公开(公告)号：US08212364B2

公开(公告)日：2012-07-03

申请号：US11440116

申请日：2006-05-25

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno ,  Koichiro Tanaka

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno ,  Koichiro Tanaka

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/02667 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/6835 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68354 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2223/54473 ,  H01L2224/1134 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/29198 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/83102 ,  H01L2224/83192 ,  H01L2224/92125 ,  H01L2224/92247 ,  H01L2225/06524 ,  H01L2225/06555 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15183 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/3512

摘要： The present invention is directed to a semiconductor device having: an interposer; a wiring provided on the interposer; a first chip having a first semiconductor device, a first pad and a first solder ball over the interposer, the first semiconductor device being connected to the first pad and the first pad being connected to the first solder ball; a second chip having a second semiconductor device, a second pad and a second solder ball over the first chip, the second semiconductor device being connected to the second pad and the second pad being connected to the second solder ball; and a terminal provided at a rear side of the interposer, where the wiring and the first chip are connected via the first solder ball, where the first chip and the second chip are connected via the second solder ball, and where the terminal is connected to the first semiconductor device.

摘要翻译： 本发明涉及一种具有：插入件的半导体器件; 布置在插入器上的布线; 第一芯片，具有第一半导体器件，第一焊盘和位于插入件上的第一焊球，第一半导体器件连接到第一焊盘，第一焊盘连接到第一焊球; 具有第二半导体器件的第二芯片，第二焊盘和位于第一芯片上的第二焊球，第二半导体器件连接到第二焊盘，第二焊盘连接到第二焊球; 以及设置在所述插入件的后侧的端子，其中所述布线和所述第一芯片经由所述第一焊球连接，其中所述第一芯片和所述第二芯片经由所述第二焊球连接，并且所述端子连接到 第一个半导体器件。

公开(公告)号：US08174029B2

公开(公告)日：2012-05-08

申请号：US13082104

申请日：2011-04-07

申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masayuki Sakakura ,  Toru Takayama

发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masayuki Sakakura ,  Toru Takayama

IPC分类号： H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L27/3244 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/3246 ,  H01L27/3258 ,  H01L29/16 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78675 ,  H01L29/78696 ,  H01L51/5008 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/566

摘要： The purpose of the invention is to improve reliability of a light emitting apparatus comprising TFTs and organic light emitting elements. The light emitting apparatus according to the invention having thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode layer formed on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the anode layer, an organic compound layer formed in contact with the anode layer and the fourth inorganic insulation layer and containing light emitting material, and a cathode layer formed in contact with the organic compound layer containing the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride.

摘要翻译： 本发明的目的是提高包括TFT和有机发光元件的发光装置的可靠性。 根据本发明的具有薄膜晶体管和发光元件的发光装置包括： 栅电极上的第二无机绝缘层，第二无机绝缘层上的第一有机绝缘层，第一有机绝缘层上的第三无机绝缘层，形成在第三无机绝缘层上的阳极层，第二有机绝缘层 与阳极层的端部重叠并且具有35度至45度的倾斜角度;形成在第二有机绝缘层的上表面和侧表面上并且在阳极层上具有开口的第四无机绝缘层，有机化合物 形成为与阳极层和第四无机绝缘层接触且含有发光材料的层，以及与含有发光材料的有机化合物层接触形成的阴极层，其中第三无机绝缘层和第四无机绝缘层 由氮化硅或氮化铝形成。

公开(公告)号：US08044946B2

公开(公告)日：2011-10-25

申请号：US12823182

申请日：2010-06-25

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Yasuyuki Arai ,  Noriko Shibata

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Yasuyuki Arai ,  Noriko Shibata

IPC分类号： H05K5/00

CPC分类号： H01L51/0024 ,  G02F1/13306 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/13452 ,  G02F1/13454 ,  G02F1/1368 ,  G02F2001/13456 ,  G02F2202/28 ,  H01L21/2007 ,  H01L21/67196 ,  H01L21/67207 ,  H01L21/67236 ,  H01L21/6835 ,  H01L21/76251 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1266 ,  H01L27/1274 ,  H01L27/15 ,  H01L27/3248 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/78675 ,  H01L51/003 ,  H01L51/5012 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/5096 ,  H01L51/5206 ,  H01L51/5221 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05025 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2225/06524 ,  H01L2225/06548 ,  H01L2225/06555 ,  H01L2225/06586 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/308 ,  H01L2251/5323 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01025 ,  H01L2924/01046 ,  H01L2924/01055 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/12044 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/05099

摘要： The present invention intends to realize a narrow frame of a system on panel. In addition to this, a system mounted on a panel is intended to make higher and more versatile in the functionality. In the invention, on a panel on which a pixel portion (including a liquid crystal element, a light-emitting element) and a driving circuit are formed, integrated circuits that have so far constituted an external circuit are laminated and formed. Specifically, of the pixel portion and the driving circuit on the panel, on a position that overlaps with the driving circuit, any one kind or a plurality of kinds of the integrated circuits is formed by laminating according to a transcription technique.

摘要翻译： 本发明旨在实现面板上系统的窄帧。 除此之外，安装在面板上的系统旨在使功能更高更通用。 在本发明中，在形成有像素部（包括液晶元件，发光元件）和驱动电路的面板上，层叠形成了构成外部电路的集成电路。 具体地，在面板上的像素部分和驱动电路中，在与驱动电路重叠的位置上，根据转录技术层叠形成任何一种或多种集成电路。

公开(公告)号：US08012854B2

公开(公告)日：2011-09-06

申请号：US13045560

申请日：2011-03-11

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

IPC分类号： H01L21/30

CPC分类号： H01L27/1218 ,  H01L23/291 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78603 ,  H01L51/0002 ,  H01L51/0021 ,  H01L51/0024 ,  H01L51/003 ,  H01L2221/68368 ,  H01L2924/0002 ,  Y10S438/928 ,  Y10S438/982 ,  H01L2924/00

摘要： It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.

摘要翻译： 本发明的目的是提供一种不会对被剥离层造成损伤的剥离方法，并且不仅使表面积小的层被剥离，而且还允许具有大表面积的被剥离层 要完全去皮。 此外，本发明的另一个目的是将要剥离的层粘合到各种基材上以提供更轻的半导体器件及其制造方法。 特别地，目的是将由TFT表示的各种元素（薄膜二极管，包含硅的PIN结的光电转换元件或硅电阻元件）粘合到柔性膜上以提供更轻的半导体器件和 其制造方法。

公开(公告)号：US07816191B2

公开(公告)日：2010-10-19

申请号：US11786880

申请日：2007-04-13

申请人： Toru Takayama ,  Keiji Sato ,  Shunpei Yamazaki

发明人： Toru Takayama ,  Keiji Sato ,  Shunpei Yamazaki

IPC分类号： H01L21/00

CPC分类号： C23C14/185 ,  G02F2001/136295 ,  H01L21/2855 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L2029/7863 ,  H01L2924/0002 ,  H01L2924/00

摘要： By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature at 300° C. or less, setting the sputtering power from 1 kW to 9 kW, and setting the sputtering gas pressure from 1.0 Pa to 3.0 Pa, the film stress of a film is made from −1 ×1010cm2 to 1×1010 dyn/cm2. By thus using a conducting film in which the amount of sodium contained within the film is equal to or less than 0.3 ppm, preferably equal to or less than 0.1 ppm, and having a low electrical resistivity (equal to or less than 40 μΩ•cm), as a gate wiring material and a material for other wirings of a TFT, the operating performance and the reliability of a semiconductor device provided with the TFT can be increased.

摘要翻译： 通过使用高纯度靶作为目标，使用单一气体氩（Ar）作为溅射气体，将衬底温度设定在300℃以下，将溅射功率设定为1kW至9kW，并设定 溅射气体压力为1.0Pa〜3.0Pa，膜的膜应力为-1×10 10 cm 2〜1×10 10 dyn / cm 2。 通过这样使用导电膜，其中膜中所含的钠的量等于或小于0.3ppm，优选等于或小于0.1ppm，并具有低电阻率（等于或小于40μ＆OHgr; cm），作为栅极布线材料和TFT的其它布线的材料，可以提高设置有TFT的半导体器件的操作性能和可靠性。

公开(公告)号：US07777409B2

公开(公告)日：2010-08-17

申请号：US12251533

申请日：2008-10-15

申请人： Shunpei Yamazaki ,  Toru Takayama

发明人： Shunpei Yamazaki ,  Toru Takayama

IPC分类号： G09G3/10

CPC分类号： H01L29/78696 ,  G02F1/133305 ,  G02F1/13454 ,  G02F2001/13613 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1266 ,  H01L27/1285 ,  H01L27/3244 ,  H01L29/78603 ,  H01L2924/3511

摘要： The invention relates to a semiconductor device including a plurality of thin film transistors provided on a base member having a curved surface. The surface may be bent in either a convex shape or a concave shape. All channel length directions of the plurality of thin film transistors may also be aligned in the same direction. Further, the channel length direction may be different from the direction in which the base member is bent. A pixel portion and a driver circuit portion may also be provided on the base member. The invention also includes a method of manufacturing a semiconductor device including forming a layer to be peeled including an element of a substrate, bonding a support member to the layer to be peeled, and bonding a transfer body to the layer to be peeled.

摘要翻译： 本发明涉及一种半导体器件，包括设置在具有弯曲表面的基底部件上的多个薄膜晶体管。 表面可以弯曲成凸形或凹形。 多个薄膜晶体管的所有沟道长度方向也可以在相同的方向上对准。 此外，通道长度方向可以不同于基件弯曲的方向。 像素部分和驱动器电路部分也可以设置在基底部件上。 本发明还包括一种制造半导体器件的方法，该半导体器件包括形成包含基片的元件的被剥离层，将支撑构件粘合到待剥离的层上，并将转移体接合到待剥离的层上。

公开(公告)号：US07663238B2

公开(公告)日：2010-02-16

申请号：US12186709

申请日：2008-08-06

申请人： Shunpei Yamazaki ,  Toru Takayama

发明人： Shunpei Yamazaki ,  Toru Takayama

IPC分类号： H01L23/532

CPC分类号： H01L29/4908 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L27/124 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78627 ,  H01L2029/7863 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object of the present invention is to realize a semiconductor device having a high TFT characteristic. In manufacturing an active matrix display device, electric resistivity of the electrode material is kept low by preventing penetration of oxygen ion into the electrode in doping of an impurity ion. A display device having a low electric resistivity can be obtained.

摘要翻译： 本发明的目的是实现具有高TFT特性的半导体器件。 在制造有源矩阵显示装置时，通过在掺杂杂质离子时防止氧离子渗透到电极中，使电极材料的电阻率保持较低。 可以获得具有低电阻率的显示装置。

公开(公告)号：US07622797B2

公开(公告)日：2009-11-24

申请号：US12249523

申请日：2008-10-10

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Yasuyuki Arai ,  Noriko Shibata

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Yasuyuki Arai ,  Noriko Shibata

IPC分类号： G09G3/36

CPC分类号： H01L27/1266 ,  H01L21/6835 ,  H01L27/1214 ,  H01L2221/68368 ,  H01L2224/05172 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/07811 ,  H01L2924/00 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05184

摘要： To provide a thin film device which becomes possible to be formed in the portion which has been considered impossible to be provided with such device by the conventional technique, and to provide a semiconductor device which occupies small space and which has high shock resistance and flexibility, a device formation layer with a thickness of at most 50 μm which was peeled from a substrate by a transfer technique is transferred to another substrate, hence, a thin film device can be formed over various substrates. For instance, a semiconductor device can be formed so as to occupy small space by pasting a thin film device which is transferred to a flexible substrate onto a rear surface of a substrate of a panel, by pasting directly a thin film device onto a rear surface of a substrate of a panel, or by transferring a thin film device to an FPC which is pasted onto a substrate of a panel.

摘要翻译： 为了提供可以在通过常规技术被认为不可能设置这种器件的部分中形成的薄膜器件，并且提供占据小空间并且具有高抗冲击性和柔性的半导体器件， 通过转印技术将从基板剥离的厚度最多为50μm的元件形成层转移到另一基板，因此可以在各种基板上形成薄膜器件。 例如，可以通过将薄膜器件直接粘贴到背面上来形成半导体器件，以便占据较小的空间，该薄膜器件被传送到柔性衬底到面板的衬底的背面上 或者通过将薄膜器件转移到贴在面板的基板上的FPC上。

公开(公告)号：US07456430B1

公开(公告)日：2008-11-25

申请号：US09544801

申请日：2000-04-07

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Toru Takayama ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Toru Takayama ,  Toshiji Hamatani

IPC分类号： H01L29/04

CPC分类号： G02F1/13454 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78645 ,  H01L29/78684

摘要： The invention primarily provides gate electrodes and gate wirings permitting large-sized screens for active matrix-type display devices, wherein, in order to achieve this object, the construction of the invention is a semiconductor device having, on the same substrate, a pixel TFT provided in a display region and a driver circuit TFT provided around the display region, wherein the gate electrodes of the pixel TFT and the driver circuit TFT are formed from a first conductive layer, the gate electrodes are in electrical contact through connectors with gate wirings formed from a second conductive layer, and the connectors are provided outside the channel-forming regions of the pixel TFT and the driver circuit TFT.

摘要翻译： 本发明主要提供允许用于有源矩阵型显示装置的大尺寸屏幕的栅极电极和栅极布线，其中为了实现该目的，本发明的结构是在同一基板上具有像素TFT 设置在显示区域和设置在显示区域周围的驱动电路TFT，其中像素TFT和驱动电路TFT的栅电极由第一导电层形成，栅电极通过与形成的栅极布线的连接器电接触 并且连接器设置在像素TFT和驱动电路TFT的沟道形成区域的外侧。

公开(公告)号：US07407870B2

公开(公告)日：2008-08-05

申请号：US11410073

申请日：2006-04-25

申请人： Junya Maruyama ,  Yumiko Ohno ,  Toru Takayama ,  Yuugo Goto ,  Shunpei Yamazaki

发明人： Junya Maruyama ,  Yumiko Ohno ,  Toru Takayama ,  Yuugo Goto ,  Shunpei Yamazaki

IPC分类号： H01L21/46

CPC分类号： H01L27/1266 ,  H01L21/6835 ,  H01L27/1214 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2924/3025

摘要： The present invention is a separation method for easy separation of an allover release layer with a large area. Further, the present invention is the separating method that is not subjected to restrictions in the use of substrates, such as a kind of substrate, during forming a release layer. A separation method comprising the steps of forming a metal film, a first oxide, and a semiconductor film containing hydrogen in this order; and bonding a support to a release layer containing the first oxide and the semiconductor film and separating the release layer bonded to the support from a substrate provided with the metal layer by a physical means. Through the separation method, heat treatment is carried out to diffuse hydrogen contained in the semiconductor film, a third oxide is formed by reducing a second oxide formed at a surface boundary between the metal film and the first oxide film, and a film containing the second oxide and the third oxide, a surface boundary between the film containing the second oxide and the third oxide, and the metal film, or a surface boundary between the film containing the second oxide and the third oxide, and the first oxide is split.

摘要翻译： 本发明是用于容易地分离大面积的全层释放层的分离方法。 此外，本发明是在形成剥离层期间不受使用诸如基板的基板的限制的分离方法。 一种分离方法，包括以下步骤：依次形成含有氢的金属膜，第一氧化物和半导体膜; 以及将载体接合到包含第一氧化物和半导体膜的剥离层，并且通过物理手段从与设置有金属层的基板分离结合到载体的剥离层。 通过分离方法，进行热处理以扩散半导体膜中所含的氢，通过还原在金属膜和第一氧化物膜之间的表面边界处形成的第二氧化物和包含第二氧化物的膜形成第三氧化物 氧化物和第三氧化物，含有第二氧化物的膜和第三氧化物的膜与金属膜之间的表面边界或含有第二氧化物的膜和第三氧化物之间的表面边界以及第一氧化物被分裂。