公开(公告)号：US20160101619A1

公开(公告)日：2016-04-14

申请号：US14975540

申请日：2015-12-18

Applicant: STMicroelectronics, Inc. ,  STMICROELECTRONICS S.R.L. ,  STMicroelectronics International N.V.

Inventor： Simon DODD ,  Joe SCHEFFELIN ,  Dave HUNT ,  Matt GIERE ,  Dana GRUENBACHER ,  Faiz SHERMAN

IPC: B41J2/14 ,  B41J2/16

CPC classification number: B05B17/0607 ,  B05B17/0638 ,  B05B17/0684 ,  B41J2/14016 ,  B41J2/14024 ,  B41J2/14056 ,  B41J2/14072 ,  B41J2/1433 ,  B41J2/1601 ,  B41J2/1632 ,  B41J2/175 ,  B41J2/17526 ,  B41J2/1753 ,  B41J2002/14338 ,  B41J2002/14491 ,  H05K1/0212 ,  H05K1/111 ,  H05K1/181 ,  Y10T29/49119

Abstract: The present disclosure is directed to a microfluidic die that includes a plurality of heaters above a substrate, a plurality of chambers and nozzles above the heaters, a plurality of first contacts coupled to the heaters, and a plurality of second contacts coupled to the heaters. The plurality of second contacts are coupled to each other and coupled to ground. The die includes a plurality of contact pads, a first signal line coupled to the plurality of second contacts and to a first one of the plurality of contact pads, and a plurality of second signal lines, each second signal line being coupled to one of the plurality of first contacts, groups of the second signal lines being coupled together to drive a group of the plurality of heaters with a single signal, each group of the second signal lines being coupled to a remaining one of the plurality of contact pads.

公开(公告)号：US20160101429A1

公开(公告)日：2016-04-14

申请号：US14975200

申请日：2015-12-18

Applicant: STMicroelectronics, Inc.

Inventor： Simon Dodd ,  Joseph Edward Scheffelin ,  Dave S. Hunt ,  Timothy James HOEKSTRA ,  Faiz SHERMAN ,  Stephan Gary Bush

IPC: B05B9/00 ,  B05B9/03 ,  A61L9/03 ,  B05B1/14

CPC classification number: A61L9/03 ,  A61L2/00 ,  A61L9/00 ,  B05B17/0684

Abstract: One or more embodiments are directed to a microfluidic delivery system that dispenses a fluid. The microfluidic delivery system may be provided in a variety of orientations. In one embodiment, the microfluidic delivery system is vertical so that fluid being expelled opposes gravity. In another embodiment, the microfluidic delivery system is orientated sideways so that fluid being expelled has a horizontal component. In yet another embodiment, the microfluidic delivery system faces downward.

Abstract translation: 一个或多个实施方案涉及分配流体的微流体递送系统。 微流体递送系统可以以各种方向提供。 在一个实施例中，微流体输送系统是垂直的，使得被排出的流体与重力相反。 在另一个实施方案中，微流体递送系统侧向定向，使得被排出的流体具​​有水平分量。 在另一个实施方案中，微流体递送系统面向下。

公开(公告)号：US20160100363A1

公开(公告)日：2016-04-07

申请号：US14965014

申请日：2015-12-10

Applicant: STMICROELECTRONICS, INC.

Inventor： LIWEN CHU ,  GEORGE A. VLANTIS

IPC: H04W52/02 ,  H04W40/00

CPC classification number: H04W52/0219 ,  H04W40/005 ,  H04W52/0216 ,  H04W52/0229 ,  H04W52/0258 ,  H04W72/1263 ,  H04W84/10 ,  H04W84/12 ,  Y02D70/142

Abstract: This invention relates to switching power saving modes and rescheduling communication frames for various periods of a beacon interval (BI) defined under WGA Draft Specification 0.8 for the personal basic service set (PBSS) and infrastructure BSS to achieve further power savings and other advantages. Stations can be awake during a contention-based period (CBP) if it is in active state and can schedule frames during a service period (SP) to allow the assigned receiver to transmit to the assigned initiator. Stations in a group can schedule a group address frame to be sent during the CBP and group SP of a specific periodic BI. Stations in peer-to-peer connection may directly notify its peer stations of its power saving mode and wakeup schedule. Stations of an infrastructure basic service set (BSS) can also use the same power saving mechanism as stations of a PBSS noting a difference where each BI will be an access point's (AP's) awake BI.

Abstract translation: 本发明涉及用于个人基本服务组（PBSS）和基础设施BSS的WGA草案规范0.8中定义的信标间隔（BI）的各个周期的切换省电模式和重新调度通信帧，以实现进一步的功率节省和其他优点。 如果处于活动状态，站可以在基于争用的周期（CBP）期间唤醒，并且可以在服务周期（SP）期间调度帧以允许所分配的接收者向所分配的发起者发送。 组中的站可以安排在特定周期性BI的CBP和组SP期间发送的组地址帧。 点对点连接的站点可以直接通知其对等站其省电模式和唤醒时间表。 基础设施基础服务集（BSS）的站也可以使用与PBSS站相同的省电机制，注意到每个BI将是接入点（AP）的清醒BI。

公开(公告)号：US20160099696A1

公开(公告)日：2016-04-07

申请号：US14971359

申请日：2015-12-16

Applicant: STMicroelectronics, Inc.

Inventor： Davy Choi

IPC: H03G3/02 ,  H03F3/45

CPC classification number: H03G3/02 ,  H03F1/0205 ,  H03F1/26 ,  H03F3/3022 ,  H03F3/393 ,  H03F3/45 ,  H03F3/45094 ,  H03F3/45179 ,  H03F3/45475 ,  H03F2200/261 ,  H03F2203/45116 ,  H03F2203/45138 ,  H03F2203/45336 ,  H03G1/0035 ,  H03G1/02 ,  H03G3/3036 ,  H03M1/18

Abstract: An instrumentation amplifier includes first and second resistors for gain setting. The operational amplifiers within the instrumentation amplifier include selectively enabled current drive sources coupled to the amplifier output. The first and second resistors have variable resistances. A control circuit is configured to select the variable resistances of the first and second resistors to implement a fixed gain for the instrumentation amplifier and further selectively enable the current drive sources. The control circuit receives an indication of a downstream programmable gain (for example, from a downstream programmable gain amplifier). The variable resistances of the first and second resistors are selected to be scaled inversely with respect to the downstream programmable gain and the current drive sources are enabled proportionately with respect to the downstream programmable gain.

公开(公告)号：US09300952B2

公开(公告)日：2016-03-29

申请号：US14255357

申请日：2014-04-17

Applicant: STMicroelectronics, Inc.

Inventor： Greg Neal

IPC: H04N13/04

CPC classification number: H04N13/398 ,  H04N13/341 ,  H04N2213/008

Abstract: Methods and systems are described for enabling the operation of a stereoscopic viewing device such that the viewing device provides a movable viewing window that enables the 3D rendering of 3D image data displayed by a backlit LCD device. In a particular implementation, the systems and methods disclosed herein are operable to control the operation of a pair of LCD shutter glasses.

Abstract translation: 描述了用于使立体观看设备的操作的方法和系统，使得观看设备提供可启动由背光LCD设备显示的3D图像数据的3D渲染的可移动观看窗口。 在具体实施方案中，本文公开的系统和方法可操作以控制一对LCD快门眼镜的操作。

公开(公告)号：US09293474B2

公开(公告)日：2016-03-22

申请号：US14739736

申请日：2015-06-15

Applicant: International Business Machines Corporation ,  STMicroelectronics, Inc. ,  Commissariat A l'Energie atomique et aux Energies alternatives

Inventor： Kangguo Cheng ,  Bruce B. Doris ,  Ali Khakifirooz ,  Qing Liu ,  Laurent Grenouillet ,  Yannick Le Tiec ,  Maud Vinet

IPC: H01L27/12 ,  H01L21/762 ,  H01L21/84 ,  H01L29/06 ,  H01L29/16 ,  H01L29/161 ,  H01L21/02

CPC classification number: H01L27/1207 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/76224 ,  H01L21/76283 ,  H01L21/84 ,  H01L29/0649 ,  H01L29/1608 ,  H01L29/161

Abstract: Trenches are formed through a top semiconductor layer and a buried insulator layer of a semiconductor-on-insulator (SOI) substrate. A selective epitaxy is performed to form bulk semiconductor portions filling the trenches and in epitaxial alignment with the semiconductor material of a handle substrate. At least one dielectric layer is deposited over the top semiconductor layer and the bulk semiconductor portions, and is patterned to form openings over selected areas of the top semiconductor layer and the bulk semiconductor portions. A semiconductor alloy material is deposited within the openings directly on physically exposed surfaces of the top semiconductor layer and the bulk semiconductor portions. The semiconductor alloy material intermixes with the underlying semiconductor materials in a subsequent anneal. Within each of the SOI region and the bulk region, two types of semiconductor material portions are formed depending on whether a semiconductor material intermixes with the semiconductor alloy material.

公开(公告)号：US20160079128A1

公开(公告)日：2016-03-17

申请号：US14955801

申请日：2015-12-01

Applicant: STMICROELECTRONICS, INC. ,  COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： NICOLAS LOUBET ,  SYLVAIN MAITREJEAN ,  ROMAIN WACQUEZ

IPC: H01L21/84 ,  H01L21/266 ,  H01L21/306 ,  H01L21/02 ,  H01L21/762 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/165 ,  H01L21/265 ,  H01L21/324

CPC classification number: H01L21/845 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/26506 ,  H01L21/266 ,  H01L21/306 ,  H01L21/30604 ,  H01L21/324 ,  H01L21/76224 ,  H01L21/76283 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0922 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/0649 ,  H01L29/1054 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/7847 ,  H01L29/7848 ,  H01L29/7849

Abstract: Methods and structures for forming localized, differently-strained regions in a semiconductor layer on a substrate are described. An initial, unstrained, semiconductor-on-insulator substrate may be processed to form the differently-strained regions in the original semiconductor layer. The differently-strained regions may have opposite types of strain. The strains in the different regions may be formed independently.

公开(公告)号：US20160067970A1

公开(公告)日：2016-03-10

申请号：US14941898

申请日：2015-11-16

Applicant: STMICROELECTRONICS, INC.

Inventor： KENNETH J. STEWART

IPC: B41J2/16

CPC classification number: B41J2/1632 ,  B28D5/022 ,  B28D5/027 ,  B41J2/14112 ,  B41J2/14129 ,  B41J2/145 ,  B41J2/1601 ,  B41J2/1603 ,  B41J2/162 ,  B41J2/1635 ,  B41J2002/14491 ,  H01L21/78 ,  Y10T29/42 ,  Y10T29/49083 ,  Y10T29/49401 ,  Y10T29/49798

Abstract: A method of making an inkjet print head may include forming, by sawing with a rotary saw blade, first discontinuous slotted recesses in a first surface of a wafer. The first discontinuous slotted recesses may be arranged in parallel, spaced apart relation. The method may further include forming, by sawing with the rotary saw blade, second discontinuous slotted recesses in a second surface of the wafer aligned and coupled in communication with the first continuous slotted recesses to define through-wafer channels. In another embodiment, the first and second plurality of discontinuous recesses may be formed by respective first and second rotary saw blades.

Abstract translation: 制造喷墨打印头的方法可以包括通过用旋转锯片锯切在晶片的第一表面中形成第一不连续的开槽凹槽。 第一不连续的开槽凹槽可以以平行的，间隔的关系布置。 该方法可以进一步包括通过与旋转锯片锯切形成在晶片的第二表面中的第二不连续开槽的凹槽，其与第一连续开槽的凹槽对准并耦合以限定贯穿晶片通道。 在另一个实施例中，第一和第二多个不连续凹槽可以由相应的第一和第二旋转锯片形成。

公开(公告)号：US09263343B2

公开(公告)日：2016-02-16

申请号：US14327343

申请日：2014-07-09

Applicant: STMicroelectronics, Inc. ,  International Business Machines Corporation

Inventor： Nicolas Loubet ,  Balasubramanian Pranatharthiharan

IPC: H01L21/8238 ,  H01L29/161 ,  H01L27/092 ,  H01L21/02 ,  H01L21/265 ,  H01L21/266 ,  H01L21/3065 ,  H01L21/308 ,  H01L29/66

CPC classification number: H01L21/823814 ,  H01L21/02532 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/823878 ,  H01L27/092 ,  H01L29/161 ,  H01L29/6656

Abstract: Silicon germanium regions are formed adjacent gates electrodes over both n-type and p-type regions in an integrated circuit. A hard mask patterned by lithography then protects structures over the p-type region while the silicon germanium is selectively removed from over the n-type region, even under remnants of the hard mask on sidewall spacers on the gate electrode. Silicon germanium carbon is epitaxially grown adjacent the gate electrode in place of the removed silicon germanium, and source/drain extension implants are performed prior to removal of the remaining hard mask over the p-type region structures.

Abstract translation: 在集成电路中，在n型和p型区域上形成邻近栅电极的硅锗区。 通过光刻图案化的硬掩模即使在栅电极上的侧壁间隔物上的硬掩模的残留物上，也可以在p型区域上保护结构，同时从n型区域上选择性地除去硅锗。 锗栅极外延生长硅代替去除的硅锗，并且在去除p型区域结构之前的剩余硬掩模之前进行源极/漏极延伸植入。

公开(公告)号：US09257450B2

公开(公告)日：2016-02-09

申请号：US14182632

申请日：2014-02-18

Applicant: STMICROELECTRONICS, INC. ,  INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Nicolas Loubet ,  James Kuss

IPC: H01L29/16 ,  H01L27/12 ,  H01L21/84 ,  H01L29/165 ,  H01L29/06 ,  H01L21/02

CPC classification number: H01L27/1211 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/02639 ,  H01L21/02664 ,  H01L21/84 ,  H01L21/845 ,  H01L27/1203 ,  H01L29/0673 ,  H01L29/16 ,  H01L29/165 ,  H01L29/66439 ,  H01L29/78696

Abstract: A method for making a semiconductor device may include forming, above a substrate, a stack of alternating layers of first and second semiconductor materials. The second semiconductor material may be different than the first semiconductor material. The method may further include forming fins from the stack, with each fin having alternating layers of the first and second semiconductor materials, and selectively removing sidewall portions of the second semiconductor material from the fins to define recesses therein. The method may also include forming a dielectric material within the recesses, forming additional first semiconductor material on sidewall portions of the first semiconductor material in the fins, and forming a dielectric layer overlying the fins to define nanowires including the first semiconductor material within the dielectric layer.

Abstract translation: 制造半导体器件的方法可以包括在衬底之上形成第一和第二半导体材料的交替层叠。 第二半导体材料可以不同于第一半导体材料。 该方法还可以包括从堆叠形成翅片，其中每个翅片具有第一和第二半导体材料的交替层，并且从翅片选择性地去除第二半导体材料的侧壁部分以在其中限定凹部。 该方法还可以包括在凹槽内形成介电材料，在鳍片中的第一半导体材料的侧壁部分上形成附加的第一半导体材料，以及形成覆盖鳍片的介电层，以限定纳米线，该纳米线包括介电层内的第一半导体材料 。