Compliant surface layer for flip-chip electronic packages and method for forming same
    51.
    发明授权
    Compliant surface layer for flip-chip electronic packages and method for forming same 失效
    适用于倒装芯片电子封装的表面层及其形成方法

    公开(公告)号:US06191952B1

    公开(公告)日:2001-02-20

    申请号:US09067708

    申请日:1998-04-28

    IPC分类号: H05K118

    摘要: Flip-chip electronic packages are provided with a compliant surface layer, normally positioned between an underfill layer and a substrate such as a chip carrier or a printed circuit board or card, which reduces stress and strain resulting from differences in coefficients of thermal expansion between the chip and substrate. The compliant layer, which should have a storage modulus of less than ½ the modulus of the substrate, preferably between about 50,000 psi and about 20,000 psi, may comprise rubbery materials such as silicone, virco-plastic polymers such as polytetrafluoroethylene or interpenetrating polymer networks (IPNs). Photosensitive IPNs used for solder marks are preferred.

    摘要翻译: 倒装芯片电子封装设置有通常位于底部填充层和诸如芯片载体或印刷电路板或卡之类的基板之间的顺应性表面层,其减少了由于两者之间的热膨胀系数差异导致的应力和应变 芯片和基板。 应该具有小于衬底模量的1/2的柔性层,优选在约50,000psi和约20,000psi之间的弹性层可以包括橡胶状材料,例如硅树脂,诸如聚四氟乙烯的环氧塑料聚合物或互穿聚合物网络( IPN)。 用于焊锡标记的光敏IPN是优选的。

    Method for producing gate overlapped lightly doped drain (GOLDD)
structure for submicron transistor
    56.
    发明授权
    Method for producing gate overlapped lightly doped drain (GOLDD) structure for submicron transistor 失效
    用于生成栅极叠加的轻型漏极(金)结构的子晶体管的方法

    公开(公告)号:US5227320A

    公开(公告)日:1993-07-13

    申请号:US757412

    申请日:1991-09-10

    IPC分类号: H01L21/336 H01L29/78

    CPC分类号: H01L29/6659 H01L29/7836

    摘要: A method produces a transistor with an overlapping gate. A first gate region is placed on a substrate between two source/drain regions. The first gate region includes a polysilicon region on top of a dielectric region. Gate overlap regions are placed around the polysilicon region. The gate overlap regions extend out over the two source/drain regions. The gate overlap regions are formed of a metal-silicide layer, for example Titanium-silicide. A top portion of the metal-silicide layer is oxidized to form a silicon dioxide layer on top of the metal-silicide layer. At the time of oxidation, the metal-silicide layer is also annealed to which further helps to improves the Titanium-silicide stoichiometry.

    摘要翻译: 一种方法产生具有重叠栅极的晶体管。 第一栅极区域放置在两个源极/漏极区域之间的衬底上。 第一栅极区域包括位于电介质区域顶部的多晶硅区域。 栅极重叠区域放置在多晶硅区域周围。 栅极重叠区域在两个源极/漏极区域上延伸出来。 栅极重叠区域由金属硅化物层形成,例如硅化钛。 金属硅化物层的顶部被氧化以在金属硅化物层的顶部上形成二氧化硅层。 在氧化时,金属硅化物层也被退火,这进一步有助于改善硅化钛化学计量。

    Process for preparing a melon extract and concentrate and product produced by the process
    60.
    发明授权
    Process for preparing a melon extract and concentrate and product produced by the process 有权
    制备瓜子提取物和浓缩物的方法以及通过该方法生产的产品

    公开(公告)号:US08084075B1

    公开(公告)日:2011-12-27

    申请号:US11469220

    申请日:2006-08-31

    IPC分类号: A23L2/02

    摘要: The process of producing a melon extract by the following steps: providing at least one whole melon comprising flesh; steaming the outside surface of the whole melon to thereby soften the outside surface of the melon and remove microbials from the outside surface of the melon; reducing the size of the whole melon to form melon pieces; and introducing the melon pieces into the first finisher and utilizing the finisher to remove the melon flesh from the melon pieces such that at least from about 1/16 inch of flesh remains on the melon pieces and form melon extract from the flesh that is removed from the melon pieces.

    摘要翻译: 通过以下步骤生产甜瓜提取物的过程:提供至少一个包含肉的整个瓜; 蒸煮整个甜瓜的外表面,从而软化甜瓜的外表面并从甜瓜的外表面除去微生物; 减少整个瓜子的大小形成瓜片; 并将甜瓜片引入第一整理器并利用整理器从甜瓜片中去除瓜子,使得至少约1/16英寸的肉保留在瓜片上,并从从肉中除去的肉中形成瓜提取物 瓜片。