公开(公告)号：US20090084759A1

公开(公告)日：2009-04-02

申请号：US11864461

申请日：2007-09-28

Applicant: Ruairidh MacCRIMMON ,  Nicolaus J. Hofmeester ,  Steven P. Caliendo

Inventor： Ruairidh MacCRIMMON ,  Nicolaus J. Hofmeester ,  Steven P. Caliendo

IPC: C23F1/00

CPC classification number: H01J37/3023 ,  H01J37/304 ,  H01J37/3053 ,  H01J2237/0451 ,  H01J2237/0455 ,  H01J2237/0458 ,  H01J2237/0812 ,  H01J2237/20228 ,  H01J2237/2485 ,  H01J2237/30461 ,  H01J2237/30477 ,  H01J2237/30488

Abstract: A method and system of location specific processing on a substrate is described. The method comprises acquiring metrology data for a substrate, and computing correction data for adjusting a first region of the metrology data on the substrate. Thereafter, a first gas cluster ion beam (GCIB) for treating the high gradient regions is established, and the first GCIB is applied to the substrate according to the correction data. The method further comprises optionally acquiring second metrology data following the applying of the first GCIB, and computing second correction data for adjusting a second region of the metrology data, or the second metrology data, or both on the substrate. Thereafter, a second gas cluster ion beam (GCIB) for treating the second region is established, and the second GCIB is applied to the substrate according to the second correction data.

Abstract translation: 描述了在衬底上的位置特定处理的方法和系统。 该方法包括获取衬底的度量数据，以及计算用于调整衬底上度量数据的第一区域的校正数据。 此后，建立了用于处理高梯度区域的第一气体簇离子束（GCIB），并且根据校正数据将第一GCIB施加到衬底。 该方法还包括可选地在应用第一GCIB之后获取第二计量数据，以及计算第二校正数据，用于调整测量数据的第二区域或第二测量数据，或二者在衬底上。 此后，建立了用于处理第二区域的第二气体簇离子束（GCIB），并且根据第二校正数据将第二GCIB施加到衬底。

公开(公告)号：US07396745B2

公开(公告)日：2008-07-08

申请号：US11080800

申请日：2005-03-11

Applicant: John O. Borland ,  John J. Hautala ,  Wesley J. Skinner

Inventor： John O. Borland ,  John J. Hautala ,  Wesley J. Skinner

IPC: H01L21/425

CPC classification number: H01L21/223 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/0812 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/26566 ,  H01L21/324

Abstract: Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams.

Abstract translation: 使用气体簇离子束在半导体衬底中形成一个或多个掺杂区域和由此形成的半导体结的方法。

公开(公告)号：US10256095B2

公开(公告)日：2019-04-09

申请号：US15266639

申请日：2016-09-15

Applicant: TEL Epion Inc.

Inventor： Soo Doo Chae ,  Noel Russell ,  Joshua LaRose ,  Nicholas Joy ,  Luis Fernandez ,  Allen J. Leith ,  Steven P. Caliendo ,  Yan Shao ,  Vincent Lagana-Gizzo

IPC: H01L21/02 ,  H01L21/66 ,  G05B19/406 ,  H01L21/265 ,  H01L21/263 ,  H01J37/304

Abstract: A system and method for performing location specific processing of a workpiece is described. The method includes placing a microelectronic workpiece in a beam processing system, selecting a beam scan size for a beam scan pattern that is smaller than a dimension of the microelectronic workpiece, generating a processing beam, and processing a target region of the microelectronic workpiece by irradiating the processing beam along the beam scan pattern onto the target region within the beam scan size selected for processing the microelectronic workpiece.

公开(公告)号：US09735019B2

公开(公告)日：2017-08-15

申请号：US14842416

申请日：2015-09-01

Applicant: TEL Epion Inc.

Inventor： Michael Graf ,  Noel Russell ,  Matthew C. Gwinn ,  Allen J. Leith

IPC: H01L21/3065 ,  H01L27/02 ,  H01J37/305 ,  H01L21/311 ,  H01J27/02 ,  H01L21/3213 ,  H01J37/317

CPC classification number: H01L21/3065 ,  H01J27/026 ,  H01J37/317 ,  H01J2237/006 ,  H01J2237/0812 ,  H01J2237/16 ,  H01J2237/31732 ,  H01J2237/3174 ,  H01L21/31116 ,  H01L21/32136

Abstract: A beam processing system and method of operating are described. In particular, the beam processing system includes a beam source having a nozzle assembly that is configured to introduce a primary gas through the nozzle assembly to a vacuum vessel in order to produce a gaseous beam, such as a gas cluster beam, and optionally, an ionizer positioned downstream from the nozzle assembly, and configured to ionize the gaseous beam to produce an ionized gaseous beam. The beam processing system further includes a process chamber within which a substrate is positioned for treatment by the gaseous beam, and a secondary gas source, wherein the secondary gas source includes a secondary gas supply system that delivers a secondary gas, and a secondary gas controller that operatively controls the flow of the secondary gas injected into the beam processing system downstream of the nozzle assembly.

公开(公告)号：US20140123457A1

公开(公告)日：2014-05-08

申请号：US14151151

申请日：2014-01-09

Applicant: TEL Epion Inc.

Inventor： Robert K. Becker ,  Avrum Freytsis

IPC: H01J37/30

CPC classification number: H01J37/3002 ,  G21K2201/00 ,  H01J37/08 ,  H01J37/30 ,  H01J2237/006 ,  H01J2237/061 ,  H01J2237/0812 ,  Y10T29/49769 ,  Y10T29/49826

Abstract: A method of assembling a nozzle/skimmer module includes coupling a nozzle assembly and skimmer cartridge assembly in a rigid tandem configuration to more accurately control the formation of the Gas Cluster Ion Beam (GCIB). The nozzle/skimmer module is pre-aligned before installation in a production GCIB processing system to more accurately position the GCIB.

Abstract translation: 组装喷嘴/撇渣器模块的方法包括以刚性串联构造联接喷嘴组件和撇渣器组件以更准确地控制气体簇离子束（GCIB）的形成。 喷嘴/撇渣器模块在安装到生产GCIB处理系统之前进行预对准，以更准确地定位GCIB。

公开(公告)号：US08709944B2

公开(公告)日：2014-04-29

申请号：US13888981

申请日：2013-05-07

Applicant: TEL Epion Inc.

Inventor： Noel Russell ,  John J. Hautala ,  John Gumpher

IPC: H01L21/20

CPC classification number: H01L21/28506 ,  C23C14/02 ,  C23C14/024 ,  C23C14/16 ,  C23C14/5833 ,  H01J37/08 ,  H01J37/317 ,  H01J2237/0812 ,  H01J2237/3165 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/3205

Abstract: A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region.

公开(公告)号：US20130330924A1

公开(公告)日：2013-12-12

申请号：US13492094

申请日：2012-06-08

Applicant: Christopher OLSEN ,  Luis FERNANDEZ

Inventor： Christopher OLSEN ,  Luis FERNANDEZ

IPC: H01L21/768

CPC classification number: H01L21/76831 ,  H01J37/304 ,  H01J2237/0812 ,  H01J2237/3174 ,  H01L21/31116 ,  H01L21/32137 ,  H01L22/12 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for opening a conformal layer at the bottom of a contact via on a substrate is described. The method includes providing a substrate having a first layer with a via pattern formed therein and a second layer conformally deposited on the first layer and within the via pattern to establish a contact via pattern characterized by an initial mid-critical dimension (CD). The method further includes etching through the second layer at the bottom of the contact via pattern to extend the contact via pattern through the second layer and form a contact via while retaining at least part of the second layer on the top surface of the first layer, the corner at the entrance to the via pattern, and the sidewalls of the via pattern, wherein the etching is performed by irradiating the substrate with a gas cluster ion beam (GCIB) according to a GCIB etching process.

Abstract translation: 描述了在基板上的接触通孔的底部打开保形层的方法。 该方法包括提供具有其中形成有通孔图案的第一层的第一层和保形地沉积在第一层上和通孔图案内的第二层，以建立以初始中间临界尺寸（CD）为特征的接触通孔图案。 该方法还包括蚀刻穿过接触通孔图案底部的第二层，以通过图案延伸穿过第二层并且形成接触通孔，同时将第二层的至少一部分保留在第一层的顶表面上， 通孔图案的入口处的拐角和通孔图案的侧壁，其中通过根据GCIB蚀刻工艺用气体簇离子束（GCIB）照射衬底来进行蚀刻。

公开(公告)号：US20130196509A1

公开(公告)日：2013-08-01

申请号：US13826600

申请日：2013-03-14

Applicant: TEL Epion Inc.

Inventor： Martin D. Tabat ,  Christopher K. Olsen ,  Yan Shao ,  Ruairidh MacCrimmon ,  Luis Fernandez

IPC: H01L21/3065

CPC classification number: H01L21/306 ,  C23F4/00 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137

Abstract: A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics. Furthermore, the GCIB etch processing utilizes Si-containing and/or Ge-containing etchants. Further yet, the GCIB etch processing facilitates etching Si-containing material, Ge-containing material, and metal-containing material.

Abstract translation: 描述了用于进行各种材料的气体簇离子束（GCIB）蚀刻处理的方法和系统。 特别地，GCIB蚀刻处理包括设置用于GCIB的GCIB工艺条件的一个或多个GCIB特性以实现一个或多个目标蚀刻工艺度量。 此外，GCIB蚀刻处理利用含Si和/或Ge的蚀刻剂。 此外，GCIB蚀刻处理有助于蚀刻含Si材料，含Ge材料和含金属材料。

公开(公告)号：US08455060B2

公开(公告)日：2013-06-04

申请号：US12389010

申请日：2009-02-19

Applicant: Martin D. Tabat

Inventor： Martin D. Tabat

IPC: C23C14/28 ,  H05B6/00 ,  C23C16/00

CPC classification number: C23C16/26 ,  C23C16/513

Abstract: A method for depositing a hydrogenated diamond-like carbon (H-DLC) film on a surface of a substrate. The method includes maintaining a reduced-pressure environment around a substrate holder for holding a substrate, holding the substrate securely within the reduced-pressure environment, and forming a gas cluster ion beam (GCIB) from a pressurized gas containing hydrocarbon gas and a carrier gas. The method further includes accelerating the GCIB to the reduced-pressure environment, irradiating the accelerated GCIB onto at least a portion of the surface of the substrate, and forming an H-DLC film on the surface.

Abstract translation: 一种在基材表面上沉积氢化金刚石碳（H-DLC）膜的方法。 该方法包括保持基板保持器周围的减压环境，用于保持基板，将基板牢固地保持在减压环境内，以及从含有烃气体和载气的加压气体形成气体簇离子束（GCIB） 。 该方法还包括将GCIB加速至减压环境，将加速的GCIB照射到基材表面的至少一部分上，并在表面上形成H-DLC膜。

公开(公告)号：US08298432B2

公开(公告)日：2012-10-30

申请号：US11864489

申请日：2007-09-28

Applicant: Ruairidh MacCrimmon ,  Nicolaus J. Hofmeester ,  Steven P. Caliendo

Inventor： Ruairidh MacCrimmon ,  Nicolaus J. Hofmeester ,  Steven P. Caliendo

IPC: G01L21/30

CPC classification number: C23C14/545 ,  C23C14/221 ,  C23C16/513 ,  C23C16/52 ,  H01J37/09 ,  H01J37/304 ,  H01J37/3056 ,  H01J2237/0453 ,  H01J2237/0455 ,  H01J2237/0812

Abstract: A method and system of location specific processing on a substrate is described. The method comprises establishing a gas cluster ion beam (GCIB) according to a set of beam properties and measuring metrology data for a substrate. Thereafter, the method comprises determining at least one spatial gradient of the metrology data at one or more locations on the substrate and adjusting at least one beam property in the set of beam properties for the GCIB according to the determined at least one spatial gradient. Using the metrology data and the adjusted set of beam properties, correction data for the substrate is computed. Following the computing, the adjusted GCIB is applied to the substrate according to the correction data.

Abstract translation: 描述了在衬底上的位置特定处理的方法和系统。 该方法包括根据一组光束特性建立气体簇离子束（GCIB），并测量衬底的测量数据。 此后，该方法包括在衬底上的一个或多个位置处确定测量数据的至少一个空间梯度，并根据确定的至少一个空间梯度调整GCIB的一组光束属性中的至少一个光束特性。 使用测量数据和调整的束特性组合，计算衬底的校正数据。 在计算之后，根据校正数据将调整后的GCIB应用于衬底。