公开(公告)号：US20050277302A1

公开(公告)日：2005-12-15

申请号：US11139436

申请日：2005-05-27

Applicant: Son Nguyen ,  Hichem M'Saad ,  Bok Kim

Inventor： Son Nguyen ,  Hichem M'Saad ,  Bok Kim

IPC: C23C16/32 ,  C23C16/505 ,  C23C16/56 ,  H01L21/312 ,  H01L21/469 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L21/02126 ,  C23C16/325 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02304 ,  H01L21/3121 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods are provided for depositing a doped barrier layer material having a low dielectric constant. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate by introducing a processing gas comprising an organosilicon compound, at least one dopant containing gas, hydrogen gas, and, optionally, an inert gas into a processing chamber, reacting the processing gas to deposit the barrier layer, and depositing a first dielectric layer adjacent the barrier layer. The organosilicon compound may comprise a phenylsilane containing compound or an aliphatic organosilicon compound. The processing gas may further comprise an oxygen containing compound, a nitrogen containing compound, or both.

Abstract translation: 提供了用于沉积具有低介电常数的掺杂阻挡层材料的方法。 一方面，本发明提供了一种处理衬底的方法，包括通过将包含有机硅化合物，至少一种含有气体的掺杂剂，氢气和任选的惰性气体的处理气体引入到衬底上来沉积阻挡层， 处理室，使处理气体反应以沉积阻挡层，以及沉积与阻挡层相邻的第一介电层。 有机硅化合物可以包含含苯基硅烷的化合物或脂族有机硅化合物。 处理气体还可以包含含氧化合物，含氮化合物或两者。

公开(公告)号：US20050250348A1

公开(公告)日：2005-11-10

申请号：US10840754

申请日：2004-05-06

Applicant: Li-Qun Xia ,  Huiwen Xu ,  Derek Witty ,  Hichem M'Saad ,  Dustin Ho ,  Juan Rocha-Alvarez

Inventor： Li-Qun Xia ,  Huiwen Xu ,  Derek Witty ,  Hichem M'Saad ,  Dustin Ho ,  Juan Rocha-Alvarez

IPC: C23C16/40 ,  H01L21/31 ,  H01L21/316 ,  H01L21/469 ,  H01L21/4763 ,  H01L21/768

CPC classification number: H01L21/76826 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76829

Abstract: A method of processing a substrate including depositing a low dielectric constant film comprising silicon, carbon, and oxygen on the substrate and depositing an oxide rich cap on the low dielectric constant film is provided. The low dielectric constant film is deposited from a gas mixture comprising an organosilicon compound and an oxidizing gas in the presence of RF power in a chamber. The RF power and a flow of the organosilicon compound and the oxidizing gas are continued in the chamber after the deposition of the low dielectric constant film at flow rates sufficient to deposit an oxide rich cap on the low dielectric constant film.

Abstract translation: 提供一种处理衬底的方法，包括在衬底上沉积包含硅，碳和氧的低介电常数膜并在低介电常数膜上沉积氧化物富盖。 在室内存在RF功率的情况下，从包含有机硅化合物和氧化气体的气体混合物中沉积低介电常数膜。 在低介电常数薄膜以低于在低介电常数膜上沉积富含氧化物的盖子的流速下沉积后，室内继续进行RF功率和有机硅化合物和氧化气体的流动。

公开(公告)号：US20050227499A1

公开(公告)日：2005-10-13

申请号：US10816606

申请日：2004-04-02

Applicant: Sohyun Park ,  Wen Zhu ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Hichem M'Saad

Inventor： Sohyun Park ,  Wen Zhu ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Hichem M'Saad

IPC: C23C16/44 ,  H01L21/316 ,  H01L21/469 ,  H01L21/768

CPC classification number: H01L21/02126 ,  C23C16/4404 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31633 ,  H01L21/76829 ,  Y10S438/913

Abstract: A method for seasoning a chamber and depositing a low dielectric constant layer on a substrate in the chamber is provided. In one aspect, the method includes seasoning the chamber with a first mixture comprising one or more organosilicon compounds and one or more oxidizing gases and depositing a low dielectric constant layer on a substrate in the chamber from a second mixture comprising one or more organosilicon compounds and one or more oxidizing gases, wherein a ratio of the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the first mixture is lower than the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the second mixture.

Abstract translation: 提供了调节室的方法和在室中的基板上沉积低介电常数层。 在一个方面，所述方法包括用包含一种或多种有机硅化合物和一种或多种氧化性气体的第一混合物来调节室，并且从室内的衬底上沉积低介电常数层，所述第二混合物包含一种或多种有机硅化合物和 一种或多种氧化性气体，其中有机硅化合物的总流量与第一混合物中的氧化气体的总流量的比率低于有机硅化合物的总流量与氧化物的总流量的比率 第二混合物中的气体。

公开(公告)号：US06927178B2

公开(公告)日：2005-08-09

申请号：US10732904

申请日：2003-12-10

Applicant: Bok Hoen Kim ,  Sudha Rathi ,  Sang H. Ahn ,  Christopher D. Bencher ,  Yuxiang May Wang ,  Hichem M'Saad ,  Mario D. Silvetti ,  Miguel Fung ,  Keebum Jung ,  Lei Zhu

Inventor： Bok Hoen Kim ,  Sudha Rathi ,  Sang H. Ahn ,  Christopher D. Bencher ,  Yuxiang May Wang ,  Hichem M'Saad ,  Mario D. Silvetti ,  Miguel Fung ,  Keebum Jung ,  Lei Zhu

IPC: C23C16/40 ,  H01L21/027 ,  H01L21/311 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L21/31 ,  H01L21/469

CPC classification number: H01L21/76828 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/314 ,  H01L21/31633 ,  H01L21/7681 ,  H01L21/76826 ,  Y10S438/952

Abstract: Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an oxygen and carbon containing compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen. In another aspect, the dielectric material forms one or both layers in a dual layer anti-reflective coating.

Abstract translation: 提供了沉积电介质材料的方法。 电介质材料可用于抗反射涂层或硬掩模。 一方面，提供了一种处理基板的方法，包括将包含硅烷类化合物和含氧和碳的化合物的处理气体引入处理室，并使处理气体在基板上沉积无氮介电材料 。 介电材料包括硅和氧。 在另一方面，电介质材料在双层抗反射涂层中形成一层或两层。

公开(公告)号：US06521546B1

公开(公告)日：2003-02-18

申请号：US09593851

申请日：2000-06-14

Applicant: Michael Barnes ,  Hichem M'Saad ,  Huong Thanh Nguyen ,  Farhad Moghadam

Inventor： Michael Barnes ,  Hichem M'Saad ,  Huong Thanh Nguyen ,  Farhad Moghadam

IPC: H01L2131

CPC classification number: H01L21/02131 ,  C23C16/30 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3127 ,  H01L21/31629

Abstract: A method of forming an integrated circuit using a fluoro-organosilicate layer is disclosed. The fluoro-organosilicate layer is formed by applying an electric field to a gas mixture comprising a fluoro-organosilane compound and an oxidizing gas. The fluoro-organosilicate layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the fluoro-organosilicate layer is used as a hardmask. In another integrated circuit fabrication process, the fluoro-organosilicate layer is incorporated into a damascene structure.

Abstract translation: 公开了一种使用氟 - 有机硅酸盐层形成集成电路的方法。 通过向包含氟 - 有机硅烷化合物和氧化气体的气体混合物施加电场而形成氟 - 有机硅酸盐层。 氟 - 有机硅酸盐层与集成电路制造工艺兼容。 在一个集成电路制造工艺中，氟 - 有机硅酸盐层用作硬掩模。 在另一集成电路制造工艺中，氟 - 有机硅酸盐层被结合到镶嵌结构中。

公开(公告)号：US6121161A

公开(公告)日：2000-09-19

申请号：US233366

申请日：1999-01-19

Applicant: Kent Rossman ,  Turgut Sahin ,  Hichem M'Saad ,  Romuald Nowak

Inventor： Kent Rossman ,  Turgut Sahin ,  Hichem M'Saad ,  Romuald Nowak

IPC: C23C14/56 ,  C23C16/44 ,  C23C16/50 ,  H01L21/205 ,  H01L21/31

CPC classification number: C23C16/4401 ,  C23C14/564 ,  C23C16/4404

Abstract: A method and apparatus for controlling the introduction of contaminates into a deposition chamber that occur naturally within the chamber components. The CVD chamber is "seasoned" with a protective layer after a dry clean operation and before a substrate is introduced into the chamber. The deposited seasoning layer has a lower diffusion rate for typical contaminants in relation to the chamber component materials and covers the chamber component, reducing the likelihood that the naturally occurring contaminants will interfere with subsequent processing steps. After deposition of the seasoning layer is complete, the chamber is used for one to n substrate deposition steps before being cleaned by another clean operation as described above and then reseasoned.

Abstract translation: 一种用于控制污染物引入到腔室部件内自然发生的沉积室的方法和装置。 在干燥清洁操作之后并且在将基板引入室之前，CVD室被保护层“经过调节”。 沉积的调味剂层对于典型的污染物相对于室组分材料具有较低的扩散速率并且覆盖室组分，降低了天然存在的污染物将干扰后续处理步骤的可能性。 在调味层的沉积完成之后，将该室用于一至n个衬底沉积步骤，然后通过如上所述的另一个清洁操作进行清洁，然后再次进行处理。

公开(公告)号：US20160145742A1

公开(公告)日：2016-05-26

申请号：US14552273

申请日：2014-11-24

Applicant: Karthik Janakiraman ,  Thomas NOWAK ,  Juan Carlos ROCHA-ALVAREZ ,  Mark FODOR ,  Dale R. DU BOIS ,  Amit Kumar BANSAL ,  Mohamad A. AYOUB ,  Eller Y. JUCO ,  Visweswaren SIVARAMAKRISHNAN ,  Hichem M'SAAD

Inventor： Karthik Janakiraman ,  Thomas NOWAK ,  Juan Carlos ROCHA-ALVAREZ ,  Mark FODOR ,  Dale R. DU BOIS ,  Amit Kumar BANSAL ,  Mohamad A. AYOUB ,  Eller Y. JUCO ,  Visweswaren SIVARAMAKRISHNAN ,  Hichem M'SAAD

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/503 ,  C23C16/505 ,  C23C16/458 ,  C23C16/44

Abstract: An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.

公开(公告)号：US20120204795A1

公开(公告)日：2012-08-16

申请号：US13456447

申请日：2012-04-26

Applicant: Deenesh Padhi ,  Chiu Chan ,  Sudha Rathi ,  Ganesh Balasubramanian ,  Jianhua Zhou ,  Karthik Janakiraman ,  Martin J. Seamons ,  Visweswaren Sivaramakrishnan ,  Derek R. Witty ,  Hichem M'Saad

Inventor： Deenesh Padhi ,  Chiu Chan ,  Sudha Rathi ,  Ganesh Balasubramanian ,  Jianhua Zhou ,  Karthik Janakiraman ,  Martin J. Seamons ,  Visweswaren Sivaramakrishnan ,  Derek R. Witty ,  Hichem M'Saad

IPC: C23C16/50

CPC classification number: C23C16/45565 ,  C23C16/0254 ,  C23C16/26 ,  C23C16/4404

Abstract: An article having a protective coating for use in semiconductor applications and methods for making the same are provided. In certain embodiments, a method of coating an aluminum surface of an article utilized in a semiconductor processing chamber is provided. The method comprises providing a processing chamber; placing the article into the processing chamber; flowing a first gas comprising a carbon source into the processing chamber; flowing a second gas comprising a nitrogen source into the processing chamber; forming a plasma in the chamber; and depositing a coating material on the aluminum surface. In certain embodiments, the coating material comprises an amorphous carbon nitrogen containing layer. In certain embodiments, the article comprises a showerhead configured to deliver a gas to the processing chamber.

Abstract translation: 提供了具有用于半导体应用的保护涂层的制品及其制造方法。 在某些实施例中，提供了在半导体处理室中使用的制品的铝表面的涂覆方法。 该方法包括提供处理室; 将物品放入处理室; 将包含碳源的第一气体流入所述处理室; 将包含氮源的第二气体流入所述处理室; 在室内形成等离子体; 以及在铝表面上沉积涂层材料。 在某些实施方案中，涂层材料包含无定形含碳氮层。 在某些实施例中，制品包括构造成将气体输送到处理室的喷头。

公开(公告)号：US20120196450A1

公开(公告)日：2012-08-02

申请号：US13365226

申请日：2012-02-02

Applicant: Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

Inventor： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

IPC: H01L21/3105 ,  H01L21/318 ,  H01L21/316

CPC classification number: H01L21/0234 ,  C23C16/345 ,  C23C16/56 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/3185 ,  H01L21/823807 ,  H01L29/66583 ,  H01L29/7843

Abstract: Stress of a silicon nitride layer may be enhanced by deposition at higher temperatures. Employing an apparatus that allows heating of a substrate to substantially greater than 400° C. (for example a heater made from ceramic rather than aluminum), the silicon nitride film as-deposited may exhibit enhanced stress allowing for improved performance of the underlying MOS transistor device. In accordance with some embodiments, a deposited silicon nitride film is exposed to curing with plasma and ultraviolet (UV) radiation, thereby helping remove hydrogen from the film and increasing film stress. In accordance with other embodiments, a silicon nitride film is formed utilizing an integrated process employing a number of deposition/curing cycles to preserve integrity of the film at the sharp corner of the underlying raised feature. Adhesion between successive layers may be promoted by inclusion of a post-UV cure plasma treatment in each cycle.

Abstract translation: 氮化硅层的应力可以通过在较高温度下沉积来增强。 使用允许将衬底加热到​​基本上大于400℃的装置（例如由陶瓷而不是铝制成的加热器），沉积的氮化硅膜可能表现出增强的应力，从而可以改善下面的MOS晶体管的性能 设备。 根据一些实施例，沉积的氮化硅膜暴露于等离子体和紫外（UV）辐射的固化，从而有助于从膜中除去氢并增加膜应力。 根据其他实施例，使用采用多个沉积/固化循环的整合方法形成氮化硅膜，以在底层凸起特征的尖角处保留膜的完整性。 可以通过在每个循环中包括UV后固化等离子体处理来促进连续层之间的粘附。

公开(公告)号：US08129290B2

公开(公告)日：2012-03-06

申请号：US11400275

申请日：2006-04-07

Applicant: Mihaela Balseanu ,  Michael S. Cox ,  Li-Qun Xia ,  Mei-Yee Shek ,  Jia Lee ,  Vladimir Zubkov ,  Tzu-Fang Huang ,  Rongping Wang ,  Isabelita Roflox ,  Hichem M'Saad

Inventor： Mihaela Balseanu ,  Michael S. Cox ,  Li-Qun Xia ,  Mei-Yee Shek ,  Jia Lee ,  Vladimir Zubkov ,  Tzu-Fang Huang ,  Rongping Wang ,  Isabelita Roflox ,  Hichem M'Saad

IPC: H01L21/31 ,  H01L21/469

CPC classification number: C23C16/345 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/3141 ,  H01L21/3185 ,  H01L21/823412 ,  H01L21/82345 ,  H01L21/823807 ,  H01L21/823835

Abstract: High tensile stress in a deposited layer such as silicon nitride, may be achieved utilizing one or more techniques, employed alone or in combination. High tensile stress may be achieved by forming a silicon-containing layer on a surface by exposing the surface to a silicon-containing precursor gas in the absence of a plasma, forming silicon nitride by exposing said silicon-containing layer to a nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride created thereby. High tensile stress may also be achieved by exposing a surface to a silicon-containing precursor gas in a first nitrogen-containing plasma, treating the material with a second nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride formed thereby. In another embodiment, tensile film stress is enhanced by deposition with porogens that are liberated upon subsequent exposure to UV radiation or plasma treatment.

Abstract translation: 沉积层如氮化硅中的高拉伸应力可以利用单独使用或组合使用的一种或多种技术来实现。 可以通过在不存在等离子体的情况下将表面暴露于含硅前体气体而在表面上形成含硅层来形成高拉伸应力，通过将含硅层暴露于含氮等离子体而形成氮化硅 ，然后重复这些步骤以增加由此产生的氮化硅的厚度。 也可以通过在第一含氮等离子体中将表面暴露于含硅前体气体，用第二含氮等离子体处理该材料，然后重复这些步骤以增加氮化硅的厚度来实现高拉伸应力 由此形成。 在另一个实施方案中，拉伸膜应力通过在随后暴露于UV辐射或等离子体处理时释放的孔原子沉积而增强。