公开(公告)号：US07435355B2

公开(公告)日：2008-10-14

申请号：US11242866

申请日：2005-10-05

Applicant: Wei-Chin Lin ,  Hui-Ling Chang ,  Ching-Hsiang Tsai ,  Chao-Chiun Liang ,  Gen-Wen Hsieh ,  Yuh-Wen Lee

Inventor： Wei-Chin Lin ,  Hui-Ling Chang ,  Ching-Hsiang Tsai ,  Chao-Chiun Liang ,  Gen-Wen Hsieh ,  Yuh-Wen Lee

IPC: B44C1/22 ,  H01L21/302

CPC classification number: H01L21/02052 ,  B81B2201/12 ,  B81C1/00626 ,  B81C2201/0142 ,  G01Q60/38

Abstract: A liquid-based gravity-driven etching-stop technique for controlling structure dimension is provided, where opposite etching trenches in cooperation with an etching-stop solution are used for controlling the dimension of a microstructure on the wafer level. In an embodiment, opposite trenches surrounding the microstructure are respectively etched on sides of the wafer, and the trench depth on the side of the wafer, on which the microstructure is, is equal to the design dimension of the microstructure. Contrarily, it is unnecessary to define the trench depth on the back-side of the chip. In the final step of the fabrication process, when the device is etched, such that the trenches on the sides communicate with each other to separate the microstructure from the whole wafer automatically and thereby shift from the etchant into the etching-stop solution to stop etching.

Abstract translation: 提供了一种用于控制结构尺寸的液体重力驱动蚀刻停止技术，其中与蚀刻停止溶液配合的相反蚀刻沟槽用于控制晶片级上的微结构的尺寸。 在一个实施例中，围绕微结构的相对的沟槽分别蚀刻在晶片的侧面上，并且在其上的晶片侧面上的沟槽深度等于微结构的设计尺寸。 相反，不需要在芯片的背面限定沟槽深度。 在制造过程的最后步骤中，当器件被蚀刻时，使得侧面上的沟槽彼此连通以自动地将微结构与全部晶片分离，从而从蚀刻剂移动到蚀刻停止溶液中以停止蚀刻 。

公开(公告)号：US20080203295A1

公开(公告)日：2008-08-28

申请号：US11678681

申请日：2007-02-26

Applicant: Byong-Chon Park ,  Ki-Young Jung ,  Sang-Jung Ahn ,  Dal-Hyun Kim ,  Jinho Choi ,  Jae-Wan Hong

Inventor： Byong-Chon Park ,  Ki-Young Jung ,  Sang-Jung Ahn ,  Dal-Hyun Kim ,  Jinho Choi ,  Jae-Wan Hong

IPC: G01N23/00

CPC classification number: B81C1/00634 ,  B81B2201/12

Abstract: The present invention relates to a deformation method of nanometer-scale material using a particle beam and a nano-tool thereby. The deformation method of the nanometer-scale material using the particle beam according to the present invention is characterized in that the nanometer-scale material is bent toward a direction of the particle beam by irradiating the particle beam on the nanometer-scale material.

Abstract translation: 本发明涉及使用粒子束和纳米工具的纳米级材料的变形方法。 根据本发明的使用粒子束的纳米级材料的变形方法的特征在于，通过在纳米级材料上照射粒子束，使纳米级材料朝向粒子束的方向弯曲。

公开(公告)号：US20080164576A1

公开(公告)日：2008-07-10

申请号：US11958945

申请日：2007-12-18

Applicant: Giuseppe Barillaro ,  Alessandro Diligenti ,  Caterina Riva ,  Roberto Campedelli ,  Stefano Losa

Inventor： Giuseppe Barillaro ,  Alessandro Diligenti ,  Caterina Riva ,  Roberto Campedelli ,  Stefano Losa

IPC: H01L21/04 ,  H01L29/06

CPC classification number: B81C1/00539 ,  B81B2201/038 ,  B81B2201/07 ,  B81B2201/12 ,  B81B2203/0118 ,  B81B2203/019 ,  B81C1/00595 ,  B81C2201/0136 ,  B81C2203/0714 ,  H01L27/10

Abstract: A process for manufacturing an interaction system of a microelectromechanical type for a storage medium, the interaction system provided with a supporting element and an interaction element carried by the supporting element, envisages the steps of: providing a wafer of semiconductor material having a substrate with a first type of conductivity (P) and a top surface; forming a first interaction region having a second type of conductivity (N), opposite to the first type of conductivity (P), in a surface portion of the substrate in the proximity of the top surface; and carrying out an electrochemical etch of the substrate starting from the top surface, the etching being selective with respect to the second type of conductivity (N), so as to remove the surface portion of the substrate and separate the first interaction region from the substrate, thus forming the supporting element.

Abstract translation: 一种用于制造用于存储介质的微机电类型的相互作用系统的方法，具有支撑元件的相互作用系统和由支撑元件承载的相互作用元件，其设想是提供具有基板的半导体材料晶片，其具有 第一类电导率（P）和顶面; 在所述顶表面附近的所述衬底的表面部分中形成具有与所述第一类型的导电性（P）相反的第二导电类型（N）的第一相互作用区域; 并且从顶表面开始进行基板的电化学蚀刻，所述蚀刻相对于所述第二导电类型（N）是选择性的，以便移除所述基板的表面部分并将所述第一相互作用区域与所述基板分离 ，从而形成支撑元件。

公开(公告)号：US20070068995A1

公开(公告)日：2007-03-29

申请号：US11531541

申请日：2006-09-13

Applicant: Victor Kley

Inventor： Victor Kley

IPC: A47J36/02

CPC classification number: G01Q70/16 ,  B81B2201/12 ,  B81B2203/0361 ,  B81C3/008 ,  B81C99/002 ,  G01Q70/14 ,  Y10T29/49901

Abstract: Techniques for affixing a micro-object to a mounting structure at a desired relative orientation. A shaped portion of a work piece is caused to become embedded in two or more reference structures at stages during fabrication. The micro-object may have dimensions less than 200 microns, and possibly on the order of 15-25 microns. The mounting structure may be formed with a blind recess or a through aperture in which the micro-object is mounted.

Abstract translation: 用于将微物体以期望的相对定向固定到安装结构的技术。 工件的成形部分在制造过程中被分段成嵌入两个或更多个参考结构。 微型物体的尺寸可以小于200微米，并且可能在15-25微米左右。 安装结构可以形成有盲孔或安装微型物体的通孔。

公开(公告)号：US20030189351A1

公开(公告)日：2003-10-09

申请号：US10406845

申请日：2003-04-04

Applicant: Yoshikazu Nakayama ,  Daiken Chemical Co., Ltd.

Inventor： Yoshikazu Nakayama ,  Seiji Akita ,  Akio Harada ,  Takashi Okawa

IPC: B25J007/00

CPC classification number: B25J7/00 ,  B81B2201/032 ,  B81B2201/12 ,  B81B2203/0118 ,  B81C99/002 ,  B82B3/00 ,  G01Q80/00 ,  Y10S977/732 ,  Y10S977/734 ,  Y10S977/742 ,  Y10S977/778 ,  Y10S977/78 ,  Y10S977/837 ,  Y10S977/842 ,  Y10S977/858 ,  Y10S977/863 ,  Y10S977/875 ,  Y10S977/876 ,  Y10S977/89 ,  Y10S977/901 ,  Y10S977/962

Abstract: To provide nanotweezers and a nanomanipulator which allow great miniaturization of the component and are capable of gripping various types of nano-substances such as insulators, semiconductors and conductors and of gripping nano-substances of various shapes. Electrostatic nanotweezers 2 are characterized in that the nanotweezers 2 are comprised of a plurality of nanotubes whose base end portions are fastened to a holder 6 so that the nanotubes protrude from the holder 6, coating films which insulate and cover the surfaces of the nanotubes, and lead wires 10, 10 which are connected to two of the nanotubes 8, 9; and the tip ends of the two nanotubes are freely opened and closed by means of an electrostatic attractive force generated by applying a voltage across these lead wires. Furthermore, by way of forming a piezo-electric film 32 on the surface of the nanotube 9, and the tip ends of the nanotubes are freely opened and closed by expanding and contracting the piezo-electric film, thus allowing any desired nano-substances to be handled regardless of whether the nano-substances are insulators, semiconductors or conductors. Furthermore, if by way of designing three nanotubes so as to be freely opened and closed by an electrostatic system, nano-substances of various shapes such as spherical, rod-form, etc. can be handled. Moreover, a nanomanipulator that is constructed by combining the nanotweezers with a three-dimensional driving mechanism facilitates the gripping, moving and releasing of nano-substances

Abstract translation: 提供纳米管和纳米管操纵器，其允许部件的极小化，并且能够夹持各种类型的纳米物质，例如绝缘体，半导体和导体，并且夹持各种形状的纳米物质。 静电纳米针筒2的特征在于，纳米针筒2由多个纳米管组成，其基端部固定在保持器6上，使得纳米管从支架6突出，绝缘并覆盖纳米管表面的涂膜，以及 引线10,10连接到两个纳米管8,9; 并且通过在这些引线上施加电压而产生的静电吸引力自由地打开和闭合两个纳米管的末端。 此外，通过在纳米管9的表面上形成压电膜32，通过使压电膜膨胀收缩来使纳米管的前端自由地开闭，从而使任何所需的纳米物质 无论纳米物质是绝缘体，半导体还是导体，都要进行处理。 此外，如果通过设计三个纳米管以通过静电系统自由地打开和关闭，则可以处理诸如球形，棒状等各种形状的纳米物质。 此外，通过将纳米针管与三维驱动机构组合而构成的纳米机械手有利于纳米物质的夹持，移动和释放

公开(公告)号：US20030189350A1

公开(公告)日：2003-10-09

申请号：US10406844

申请日：2003-04-04

Applicant: Yoshikazu Nakayama ,  Daiken Chemical Co., Ltd.

Inventor： Yoshikazu Nakayama ,  Seiji Akita ,  Akio Harada ,  Takashi Okawa

IPC: B25J007/00

CPC classification number: B25J7/00 ,  B81B2201/032 ,  B81B2201/12 ,  B81B2203/0118 ,  B81C99/002 ,  B82B3/00 ,  G01Q80/00 ,  Y10S977/732 ,  Y10S977/734 ,  Y10S977/742 ,  Y10S977/778 ,  Y10S977/78 ,  Y10S977/837 ,  Y10S977/842 ,  Y10S977/858 ,  Y10S977/863 ,  Y10S977/875 ,  Y10S977/876 ,  Y10S977/89 ,  Y10S977/901 ,  Y10S977/962

Abstract: To provide nanotweezers and a nanomanipulator which allow great miniaturization of the component and are capable of gripping various types of nano-substances such as insulators, semiconductors and conductors and of gripping nano-substances of various shapes. Electrostatic nanotweezers 2 are characterized in that the nanotweezers 2 are comprised of a plurality of nanotubes whose base end portions are fastened to a holder 6 so that the nanotubes protrude from the holder 6, coating films which insulate and cover the surfaces of the nanotubes, and lead wires 10, 10 which are connected to two of the nanotubes 8, 9; and the tip ends of the two nanotubes are freely opened and closed by means of an electrostatic attractive force generated by applying a voltage across these lead wires. Furthermore, by way of forming a piezo-electric film 32 on the surface of the nanotube 9, and the tip ends of the nanotubes are freely opened and closed by expanding and contracting the piezo-electric film, thus allowing any desired nano-substances to be handled regardless of whether the nano-substances are insulators, semiconductors or conductors. Furthermore, if by way of designing three nanotubes so as to be freely opened and closed by an electrostatic system, nano-substances of various shapes such as spherical, rod-form, etc. can be handled. Moreover, a nanomanipulator that is constructed by combining the nanotweezers with a three-dimensional driving mechanism facilitates the gripping, moving and releasing of nano-substances

公开(公告)号：US5970315A

公开(公告)日：1999-10-19

申请号：US943663

申请日：1997-10-03

Applicant: L. Richard Carley ,  Michael L. Reed ,  Gary K. Fedder ,  Suresh Santhanam

Inventor： L. Richard Carley ,  Michael L. Reed ,  Gary K. Fedder ,  Suresh Santhanam

IPC: G01B21/30 ,  B62D57/00 ,  B81B3/00 ,  B81B5/00 ,  B81B7/02 ,  B81C3/00 ,  G01N13/10 ,  G01N37/00 ,  G11B5/00 ,  G11B9/00 ,  G11B9/14 ,  H02N1/00 ,  H01L21/44

CPC classification number: H02N1/006 ,  B81C1/0015 ,  B82Y10/00 ,  G11B9/14 ,  G11B9/1409 ,  G11B9/1418 ,  G11B9/1445 ,  B81B2201/07 ,  B81B2201/12 ,  B81B2203/0361 ,  B81C2201/0109 ,  B81C2201/0132 ,  G11B2005/0002 ,  Y10S977/861 ,  Y10S977/881 ,  Y10S977/888 ,  Y10S977/89

Abstract: The present invention is directed to a process for fabricating a microelectromechanical device from a substrate carrying at least one layer of a non-erodible material laid out to form at least a portion of the microelectromechanical device, at least one layer of an erodible material, and at least one sacrificial layer. The process includes the step of using the layer of non-erodible material as a mask and anistropically etching any of the layer of erodible material not occluded by the layer of non-erodible material. The process also includes the step of isotropically etching the sacrificial layer under at least a beam portion of the microelectromechanical device to free the beam portion of the microelectromechanical device from the substrate.

Abstract translation: 本发明涉及从承载至少一层不可侵蚀材料的基底制造微机电装置的方法，其布置成形成至少一部分微机电装置，至少一层可侵蚀材料，以及 至少一个牺牲层。 该方法包括使用不可侵蚀材料层作为掩模的步骤，并且非理想地蚀刻不被不可侵蚀材料层遮挡的可侵蚀材料层中的任何一层。 该方法还包括在微电子机械装置的至少梁部分下各向同性地蚀刻牺牲层的步骤，以将微机电装置的束部分从衬底释放。

公开(公告)号：US5393647A

公开(公告)日：1995-02-28

申请号：US92780

申请日：1993-07-16

Applicant: Armand P. Neukermans ,  Timothy G. Slater ,  Linda E. Whittlesey ,  Sean S. Cahill

Inventor： Armand P. Neukermans ,  Timothy G. Slater ,  Linda E. Whittlesey ,  Sean S. Cahill

IPC: G01Q70/10 ,  B81C1/00 ,  C23C16/00 ,  G01Q70/14 ,  G01Q70/16 ,  H01J9/02 ,  H01J37/073 ,  H01L21/302

CPC classification number: G01Q70/16 ,  B81C1/00682 ,  B82Y35/00 ,  G01Q70/14 ,  H01J9/025 ,  B81B2201/12 ,  H01J2209/0226

Abstract: Forming micro-probe tips for an atomic force microscope, a scanning tunneling microscope, a beam electron emission microscope, or for field emission, by first thinning a tip of a first material, such as silicon. The tips are then reacted with a second material, such as atoms from an organic or ammonia vapor, at a temperature of about 1000.degree. C..+-.200.degree. C. and vacuum conditions for several minutes. Vapors such as methane, propane or acetylene will be converted to SiC or WC while ammonia will be converted to Si.sub.3 N.sub.4. The converted material will have different physical, chemical and electrical properties. For example, a SiC tip will be superhard, approaching diamond in hardness. Electrically conductive tips are suitable for field emission.

Abstract translation: 通过首先使诸如硅的第一材料的尖端变薄，形成用于原子力显微镜，扫描隧道显微镜，束电子发射显微镜或用于场发射的微探针尖端。 然后将尖端与第二种材料（例如来自有机或氨蒸汽的原子）在约1000℃±200℃的温度和真空条件下反应数分钟。 蒸气如甲烷，丙烷或乙炔将转化为SiC或WC，而氨将转化为Si3N4。 转换的材料将具有不同的物理，化学和电学性能。 例如，SiC尖端将是超硬的，接近金刚石的硬度。 导电尖端适用于场发射。