公开(公告)号：US20240310722A1

公开(公告)日：2024-09-19

申请号：US18668793

申请日：2024-05-20

Applicant: Carl Zeiss SMT GmbH

Inventor： Michael Budach

IPC: G03F1/74 ,  G03F1/42 ,  H01J37/302

CPC classification number: G03F1/74 ,  G03F1/42 ,  H01J37/3023 ,  H01J2237/31737 ,  H01J2237/31742

Abstract: The present invention relates to methods and apparatuses for examining and/or processing a lithographic object, in particular a photomask, with a beam of charged particles in a working region on the object. In addition, the present invention relates to computer programs for controlling such apparatuses to perform such methods.
A method for examining and/or processing a lithographic object, in particular a photomask, with a beam of charged particles in a working region on the object, comprises the following steps: (a.) dividing the working region into a set of partial regions, and (b.) positioning a first quantity of first reference markings over the working region so that the first quantity of first reference markings lie within the working region.
A further method for examining and/or processing a lithographic object, in particular a photomask, with a beam of charged particles in a working region on the object, comprises the following steps: (a.) assigning at least one reference marking from a first quantity of first reference markings, which are distributed over the working region and lie within the working region, to at least one partial region from a set of partial regions into which the working region is divided, and (b.) performing the examination and/or processing of the object in the at least one partial region while taking into account the position of the assigned at least one reference marking.

公开(公告)号：US09824859B1

公开(公告)日：2017-11-21

申请号：US14980884

申请日：2015-12-28

Applicant: Multibeam Corporation

Inventor： Michael C. Smayling ,  Kevin M. Monahan ,  David K. Lam ,  Theodore A. Prescop

IPC: H01J37/30 ,  H01J37/317 ,  H01L21/3065 ,  H01L21/308 ,  H01J37/244

CPC classification number: H01L21/3065 ,  B81C1/00373 ,  B81C2201/0143 ,  B81C2201/0188 ,  C23C14/48 ,  C23C16/047 ,  C23C16/48 ,  C23C16/486 ,  C23C16/487 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/0635 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26 ,  H01L21/308 ,  H01L21/3085 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methods, devices and systems for targeted, maskless modification of material on or in a substrate using charged particle beams. Electrostatically-deflected charged particle beam columns can be targeted in direct dependence on the design layout database to perform direct and knock-on ion implantation, producing patterned material modifications with selected chemical and 3D-structural profiles. The number of required process steps is reduced, reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Local gas and photon injectors and detectors are local to corresponding individual columns, and support superior, highly-configurable process execution and control. Targeted implantation can be used to prepare the substrate for patterned blanket etch; patterned ALD can be used to prepare the substrate for patterned blanket deposition; neither process requiring photomasks or resist. Arrays of highly configurable beam columns can also be used to perform both positive and negative tone lithography in a single pass.

公开(公告)号：US09721754B2

公开(公告)日：2017-08-01

申请号：US13103281

申请日：2011-05-09

Applicant: Tristan Bret ,  Petra Spies ,  Thorsten Hofmann

Inventor： Tristan Bret ,  Petra Spies ,  Thorsten Hofmann

IPC: H01J37/304 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/74 ,  H01J37/305

CPC classification number: H01J37/3045 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/74 ,  H01J37/3056 ,  H01J2237/31737 ,  H01J2237/31744

Abstract: The invention relates to a method for processing a substrate with a focussed particle beam which incidents on the substrate, the method comprising the steps of: (a) generating at least one reference mark on the substrate using the focused particle beam and at least one processing gas, (b) determining a reference position of the at least one reference mark, (c) processing the substrate using the reference position of the reference mark, and (d) removing the at least one reference mark from the substrate.

公开(公告)号：US09556521B1

公开(公告)日：2017-01-31

申请号：US14809985

申请日：2015-07-27

Applicant: Multibeam Corporation

Inventor： Theodore A. Prescop ,  Kevin M. Monahan ,  David K. Lam ,  Michael C. Smayling

IPC: C23C16/48 ,  H01J37/06 ,  H01J37/08 ,  H01J37/244 ,  H01J37/30

CPC classification number: H01L21/3065 ,  B81C1/00373 ,  B81C2201/0143 ,  B81C2201/0188 ,  C23C14/48 ,  C23C16/047 ,  C23C16/48 ,  C23C16/486 ,  C23C16/487 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/0635 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26 ,  H01L21/308 ,  H01L21/3085 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methods, devices and systems for patterning of substrates using charged particle beams without photomasks and without a resist layer. Material can be deposited onto a substrate, as directed by a design layout database, localized to positions targeted by multiple, matched charged particle beam columns. Reducing the number of process steps, and eliminating lithography steps, in localized material addition has the dual benefit of reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Furthermore, highly localized, precision material deposition allows for controlled variation of deposition rate and enables creation of 3D structures. Local gas injectors and detectors, and local photon injectors and detectors, are local to corresponding ones of the columns, and can be used to facilitate rapid, accurate, targeted, highly configurable substrate processing, advantageously using large arrays of said beam columns.

Abstract translation: 用于使用没有光掩模并且没有抗蚀剂层的带电粒子束来图案化衬底的方法，装置和系统。 材料可以沉积到衬底上，如设计布局数据库所指示的那样，被定位到由多个匹配的带电粒子束柱靶向的位置上。 减少工艺步骤的数量和消除光刻步骤在局部化材料添加中具有减少制造周期时间并通过降低缺陷引入概率来提高产量的双重优点。 此外，高度局部化的精密材料沉积允许沉积速率的受控变化并且能够创建3D结构。 局部气体注入器和检测器以及本地光子注入器和检测器对于相应的列是局部的，并且可以用于促进快速，准确，有针对性的高度可配置的衬底处理，有利地使用所述束柱的大阵列。

公开(公告)号：US08658994B2

公开(公告)日：2014-02-25

申请号：US13354938

申请日：2012-01-20

Applicant: Michael John Zani ,  Mark Joseph Bennahmias ,  Jeffrey Winfield Scott

Inventor： Michael John Zani ,  Mark Joseph Bennahmias ,  Jeffrey Winfield Scott

IPC: H01L21/265 ,  H01L21/425 ,  H01L29/06 ,  G21K5/10

CPC classification number: H01J37/3056 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/3007 ,  H01J37/304 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0432 ,  H01J2237/047 ,  H01J2237/30472 ,  H01J2237/31713 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01J2237/3175 ,  H01J2237/31766 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/76267 ,  H01L21/84 ,  H01L27/0629 ,  H01L29/66462 ,  H01L29/66659 ,  Y10T428/24802 ,  Y10T428/24893

Abstract: A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.

Abstract translation: 用于将工件暴露于带电粒子的室包括用于产生带电粒子流的带电粒子源，准直器，被配置为沿着轴准直和引导带电粒子流从带电粒子源流出，准直器下游的光束数字化器 被配置为通过调整沿着轴的带电粒子之间的纵向间隔来创建包括至少一个带电粒子的组的数字光束，所述光束数字转换器的下游的偏转器包括沿轴线纵向设置以偏转数字光束的一系列偏转级， 以及构造成保持工件的偏转器下游的工件台。

公开(公告)号：US08455840B2

公开(公告)日：2013-06-04

申请号：US13276879

申请日：2011-10-19

Applicant: Lawrence Scipioni

Inventor： Lawrence Scipioni

IPC: H01J27/26 ,  H01J27/02 ,  H01J37/26 ,  H01J49/10

CPC classification number: H01J37/08 ,  H01J37/28 ,  H01J37/3005 ,  H01J2237/0453 ,  H01J2237/0653 ,  H01J2237/0802 ,  H01J2237/31732 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749

Abstract: The disclosure relates to ion beams systems, such as gas field ion microscopes, having multiple modes of operation, as well as related methods. In some embodiments, the disclosure provides a method of operating a gas field ion microscope system that includes a gas field ion source, where the gas field ion source includes a tip including a plurality of atoms.

Abstract translation: 本公开涉及具有多种操作模式的离子束系统，例如气体离子显微镜，以及相关方法。 在一些实施例中，本公开提供了一种操作包括气体离子源的气体场离子显微镜系统的方法，其中气体场离子源包括具有多个原子的尖端。

公开(公告)号：US20100098922A1

公开(公告)日：2010-04-22

申请号：US12642615

申请日：2009-12-18

Applicant: Michael John Zani ,  Mark Joseph Bennahmias ,  Mark Anthony Mayse ,  Jeffrey Winfield Scott

Inventor： Michael John Zani ,  Mark Joseph Bennahmias ,  Mark Anthony Mayse ,  Jeffrey Winfield Scott

IPC: B32B5/16 ,  H01L21/302 ,  H01L21/265 ,  B32B3/00

CPC classification number: H01J37/3056 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/3007 ,  H01J37/304 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0432 ,  H01J2237/047 ,  H01J2237/30472 ,  H01J2237/31713 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01J2237/3175 ,  H01J2237/31766 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/76267 ,  H01L21/84 ,  H01L27/0629 ,  H01L29/66462 ,  H01L29/66659 ,  Y10T428/24802 ,  Y10T428/24893

Abstract: A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.

Abstract translation: 用于将工件暴露于带电粒子的室包括用于产生带电粒子流的带电粒子源，准直器，被配置为沿着轴准直和引导带电粒子流从带电粒子源流出，准直器下游的光束数字化器 被配置为通过调整沿着轴的带电粒子之间的纵向间隔来创建包括至少一个带电粒子的组的数字光束，所述光束数字转换器的下游的偏转器包括沿轴线纵向设置以偏转数字光束的一系列偏转级， 以及构造成保持工件的偏转器下游的工件台。

公开(公告)号：US07501644B2

公开(公告)日：2009-03-10

申请号：US11841593

申请日：2007-08-20

Applicant: Michael John Zani ,  Mark Joseph Bennahmias ,  Mark Anthony Mayse ,  Jeffrey Winfield Scott

Inventor： Michael John Zani ,  Mark Joseph Bennahmias ,  Mark Anthony Mayse ,  Jeffrey Winfield Scott

IPC: G21K5/10 ,  H01J37/08

CPC classification number: H01J37/3056 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/3007 ,  H01J37/304 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0432 ,  H01J2237/047 ,  H01J2237/30472 ,  H01J2237/31713 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01J2237/3175 ,  H01J2237/31766 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/76267 ,  H01L21/84 ,  H01L27/0629 ,  H01L29/66462 ,  H01L29/66659 ,  Y10T428/24802 ,  Y10T428/24893

Abstract: A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.

公开(公告)号：US07495245B2

公开(公告)日：2009-02-24

申请号：US11841724

申请日：2007-08-20

Applicant: Michael John Zani ,  Mark Joseph Bennahmias ,  Mark Anthony Mayse ,  Jeffrey Winfield Scott

Inventor： Michael John Zani ,  Mark Joseph Bennahmias ,  Mark Anthony Mayse ,  Jeffrey Winfield Scott

IPC: G21K5/10 ,  H01J37/08

CPC classification number: H01J37/3056 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/3007 ,  H01J37/304 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0432 ,  H01J2237/047 ,  H01J2237/30472 ,  H01J2237/31713 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01J2237/3175 ,  H01J2237/31766 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/76267 ,  H01L21/84 ,  H01L27/0629 ,  H01L29/66462 ,  H01L29/66659 ,  Y10T428/24802 ,  Y10T428/24893

Abstract: A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.

公开(公告)号：US07488960B2

公开(公告)日：2009-02-10

申请号：US11841608

申请日：2007-08-20

Applicant: Michael John Zani ,  Mark Joseph Bennahmias ,  Mark Anthony Mayse ,  Jeffrey Winfield Scott

Inventor： Michael John Zani ,  Mark Joseph Bennahmias ,  Mark Anthony Mayse ,  Jeffrey Winfield Scott

IPC: G21K5/10 ,  H01J37/08

CPC classification number: H01J37/3056 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/3007 ,  H01J37/304 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0432 ,  H01J2237/047 ,  H01J2237/30472 ,  H01J2237/31713 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01J2237/3175 ,  H01J2237/31766 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/76267 ,  H01L21/84 ,  H01L27/0629 ,  H01L29/66462 ,  H01L29/66659 ,  Y10T428/24802 ,  Y10T428/24893

Abstract: A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.