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公开(公告)号：US5672252A
公开(公告)日：1997-09-30
申请号：US483835
申请日：1995-06-15
申请人： Shigenori Hayashi , Kazuki Komaki , Takeshi Kamada , Masatoshi Kitagawa , Takashi Deguchi , Ryoichi Takayama , Takashi Hirao
发明人： Shigenori Hayashi , Kazuki Komaki , Takeshi Kamada , Masatoshi Kitagawa , Takashi Deguchi , Ryoichi Takayama , Takashi Hirao
IPC分类号： C23C14/00 , C23C14/08 , C23C14/58 , G02F1/00 , H01L21/314 , H01L21/316 , H01L37/02 , H01L41/316 , C23C14/34
CPC分类号： C23C14/5853 , C23C14/0078 , C23C14/088 , H01L21/02197 , H01L21/02266 , H01L21/314 , H01L21/31691 , H01L37/025 , H01L41/1875 , H01L41/316 , G02F1/0027
摘要： A method whereby perovskite type oxide dielectric thin films with ABO.sub.3 structure are able to be formed with such features as good stability, uniformity, reproducibility, or the like, with high through-put by having a deposition process, wherein the thin films are deposited on a substrate, and a stabilization process, where no deposition of the thin films takes place, repeated alternatingly while the substrate temperature being kept near the temperature at which perovskite type oxide dielectric thin films are formed. Also, by employing (i) a processing method wherein a decomposing excitation of a reactive gas due to plasma takes place on or near the deposition surface in a gaseous atmosphere comprising a gas that reacts with the elements composing the thin films, (ii) a processing method wherein an oxidation reaction takes place on the deposition surface in a gaseous atmosphere comprising at least ozone (O.sub.3), and (iii) a processing method wherein light of short wave length is irradiated on the deposition surface in a gaseous atmosphere comprising at least reactive elements in the non-deposition process, the oxygen concentration in the deposited thin films is adjusted and dielectric thin films of good quality and an extremely low defect content are realized.
摘要翻译： 具有ABO3结构的钙钛矿型氧化物电介质薄膜能够通过具有沉积工艺的高通量形成具有良好的稳定性，均匀性，再现性等特性的方法，其中薄膜沉积在 基板和稳定化处理，其中不存在薄膜的沉积，在衬底温度保持接近形成钙钛矿型氧化物电介质薄膜的温度的同时交替重复。 此外，通过采用以下处理方法：（i）在包含与组成薄膜的元素反应的气体的气体气氛中，在等离子体发生的反应性气体的分解激发发生在沉积表面上或其附近的处理方法，（ii） 处理方法，其中在至少包含臭氧（O 3）的气体气氛中在沉积表面上发生氧化反应，和（iii）其中在至少包括至少包含臭氧（O 3）的气体气氛中在沉积表面上照射短波长的光的处理方法 在非沉积工艺中的非活性元素，沉积的薄膜中的氧浓度被调节，并且实现了良好质量和极低缺陷含量的介电薄膜。
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公开(公告)号：US5130537A
公开(公告)日：1992-07-14
申请号：US674407
申请日：1991-03-25
申请人： Yukio Okamoto , Takashi Iino , Satoshi Shimura , Masamichi Tsukada , Hiromi Yamashita , Masatoshi Kitagawa
发明人： Yukio Okamoto , Takashi Iino , Satoshi Shimura , Masamichi Tsukada , Hiromi Yamashita , Masatoshi Kitagawa
CPC分类号： G01N21/73
摘要： A plasma analyzer for trace element analysis has a gas supply system comprising a plurality of gas sources, an electromagnetic valve provided on a line connecting each gas source to a plasma generating space, a buffer tank provided after the electromagnetic valve on the line, and a flow regulating flowmeter provided after the buffer tank on the line. Each electromagnetic valves is controlled for on-off operation and the corresponding buffer tank suppresses the sudden change of the flow rate of the corresponding gas, so that the composition of the gas supplied to the plasma generating space changes gradually in spite of the simple on-off operation of the electromagnetic valves. Thus, the fluctuation and extinction of the plasma attributable to the sudden change of the composition of the gas supplied to the plasma generating space can be effectively prevented.
摘要翻译： 一种用于微量元素分析的等离子体分析器具有包括多个气体源的气体供给系统，设置在将每个气体源连接到等离子体产生空间的线路上的电磁阀，设置在该线路上的电磁阀之后的缓冲罐，以及 流量调节流量计提供在缓冲罐上的线路上。 每个电磁阀被控制为开 - 关操作，并且相应的缓冲罐抑制相应气体的流量的突然变化，使得提供给等离子体产生空间的气体的组成逐渐变化， 关闭电磁阀的操作。 因此，可以有效地防止由于供给到等离子体产生空间的气体的组成突然变化引起的等离子体的波动和消光。
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公开(公告)号：US4624045A
公开(公告)日：1986-11-25
申请号：US716604
申请日：1985-03-27
IPC分类号： H01L31/042 , H01L23/535 , H01L27/142 , H01L31/0224 , H01L31/04 , H01L31/20 , H01L31/18 , H01L27/14
CPC分类号： H01L31/022425 , H01L23/535 , H01L31/046 , H01L31/0465 , H01L31/202 , H01L2924/0002 , Y02E10/50 , Y02P70/521
摘要： A thin film device such as an amorphous thin film solar battery is easily made with high integration by use of metal-diffused regions in the thin film as an electrical connection region across the thickness of the thin film. By use of such metal-diffused regions 24, 24 . . . for connection between transparent stripe shaped electrodes 21', 21'. . . disposed between glass substrate 20 and amorphous silicon thin film 23 and stripe shaped metal electrodes 25, 25 . . . on the top surface of the thin film 23, series connected solar battery cells can be made with a small number of process steps.
摘要翻译： 诸如非晶薄膜太阳能电池的薄膜器件通过在薄膜中的金属扩散区域作为跨越薄膜厚度的电连接区域的高集成度容易地制成。 通过使用这种金属扩散区域24,24。 。 。 用于透明条状电极21'，21'之间的连接。 。 。 设置在玻璃基板20和非晶硅薄膜23之间以及条状金属电极25,25之间。 。 。 在薄膜23的上表面上，串联的太阳能电池单元可以用少量的工艺步骤制成。
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公开(公告)号：US06974547B1
公开(公告)日：2005-12-13
申请号：US09711234
申请日：2000-11-13
申请人： Naoki Kohara , Taisuke Sawada , Masatoshi Kitagawa
发明人： Naoki Kohara , Taisuke Sawada , Masatoshi Kitagawa
CPC分类号： H05K1/162 , H01G4/08 , H05K1/0393 , H05K3/388 , H05K2201/0175 , H05K2201/0179 , H05K2201/09763
摘要： According to a flexible thin film capacitor of the present invention, an adhesive film is formed on a substrate composed of at least one selected from the group consisting of an organic polymer and a metal foil, and an inorganic high dielectric film and metal electrode films are formed thereon. A metal oxide adhesive film can be used as the adhesive film. The adhesive film is formed in contact with the inorganic high dielectric film and at least one of the metal electrode films.
摘要翻译： 根据本发明的柔性薄膜电容器，在由选自有机聚合物和金属箔中的至少一种构成的基板上形成粘合膜，并且无机高介电膜和金属电极膜是 形成在其上。 可以使用金属氧化物粘合膜作为粘合膜。 该粘合膜形成为与无机高介电膜和至少一个金属电极膜接触。
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公开(公告)号：US06255201B1
公开(公告)日：2001-07-03
申请号：US09341464
申请日：1999-07-12
IPC分类号： H01L2142
CPC分类号： H01L29/6606 , H01L21/046 , H01L29/1608 , H01L29/861 , Y10T29/41
摘要： An impurity doped SiC substrate 1 and SiC thin film 2 are irradiated with a laser light 5 having a wavelength longer than such a wavelength that a band edge absorption of a semiconductor is caused. The wavelength of the laser light 5 may be such a wavelength that an absorption is caused by a vibration by the bond of an impurity element and an element constituting the semiconductor, for example, a wavelength of 9 &mgr;m to 11 &mgr;m. Specifically, in the case where Al is doped in SiC, the wavelength of the laser light 5 may be within the range of 9.5 &mgr;m to 10 &mgr;m.
摘要翻译： 用波长比发生半导体的带边缘吸收的波长的波长的激光5照射杂质掺杂的SiC衬底1和SiC薄膜2。 激光5的波长可以是由杂质元素和构成半导体的元素的键合引起的吸收引起的波长，例如9μm〜11μm的波长。 具体地，在Al中掺杂有Al的情况下，激光5的波长可以在9.5μm〜10μm的范围内。
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公开(公告)号：US6123774A
公开(公告)日：2000-09-26
申请号：US867487
申请日：1997-06-02
IPC分类号： H01L21/00 , H01L21/205 , H01L21/223 , H01L21/265 , H01L21/28 , H01L21/336 , H01J37/00
CPC分类号： H01L21/2236 , H01L21/67213 , H01L29/66765
摘要： A large area semiconductor element can be manufactured with high productivity, which has low electric resistance at the boundary face of a metal and a semiconductor and has excellent characteristics and reliability. A manufacturing apparatus comprises an ion irradiation means for simultaneously irradiating hydrogen ions and ions containing an element serving as a dopant of a semiconductor to a semiconductor film or a substrate in an atmosphere under reduced pressure, and a film forming means which forms a thin film or a heat treatment means which conducts a heat treatment without exposing a sample to an air. When a sample having an a-Si:H thin film is brought into a sample preparation chamber by opening a gate valve, the chamber is exhausted to have the inside pressure of 10.sup.2 to 10.sup.-3 Pa. Then, the sample is forwarded to an ion irradiation chamber from the sample preparation chamber via an intermediate chamber of which the pressure is maintained in the range of 10.sup.-3 to 10.sup.-7 Pa, and ions such as phosphous are irradiated. After the ion irradiation, a gate valve is opened to transfer the sample to the intermediate chamber, and then a gate valve is opened to forward the sample to a deposition chamber. Subsequently, Ar gas is let in to the deposition chamber and a metal film of Al/Ti is deposited by a sputtering method. After the deposition, the sample is forwarded to a sample carry-out chamber via the intermediate chamber.
摘要翻译： 可以以高生产率制造大面积半导体元件，其在金属和半导体的边界面处具有低电阻并且具有优异的特性和可靠性。 一种制造装置包括：离子照射装置，用于在减压下的气氛中同时向半导体膜或基板中含有含有半导体的掺杂剂的氢离子和离子的离子和离子;以及成膜装置，其形成薄膜或 进行热处理而不将样品暴露于空气的热处理装置。 当通过打开闸阀将具有a-Si：H薄膜的样品送入样品制备室时，将室排出至内部压力为102至10 -3 Pa，然后将样品送至 离子照射室从样品制备室经过其中压力保持在10 -3至10 -7 Pa的范围的中间室，并且照射诸如磷的离子。 在离子照射之后，打开闸阀以将样品转移到中间室，然后打开闸阀以将样品转移到沉积室。 随后，将Ar气体进入沉积室，通过溅射法沉积Al / Ti的金属膜。 沉积后，样品通过中间室送到样品进样室。
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公开(公告)号：US5976919A
公开(公告)日：1999-11-02
申请号：US905052
申请日：1997-08-01
IPC分类号： H01L21/00 , H01L21/223 , H01L21/336 , H01L21/265 , H01L21/786
CPC分类号： H01L21/67213 , H01L21/2236 , H01L29/66765
摘要： A large area semiconductor element can be manufactured with high productivity, which has low electric resistance at the boundary face of a metal and a semiconductor and has excellent characteristics and reliability. A manufacturing apparatus comprises an ion irradiation means for simultaneously irradiating hydrogen ions and ions containing an element serving as a dopant of a semiconductor to a semiconductor film or a substrate in an atmosphere under reduced pressure, and a film forming means which forms a thin film or a heat treatment means which conducts a heat treatment without exposing a sample to an air. When a sample having an a-Si:H thin film is brought into a sample preparation chamber by opening a gate valve, the chamber is exhausted to have the inside pressure of 10.sup.2 to 10.sup.-3 Pa. Then, the sample is forwarded to an ion irradiation chamber from the sample preparation chamber via an intermediate chamber of which the pressure is maintained in the range of 10.sup.-3 to 10.sup.-7 Pa, and ions such as phosphous are irradiated. After the ion irradiation, a gate valve is opened to transfer the sample to the intermediate chamber, and then a gate valve is opened to forward the sample to a deposition chamber. Subsequently, Ar gas is let in to the deposition chamber and a metal film of Al/Ti is deposited by a sputtering method. After the deposition, the sample is forwarded to a sample carry-out chamber via the intermediate chamber.
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公开(公告)号：US5514398A
公开(公告)日：1996-05-07
申请号：US244661
申请日：1994-06-06
摘要： An additive for cholesterol-containing food, containing a rice bran component and/or a derivative thereof as an active ingredient, a method of using same, and food treated thereby; and a process for producing mayonnaise controlled in the rise of a blood cholesterol level, or the absorption of cholesterol. A method of decreasing the effect of cholesterol contained in food on a living organism, for example, controlling the rise of a blood cholesterol level by adding to cholesterol-containing food a food additive capable of forming a complex with cholesterol, such as an extract of a rice bran component, .gamma.-orizanol (.gamma.-OZ) which is a mixture of esters of ferulic acid with various alcohols prepared by refining said extract and/or a derivative of a rice bran component, thereby forming a cholesterol complex of the food additive, whereby the cholesterol contained in food becomes nonabsorbable by a living organism or can be removed therefrom.
摘要翻译： PCT No.PCT / JP92 / 01299 Sec。 371日期：1994年6月6日 102（e）日期1994年6月6日PCT提交1992年10月6日PCT公布。 公开号WO94 / 07378 日期：1994年4月14日。含有米糠组分和/或其衍生物作为活性成分的含胆固醇食品的添加剂，使用方法和由此处理的食品; 以及在血液胆固醇水平升高或胆固醇吸收时控制的蛋黄酱生产过程。 降低食品中含有的胆固醇对生物体的影响的方法，例如通过向含胆固醇的食物中添加能够与胆固醇形成复合物的食品添加剂来控制血液胆固醇水平的升高，例如提取物 米糠组分，γ-蓖麻醇（γ-OZ），其是通过精制所述提取物和/或米糠组分的衍生物制备的阿魏酸与各种醇的混合物，从而形成食品添加剂的胆固醇复合物 ，由此食物中所含的胆固醇不能被活生物体吸收，或可从其中除去。
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公开(公告)号：US5470398A
公开(公告)日：1995-11-28
申请号：US763674
申请日：1991-09-23
IPC分类号： C23C16/40 , H01L21/02 , H01L21/312
CPC分类号： H01L28/40 , C23C16/401
摘要： A dielectric film is provided which may be used as an insulating layer of a capacitor of a semiconductor DRAM. The dielectric film is comprised of three elements, namely, titanium, silicon and oxygen. The dielectric film has a high dielectric constant and a small leakage current. The film is manufactured from the raw materials of titanium chloride and silicon hydride, and at least one of O.sub.2, N.sub.2 O, and a mixture of O.sub.2 and N.sub.2 O by plasma-decomposing the raw materials with the application of a strong electric field.
摘要翻译： 提供了可以用作半导体DRAM的电容器的绝缘层的电介质膜。 电介质膜由三种元素组成，即钛，硅和氧。 电介质膜具有高的介电常数和较小的漏电流。 该薄膜由氯化钛和氢化硅的原料以及O 2，N 2 O以及O 2和N 2 O的混合物中的至少一种制成，通过施加强电场等离子体分解原料。
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50.发明授权Mass spectrometer for analyzing ultra trace element using plasma ion source 失效用于使用等离子体离子源分析超微量元素的质谱仪
公开(公告)号：US5185523A
公开(公告)日：1993-02-09
申请号：US848932
申请日：1992-03-10
CPC分类号： H01J49/105
摘要： A mass spectrometer for analyzing ultra trace element using plasma ion source comprising, a plasma generating means for ionizing sampling gas by generating plasma, a vaccum chamber for taking in ions of the sampling gas from a hole of the vacuum chamber, an ion lens and a mass analyzing portion, and an ion detector for detecting the ions which are passed through the ion lens and the mass analyzing portion, wherein further comprising, a moving mechanism for moving said plasma generating means according to a vacuum degree measured in the vacuum chamber so as to make the sensitivity of the mass spectrometer higher.
摘要翻译： 一种用于使用等离子体离子源分析超微量元素的质谱仪，包括：用于通过产生等离子体对取样气体进行离子化的等离子体产生装置，用于从真空室的孔中吸取取样气体的离子的真空室，离子透镜和 质量分析部分和用于检测通过离子透镜和质量分析部分的离子的离子检测器，其中还包括用于根据在真空室中测量的真空度来移动所述等离子体产生装置的移动机构，以便 使质谱仪的灵敏度更高。
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