYO ELECTRON LIMITED ,  OSAKA UNIVERSITY

Inventor： Seiji Nagahara ,  Gousuke Shiraishi ,  Satoru Shimura ,  Kousuke Yoshihara ,  Shinichiro Kawakami ,  Masaru Tomono ,  Seiichi Tagawa ,  Akihiro Oshima

IPC: G03F7/20 ,  H01L21/67

Abstract: A substrate treatment system for treating a substrate, includes: a treatment station in which a plurality of treatment apparatuses which treat the substrate are provided; an interface station which directly or indirectly delivers the substrate between an exposure apparatus which is provided outside the substrate treatment system and performs exposure of patterns on a resist film on the substrate, and the substrate treatment system; a light irradiation apparatus which performs post-exposure using UV light on the resist film on the substrate after the exposure of patterns is performed; and a post-exposure station which houses the light irradiation apparatus and is adjustable to a reduced pressure or inert gas atmosphere, wherein the post-exposure station is connected to the exposure apparatus directly or indirectly via a space which is adjustable to a reduced pressure or inert gas atmosphere.

公开(公告)号：US09878267B2

公开(公告)日：2018-01-30

申请号：US15639010

申请日：2017-06-30

Applicant: Tokyo Electron Limited

Inventor： Kousuke Yoshihara ,  Katsunori Ichino ,  Toshinobu Furusho ,  Takashi Sasa ,  Katsuhiro Tsuchiya ,  Yuichi Terashita ,  Hirofumi Takeguchi

IPC: B01D46/46 ,  B01D53/30 ,  B01D19/00 ,  G03F7/16 ,  H01L21/67 ,  G03F7/30

CPC classification number: B01D19/0063 ,  B01D19/0031 ,  B01D19/0068 ,  G03F7/16 ,  G03F7/30 ,  H01L21/6715

Abstract: A solution treatment apparatus connected to a supply nozzle that supplies a treatment solution to a substrate, includes: a supply pipeline connecting a treatment solution storage container and the supply nozzle; a filter apparatus provided in the supply pipeline; a pump on a secondary side of the filter apparatus; a circulation pipeline connecting a discharge side of the pump and an intake side of the filter apparatus; a supply control valve provided in the supply pipeline on a secondary side of the pump; a circulation control valve provided in the circulation pipeline; and a control unit, wherein the control unit opens the circulation control valve and drives the pump when supply of the treatment solution from the supply nozzle to the substrate is stopped by closing the supply control valve, to thereby circulate the treatment solution between the supply pipeline having the filter apparatus and the circulation pipeline.

公开(公告)号：US09817323B2

公开(公告)日：2017-11-14

申请号：US15040362

申请日：2016-02-10

Applicant: Tokyo Electron Limited

Inventor： Yuichi Yoshida ,  Kousuke Yoshihara

IPC: B05B13/04 ,  B05D1/02 ,  G03B27/32 ,  G03B27/52 ,  G03D5/00 ,  G03F7/20 ,  H01L21/02 ,  H01L21/67 ,  G03F7/16 ,  G03F7/30 ,  G03F7/32

CPC classification number: G03F7/70975 ,  G03F7/162 ,  G03F7/3021 ,  G03F7/325 ,  H01L21/02052 ,  H01L21/02104 ,  H01L21/67017 ,  H01L21/67051 ,  H01L21/6715

Abstract: A liquid treatment method includes: supplying a first organic solvent to a substrate with the substrate being held horizontally by a substrate holder; and thereafter supplying a second organic solvent to a substrate held by the substrate holder, the second solvent having a higher cleanliness than the first solvent.

公开(公告)号：US09805958B2

公开(公告)日：2017-10-31

申请号：US15598358

申请日：2017-05-18

Applicant: Tokyo Electron Limited

Inventor： Atsushi Ookouchi ,  Kousuke Yoshihara ,  Hiroshi Ichinomiya ,  Hirosi Nisihata ,  Ryouichirou Naitou

IPC: H01L21/67 ,  B08B3/00 ,  B08B7/00

CPC classification number: H01L21/67051

Abstract: A cleaning liquid and a gas are discharged in sequence to a central portion of a substrate while the substrate is being rotated, and after nozzles that discharge them are moved to a peripheral edge side of the substrate, discharge of the cleaning liquid is switched to a second cleaning liquid nozzle set at a position deviated from a movement locus of the first cleaning liquid nozzle. Both of the nozzles are moved toward the peripheral edge side of the substrate while discharging the cleaning liquid and discharging the gas so that a difference between a distance from the discharge position of the second cleaning liquid nozzle to the central portion of the substrate and a distance from the discharge position of the gas nozzle to the central portion of the substrate gradually decreases.

公开(公告)号：US09741559B2

公开(公告)日：2017-08-22

申请号：US14764687

申请日：2014-01-23

Applicant: Tokyo Electron Limited

Inventor： Satoru Shimura ,  Fumiko Iwao ,  Kousuke Yoshihara

IPC: H01L21/02 ,  B05C9/12 ,  B05C9/14 ,  B05C11/10 ,  H01L21/66 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/67 ,  H01L21/027 ,  B05C11/08

CPC classification number: H01L21/02348 ,  B05C9/12 ,  B05C9/14 ,  B05C11/08 ,  B05C11/1015 ,  H01L21/02118 ,  H01L21/0271 ,  H01L21/31055 ,  H01L21/31138 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6715 ,  H01L21/67178 ,  H01L21/6719 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: The present invention is to form an organic film on a substrate having a pattern formed on a front surface thereof and configured to: apply an organic material onto the substrate; then thermally treat the organic material to form an organic film on the substrate; and then perform ultraviolet irradiation processing on the organic film to remove a surface of the organic film down to a predetermined depth, thereby appropriately and efficiently form the organic film on the substrate.