公开(公告)号：US6157020A

公开(公告)日：2000-12-05

申请号：US984950

申请日：1997-12-04

申请人： Pascal Krapf ,  Eric Costard ,  Philippe Bois

发明人： Pascal Krapf ,  Eric Costard ,  Philippe Bois

IPC分类号： H01L31/0248 ,  H01L25/04 ,  H01L27/146 ,  H01J40/14

CPC分类号： H01L25/043 ,  H01L27/1465 ,  H01L2924/0002

摘要： The disclosure relates to a bispectral electromagnetic wave detector including at least one first and one second overlaid plane active detector elements separated by a common layer, said first and second detector elements being sensitive to the different wavelengths; a first means of connection connected in common to said first and second detector elements, a second means of connection connected to said first detector element, and a third means of connection connected to said second detector element; means for applying successively a control voltage to each means of connection; and means connected to said first means of connection to detect a photoconduction current each time a control voltage is applied. The invention is used in applications requiring detection of electromagnetic waves in two bands of different wavelengths.

摘要翻译： 本发明涉及一种双谱电磁波检测器，包括由公共层分离的至少一个第一和第二叠层有源检测器元件，所述第一和第二检测器元件对不同波长敏感; 连接到所述第一和第二检测器元件的第一连接装置，连接到所述第一检测器元件的第二连接装置和连接到所述第二检测器元件的第三连接装置; 用于连续地对每个连接装置施加控制电压的装置; 以及连接到所述第一连接装置的装置，以在每次施加控制电压时检测光电导电流。 本发明用于需要检测不同波长的两个波段中的电磁波的应用中。

公开(公告)号：US6133991A

公开(公告)日：2000-10-17

申请号：US192770

申请日：1998-11-16

申请人： DuWain K. Ake

发明人： DuWain K. Ake

IPC分类号： G01C15/00 ,  H01L31/0248 ,  G01C3/08 ,  G01B11/26 ,  H01L27/00

CPC分类号： G01C15/006 ,  H01L31/0248

摘要： An improved photocell configuration is provided to create a more accurate laser receiver that not only is very accurate and flexible in its operational capabilities, but also can greatly reduce the effect of rotational offset due to shading of the photocell. In one embodiment, a very long photocell is provided in which multiple split-cells are used to present a geometry that will tend to negate some of the effects of shading. The shading effects are minimized by having a different active photocell area along each vertical edge of the photocell. In another embodiment, a "segmented" photocell is used, in which the split-cell design of a long photocell is also divided into vertical segments. These segments can be re-configured so that alternating segments comprise a mirror image about the longitudinal of the long photocell. Such an arrangement tends to reduce the effect of rotational offset due to shading to an extremely small percentage of error. The segmented photocell configuration of the present invention is capable of being manufactured in "cell units" of relatively small length that can be stacked up next to one another to build a very long photocell. Each of the smaller segmented photocell structures can be manufactured using standard integrated circuit processing in lengths of less than two inches for ease of manufacture.

摘要翻译： 提供改进的光电池配置以创建更精确的激光接收器，其不仅在其操作能力方面非常精确和灵活，而且还可以大大降低由于光电池的阴影引起的旋转偏移的影响。 在一个实施例中，提供了非常长的光电池，其中多个分裂单元用于呈现将倾向于否定阴影的一些影响的几何形状。 通过在光电池的每个垂直边缘处具有不同的有源光电池区域来最小化阴影效应。 在另一实施例中，使用“分段”光电管，其中长光电池的分裂电池设计也被分成垂直段。 可以重新配置这些段，使得交替的段包括围绕长光电池的纵向的镜像。 这种布置趋向于将由于阴影引起的旋转偏移的影响降低到极小百分比的误差。 本发明的分段光电管结构能够以相对较小长度的“单元单元”制造，可以相互堆叠堆叠以形成非常长的光电管。 每个较小的分段光电池结构可以使用长度小于2英寸的标准集成电路处理来制造，以便于制造。

公开(公告)号：US5582648A

公开(公告)日：1996-12-10

申请号：US540153

申请日：1995-10-06

申请人： Hiroyuki Katagiri ,  Tetsuya Takei ,  Toshiyasu Shirasuna

发明人： Hiroyuki Katagiri ,  Tetsuya Takei ,  Toshiyasu Shirasuna

IPC分类号： G03G5/08 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  C23C16/511 ,  G03G5/082 ,  H01L21/205 ,  H01L31/0248 ,  C23C16/00

CPC分类号： C23C16/45508 ,  C23C16/45578 ,  C23C16/511 ,  G03G5/082

摘要： A microwave plasma chemical vapor deposition apparatus for forming a functional deposited film on a plurality of Substrates which includes a substantially enclosed film-forming chamber comprising an outer wall having an end portion thereof provided with a microwave introducing window to which a waveguide extending from a microwave power source is connected, The film-forming chamber has a cylindrical discharge space encircled by a plurality of rotatable cylindrical substrate holders. Each of the cylindrical substrate holders has a substrate thereon. The cylindrical substrate holders are concentrically arranged in the film-forming chamber. The film forming chamber is provided with means for evacuating the film-forming chamber and means for supplying a raw material gas into the discharge space. The means for supplying the raw material gas comprises one or more gas feed pipes provided with a plurality of gas liberation holes capable of supplying a raw material gas radiately against each of the substrates. The gas feed pipes are longitudinally installed substantially at the center position of the discharge space.

摘要翻译： 一种用于在多个基板上形成功能性沉积膜的微波等离子体化学气相沉积设备，其包括基本上封闭的成膜室，其包括具有端部的外壁，所述外壁的端部设置有微波引入窗口，从微波延伸的波导 电源连接。成膜室具有由多个可旋转圆柱形基板保持件包围的圆柱形放电空间。 每个圆柱形衬底保持器在其上具有衬底。 圆柱形基板保持器同心地布置在成膜室中。 成膜室设置有用于抽出成膜室的装置和用于将原料气体供给到放电空间的装置。 用于供给原料气体的装置包括一个或多个气体供给管，该气体供给管设置有能够向每个基板辐射供给原料气体的多个气体释放孔。 气体供给管纵向地安装在放电空间的中心位置。

公开(公告)号：US5536933A

公开(公告)日：1996-07-16

申请号：US359279

申请日：1994-12-19

申请人： Yoshihiro Izumi ,  Sayuri Fujiwara ,  Akitsugu Hatano ,  Yoshitaka Yamamoto

发明人： Yoshihiro Izumi ,  Sayuri Fujiwara ,  Akitsugu Hatano ,  Yoshitaka Yamamoto

IPC分类号： G02F1/135 ,  G09F9/33 ,  H01L21/145 ,  H01L27/15 ,  H01L31/0248 ,  H01L31/0376 ,  H01J40/14

CPC分类号： H01L31/03762 ,  G02F1/1354 ,  Y02E10/548

摘要： The light information device of the invention includes a semiconductor having a photoconductive effect or a photovoltaic effect. In the light information device, a photoconductivity and a dark conductivity of the semiconductor are varied by an aging process using an external stimulus, and the photoconductivity and the dark conductivity after the aging process have values which are equal to or lower than 20% of respective initial values thereof before the aging process.

摘要翻译： 本发明的光信息装置包括具有光电导效应或光电效应的半导体。 在光信息装置中，通过使用外部刺激的老化处理来改变半导体的光电导率和暗电导率，老化处理后的光电导率和暗电导率等于或低于相应的20％的值 在老化过程之前的初始值。

公开(公告)号：US5154135A

公开(公告)日：1992-10-13

申请号：US652249

申请日：1991-02-06

申请人： Shunichi Ishihara

发明人： Shunichi Ishihara

IPC分类号： C23C16/24 ,  C23C16/452 ,  C23C16/48 ,  C23C16/50 ,  G03G5/08 ,  G03G5/082 ,  H01L21/205 ,  H01L31/0248

CPC分类号： C23C16/24 ,  C23C16/452

摘要： An apparatus for forming a deposited film comprises a deposition chamber holding a carrier therein, a halogen radical-introducing tube for introducing into said chamber a radical containing at least halogen atoms and a hydrogen radical-introducing tube for introducing into said chamber a radical containing hydrogen atoms, the halogen radical-introducing tube and the hydrogen radical-introducing tube each having an angle of 40.degree. to 50.degree. to the surface of said carrier, and a deposited film is formed on said carrier from said radicals.

摘要翻译： 一种用于形成沉积膜的装置，包括一个保持载体的沉积室，一个用于将至少含有卤素原子的基团引入所述腔室中的卤素自由基引入管，以及用于向所述腔室中引入含氢的基团 原子，卤素自由基导入管和氢自由基导入管各自与所述载体的表面成40度〜50度的角度，并且在所述载体上形成沉积膜。

公开(公告)号：US5063286A

公开(公告)日：1991-11-05

申请号：US628005

申请日：1990-12-17

申请人： Yutaka Kaneko

发明人： Yutaka Kaneko

IPC分类号： H04N1/028 ,  H01L25/04 ,  H01L27/146 ,  H01L27/148 ,  H01L31/0203 ,  H01L31/0248 ,  H01L31/10 ,  H04N1/19

CPC分类号： H01L31/0203 ,  H01L25/042 ,  H01L27/14618 ,  H01L27/148 ,  H01L2924/0002

摘要： A multi-chip type image sensor includes, a base, a plurality of sensor chips arranged on the base so as to be staggered so that adjacent sensor chips among the sensor chips partially overlap with each other in the direction perpendicular to a direction in which the sensor chips are arranged. The sensor chips are fastened to the base by an adhesive for use in die bonding. Each of the sensor chips has a plurality of light receiving elements arranged into a line at a predetermined pixel pitch Pd. Each of the sensor chip contains silicon. Therminal pins are supported on the base and electrically coupled to the sensor chips. The following formula is satisfied:Pc=Pd.times.[1+(Tc-Ta) (.alpha..sub.B -.alpha..sub.Si)]where Tc [.degree.C.] is a curing temperature of the adhesive, Ta [.degree.C.] is an environment temperature at which the image sensor is to be used, .alpha..sub.Si is a thermal expansion coefficient of each of the sensor chips comprising silicon, .alpha..sub.B is a thermal expansion coefficient of the base, and Pc is a pixel pitch at which the light receiving elements are arranged in each of the sensor chips before the adhesive is cured by die bonding.

摘要翻译： 多片式图像传感器包括：基座，布置在基座上的多个传感器芯片，以便交错，使得传感器芯片中的相邻传感器芯片在垂直于方向的方向上彼此部分重叠 设置传感器芯片。 传感器芯片通过用于芯片接合的粘合剂固定到基座上。 每个传感器芯片具有以预定像素间距Pd排列成一行的多个光接收元件。 每个传感器芯片都包含硅。 热针支撑在基座上并电耦合到传感器芯片。 满足以下公式：Pc = Pdx [1+（Tc-Ta）（αBa-SiSi）]其中Tc [℃]为粘合剂的固化温度，Ta [℃]为环境温度 要使用图像传感器，αSi是包括硅的每个传感器芯片的热膨胀系数，αB是基底的热膨胀系数，Pc是光接收元件的像素间距 在粘合剂通过芯片粘合固化之前布置在每个传感器芯片中。

公开(公告)号：US5049950A

公开(公告)日：1991-09-17

申请号：US565206

申请日：1990-08-09

申请人： Yoshihisa Fujii ,  Mitsuhiro Shigeta ,  Katsuki Furukawa ,  Kenji Nakanishi ,  Atsuko Ogura

发明人： Yoshihisa Fujii ,  Mitsuhiro Shigeta ,  Katsuki Furukawa ,  Kenji Nakanishi ,  Atsuko Ogura

IPC分类号： H01L31/108 ,  H01L31/0248 ,  H01L31/0312 ,  H01L31/113 ,  H01L31/20

CPC分类号： H01L31/0312 ,  H01L31/113 ,  H01L31/204 ,  Y02E10/50 ,  Y02P70/521

摘要： A MIS structure is provided which uses a photoconductive amorphous silicon carbide layer as an insulator layer in the MIS structure. The insulator layer is disposed on an n-type layer of single crystal silicon carbide and a translucent metal layer is disposed thereon. The metal layer is biased with a negative voltage so that the capacitance between the metal layer and the semiconductor layer changes in response to whether on the metal layer is illuminated with light.

摘要翻译： 提供了MIS结构，其在MIS结构中使用光导非晶碳化硅层作为绝缘体层。 绝缘体层设置在单晶碳化硅的n型层上，并且在其上设置透光性金属层。 金属层被负电压偏置，使得金属层和半导体层之间的电容响应于在金属层上是否被光照亮而改变。

公开(公告)号：US5028488A

公开(公告)日：1991-07-02

申请号：US226819

申请日：1988-08-01

申请人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Masahiro Kanai ,  Tsutomu Murakami ,  Kozo Arao ,  Yasushi Fujioka

发明人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Masahiro Kanai ,  Tsutomu Murakami ,  Kozo Arao ,  Yasushi Fujioka

IPC分类号： C30B33/00 ,  C30B29/22 ,  C30B29/30 ,  C30B33/02 ,  G02F1/03 ,  G02F1/05 ,  H01L21/205 ,  H01L21/365 ,  H01L31/0248 ,  H01L31/0296 ,  H01L31/0392 ,  H01L31/04 ,  H01L31/068 ,  H01L31/18

CPC分类号： H01L31/1832 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L31/02966 ,  H01L31/0392 ,  H01L31/068 ,  Y02E10/547 ,  Y10T428/31678

摘要： A functional ZnSe.sub.1-x Te.sub.x :H film having a high doping efficiency and with no substantial change in the characteristics upon light irradiation. Said film is characterized in that the Se/Te quantitative ratio is in the range from 3:7 to 1:9 by the atom number ratio, hydrogen atoms are contained in an amount of 1 to 4 atomic % and the ratio of the crystal grain domains per unit volume is in the range from 65 to 85% by volume. There are also provided improved p-type and n-type ZnSe.sub.1-x Te.sub.x :H:M films (M stands for a dopant) of high electroconductivity characterized in the foregoing way.These deposited films may be efficiently deposited even on a non-single crystal substrate made of metal, glass or synthetic resin with a high deposition rate.These films are suited for the preparation of a high functional device such as a photovoltaic element.

摘要翻译： 功能性ZnSe1-xTex：H膜具有高的掺杂效率，并且在光照射下的特性没有显着变化。 所述膜的特征在于Se / Te的定量比在3:7至1:9的范围内以原子数比计，氢原子的含量为1至4原子％，晶粒的比例 每单位体积的畴数在65至85体积％范围内。 还提供了以上述方式表征的改进的高导电性的p型和n型ZnSe1-xTex：H：M膜（M代表掺杂剂）。 这些沉积膜即使在金属，玻璃或合成树脂制成的非单晶衬底上也可以高沉积速率。 这些膜适用于制备诸如光电元件的高功能器件。

公开(公告)号：US4973537A

公开(公告)日：1990-11-27

申请号：US361698

申请日：1989-06-01

申请人： Sadahiro Tei

发明人： Sadahiro Tei

IPC分类号： C08F20/00 ,  C08F20/12 ,  C08F20/26 ,  C08F20/30 ,  C08F20/38 ,  G03G5/147 ,  H01L21/312 ,  H01L31/0216 ,  H01L31/0248 ,  H01L31/09 ,  H01L31/10 ,  H01L51/42

CPC分类号： G03G5/14734 ,  G03G5/14786 ,  H01L31/0216 ,  H01L31/095

摘要： A photoconductive element is described, comprising an amorphous silicon sensor and a transparent, insulative protective layer on the sensor, said protective layer comprising polymers or copolymers (including terpolymers, etc.) having one of four specific types of recurring units, or mixtures thereof, or polymer compositions composed mainly of the above polymers or copolymers; such a photoconductive element shows reduced damage of the sensor as compared to the conventional technique, and permits increases in productivity and decreases in production costs.

摘要翻译： 描述了一种感光元件，其包括非晶硅传感器和传感器上的透明绝缘保护层，所述保护层包含具有四种特定类型的重复单元之一或其混合物的聚合物或共聚物（包括三元共聚物等） 或主要由上述聚合物或共聚物组成的聚合物组合物; 与常规技术相比，这种感光元件显示出传感器的损坏减少，并且允许生产率提高和生产成本降低。

公开(公告)号：US4939561A

公开(公告)日：1990-07-03

申请号：US327455

申请日：1989-03-22

申请人： Eiso Yamaka ,  Fumio Hasegawa ,  Takashi Moriyama ,  Tamisuke Koizumi

发明人： Eiso Yamaka ,  Fumio Hasegawa ,  Takashi Moriyama ,  Tamisuke Koizumi

IPC分类号： G01J1/02 ,  H01L27/148 ,  H01L31/0248 ,  H01L31/0264 ,  H01L31/0312 ,  H01L31/108 ,  H01L31/18

CPC分类号： H01L31/0312 ,  H01L31/108 ,  H01L31/1812 ,  Y02E10/50

摘要： An infrared sensor includes a metal and a semiconductor contacted to each other via a rectifying potential barrier. The semiconductor includes a p-type strained Si.sub.1-X Ge.sub.X epitaxial layer grown on a p-type substrate, wherein the character X denotes a Ge atomic fraction and wherein X increases from zero to a predetermined upper limit in a direction away from the Si substrate toward the metal. The metal may be selected from the group of Pt, an alloy of Pt and Si, and an alloy of Pt, Si, and Ge. In addition, the metal may also be selected from the group of Ir, an alloy of Ir and Si, and an alloy of Ir, Si, and Ge.

摘要翻译： 红外传感器包括通过整流势垒彼此接触的金属和半导体。 半导体包括在p型衬底上生长的p型应变Si1-XGeX外延层，其中字符X表示Ge原子分数，并且其中X在远离Si衬底的方向上从零增加到预定上限 金属。 金属可以选自Pt，Pt和Si的合金以及Pt，Si和Ge的合金。 此外，金属也可以选自Ir，Ir和Si的合金以及Ir，Si和Ge的合金。