公开(公告)号：US5447600A

公开(公告)日：1995-09-05

申请号：US216194

申请日：1994-03-21

Applicant: Douglas A. Webb

Inventor： Douglas A. Webb

IPC: B05D5/08 ,  B05D7/00 ,  B81B3/00 ,  G02B26/08 ,  B44C1/22 ,  B29C37/00 ,  C23F1/00

CPC classification number: B81B3/0005 ,  B05D5/083 ,  G02B26/0841 ,  B81C2201/112

Abstract: A method for reducing sticking between contacting elements in a micromechanical device is disclosed. In addition, a micromechanical device is disclosed wherein the elements of the device are less likely to stick. The method for reducing sticking in a micromechanical device (10) comprises forming a protective layer (26) on a first contact element (14) to reduce the likelihood of a first contacting element (14) sticking to another contacting element (20). The protective layer (26) may be formed of a fluoro-polymer such as Teflon-AF.

Abstract translation: 公开了一种用于减少微机械装置中的接触元件之间的粘附的方法。 此外，公开了一种微机械装置，其中装置的元件不太可能粘附。 用于减少在微机械装置（10）中粘附的方法包括在第一接触元件（14）上形成保护层（26）以减少第一接触元件（14）粘附到另一个接触元件（20）的可能性。 保护层（26）可以由氟聚合物如特氟龙-AF形成。

公开(公告)号：US5417111A

公开(公告)日：1995-05-23

申请号：US75043

申请日：1993-06-10

Applicant: Steven J. Sherman ,  Robert W. K. Tsang ,  Theresa A. Core ,  A. Paul Brokaw

Inventor： Steven J. Sherman ,  Robert W. K. Tsang ,  Theresa A. Core ,  A. Paul Brokaw

IPC: B81B3/00 ,  B81C99/00 ,  G01P15/08 ,  G01P15/125 ,  G01P15/13

CPC classification number: B81C1/00246 ,  B81B3/001 ,  B81C1/00214 ,  B81C1/0092 ,  B81C99/0035 ,  G01P15/0802 ,  G01P15/125 ,  G01P15/131 ,  B81C2201/112 ,  B81C2203/0735 ,  B81C2203/0742 ,  G01P2015/0814

Abstract: The invention is a monolithic sensor comprising a silicon substrate, a suspended polysilicon microstructure for sensing a condition disposed above and suspended from the substrate, and circuitry for resolving a signal based on said sensed condition, the circuitry including bipolar circuit elements and MOS circuit elements. One disclosed embodiment is particularly adapted for sensing acceleration by means of a differential capacitor arrangement in which one capacitor plate in the arrangement is moveable responsive to an acceleration.

Abstract translation: 本发明是一种单片传感器，其包括硅衬底，用于感测设置在衬底上方并悬挂在衬底上的状态的悬浮多晶硅微结构，以及用于基于所述检测到的状态分解信号的电路，所述电路包括双极电路元件和MOS电路元件。 一个公开的实施例特别适用于通过差分电容器布置感测加速度，其中该装置中的一个电容器板可响应于加速度而移动。

公开(公告)号：US20230278856A1

公开(公告)日：2023-09-07

申请号：US18315799

申请日：2023-05-11

Applicant: Taiwan Semiconductor manufacturing Co., Ltd.

Inventor： Yu-Chia Liu ,  Chia-Hua Chu ,  Chun-Wen Cheng

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0006 ,  B81C1/00246 ,  B81B7/0051 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2201/0257 ,  B81C2203/0714 ,  B81C2201/112 ,  B81C2201/0176 ,  B81C2201/0181 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2203/0735

Abstract: Representative methods for sealing MEMS devices include depositing insulating material over a substrate, forming conductive vias in a first set of layers of the insulating material, and forming metal structures in a second set of layers of the insulating material. The first and second sets of layers are interleaved in alternation. A dummy insulating layer is provided as an upper-most layer of the first set of layers. Portions of the first and second set of layers are etched to form void regions in the insulating material. A conductive pad is formed on and in a top surface of the insulating material. The void regions are sealed with an encapsulating structure. At least a portion of the encapsulating structure is laterally adjacent the dummy insulating layer, and above a top surface of the conductive pad. An etch is performed to remove at least a portion of the dummy insulating layer.

公开(公告)号：US20170305738A1

公开(公告)日：2017-10-26

申请号：US15138419

申请日：2016-04-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Hang Chang ,  I-Shi Wang ,  Jen-Hao Liu

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0005 ,  B81B3/001 ,  B81B2207/012 ,  B81C2201/112 ,  B81C2201/115

Abstract: A microelectromechanical systems (MEMS) package with roughness for high quality anti-stiction is provided. A device substrate is arranged over a support device. The device substrate comprises a movable element with a lower surface that is rough and that is arranged within a cavity. A dielectric layer is arranged between the support device and the device substrate. The dielectric layer laterally encloses the cavity. An anti-stiction layer lines the lower surface of the movable element. A method for manufacturing the MEMS package is also provided.

公开(公告)号：US20170073213A1

公开(公告)日：2017-03-16

申请号：US15345179

申请日：2016-11-07

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0005 ,  B81B3/001 ,  B81B2201/0257 ,  B81B2203/0136 ,  B81C1/0015 ,  B81C1/00968 ,  B81C2201/112

Abstract: A MEMS device and a method to manufacture a MEMS device are disclosed. An embodiment includes forming trenches in a first main surface of a substrate, forming conductive fingers by forming a conductive material in the trenches and forming an opening from a second main surface of the substrate thereby exposing the conductive fingers, the second main surface opposite the first main surface.

Abstract translation: 公开了MEMS器件和制造MEMS器件的方法。 一个实施例包括在衬底的第一主表面中形成沟槽，通过在沟槽中形成导电材料形成导电指状物并从衬底的第二主表面形成开口，从而暴露导电指状物，第二主表面与第一主表面相反 主表面。

公开(公告)号：US20170050841A1

公开(公告)日：2017-02-23

申请号：US14832264

申请日：2015-08-21

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： YEN-CHENG LIU ,  HSIN-TING HUANG ,  SHANG-YING TSAI ,  KUEI-SUNG CHANG

IPC: B81B7/00 ,  B81B3/00 ,  B81C1/00 ,  B81B7/02

CPC classification number: B81B7/007 ,  B81B3/0005 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2207/012 ,  B81B2207/092 ,  B81C1/00269 ,  B81C1/00293 ,  B81C2201/112 ,  B81C2203/0145 ,  B81C2203/0785 ,  B81C2203/0792

Abstract: A semiconductive structure includes a first substrate including a first surface and a second surface opposite to the first surface, a second substrate disposed over the first surface and including a first device and a second device, a first capping structure disposed over the second substrate, and including a via extending through the first capping structure to the second device, a first cavity surrounding the first device and defined by the first capping structure and the first substrate, a second cavity surrounding the second device and defined by the first capping structure and the first substrate, and a second capping structure disposed over the first capping structure and covering the via, wherein the second cavity and the via are sealed by the second capping structure.

Abstract translation: 半导体结构包括：第一衬底，包括第一表面和与第一表面相对的第二表面;第二衬底，设置在第一表面上并包括第一器件和第二器件;第一封盖结构，设置在第二衬底上;以及 包括延伸穿过所述第一封盖结构到所述第二器件的通孔，围绕所述第一器件并由所述第一封盖结构和所述第一衬底限定的第一腔，围绕所述第二器件并由所述第一封盖结构和所述第一封盖结构限定的第二腔 衬底和设置在第一封盖结构上并覆盖通孔的第二封盖结构，其中第二腔和通孔由第二封盖结构密封。

公开(公告)号：US09574263B2

公开(公告)日：2017-02-21

申请号：US14077911

申请日：2013-11-12

Applicant: University of North Texas

Inventor： Guido Fridolin Verbeck, IV ,  Stephen Davila

IPC: C23C14/22 ,  B82B3/00 ,  B82Y30/00 ,  B82Y40/00 ,  C23C14/28 ,  C23C14/54 ,  C23C14/04 ,  C23C14/12

CPC classification number: C23C14/221 ,  B81C2201/112 ,  B82B3/00 ,  B82Y30/00 ,  B82Y40/00 ,  C23C14/04 ,  C23C14/12 ,  C23C14/28 ,  C23C14/54

Abstract: A soft-landing (SL) instrument for depositing ions onto substrates using a laser ablation source is described herein. The instrument of the instant invention is designed with a custom drift tube and a split-ring ion optic for the isolation of selected ions. The drift tube allows for the separation and thermalization of ions formed after laser ablation through collisions with an inert bath gas that allow the ions to be landed at energies below 1 eV onto substrates. The split-ring ion optic is capable of directing ions toward the detector or a landing substrate for selected components. The inventors further performed atomic force microscopy (AFM) and drift tube measurements to characterize the performance characteristics of the instrument.

Abstract translation: 本文描述了使用激光烧蚀源将离子沉积到衬底上的软着陆（SL）仪器。 本发明的仪器设计有用于分离选定离子的定制漂移管和分离环离子光学器件。 漂移管允许通过与允许离子以低于1eV的能量降落到基底上的惰性浴气碰撞在激光烧蚀之后形成的离子的分离和热化。 分裂环离子光学器件能够将离子引向检测器或用于选定部件的着陆衬底。 本发明人进一步进行原子力显微镜（AFM）和漂移管测量以表征仪器的性能特征。

公开(公告)号：US09487386B2

公开(公告)日：2016-11-08

申请号：US13743306

申请日：2013-01-16

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0005 ,  B81B3/001 ,  B81B2201/0257 ,  B81B2203/0136 ,  B81C1/0015 ,  B81C1/00968 ,  B81C2201/112

Abstract: A MEMS device and a method to manufacture a MEMS device are disclosed. An embodiment includes forming trenches in a first main surface of a substrate, forming conductive fingers by forming a conductive material in the trenches and forming an opening from a second main surface of the substrate thereby exposing the conductive fingers, the second main surface opposite the first main surface.

Abstract translation: 公开了MEMS器件和制造MEMS器件的方法。 一个实施例包括在衬底的第一主表面中形成沟槽，通过在沟槽中形成导电材料形成导电指状物并从衬底的第二主表面形成开口，从而暴露导电指状物，第二主表面与第一主表面相反 主表面。

公开(公告)号：US09463973B2

公开(公告)日：2016-10-11

申请号：US14529824

申请日：2014-10-31

Applicant: Ruben B. Montez ,  Robert F. Steimle

Inventor： Ruben B. Montez ,  Robert F. Steimle

IPC: B81B3/00 ,  B81C1/00 ,  G01P15/08

CPC classification number: B81B3/0005 ,  B81B2201/0221 ,  B81B2201/0235 ,  B81B2203/0181 ,  B81B2203/06 ,  B81C1/0038 ,  B81C1/00952 ,  B81C2201/0169 ,  B81C2201/112 ,  G01P15/0802 ,  G01P2015/0871 ,  G01P2015/0874

Abstract: A mechanism for reducing stiction in a MEMS device by decreasing an amount of carbon from TEOS-based silicon oxide films that can accumulate on polysilicon surfaces during fabrication is provided. A carbon barrier material film is deposited between one or more polysilicon layer in a MEMS device and the TEOS-based silicon oxide layer. This barrier material blocks diffusion of carbon into the polysilicon, thereby reducing accumulation of carbon on the polysilicon surfaces. By reducing the accumulation of carbon, the opportunity for stiction due to the presence of the carbon is similarly reduced.

Abstract translation: 提供了一种用于通过减少在制造期间可能积聚在多晶硅表面上的基于TEOS的氧化硅膜的碳来减少MEMS器件中的静电的机制。 在MEMS器件中的一个或多个多晶硅层和基于TEOS的氧化硅层之间沉积碳阻挡材料膜。 该阻挡材料阻止碳扩散到多晶硅中，从而减少碳在多晶硅表面上的积累。 通过减少碳的积累，由于碳的存在而导致的静电机会同样地减少。

公开(公告)号：US20160060108A1

公开(公告)日：2016-03-03

申请号：US14844779

申请日：2015-09-03

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： William Robert MORRISON ,  Mark Christopher FISHER ,  Murali Hanabe ,  Ganapathy Subramaniam SIVAKUMAR ,  Simon Joshua JACOBS

IPC: B81C1/00

CPC classification number: B81C1/00984 ,  B81B3/0005 ,  B81B7/0032 ,  B81C1/00261 ,  B81C1/0096 ,  B81C2201/112 ,  H01L21/02112 ,  H04W4/02 ,  Y10S257/914

Abstract: A device has a microelectromechanical system (MEMS) component with at least one surface and a coating disposed on at least a portion of the surface. The coating has a compound of the formula M(CnF2n+1Or), wherein M is a polar head group and wherein n≧2r. The value of n may range from 2 to about 20, and the value of r may range from 1 to about 10. The value of n plus r may range from 3 to about 30, and a ratio of n:r may have a value of about 2:1 to about 20:1.

Abstract translation: 器件具有微机电系统（MEMS）部件，其中至少一个表面和涂层设置在表面的至少一部分上。 该涂层具有式M（CnF2n + 10r）的化合物，其中M是极性头基，其中n≥2r。 n的值可以在2至约20的范围内，并且r的值可以在1至约10的范围内.n加r的值可以在3至约30的范围内，并且n：r的比可以具有值 为约2：1至约20：1。