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公开(公告)号：US20240130247A1
公开(公告)日：2024-04-18
申请号：US18397344
申请日：2023-12-27
申请人： TDK CORPORATION
发明人： Tomoyuki Sasaki
IPC分类号： H10N52/00 , G01R33/09 , G11B5/39 , G11C11/16 , G11C11/18 , H01F10/32 , H01L27/105 , H01L29/82 , H03B15/00 , H10B61/00 , H10N50/10 , H10N50/80 , H10N50/85 , H10N52/01 , H10N52/80
CPC分类号： H10N52/00 , G01R33/098 , G11B5/39 , G11C11/161 , G11C11/1675 , G11C11/1697 , G11C11/18 , H01F10/32 , H01F10/3254 , H01F10/329 , H01L27/105 , H01L29/82 , H03B15/00 , H03B15/006 , H10B61/00 , H10N50/10 , H10N50/80 , H10N50/85 , H10N52/01 , H10N52/80 , H01F10/3286
摘要： This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.
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公开(公告)号：US20240130141A1
公开(公告)日：2024-04-18
申请号：US18395649
申请日：2023-12-25
发明人： Ya-Huei Tsai , Rai-Min Huang , Yu-Ping Wang , Hung-Yueh Chen
IPC分类号： H10B61/00 , H01L23/528 , H10N50/80
CPC分类号： H10B61/22 , H01L23/528 , H10N50/80 , G11C11/161
摘要： A layout pattern for magnetoresistive random access memory (MRAM) includes a substrate having a first active region, a second active region, and a word line connecting region between the first active region and the second active region, a first gate pattern extending along a first direction from the first active region to the second active region, a second gate pattern extending along the first direction from the first active region to the second active region, a first magnetic tunneling junction (MTJ) between the first gate pattern and the second pattern and within the word line connecting region, and a second MTJ between the first gate pattern and the second gate pattern in the first active region. Preferably, top surfaces of the first MTJ and the second MTJ are coplanar.
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公开(公告)号：US11963459B2
公开(公告)日：2024-04-16
申请号：US17469778
申请日：2021-09-08
申请人： Kioxia Corporation
CPC分类号： H10N50/10 , G11C11/161 , G11C19/0841 , H10N50/80 , H10N50/85 , H10B61/00
摘要： A switching device according to an embodiment includes a switching layer disposed between a first electrode and a second electrode. The switching layer contains a material containing a first cation element Z, Te, and N. This material contains at least 5 atomic % or more of each of Z, Te, and N, and when an atomic ratio of Te is X, an atomic ratio of N is Y, an atomic ratio of Z is W, a ratio of Z2Te3 to ZN on a straight line connecting a compound of the first cation element Z with tellurium and nitride of the first cation element Z in a ternary phase diagram of Z, Te, and N is A, and a change in an N content from the Z2Te3—ZN line is B, the material has a composition satisfying X=1.2 (1−A) (0.5+B), Y=A (0.5+B), and W=1−X−Y, where −0.06≤B≤0.06 is satisfied when ⅓>A and ¾
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公开(公告)号：US11963458B2
公开(公告)日：2024-04-16
申请号：US16971797
申请日：2019-03-11
申请人： TOHOKU UNIVERSITY
发明人： Koichi Nishioka , Tetsuo Endoh , Shoji Ikeda , Hiroaki Honjo , Hideo Sato , Sadahiko Miura
IPC分类号： H01L27/22 , G11C11/16 , H01L27/105 , H01L29/82 , H10B61/00 , H10N50/01 , H10N50/10 , H10N50/80 , H10N50/85
CPC分类号： H10N50/10 , G11C11/161 , H01L27/105 , H01L29/82 , H10B61/00 , H10N50/01 , H10N50/80 , H10N50/85
摘要： Provided are a magnetic tunnel junction dement suppressing diffusion and penetration of constituent elements between a hard mask film, and a magnetic tunnel junction film and a protection layer, and a method for manufacturing the magnetic tunnel junction element.
The magnetic tunnel junction element has a configuration in which a non-magnetic insertion layer (7) including Ta or the like is inserted beneath a hard mask layer (8).-
公开(公告)号：US11963368B2
公开(公告)日：2024-04-16
申请号：US17330295
申请日：2021-05-25
发明人： Chun-Chieh Mo , Shih-Chi Kuo , Tsai-Hao Hung
IPC分类号： H10B63/00 , H10B61/00 , H10N50/01 , H10N50/10 , H10N50/80 , H10N50/85 , H10N70/00 , H10N70/20
CPC分类号： H10B63/24 , H10B61/10 , H10B63/80 , H10N50/01 , H10N50/10 , H10N50/80 , H10N70/021 , H10N70/063 , H10N70/231 , H10N70/24 , H10N70/245 , H10N70/826 , H10N70/841 , H10N50/85 , H10N70/8825 , H10N70/8833 , H10N70/8845
摘要： A memory includes: a dielectric fin formed over a substrate; and a pair of memory cells disposed along respective sidewalls of the dielectric fin, each of the pair of memory cells comprising: a first conductor layer; a selector layer; a resistive material layer; and a second conductor layer, wherein the first conductor layer, selector layer, resistive material layer, and second conductor layer each includes upper and lower boundaries, and at least one of the upper and lower boundaries is tilted away from one of the sidewalls of the dielectric fin by an angle.
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46.发明公开公开(公告)号：US20240122075A1
公开(公告)日：2024-04-11
申请号：US18264903
申请日：2021-03-19
发明人： Guozhong XING , Long LIU , Di WANG , Huai LIN , Yan WANG , Xiaoxin XU , Ming LIU
摘要： An activation function generator based on a magnetic domain wall driven magnetic tunnel junction and a method for manufacturing the same are provided, including: a spin orbit coupling layer configured to generate a spin orbit torque; a ferromagnetic free layer formed on the spin orbit coupling layer and configured to provide a magnetic domain wall motion racetrack; a nonmagnetic barrier layer formed on the ferromagnetic free layer; a ferromagnetic reference layer formed on the nonmagnetic barrier layer; a top electrode formed on the ferromagnetic reference layer; antiferromagnetic pinning layers formed on two ends of the ferromagnetic free layer; a left electrode and a right electrode respectively formed at two positions on the antiferromagnetic pinning layers.
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公开(公告)号：US11956971B2
公开(公告)日：2024-04-09
申请号：US17027330
申请日：2020-09-21
发明人： Huanlong Liu , Guenole Jan , Ru-Ying Tong , Jian Zhu , Yuan-Jen Lee , Jodi Mari Iwata , Sahil Patel , Vignesh Sundar
摘要： A fabrication process for an STT MTJ MRAM device includes steps of cooling the device at individual or at multiple stages in its fabrication. The cooling process, which may be equally well applied during the fabrication of other multi-layered devices, is demonstrated to produce an operational device that is more resistant to adverse thermal effects during operation that would normally cause a similar device not so fabricated to lose stored data and otherwise fail to operate properly.
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公开(公告)号：US11955152B2
公开(公告)日：2024-04-09
申请号：US17541401
申请日：2021-12-03
摘要： A semiconductor device includes a bottom electrode contact disposed over one or more of a plurality of conductive lines, magnetoresistive random access memory (MRAM) pillars constructed over the bottom electrode contact, an encapsulation layer section disposed between a pair of the MRAM pillars such that an aspect ratio of a tight pitch gap between the pair of the MRAM pillars is reduced, and a dielectric disposed within the encapsulation layer section, wherein the dielectric fills an entirety of a space defined within the encapsulation layer section. The MRAM pillars have a generally rectangular-shaped or cone-shaped configuration and the encapsulation layer section has a generally U-shaped or V-shaped configuration.
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公开(公告)号：US11950522B2
公开(公告)日：2024-04-02
申请号：US17847034
申请日：2022-06-22
申请人： SK hynix Inc.
发明人： Myoung Sub Kim , Tae Hoon Kim , Beom Seok Lee , Seung Yun Lee , Hwan Jun Zang , Byung Jick Cho , Ji Sun Han
CPC分类号： H10N70/841 , H10B61/00 , H10B63/84 , H10N50/01 , H10N50/80 , H10N70/011 , H10N70/231
摘要： A method for manufacturing an electronic device including a semiconductor memory may include forming a first carbon electrode material, surface-treating the first carbon electrode material to decrease a surface roughness of the first carbon electrode material, and forming a second carbon electrode material on the treated surface of the first carbon electrode material. The second carbon electrode material may have a thickness that is greater than a thickness of the first carbon electrode material.
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公开(公告)号：US11948616B2
公开(公告)日：2024-04-02
申请号：US17808404
申请日：2022-06-23
发明人： Xiaoguang Wang , Dinggui Zeng , Huihui Li , Jiefang Deng , Kanyu Cao
CPC分类号： G11C11/161 , G11C11/1655 , H10B61/22 , H10N50/01 , H10N50/10 , H10N50/80
摘要： The present disclosure relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate; a transistor, including a control terminal, a first terminal, and a second terminal; a first magnetic memory structure, a bottom electrode of which is electrically connected to the first terminal of the transistor; a second magnetic memory structure, a top electrode of which is electrically connected to the first terminal of the transistor, the bottom electrode of the first magnetic memory structure is located in a same layer with a bottom electrode of the second magnetic memory structure; a first bit line, electrically connected to a top electrode of the first magnetic memory structure; a second bit line, electrically connected to the bottom electrode of the second magnetic memory structure; and a selection line, electrically connected to a second terminal of the transistor.
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