公开(公告)号：US08669574B2

公开(公告)日：2014-03-11

申请号：US13002906

申请日：2009-07-07

申请人： Steven Konsek ,  Jonas Ohlsson ,  Yourii Martynov ,  Peter Hanberg

发明人： Steven Konsek ,  Jonas Ohlsson ,  Yourii Martynov ,  Peter Hanberg

IPC分类号： H01L33/00

CPC分类号： H01L33/62 ,  B82Y20/00 ,  F21S41/141 ,  F21S41/663 ,  F21Y2105/10 ,  F21Y2115/10 ,  H01L27/153 ,  H01L27/156 ,  H01L33/08 ,  H01L33/18 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/60 ,  H01L2924/0002 ,  Y10S977/762 ,  Y10S977/95 ,  H01L2924/00

摘要： The device according to the invention comprises a nanostructured LED with a first group of nanowires protruding from a first area of a substrate and a contacting means in a second area of the substrate. Each nanowire of the first group of nanowires comprises a p-i-n junction and a top portion of each nanowire or at least one selection of nanowires is covered with a light-reflecting contact layer. The contacting means of the second area is in electrical contact with the bottom of the nanowires, the light-reflecting contact layer being in electrical contact with the contacting means of the second area via the p-i-n junction. Thus when a voltage is applied between the contacting means of the second area and the light-reflecting contact layer, light is generated within the nanowire. On top of the light-reflecting contact layer, a first group of contact pads for flip-chip bonding can be provided, distributed and separated to equalize the voltage across the layer to reduce the average serial resistance.

摘要翻译： 根据本发明的装置包括具有从衬底的第一区域突出的第一组纳米线的纳米结构LED和在衬底的第二区域中的接触装置。 第一组纳米线的每个纳米线包括p-i-n结和每个纳米线的顶部，或者至少一个纳米线选择被光反射接触层覆盖。 第二区域的接触装置与纳米线的底部电接触，光反射接触层经由p-i-n结与第二区域的接触装置电接触。 因此，当在第二区域的接触装置和光反射接触层之间施加电压时，在纳米线内产生光。 在光反射接触层的顶部，可提供用于倒装芯片接合的第一组接触焊盘，分布和分离以均衡跨越该层的电压以减小平均串联电阻。

公开(公告)号：US20120211727A1

公开(公告)日：2012-08-23

申请号：US13458310

申请日：2012-04-27

申请人： Jonas Ohlsson ,  Lars Samuelson ,  Erik Lind ,  Lars-Erik Wernersson ,  Truls Löwgren

发明人： Jonas Ohlsson ,  Lars Samuelson ,  Erik Lind ,  Lars-Erik Wernersson ,  Truls Löwgren

IPC分类号： H01L29/775 ,  H01L21/283 ,  B82Y40/00 ,  B82Y99/00

CPC分类号： H01L29/7827 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/125 ,  H01L29/495 ,  H01L29/517 ,  H01L29/66439 ,  H01L29/66666 ,  H01L29/775 ,  H01L29/7828 ,  H01L29/78642 ,  H01L33/24 ,  Y10S977/888 ,  Y10S977/89

摘要： The present invention relates to providing layers of different thickness on vertical and horizontal surfaces (15, 20) of a vertical semiconductor device (1). In particular the invention relates to gate electrodes and the formation of precision layers (28) in semiconductor structures comprising a substrate (10) and an elongated structure (5) essentially standing up from the substrate. According to the method of the invention the vertical geometry of the device (1) is utilized in combination with either anisotropic desposition or anisotropic removal of deposited material to form vertical or horizontal layers of very high precision.

摘要翻译： 本发明涉及在垂直半导体器件（1）的垂直和水平表面（15,20）上提供不同厚度的层。 特别地，本发明涉及栅电极和在半导体结构中形成精密层（28），该半导体结构包括基底（10）和基本上从基底上竖立的细长结构（5）。 根据本发明的方法，将装置（1）的垂直几何结构与各向异性沉积或各向异性去除沉积材料结合使用以形成非常高精度的垂直或水平层。

公开(公告)号：US08063450B2

公开(公告)日：2011-11-22

申请号：US12441220

申请日：2007-09-19

申请人： Lars-Erik Wernersson ,  Erik Lind ,  Tomas Bryllert ,  Jonas Ohlsson ,  Truls Löwgren ,  Lars Samuelson ,  Claes Thelander

发明人： Lars-Erik Wernersson ,  Erik Lind ,  Tomas Bryllert ,  Jonas Ohlsson ,  Truls Löwgren ,  Lars Samuelson ,  Claes Thelander

IPC分类号： H01L27/088

CPC分类号： H01L27/0883 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/20 ,  H01L29/775 ,  H01L29/7828

摘要： The present invention relates to vertical nanowire transistors with a wrap-gated geometry. The threshold voltage of the vertical nanowire transistors is controlled by the diameter of the nanowire, the doping of the nanowire, the introduction of segments of heterostructures in the nanowire, the doping in shell-structures surrounding the nanowire, tailoring the work function of the gate stack, by strain engineering, by control of the dielectrica or the choice of nanowire material. Transistors with varying threshold voltages are provided on the same substrate, which enables the design of advanced circuits utilizing the shifts in the threshold voltages, similar to the directly coupled field logic.

摘要翻译： 本发明涉及具有封盖几何形状的垂直纳米线晶体管。 垂直纳米线晶体管的阈值电压由纳米线的直径，纳米线的掺杂，纳米线中的异质结构段的引入，纳米线周围的壳结构中的掺杂来调节，栅极的功函数 堆叠，通过应变工程，通过控制电介质或纳米线材料的选择。 具有不同阈值电压的晶体管设置在相同的基板上，这使得能够利用阈值电压的偏移设计高级电路，类似于直接耦合的场逻辑。

公开(公告)号：US20110254034A1

公开(公告)日：2011-10-20

申请号：US13002906

申请日：2009-07-07

申请人： Steven Konsek ,  Jonas Ohlsson ,  Yourii Martynov ,  Peter Hanberg

发明人： Steven Konsek ,  Jonas Ohlsson ,  Yourii Martynov ,  Peter Hanberg

IPC分类号： H01L33/60 ,  B82Y20/00

CPC分类号： H01L33/62 ,  B82Y20/00 ,  F21S41/141 ,  F21S41/663 ,  F21Y2105/10 ,  F21Y2115/10 ,  H01L27/153 ,  H01L27/156 ,  H01L33/08 ,  H01L33/18 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/60 ,  H01L2924/0002 ,  Y10S977/762 ,  Y10S977/95 ,  H01L2924/00

摘要： The device according to the invention comprises a nanostructured LED with a first group of nanowires protruding from a first area of a substrate and a contacting means in a second area of the substrate. Each nanowire of the first group of nanowires comprises a p-i-n junction and a top portion of each nanowire or at least one selection of nanowires is covered with a light-reflecting contact layer. The contacting means of the second area is in electrical contact with the bottom of the nanowires, the light-reflecting contact layer being in electrical contact with the contacting means of the second area via the p-i-n junction. Thus when a voltage is applied between the contacting means of the second area and the light-reflecting contact layer, light is generated within the nanowire. On top of the light-reflecting contact layer, a first group of contact pads for flip-chip bonding can be provided, distributed and separated to equalize the voltage across the layer to reduce the average serial resistance.

摘要翻译： 根据本发明的装置包括具有从衬底的第一区域突出的第一组纳米线的纳米结构LED和在衬底的第二区域中的接触装置。 第一组纳米线的每个纳米线包括p-i-n结和每个纳米线的顶部，或者至少一个纳米线选择被光反射接触层覆盖。 第二区域的接触装置与纳米线的底部电接触，光反射接触层经由p-i-n结与第二区域的接触装置电接触。 因此，当在第二区域的接触装置和光反射接触层之间施加电压时，在纳米线内产生光。 在光反射接触层的顶部，可提供用于倒装芯片接合的第一组接触焊盘，分布和分离以均衡跨越该层的电压以减小平均串联电阻。

公开(公告)号：US20110180894A1

公开(公告)日：2011-07-28

申请号：US13062018

申请日：2009-09-04

申请人： Lars Samuelson ,  Federico Capasso ,  Jonas Ohlsson

发明人： Lars Samuelson ,  Federico Capasso ,  Jonas Ohlsson

IPC分类号： H01L31/107 ,  B82Y15/00

CPC分类号： H01L31/03529 ,  H01L31/105 ,  H01L31/1075 ,  Y02E10/50

摘要： The present invention provides a photodiode comprising a p-i-n or pn junction at least partly formed by first and second regions (2) made of semiconductor materials having opposite conductivity type, wherein the p-i-n or pn junction comprises a light absorption region (11) for generation of charge carriers from absorbed light. One section of the p-i-n or pn junction is comprises by one or more nanowires (7) that are spaced apart and arranged to collect charge carriers generated in the light absorption region (11). At least one low doped region (10) made of a low doped or intrinsic semiconductor material provided between the nanowires (7) and one of said first region (1) and said second region (2) enables custom made light absorption region and/or avalanche multiplication region of the active region (9).

摘要翻译： 本发明提供了一种光电二极管，其包括至少部分地由具有相反导电类型的半导体材料制成的第一和第二区域（2）形成的pin或pn结，其中pin或pn结包括用于产生 电荷载体从吸收的光。 p-i-n或pn结的一个部分由一个或多个间隔开并布置成收集在光吸收区域（11）中产生的电荷载流子的纳米线（7）构成。 提供在纳米线（7）与所述第一区域（1）和所述第二区域（2）中的一个之间的由低掺杂或本征半导体材料制成的至少一个低掺杂区域（10）使定制的光吸收区域和/或 活动区域（9）的雪崩倍增区域。

公开(公告)号：US20100221882A1

公开(公告)日：2010-09-02

申请号：US12662962

申请日：2010-05-13

申请人： Lars Ivar Samuelson ,  Patrick Svensson ,  Jonas Ohlsson ,  Truls Lowgren

发明人： Lars Ivar Samuelson ,  Patrick Svensson ,  Jonas Ohlsson ,  Truls Lowgren

IPC分类号： H01L21/336

CPC分类号： B82B1/005 ,  B82Y10/00 ,  H01L21/0237 ,  H01L21/02392 ,  H01L21/02521 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02603 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L27/10808 ,  H01L27/10873 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/732 ,  H01L29/7371 ,  H01L29/78642 ,  H01L29/78681 ,  H01L29/78696 ,  H01L33/02 ,  H01L33/18 ,  H01L33/20 ,  H01L33/24 ,  Y10S977/762 ,  Y10S977/938

摘要： The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.

摘要翻译： 本发明涉及包含半导体纳米元件的半导体器件。 具体地说，本发明涉及一种具有体积元件的装置，该体积元件的直径大于与纳米元件外延连接的纳米元件的直径。 体积元件正在被掺杂以便提供高电荷载流子注入纳米元件和电连接中的低访问阻力。 纳米元件可以从半导体衬底直立。 在体积元件上形成的低电阻率材料的同心层形成接触。

公开(公告)号：US07680176B2

公开(公告)日：2010-03-16

申请号：US11412543

申请日：2006-04-27

申请人： Bengt Lindoff ,  Bo Bernhardsson ,  Jonas Ohlsson

发明人： Bengt Lindoff ,  Bo Bernhardsson ,  Jonas Ohlsson

IPC分类号： H04B1/69

CPC分类号： H04B1/712 ,  H04B2201/7071 ,  H04B2201/709727

摘要： According to a method and apparatus taught herein, a Rake receiver circuit selectively operates with or without colored interference compensation, in dependence on current operating conditions. For example, in one embodiment the Rake receiver circuit comprises one or more processing circuits that are configured to generate Rake combining weights in a first mode of operation as first combining weights calculated from channel estimates corresponding to a set of Rake signal fingers. In a second mode, the processing circuit(s) generate the Rake combining weights as compensated combining weights obtained by compensating the first combining weights with second combining weights calculated from colored interference estimates corresponding to a set of Rake probing fingers.

摘要翻译： 根据本文教导的方法和装置，Rake接收器电路根据当前的操作条件选择性地在有或没有有色干涉补偿的情况下操作。 例如，在一个实施例中，Rake接收机电路包括一个或多个处理电路，其被配置为以第一操作模式生成Rake组合权重作为从对应于一组Rake信号指的信道估计计算的第一组合权重。 在第二模式中，处理电路产生Rake组合权重作为通过用对应于一组耙探测手指的有色干涉估计计算的第二组合权重来补偿第一组合权重而获得的补偿组合权重。

公开(公告)号：US20090227257A1

公开(公告)日：2009-09-10

申请号：US12141589

申请日：2008-06-18

申请人： Jonas Ohlsson ,  Simon Hultgren ,  Olof Torstensson

发明人： Jonas Ohlsson ,  Simon Hultgren ,  Olof Torstensson

IPC分类号： H04Q7/20

CPC分类号： H04B7/2684 ,  H04W36/18 ,  H04W56/0045

摘要： In a mobile communications network, drifts in timing of user equipment in soft handover may be accounted for by measuring the offset between the current timing of the user equipment and the first significant path of downlink frames from cells of the active set at first and second instances. Differences in the respective offsets from the first and second instances may be calculated to determine if the drift is unidirectional in time for all cells of the active set. A unidirectional drift in the offsets is indicative of a drift in timing of the user equipment, allowing the current timing to be momentarily unfrozen and updated.

摘要翻译： 在移动通信网络中，软切换中的用户设备的定时漂移可以通过在第一和第二实例中测量用户设备的当前定时与来自活动集的小区的下行链路帧的第一有效路径之间的偏移来考虑 。 可以计算与第一和第二实例的各个偏移量的差异，以确定活动集合的所有单元的漂移是否是单向的。 偏移中的单向漂移表示用户设备的定时漂移，允许当前定时被暂时解冻和更新。

公开(公告)号：US07177602B2

公开(公告)日：2007-02-13

申请号：US10457913

申请日：2003-06-10

申请人： Mikael Ziren ,  Jonas Ohlsson ,  Tatjana Hrnjez ,  Elias Jonsson ,  Bo Bernhardsson

发明人： Mikael Ziren ,  Jonas Ohlsson ,  Tatjana Hrnjez ,  Elias Jonsson ,  Bo Bernhardsson

IPC分类号： H04B1/40 ,  H04B1/04 ,  H04B1/18 ,  H04B7/00

CPC分类号： H03J7/04 ,  H03J2200/02

摘要： An automatic frequency control (AFC) system in an electronic device is operated by using an AFC-algorithm component to determine a frequency error corresponding to a difference between a frequency of a signal output from a signal generator and a received signal frequency. The frequency error determined by the AFC-algorithm component is multiplied by a scaling factor, which is set to zero after an adjustment has been made to change a frequency of the signal output from the signal generator. The scaling factor is increased from zero to one over time. The scaled frequency error is used to determine whether to adjust the frequency of the signal output from the signal generator.

摘要翻译： 通过使用AFC算法组件来操作电子设备中的自动频率控制（AFC）系统，以确定与从信号发生器输出的信号的频率和接收到的信号频率之间的差异相对应的频率误差。 由AFC算法分量确定的频率误差乘以一个缩放因子，该比例因子在进行调整以改变从信号发生器输出的信号的频率之后被设置为零。 缩放因子随着时间的推移从零增加到一个。 缩放的频率误差用于确定是否调整从信号发生器输出的信号的频率。

公开(公告)号：US06907245B2

公开(公告)日：2005-06-14

申请号：US09931580

申请日：2001-08-17

申请人： Jonas Ohlsson ,  Staffan Johansson ,  Daniel Jannok

发明人： Jonas Ohlsson ,  Staffan Johansson ,  Daniel Jannok

IPC分类号： H04W36/18 ,  H04Q7/20

CPC分类号： H04W36/18

摘要： A telecommunications system has a source base station (BSS) and a destination base station (BSD), and a handover unit (100) having a dynamic offset threshold determination unit (102) which establishes a dynamic offset threshold for starting soft handover. When the dynamic offset threshold for soft handover is exceeded, a preliminary portion of a handover sequence is initiated at the destination base station. The preliminary portion of the handover sequence is initiated so that a time-critical handover sequence activity (such as L1 uplink synchronization) is well underway, if not completed, by the time the soft handover is actually needed. The dynamic offset threshold for starting handover is based on a probability that the mobile station will engage in the handover. The probability is a statistical probability that handover will actually occur based on handover history of other mobile stations previously and similarly traveling and of the same signal strength. Another portion of the soft handover sequence (e.g., a remaining portion of the soft handover sequence) is initiated when the signal strength from the destination base station as received at the specified mobile station has a predetermined relationship to a fixed offset threshold.

摘要翻译： 电信系统具有源基站（BSS）和目的地基站（BS SUB），以及具有动态偏移阈值确定单元的切换单元（100） （102），其建立用于开始软切换的动态偏移阈值。 当超过软切换的动态偏移阈值时，在目的地基站发起切换序列的初步部分。 启动切换序列的初步部分，以便在实际需要软切换时，如果没有完成时间关键的切换序列活动（诸如L 1上行链路同步）正在进行中。 用于开始切换的动态偏移阈值基于移动台将进行切换的概率。 概率是根据先前和类似地行进和相同信号强度的其他移动台的切换历史来实际切换的统计概率。 当来自在指定移动台处接收到的目的地基站的信号强度与固定偏移阈值具有预定关系时，开始软切换序列的另一部分（例如，软切换序列的剩余部分）。