Abstract:
In response to a first memory access transaction having a first base address, data fields and a repair fields are retrieved from a first DRAM channel. The data fields include a first data field. The repair fields include a first repair field storing repair data. The repair data is to replace any data in the first data field. In response to a second memory access transaction having a second base address, repair tag fields are retrieved from a second DRAM channel. The repair tag fields include a repair tag field that indicates the repair data is be replace the data stored in the first data field.
Abstract:
Embodiments of an integrated circuit (IC) comprising frequency change detection circuitry are described. Some embodiments include first circuitry to generate a second clock signal based on a first clock signal, wherein the first clock signal has a first clock frequency, and wherein the second clock signal has a second clock frequency that is an integral multiple of the first clock frequency. The embodiments further include second circuitry to obtain samples by oversampling the first clock signal using the second clock signal. Additionally, the embodiments include third circuitry to detect a change in the first clock frequency based on the samples.
Abstract:
An integrated circuit memory device is disclosed. The memory device includes at least one group of storage cells. Logic derives a count of error code correction events for each of the at least one group of storage cells. Storage stores the count. A memory control interface selectively communicates the count to a memory controller.
Abstract:
The embodiments described herein describe technologies for using the memory modules in different modes of operation, such as in a standard multi-drop mode or as in a dynamic point-to-point (DPP) mode (also referred to herein as an enhanced mode). The memory modules can also be inserted in the sockets of the memory system in different configurations.
Abstract:
A system that calibrates timing relationships between signals involved in performing write operations is described. This system includes a memory controller which is coupled to a set of memory chips, wherein each memory chip includes a phase detector configured to calibrate a phase relationship between a data-strobe signal and a clock signal received at the memory chip from the memory controller during a write operation. Furthermore, the memory controller is configured to perform one or more write-read-validate operations to calibrate a clock-cycle relationship between the data-strobe signal and the clock signal, wherein the write-read-validate operations involve varying a delay on the data-strobe signal relative to the clock signal by a multiple of a clock period.
Abstract:
A multi-phase partial response equalizer circuit includes sampler circuits that sample an input signal to generate sampled signals in response to sampling clock signals having different phases. A first multiplexer circuit selects one of the sampled signals as a first sampled bit to represent the input signal. A first storage circuit coupled to an output of the first multiplexer circuit stores the first sampled bit in response to a first clock signal. A second multiplexer circuit selects one of the sampled signals as a second sampled bit to represent the input signal based on the first sampled bit. A second storage circuit stores a sampled bit selected from the sampled signals in response to a second clock signal. A time period between the second storage circuit storing a sampled bit and the first storage circuit storing the first sampled bit is substantially greater than a unit interval in the input signal.
Abstract:
An integrated circuit is disclosed that includes a receiver circuit to receive duobinary data symbols from a first signaling lane. The receiver circuit includes sampling circuitry to determine symbol state, and a duobinary decoder. The duobinary decoder is coupled to the sampling circuitry and converts the detected states to a PAM2 coded symbol stream. A decision-feedback equalizer (DFE) is provided that has inputs coupled to the sampling circuitry in parallel with the duobinary decoder. The DFE cooperates with the sampling circuitry to form a feedback path, such that the duobinary decoder is external to the feedback path.
Abstract:
A method and system that provides for execution of a first calibration sequence, such as upon initialization of a system, to establish an operation value, which utilizes an algorithm intended to be exhaustive, and executing a second calibration sequence from time to time, to measure drift in the parameter, and to update the operation value in response to the measured drift. The second calibration sequence utilizes less resources of the communication channel than does the first calibration sequence. In one embodiment, the first calibration sequence for measurement and convergence on the operation value utilizes long calibration patterns, such as codes that are greater than 30 bytes, or pseudorandom bit sequences having lengths of 2N−1 bits, where N is equal to or greater than 7, while the second calibration sequence utilizes short calibration patterns, such as fixed codes less than 16 bytes, and for example as short as 2 bytes long.
Abstract:
An image sensor architecture with multi-bit sampling is implemented within an image sensor system. A pixel signal produced in response to light incident upon a photosensitive element is converted to a multiple-bit digital value representative of the pixel signal. If the pixel signal exceeds a sampling threshold, the photosensitive element is reset. During an image capture period, digital values associated with pixel signals that exceed a sampling threshold are accumulated into image data.
Abstract:
An integrated circuit device transmits to a dynamic random access memory (DRAM) one or more commands that specify programming of a digital control value within the DRAM, the digital control value indicating a termination impedance that the DRAM is to couple to a data interface of the DRAM in response to receiving a write command and during reception of write data corresponding to the write command, and that the DRAM is to decouple from the data interface after reception of the write data corresponding to the write command. Thereafter, the integrated circuit device transmits to the DRAM a write command indicating that write data is to be sampled by a data interface of the DRAM during a first time interval and that cause the DRAM to couple the termination impedance to the data interface during the first time interval and decouple the termination impedance from the data interface after the first time interval.