公开(公告)号：US5124522A

公开(公告)日：1992-06-23

申请号：US557444

申请日：1990-07-23

Applicant: Michael A. Booke ,  Michael H. W. Kallmeyer ,  Nabil A. Rizk ,  You-Wen Yau

Inventor： Michael A. Booke ,  Michael H. W. Kallmeyer ,  Nabil A. Rizk ,  You-Wen Yau

IPC: H01J37/302 ,  H01J37/31 ,  H05K3/00

CPC classification number: H01J37/31 ,  H01J37/3023 ,  H01J2237/30411 ,  H01J2237/317 ,  H05K3/0017

Abstract: A high precision system for machining substrates by means of an energy beam includes real time digital signal processor control and a deflection system providing control, within a predetermined field of the substrate, of the angle at which the beam machines the substrate. An electron beam is used in a vacuum chamber in a preferred embodiment. The system also includes an x-y table for positioning the substrate and may have provision for detecting the x-y position and angular misregistration of the substrate. Dynamic forms and stigmator control may be used to produce a uniform beam within the field. The system allows a high speed vector machining process, which optimizes the overall system throughput by minimizing the settling time of the deflection system.

Abstract translation: 用于通过能量束加工衬底的高精度系统包括实时数字信号处理器控制和偏转系统，该偏转系统在衬底的预定场域内提供光束加工衬底的角度的控制。 在优选实施例中，在真空室中使用电子束。 该系统还包括用于定位衬底的x-y工作台，并且可以具有用于检测衬底的x-y位置和角度对准的设置。 可以使用动态形式和姿态控制来在场内产生均匀的波束。 该系统允许高速矢量加工过程，其通过最小化偏转系统的建立时间来优化整个系统的吞吐量。

公开(公告)号：US20170243718A1

公开(公告)日：2017-08-24

申请号：US15427200

申请日：2017-02-08

Applicant: NuFlare Technology, Inc.

Inventor： Tomoo MOTOSUGI

IPC: H01J37/302 ,  H01J37/317

CPC classification number: H01J37/3023 ,  H01J37/3174 ,  H01J2237/30411

Abstract: In one embodiment, A charged particle beam drawing apparatus includes an irradiation amount resetting processing circuitry changing the irradiation amount in the shot data to the irradiation amount lower limit value when the irradiation amount defined in the shot data is less than the irradiation amount lower limit value, a shot size adjustment processing circuitry changing the shot size defined in the shot data, based on an amount of the change in the irradiation amount, a shot position adjustment processing circuitry changing the shot position defined in the shot data, based on an amount of the change in the shot size, and a drawing device drawing a pattern by irradiating the substrate with the charged particle beam, using the shot data in which the irradiation amount, the shot size, and the shot position have been changed.

公开(公告)号：US07417242B2

公开(公告)日：2008-08-26

申请号：US11390039

申请日：2006-03-27

Applicant: Andrew M. Ray

Inventor： Andrew M. Ray

IPC: G21F5/10 ,  H01J37/08

CPC classification number: H01J37/244 ,  H01J37/304 ,  H01J37/3045 ,  H01J37/3171 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/24542 ,  H01J2237/30405 ,  H01J2237/30411 ,  H01J2237/31701 ,  H01J2237/31703

Abstract: A system, apparatus, and method for determining position and two angles of incidence of an ion beam to a surface of a workpiece is provided. A measurement apparatus having an elongate first and second sensor is coupled to a translation mechanism, wherein the first sensor extends in a first direction perpendicular to the translation, and wherein the second sensor extends at an oblique angle to the first sensor. The first and second elongate sensors sense one or more characteristics of the ion beam as the first and second sensors pass through the ion beam at a respective first time and a second time, and a controller is operable to determine a position and first and second angle of incidence of the ion beam, based, at least in part, on the one or more characteristics of the ion beam sensed by the first sensor and second sensor at the first and second times.

Abstract translation: 提供了一种用于确定离子束到工件表面的位置和两个入射角的系统，装置和方法。 具有细长的第一和第二传感器的测量装置耦合到平移机构，其中第一传感器沿垂直于平移的第一方向延伸，并且其中第二传感器以与第一传感器成倾斜的角度延伸。 当第一和第二传感器在相应的第一时间和第二时间通过离子束时，第一和第二细长传感器感测离子束的一个或多个特性，并且控制器可操作以确定位置和第一和第二角度 至少部分地基于由第一传感器和第二传感器在第一次和第二次感测的离子束的一个或多个特性。

公开(公告)号：US07394078B2

公开(公告)日：2008-07-01

申请号：US11146072

申请日：2005-06-07

Applicant: Atul Gupta ,  Joseph C. Olson

Inventor： Atul Gupta ,  Joseph C. Olson

IPC: G21K5/10

CPC classification number: H01J37/3171 ,  H01J2237/2487 ,  H01J2237/30411 ,  H01J2237/30483 ,  H01J2237/31703 ,  H01J2237/31706 ,  H01L21/26586 ,  H01L29/66803

Abstract: A technique for ion beam angle spread control for advance applications is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam angle spread control for advanced applications. The method may comprise directing one or more ion beams at a substrate surface at two or more different incident angles. The method may also comprise varying an ion beam dose associated with at least one of the one or more ion beams based at least in part on the two or more incident angles, thereby exposing the substrate surface to a controlled ion beam angle-dose distribution.

Abstract translation: 公开了一种用于先进应用的离子束角度扩展控制技术。 在一个特定的示例性实施例中，该技术可以被实现为用于高级应用的离子束角度扩展控制的方法。 该方法可以包括在两个或更多个不同的入射角处在衬底表面处引导一个或多个离子束。 该方法还可以包括至少部分地基于两个或多个入射角度改变与至少一个离子束相关联的离子束剂量，从而将基底表面暴露于受控的离子束角度 - 剂量分布。

公开(公告)号：US07218985B2

公开(公告)日：2007-05-15

申请号：US11371677

申请日：2006-03-08

Applicant: Hidemitsu Naya ,  Koji Hashimoto ,  Masamichi Kawano ,  Rikio Tomiyoshi

Inventor： Hidemitsu Naya ,  Koji Hashimoto ,  Masamichi Kawano ,  Rikio Tomiyoshi

IPC: G06F19/00

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G05B19/41855 ,  G05B2219/31323 ,  G05B2219/45028 ,  H01J37/3023 ,  H01J37/3174 ,  H01J2237/30411 ,  H01J2237/3175 ,  H01J2237/31762 ,  Y02P90/185 ,  Y02P90/24

Abstract: A semiconductor manufacturing apparatus includes: a calculation unit having at least one computer for processing semiconductor design information; a control unit for controlling radiation of an electron in accordance with a processing result of the semiconductor design information; a writing unit for radiating an electron in accordance with instructions of the control unit; and at least one storage device. The semiconductor manufacturing apparatus permits a communication between the storage device, the calculation unit, the control unit, and the writing unit. The semiconductor manufacturing apparatus further includes a communication pass through which the storage device can be controlled.

Abstract translation: 半导体制造装置包括：计算单元，具有至少一个用于处理半导体设计信息的计算机; 控制单元，用于根据半导体设计信息的处理结果控制电子辐射; 用于根据控制单元的指令发射电子的写入单元; 和至少一个存储设备。 半导体制造装置允许存储装置，计算单元，控制单元和写入单元之间的通信。 半导体制造装置还包括可以控制存储装置的通信通路。

公开(公告)号：US20060208204A1

公开(公告)日：2006-09-21

申请号：US11146072

申请日：2005-06-07

Applicant: Atul Gupta ,  Joseph Olson

Inventor： Atul Gupta ,  Joseph Olson

IPC: H01J37/302 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J2237/2487 ,  H01J2237/30411 ,  H01J2237/30483 ,  H01J2237/31703 ,  H01J2237/31706 ,  H01L21/26586 ,  H01L29/66803

Abstract: A technique for ion beam angle spread control for advance applications is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam angle spread control for advanced applications. The method may comprise directing one or more ion beams at a substrate surface at two or more different incident angles. The method may also comprise varying an ion beam dose associated with at least one of the one or more ion beams based at least in part on the two or more incident angles, thereby exposing the substrate surface to a controlled ion beam angle-dose distribution.

Abstract translation: 公开了一种用于先进应用的离子束角度扩展控制技术。 在一个特定的示例性实施例中，该技术可以被实现为用于高级应用的离子束角度扩展控制的方法。 该方法可以包括在两个或更多个不同的入射角处在衬底表面处引导一个或多个离子束。 该方法还可以包括至少部分地基于两个或多个入射角度改变与至少一个离子束相关联的离子束剂量，从而将基底表面暴露于受控的离子束角度 - 剂量分布。

公开(公告)号：US07081633B2

公开(公告)日：2006-07-25

申请号：US11043113

申请日：2005-01-27

Applicant: Hirotaka Amakawa

Inventor： Hirotaka Amakawa

IPC: H01L21/00

CPC classification number: G06F17/5018 ,  G06F2217/10 ,  H01J2237/30411 ,  H01J2237/31701 ,  H01L21/26586

Abstract: An ion implantation simulator that computes an ion density distribution at high speed and with high accuracy based on a beam dispersion phenomenon in an ion implantation process. The ion implantation simulator is provided with the beam dispersion approximate function storage section 121, which stores a beam dispersion approximate function that is obtained through approximation of ion beam dispersion by using a predetermined function; a beam intensity computing section 131, which computes an area surface beam intensity that indicates an intensity of the ion beam on a surface of an implanted area by using the beam dispersion approximate function; and an ion density distribution computing section 132, which computes the density distribution of the ion, which is implanted by the ion beam into the device through the surface of the implanted area, by using the area surface beam intensity.

Abstract translation: 一种离子注入模拟器，其基于离子注入过程中的束散射现象以高速和高精度计算离子密度分布。 离子注入模拟器设置有光束色散近似函数存储部分121，其存储通过使用预定函数近似离子束色散获得的光束色散近似函数; 光束强度计算部分131，其通过使用光束散射近似函数计算指示植入区域的表面上的离子束的强度的面积表面光束强度; 以及离子密度分布计算部132，其通过使用面积面强度来计算离子束通过注入区域的表面被注入到器件中的离子的密度分布。

公开(公告)号：US20060113489A1

公开(公告)日：2006-06-01

申请号：US11000023

申请日：2004-11-30

Applicant: Andrew Ray ,  Michael Graf

Inventor： Andrew Ray ,  Michael Graf

IPC: H01J37/08

CPC classification number: H01L21/265 ,  H01J37/3023 ,  H01J37/3171 ,  H01J2237/20228 ,  H01J2237/20285 ,  H01J2237/30411

Abstract: A method for optimizing an ion implantation, wherein a substrate is scanned in two dimensions through an ion beam. The method provides a process recipe comprising one or more of a current of an ion beam, a dosage of ions, and a number of substrate passes through the beam in a slow scan direction. The beam is profiled based on the process recipe, and a size of the beam is determined. One of a plurality of differing scan speeds in a fast scan direction is selected, based on a desired uniformity of the implantation and the process recipe. The process recipe is controlled, based on one or more of the desired uniformity, a throughput time for the substrate, a desired minimum ion beam current, and one or more substrate conditions. One of a plurality of speeds in a slow scan direction is selected, based on the dosage of the implantation.

Abstract translation: 一种用于优化离子注入的方法，其中通过离子束在两维中扫描基底。 该方法提供了包括离子束的电流，离子的剂量和数量的衬底中的一种或多种在慢扫描方向上通过光束的工艺配方。 根据工艺配方对梁进行成型，确定梁的尺寸。 基于植入和工艺配方的期望均匀性，选择快速扫描方向上的多个不同扫描速度之一。 基于所需的均匀性，基底的生产时间，期望的最小离子束电流和一个或多个基底条件中的一个或多个来控制工艺配方。 基于植入的剂量来选择慢扫描方向上的多个速度之一。

公开(公告)号：US20060091325A1

公开(公告)日：2006-05-04

申请号：US11265934

申请日：2005-11-03

Applicant: Thomas Moore ,  Lyudmila Zaykova-Feldman

Inventor： Thomas Moore ,  Lyudmila Zaykova-Feldman

IPC: H01J37/08

CPC classification number: H01J37/302 ,  B82Y15/00 ,  G01N1/32 ,  H01J37/20 ,  H01J37/22 ,  H01J37/3056 ,  H01J2237/20 ,  H01J2237/202 ,  H01J2237/204 ,  H01J2237/206 ,  H01J2237/208 ,  H01J2237/2482 ,  H01J2237/28 ,  H01J2237/30411 ,  H01J2237/30472 ,  H01J2237/31745

Abstract: An apparatus for performing automated in-situ lift-out of a sample from a specimen includes a computer having a memory with computer-readable instructions, a stage for a specimen and a nano-manipulator. The stage and the nano-manipulator are controlled by motion controllers connected to the computer. The nano-manipulator has a probe tip for attachment to samples excised from the specimen. The computer-readable instructions include instructions to cause the stage motion controllers and the nano-manipulator motion controllers, as well as an ion-beam source, to automatically perform in-situ lift-out of a sample from the specimen.

Abstract translation: 用于从样本进行样品的自动原位提取的装置包括具有具有计算机可读指令的存储器的计算机，用于样本的台和纳米操纵器。 舞台和纳米操纵器由连接到计算机的运动控制器控制。 纳米操纵器具有用于附着到从样品切除的样品的探针尖端。 计算机可读指令包括使载物台运动控制器和纳米操纵器运动控制器以及离子束源自动执行样品从样本的原位提取的指令。

公开(公告)号：US20060022136A1

公开(公告)日：2006-02-02

申请号：US11186706

申请日：2005-07-21

Applicant: Thomas Moore

Inventor： Thomas Moore

IPC: G21K7/00

CPC classification number: H01J37/3178 ,  G21K7/00 ,  H01J37/3056 ,  H01J2237/006 ,  H01J2237/30411 ,  H01J2237/30455 ,  H01J2237/31 ,  H01J2237/31744

Abstract: We disclose a gas injection system having at least one crucible, each crucible holding at least one deposition constituent; at least one transfer tube, the number of transfer tubes corresponding to the number of crucibles, each transfer tube being connected to a corresponding crucible. There is at least one metering valve, the number of metering valves corresponding to the number of transfer tubes, each metering valve being connected to a corresponding transfer tube so that the metering valve can measure and adjust vapor flow in the corresponding transfer tube. A sensor is provided capable of sensing reactions between deposition constituents and a focused ion beam A computer is connected to receive the output of the sensor; the computer is also connected to each metering valve to control the operation of the valve, and the computer is programmed to send control signals to each metering valve to control the operation of the valve; the control signals being computed responsive to feedback from the output of the sensor.

Abstract translation: 我们公开了具有至少一个坩埚的气体注入系统，每个坩埚保持至少一个沉积成分; 至少一个传送管，传送管的数量对应于坩埚的数量，每个传送管连接到相应的坩埚。 存在至少一个计量阀，计量阀的数量对应于转移管的数量，每个计量阀连接到相应的转移管，使得计量阀可以测量和调节相应的转移管中的蒸气流。 提供能够感测沉积成分和聚焦离子束之间的反应的传感器。计算机被连接以接收传感器的输出; 计算机还连接到每个计量阀以控制阀的操作，并且计算机被编程为向每个计量阀发送控制信号以控制阀的操作; 响应于来自传感器的输出的反馈来计算控制信号。